BAS19
Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol
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BAS19LT1,
BAS20LT1,
BAS21LT1
BAS19LT1
BAS20LT1
BAS19
BAS20
BAS21
r14525
BAS19
BAS19LT1
BAS20
BAS20LT1
BAS21
BAS21LT1
sot23 marking JR
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BAS19LT1
Abstract: sot-23 MARKING CODE JS BAS19 BAS20 BAS20LT1 BAS21 BAS21LT1 SOT23 Marking JX marking 556c
Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol
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BAS19LT1,
BAS20LT1,
BAS21LT1
BAS19LT1
BAS20LT1
BAS19
BAS20
BAS21
r14525
BAS19LT1
sot-23 MARKING CODE JS
BAS19
BAS20
BAS20LT1
BAS21
BAS21LT1
SOT23 Marking JX
marking 556c
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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diode sod-123 marking code 120
Abstract: marking H1
Text: PRELIMINARY DATASHEET 400mW SOD-123 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package High Voltage & High Conductance Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG Device Type Device Marking TCBAV19W TCBAV20W TCBAV21W
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400mW
OD-123
TCBAV19W
TCBAV20W
TCBAV21W
diode sod-123 marking code 120
marking H1
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diode sod-123 marking code 120
Abstract: SOD-123 marking code H3
Text: PRELIMINARY DATASHEET 400mW SOD-123 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package High Voltage & High Conductance Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG Device Type Device Marking TCBAV19W TCBAV20W TCBAV21W
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400mW
OD-123
TCBAV19W
TCBAV20W
TCBAV21W
diode sod-123 marking code 120
SOD-123 marking code H3
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LBAL99WT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LBAL99WT1G Switching Diode • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING ORDERING INFORMATION . Device Marking LBAL99WT1G JF 3000 Tape & Reel JF 10000 Tape & Reel LBAL99WT1G SC-70
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LBAL99WT1G
SC-70
LBAL99WT1G
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1N4148WS
Abstract: No abstract text available
Text: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C
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1N4148WS=
1N4148WS
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diode marking 74
Abstract: BAV74 Q62702-A693 DIODE BAV JS v
Text: Silicon Switching Diode Array ● For high-speed switching ● Common cathode BAV 74 Type Marking Ordering Code tape and reel BAV 74 JAs Q62702-A693 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage
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Q62702-A693
OT-23
diode marking 74
BAV74
Q62702-A693
DIODE BAV JS v
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Untitled
Abstract: No abstract text available
Text: SC016 1.0A (200V to 600V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35 ±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking Surface-mount device High reliability BB Applications Type name Abridged
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SC016
SC016-2
SC016-4
SC016-6
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reco relay
Abstract: No abstract text available
Text: SC016 1.0A (200V to 600V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35 ±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking Surface-mount device High reliability BB Applications Type name Abridged
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SC016
SC016-2
SC016-4
SC016-6
reco relay
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Device Type Device Marking BAV19WS S5 BAV20WS S6 BAV21WS S7 Small Outline Flat Lead Plastic Package High Voltage Switching Diode Absolute Maximum Ratings Symbol PD TA = 25°C unless otherwise noted
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200mW
OD-323
BAV19WS
BAV20WS
BAV21WS
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DIODE g6
Abstract: LBAV74LT1
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1 3 1 ANODE 3 CATHODE 1 2 ANODE 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING LBAV74LT1 = JA MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Symbol VR IF
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LBAV74LT1
236AB)
DIODE g6
LBAV74LT1
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A2 DIODE SMD CODE MARKING
Abstract: PMBD353 SMD marking CODE 4F pj-25 diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PMBD353 Schottky barrier double diode Product specification Supersedes data of 1999 May 25 2001 Oct 15 Philips Semiconductors Product specification Schottky barrier double diode FEATURES PMBD353 MARKING
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M3D088
PMBD353
SCA73
613514/04/pp8
A2 DIODE SMD CODE MARKING
PMBD353
SMD marking CODE 4F
pj-25 diode
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philips bav23s
Abstract: MARKING L31 SMD BAV23S L31 l31 sot23 SMD L31 BAV23S Philips smd code marking sot23 marking L31 PHILIPS
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV23S General purpose double diode Product specification Supersedes data of 1999 May 05 2001 Oct 12 Philips Semiconductors Product specification General purpose double diode FEATURES BAV23S MARKING
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M3D088
BAV23S
SCA73
613514/05/pp8
philips bav23s
MARKING L31 SMD
BAV23S L31
l31 sot23
SMD L31
BAV23S
Philips smd code marking sot23
marking L31 PHILIPS
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Untitled
Abstract: No abstract text available
Text: SC017 1.0A (200V to 400V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking ESD-proof Surface-mount device High reliability BH Applications Type name Abridged
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SC017
SC017-2
SC017-4
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Untitled
Abstract: No abstract text available
Text: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code
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SC321
SC321-2
SC321
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marking code HB
Abstract: Mark 10A
Text: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code
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SC321
SC321-2
SC321
marking code HB
Mark 10A
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ED marking code diode
Abstract: SC321-2 SC321 marking HB
Text: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code
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SC321
SC321-2
SC321
ED marking code diode
SC321-2
marking HB
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Collmer SC
Abstract: 0003B55 marking WM diode
Text: SCOI 5 1.0A <§ Outline Drawing GENERAL USE RECTIFIER DIODE • Features Marking • Surface mount device • High reliability I -I nuL MARKING -CATHODE -SYMBOL -J S Z Applications I • General purpose rectifier applications —
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OCR Scan
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SC015-6
0003b55
SC015
0Q03b5b
Collmer SC
marking WM diode
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diode code ae
Abstract: No abstract text available
Text: Central" CLL2003 Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type isasilicon switching diode manufactured by the epitaxialplanar process, designed for applications requiring high voltage capability. Marking Code: Cathode band.
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OCR Scan
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CLL2003
100hA
100mA
200mA
100i2
diode code ae
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode Array BGX 50 A • Bridge configuration • High-speed switch diode chip Type Marking Ordering Code tape and reel BGX 50 A U1s Q62702-G38 Pin Configuration Package1) SOT-143 4 OU00007 Maximum Ratings per Diode Parameter Symbol
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OCR Scan
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Q62702-G38
OT-143
OU00007
fl235bD5
fi235bD5
0235bD5
Q122235
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