MARKING JS sot-23
Abstract: BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS21LT1G
Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE
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BAS19LT1,
BAS20LT1,
BAS21LT1,
BAS21DW5T1
BAS19LT1
BAS20LT1
BAS21LT1
OT-23
SC-88A
MARKING JS sot-23
BAS19
BAS19LT1
BAS19LT3
BAS20
BAS20LT1
BAS21
BAS21DW5T1
BAS21LT1
BAS21LT1G
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diode MARKING CODE jx
Abstract: sot23 marking JR marking mh sot-23 BAS21LT1G sot-23 MARKING CODE JS 88a diode SOT-23 code marking mf
Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE
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BAS19LT1,
BAS20LT1,
BAS21LT1,
BAS21DW5T1
BAS19LT1
BAS20LT1
BAS21LT1
OT-23
SC-88A
diode MARKING CODE jx
sot23 marking JR
marking mh sot-23
BAS21LT1G
sot-23 MARKING CODE JS
88a diode
SOT-23 code marking mf
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Js MARKING CODE SOT23
Abstract: No abstract text available
Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE
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BAS19LT1,
BAS20LT1,
BAS21LT1,
BAS21DW5T1
BAS19LT1
BAS20LT1
BAS21LT1
OT-23
SC-88A
Js MARKING CODE SOT23
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JS SOT23-3
Abstract: sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23
Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT-23 3 CATHODE 1 ANODE SC-88A
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BAS19LT1,
BAS20LT1,
BAS21LT1,
BAS21DW5T1
BAS19LT1
BAS20LT1
BAS21LT1
OT-23
SC-88A
JS SOT23-3
sot23 marking JR
BAS20LT1
BAS21
BAS21DW5T1
BAS21LT1
BAS19
BAS19LT1
BAS20
MARKING JS sot-23
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BAS19LT1G
Abstract: Diode SOT-23 marking Js marking 88A MF sot-23 BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 sot-23 MARKING CODE JS
Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features • Pb−Free Packages are Available
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BAS19LT1,
BAS20LT1,
BAS21LT1,
BAS21DW5T1
BAS19LT1
BAS20LT1
BAS21LT1
OT-23
BAS19
BAS19LT1G
Diode SOT-23 marking Js
marking 88A
MF sot-23
BAS19
BAS19LT1
BAS19LT3
BAS20
BAS20LT1
sot-23 MARKING CODE JS
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Untitled
Abstract: No abstract text available
Text: BAW56WT1 Preferred Device Dual Switching Diode Features • Pb−Free Package is Available http://onsemi.com MARKING DIAGRAM MAXIMUM RATINGS TA = 25°C Rating 3 Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current
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BAW56WT1
SC-70
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Untitled
Abstract: No abstract text available
Text: BAW56WT1 Preferred Device Dual Switching Diode Features • Pb−Free Package is Available http://onsemi.com MARKING DIAGRAM MAXIMUM RATINGS TA = 25°C Rating 3 Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current
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BAW56WT1
SC-70
BAW56WT1/D
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Untitled
Abstract: No abstract text available
Text: MC74VHC1G66 SPST NO Normally Open Analog Switch MARKING DIAGRAMS 5 SC−88A DF SUFFIX CASE 419A High Speed: tPD = 20 ns (Typ) at VCC = 5.0 V 5 5 1 Low Power Dissipation: ICC = 1.0 mA (Max) at TA = 25°C V9 M G Diode Protection Provided on Inputs and Outputs
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MC74VHC1G66
MC74VHC4066
MC14066.
MC74VHC1G66/D
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a7s diode
Abstract: bav99w diode marking 355
Text: SIEMENS BAV 99W Silicon Switching Diode Array • Connected in series • For high speed switching applications TT Type Marking Ordering Code BAV 99W A7s IF Pin Configuration Q62702-A1051 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings per Diode Parameter
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Q62702-A1051
OT-323
40mmm
a7s diode
bav99w
diode marking 355
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE o. sa / bov EP05Q06 FEATURES OJEDEC SOD-123 Package oV ery Low profile 1.1mm Max o High Surge Capability oL ow Thermal Resistance OUL 94, VO o Packaged in 8mm tape Device Marking ^ ^ ^ Month of Mfg. A = Jan. B = Feb.-L = Dec. Year of Mfg. 7 = 1997
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EP05Q06
OD-123
EP05Q06
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Untitled
Abstract: No abstract text available
Text: ERC04 F (1.5A) Outline Drawings GENERAL USE RECTIFIER DIODE ) Features • Compact size, light weight • S U f fiii I ^ tk : Marking High reliability ! Applications Abridged type name General purpose rectifier applications V? | ° l• B E ? 7* Voltage class
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ERC04
eaTe30
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erc06
Abstract: A537 A536
Text: ERC06H sa • « * » • * » : Outline Drawings FAST RECO VERY DIODE ■ 4$^ : Features : Marking Most suitable for color T.V. damper < 7- 3 —K : S : Blue High voltage by mesa design. Color code High reliability Abridged type name : Applications <T3 - C">
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ERC06H
I95t/R89)
erc06
A537
A536
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE o .s a / io o v EP 0 5 H 10 FEATURES OJEDEC SOD-123 Package o V ery Low profile 1.1mm Max o High Surge Capability o Low Thermal Resistance OUL 94, VO o Packaged in 8mm tape Device Marking ^ ^ _ Month of Mfg. A = Jan. B = Feb.-L =D ec.
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OD-123
EP05H
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TRA1
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE EP05Q04 0.s a /40 v FEA TU RES OJEDEC SOD-123 Package oV ery Low profile 1.1mm Max o High Surge Capability o Low Thermal Resistance OUL 94, VO O Packaged in 8mm tape Device Marking ~ ~ _Month of Mfg. A=Jan. B = Feb.—L=Dec. Year of Mfg. 7=1997
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EP05Q04
OD-123
bblS123
TRA1
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE EP 0 5 H 10 o .s a / io o v FEA TU RES OJEDEC SOD-123 Package oV ery Low profile 1.1mm Max o High Surge Capability O Low Thermal Resistance OUL 94, VO o Packaged in 8mm tape Device Marking H 7A Month of Mfg. A=Jan. ’ B = Feb.—L=Dec.
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OD-123
EP05H10
118TC
EP05H
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 0.5A/30V EP05Q03L FEATURES OJEDEC SOD-123 Package OVery Low profile 1.1mm Max o High Surge Capability o Low Thermal Resistance OUL 94, VO o Packaged in 8mm tape Device Marking ^ ^ ^ M onth of Mfg. A = Jan . B = F e b .-L = D e c . Y e a r of Mfg. 7=1997
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A/30V
EP05Q03L
OD-123
EP05Q03L
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A-534
Abstract: ERB06
Text: ERB06HA : Outline Drawings FAST RECOVERY DIODE Mft-Bk • Features • t ) ? — TV £* |fg?jv : Marking M ost suitable fo r c o lo r T .V . dam per • w r tm z V M E .ir 'fa ' * 7 - 3 - K: ft High voltage by mesa design. Color code : Blue • B it CD High reliability
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ERB060A)
ERB06
A-534
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B6U 80/100
Abstract: MARK UU1 ERC35 Marking code jSs marking code aj
Text: ERC35 2 .5A g ± 'J : Outline Drawings FAST RECOVERY DIODE * Features ‘ Marking S oft recovery, low noise A ? - 3 - V :» H igh reliability Color code : Silver Abridged type name : Applications %E9 5* AV-K-?-? Voltage class H igh speed sw itch in g . a -j Uto
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ERC35
B6U 80/100
MARK UU1
Marking code jSs
marking code aj
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T930
Abstract: diode code yw marking code YW DIODE T460 ERC13 T151 Shl50
Text: ERC13 1 .2A — K : Outl i ne Drawings GENERAL USE RECTIFIER DIODE •*(#•§ : Features • High surge current • 'Jv5 2 ,liM • A fflS H i Compact size, lightweight M it T F I Marking High reliability * 9 - 3 - H :# Color code: Blue \ General purpose rectifier applications
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ERC13
I95t/R89)
Shl50
T930
diode code yw
marking code YW DIODE
T460
T151
Shl50
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ERB44
Abstract: ERB44-08 T151 T930
Text: ERB44 ia I < s a a ia t ^ ^ - K : Outline Drawings FAST RECOVERY DIODE : Features :7jv : Marking High voltage by mesa design • f t flMRtt # 7- 3- K:» High reliability C olor code : Green • E J ii I Applications Abridged type name 7* Voltage class High speed sw itch in g .
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ERB44
30tf3^
I95t/R89)
ERB44-08
T151
T930
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Untitled
Abstract: No abstract text available
Text: E R C 1 2 i . 2 A I Outline Drawings - M t M m m ? * * - k _ GEN ERAL USE R EC TIFIER DIODE -w¿3 5. — 28MIN — /Q8 20MIN — : Features • •0— Hi gh surge current • 'J V£ M $ A • ffifflfitt ■ S/jv i Marking Compact size, lightweight
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28MIN
20MIN
I95t/R89)
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h51 diode
Abstract: No abstract text available
Text: ERB44 ia  jÈ S S S f t ^ V i—K • W fé '+ fè : Outline Drawings FAST RECOVERY DIODE ■ ¡E H I : Features :7jv : Marking High voltage by mesa design. • ftflM R tt # 7 - 3 - K: m High reliability Color code : Green ■ E J ii : Applications Abridged type name
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ERB44(
10msS
Tg30S
I95t/R89)
h51 diode
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TI43A
Abstract: No abstract text available
Text: ERC30 i .5A : Outline Drawings FAST RECOVERY DIODE A I Features • y * > 2 'X f c :- K a i # # c a t ' W ^ S uper high speed sw itchin g. tjz : Marking • te V F Ä 5-P-K: £ Color code : Orange Low Vp IS S JB S Abridged type name High reliability o •
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ERC30
1995-9095t/R89
TI43A
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marking AFW
Abstract: SMD DIODE BOOK diode T3 Marking 20NC15 DF20NC15 smd marking 5G J532 smd diode marking 47
Text: Schottky Barrier Diode Twin Diode Mfm OUTLINE Package : STO-220 DF20NC15 Unit-m m Weight 1.5g Typ P y K L l°-(ffl) 10.2 15 0 V 2 0 A Feature • SM D ' SM D • <SlR=0.4mA 1Low lR=0.4mA 1Resistance for thermal run-away < IA Main Use >X ' f ' y 1Sw itching Regulator
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DF20NC15
STO-220
i50Hz
marking AFW
SMD DIODE BOOK
diode T3 Marking
20NC15
DF20NC15
smd marking 5G
J532
smd diode marking 47
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