bar74
Abstract: oscillograph
Text: BAR74 Silicon Switching Diode 3 For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking BAR74 JBs Pin Configuration 1=A 2 = n.c. Package 3=C SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage VRM
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BAR74
VPS05161
EHA07002
EHB00013
EHB00014
Jul-27-2001
EHB00015
bar74
oscillograph
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tr bar
Abstract: BAR74
Text: BAR 74 Silicon Switching Diode 3 • For high-speed switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking BAR 74 JBs Pin Configuration 1=A 2 = n.c. Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage
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VPS05161
EHA07002
OT-23
EHB00013
EHB00014
Oct-05-1999
EHB00015
tr bar
BAR74
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BAL74
Abstract: MARKING SOT23 jbs BAR74 SOT23 BAL74 BCW66
Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications BAL74 BAR74 ! ! Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol
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BAL74/BAR74.
BAL74
BAR74
BAL74,
BAL74
MARKING SOT23 jbs
BAR74
SOT23 BAL74
BCW66
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MARKING SOT23 jbs
Abstract: BAR74 diode marking 74 Q62702-F704
Text: Silicon Switching Diode ● BAR 74 For high-speed switching Type Marking Ordering Code tape and reel BAR 74 JBs Q62702-F704 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 50 V Peak reverse voltage VRM 50
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Q62702-F704
OT-23
MARKING SOT23 jbs
BAR74
diode marking 74
Q62702-F704
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Untitled
Abstract: No abstract text available
Text: Silicon Switching Diode ● BAR 74 For high-speed switching Type Marking Ordering Code tape and reel BAR 74 JBs Q62702-F704 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 50 V Peak reverse voltage VRM 50
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Q62702-F704
OT-23
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BAL74
Abstract: BAR74 sot23 marking code 74
Text: BAL74/BAR74. Silicon Switching Diode For high-speed switching applications BAL74 BAR74 3 1 3 2 1 Type BAL74 BAR74 2 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol
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PDF
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BAL74/BAR74.
BAL74
BAR74
BAL74
BAL74,
BAR74
sot23 marking code 74
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BAL74
Abstract: BAR74
Text: BAL74/BAR74. Silicon Switching Diode For high-speed switching applications BAL74 BAR74 3 1 3 2 1 Type BAL74 BAR74 2 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol
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BAL74/BAR74.
BAL74
BAR74
BAL74
BAL74,
BAR74
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BAL74
Abstract: BAR74 BCW66
Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 ! ! Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAL74/BAR74.
BAL74
BAR74
BAL74
BAR74
BCW66
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Untitled
Abstract: No abstract text available
Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 ! ! Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAL74/BAR74.
BAL74
BAR74
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Fuji Electric SM
Abstract: No abstract text available
Text: 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG811S06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown l Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.
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YG811S06R
Fuji Electric SM
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 74 Silicon Switching Diode • For high-speed switching Type Marking Ordering Code tape and reel BAR 74 JBs Q62702-F704 Pin Configuration Package1) SOT-23 o-— ^ 1 -o 1 EHA07002 Maximum Ratings Parameter Symbol Values Unit V Reverse voltage
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OCR Scan
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PDF
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Q62702-F704
OT-23
EHA07002
aS35bQ5
01202Mb
flS3Sb05
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BAR74
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode BAR 74 • For high-speed switching Type Marking Ordering Code tape and reel B A R 74 JB s Q62702-F704 Pin Configuration Package1) SOT-23 °-^ -O 1 EKA07003 Maximum Ratings Parameter Symbol Values Unit Reverse voltage
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Q62702-F704
OT-23
EHS00011
BAR74
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Q62702-A615
Abstract: marking JB Q62702-A704 marking JB diode 74 MARKING CODE 74 MARKING
Text: Silicon Switching Diode • BAR 74 For high-speed switching Type 0 BAR 74 Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package JB Q62702-A615 Q62702-A704 SOT 23 Maximum ratings Parameter Symbol Ratings Unit Reverse voltage
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Q62702-A615
Q62702-A704
Q62702-A615
marking JB
Q62702-A704
marking JB diode
74 MARKING CODE
74 MARKING
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Untitled
Abstract: No abstract text available
Text: Silicon Switching Diode 3SE D • BAR 74 053b3E0 OOlbM^G Ü ■ SIP SIEMENS/ SP CLi SEMICONDS For high-speed switching Type B BAR 74 Marking JB Ordering code for versions In bulk Q62702-A615 Ordering code for versions on 8 mm-tape Q62702-A704 Package SOT 23
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053b3E0
Q62702-A615
Q62702-A704
175PF
23b32Ã
T-03-Q9
023b3SD
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TI43A
Abstract: No abstract text available
Text: ERC30 i .5A : Outline Drawings FAST RECOVERY DIODE A I Features • y * > 2 'X f c :- K a i # # c a t ' W ^ S uper high speed sw itchin g. tjz : Marking • te V F Ä 5-P-K: £ Color code : Orange Low Vp IS S JB S Abridged type name High reliability o •
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ERC30
1995-9095t/R89
TI43A
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Untitled
Abstract: No abstract text available
Text: S C 1 7 i .OA : Outline Drawings k _ GENERAL USE RECTIFIER DIODE : Features ESD-Proof • * B S 8* A f » m Surface m ount device •K « « t4 i/jv : Marking High reliability • Applications • V iSftd fE O H General purpose rectifier applications
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19S24
I95t/R89)
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Untitled
Abstract: No abstract text available
Text: ERA83-004<ia : Outline D raw ings SCHOTTKY BARRIER DIODE Features • ifeVF IS /K : Marking Low V F Super high speed sw itchin g. • tv— «fElîfe: Ù « ffi i -j afcfgfct e ►►►►► - ti'j—Fv-ÿ High reliability by planer design. • ' J ^ m m f
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12fl-D
500ns,
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RA83
Abstract: ERA83-004 A4DC
Text: ERA83-004<ia : Outline D raw ings SCHOTTKY BARRIER DIODE Features • ifeVF IS /K : Marking Low V F Super high speed sw itchin g. • t v — «fElîfe : Ù « f f i i -j af c f gf c t e ► ► ►►► High reliability by planer design. • ' J ^ m m f
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ERA83-004
500ns,
RA83
A4DC
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ERA83-004
Abstract: RA83
Text: ERA83-004<ia : Outline D raw ings SCHOTTKY BARRIER DIODE Features • ifeVF IS /K : Marking Low V F Super high speed sw itchin g. • t v — «fElîfe : Ù « f f i i -j af c f gf c t e ► ► ►►► High reliability by planer design. • ' J ^ m m f
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ERA83-004
500ns,
JEKi141
RA83
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schottky marking lk
Abstract: A84 marking code ERA84-009 T12E
Text: E R A 8 4 - 0 0 9 ia > a SCHOTTKY BARRIER DIODE • f t « : Features • te V F liS/F ; Marking Low Vp m x j -?■>■? x e - w & m *7 -: - K Color code : Blue S u p e r h ig h speed s w itc h in g . • :7 V — t - H igh reliab ility by p la n e r d e sig n .
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ERA84-009
70CC/W)
schottky marking lk
A84 marking code
T12E
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode m tm OUTLINE Package : MTO-3P S20LC60US U nit I mm W eight 6 .1 g T y p : 600V 20A Feature • ® M ± FRD • High Voltage Super FRD • Low Noise • trr= 25ns I • trr=25ns • Small ö jc • 0 jc jb V l'£ l'
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S20LC60US
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marking JB SCHOTTKY BARRIER DIODE
Abstract: marking JB diode SG40TC12M diode marking jb
Text: Schottky Barrier Diode Twin Diode mtmm SG40TC12M o u tlin e Package : FTO-220G Unit : mm o -y H d ^ J 120V 40A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • < S Ir = 6 0 |j A Tj=175°C Full Molded Low Ir=60|jA Resistance for thermal run-away
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FTO-220G
SG40TC12M
J533-1)
50IIz
J533-1
marking JB SCHOTTKY BARRIER DIODE
marking JB diode
SG40TC12M
diode marking jb
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away
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OCR Scan
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FTO-220G
J533-1)
SG30TC12M
50IIz
J533-1
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marking JB SCHOTTKY BARRIER DIODE
Abstract: marking JB diode diode marking jb
Text: Schottky Barrier Diode Twin Diode mtmm S G 20T C 1 2 M o u t lin e U nit : mm Package : FTO-220G o -y H d ^ J 120V 20A 4.5 Feature • Tj=175°C • 7 Jb = E -Jb K • Tj=175°C • <SIr =30|j A • Low Ir =30| jA • Resistance for thermal run-away • Full Molded
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OCR Scan
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FTO-220G
J533-1)
SG20TC12M
50IIz
marking JB SCHOTTKY BARRIER DIODE
marking JB diode
diode marking jb
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