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    DIODE MARKING J35 Search Results

    DIODE MARKING J35 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING J35 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TK75020

    Abstract: toshiba laptop schematic diagram tokoam variable coils HIGH POWER MOSFET TOSHIBA D22 diode marking code 6pin sot-89 marking d9 itt 2907A laptop CCFL inverter SCHEMATIC laptop inverter ccfl tk11650
    Text: Toko IC Products Selection Guides: • • • • • • • • • • Linear Regulators DC-DC Converters Switching Power Supply ICs Temperature Sensors Solid State Switches Variable Capacitance Diodes Application Notes Resistor Calculation Tool Product Selection Tree


    Original     		TK112xxBM OT-23L TK112xxBU OT-89-5 TK113xxBM TK113xxBU OT-89ado 1-800-PIK-TOKO 1-800-DIGIKEY TK75020 toshiba laptop schematic diagram tokoam variable coils HIGH POWER MOSFET TOSHIBA D22 diode marking code 6pin sot-89 marking d9 itt 2907A laptop CCFL inverter SCHEMATIC laptop inverter ccfl tk11650 PDF

    smd diode ZENER marking code J3

    Abstract: HDR2x7 zener diode J3 programmer schematic R2h DIODE SMD marking code R1D SMD MARKING CODE j3 diode marking r2d smd code marking r2d sot23 Zener diode smd marking c6
    Text: 5 4 3 2 1 15 SW1A DIG-8 SW1B DIG-8 C2 100pF C3 100pF C4 100pF C5 .01uF C6 22pF C7 22pF D 2 1 1 R2B 220 2 R2A 220 D 16 15 16 +3V SW1G DIG-8 SW1D DIG-8 11 9 12 SW1E DIG-8 6 6 8 R2F 220 8 5 R2H 220 5 4 7 3 SW1C DIG-8 R2E 220 4 R2D 220 7 R2G 220 3 R2C 220 13 10


    Original     		100pF TSSOP-24 CONRA-10P-100X-EEProg 20QN50T14040 74VHC221A LP2981 smd diode ZENER marking code J3 HDR2x7 zener diode J3 programmer schematic R2h DIODE SMD marking code R1D SMD MARKING CODE j3 diode marking r2d smd code marking r2d sot23 Zener diode smd marking c6 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD K1109 Preliminary N-CHANNEL JFET N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE „ DESCRIPTION The UTC K1109 is N-channel JFET for electrets condenser microphone. „ FEATURES * High GM Implies Low Transfer loss * Built-In Gate-Source Diode and Resistor Implies Fast Power on


    Original     		K1109 K1109 K1109-x-AC3-R K1109-x-AE3-R K1109L-x-AC3-R K1109L-x-AE3-R K1109G-x-AC3-R K1109G-x-AE3-R OT-113 OT-23 PDF

    J36 SOT23

    Abstract: "N-Channel JFET" N-channel JFET diode marking j35 K1109 n-channel JFET sot23
    Text: UNISONIC TECHNOLOGIES CO., LTD K1109 N-CHANNEL JFET N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE „ DESCRIPTION The UTC K1109 is N-channel JFET for electrets condenser microphone. „ FEATURES * High GM Implies Low Transfer loss * Built-In Gate-Source Diode and Resistor Implies Fast Power on


    Original     		K1109 K1109 K1109-x-AC3-R K1109-x-AE3-R K1109L-x-AC3-R K1109L-x-AE3-R K1109G-x-AC3-R K1109G-x-AE3-R OT-113 OT-23 J36 SOT23 "N-Channel JFET" N-channel JFET diode marking j35 n-channel JFET sot23 PDF

    K1109

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD K1109 N-CHANNEL JFET N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE „ DESCRIPTION The UTC K1109 is N-channel JFET for electrets condenser microphone. „ FEATURES * High GM Implies Low Transfer loss * Built-In Gate-Source Diode and Resistor Implies Fast Power on


    Original     		K1109 K1109 K1109L-x-AC3-R K1109G-x-AC3-R K1109L-x-AE3-R K1109G-x-AE3-R OT-113 OT-23 QW-R206-009 PDF

    J3E diode

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD K1109 N-CHANNEL JFET N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE „ DESCRIPTION The UTC K1109 is N-channel JFET for electret condenser microphone. „ FEATURES * High gm implies low transfer loss * Built-in gate-source diode and resistor implies fast power on


    Original     		K1109 K1109 K1109L K1109G K1109-x-AC3-R K1109-x-AE3-R K1109L-x-AC3-R K1109L-x-AE3-R K1109G-x-AC3-R K1109G-x-AE3-R J3E diode PDF

    diode marking j35

    Abstract: "N-Channel JFET" n-channel JFET sot23 K1109 J3E diode condenser microphone electret condenser microphone datasheets J37 transistor N-channel JFET J36 SOT23
    Text: UNISONIC TECHNOLOGIES CO., LTD K1109 N-CHANNEL JFET N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE „ DESCRIPTION The UTC K1109 is N-channel JFET for electrets condenser microphone. „ FEATURES * High gm implies low transfer loss * Built-in gate-source diode and resistor implies fast power on


    Original     		K1109 K1109 K1109L K1109G K1109-x-AC3-R K1109-x-AE3-R K1109L-x-AC3-R K1109L-x-AE3-R K1109G-x-AC3-R K1109G-x-AE3-R diode marking j35 "N-Channel JFET" n-channel JFET sot23 J3E diode condenser microphone electret condenser microphone datasheets J37 transistor N-channel JFET J36 SOT23 PDF

    diode marking j35

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD K1109 N-CHANNEL JFET N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE „ DESCRIPTION The UTC K1109 is N-channel JFET for electrets condenser microphone. „ FEATURES * High GM Implies Low Transfer loss * Built-In Gate-Source Diode and Resistor Implies Fast Power on


    Original     		K1109 K1109 K1109L-x-AE3-R K1109G-x-AE3-R K1109L-x-AQ3-R K1109G-x-AQ3-R K1109L-x-AC3-R K1109G-x-AC3-R OT-23 OT-723 diode marking j35 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD K1109 N-CHANNEL JFET N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE  DESCRIPTION The UTC K1109 is N-channel JFET for electrets condenser microphone.  FEATURES * High GM Implies Low Transfer loss * Built-In Gate-Source Diode and Resistor Implies Fast Power on


    Original     		K1109 K1109 K1109G-x-AE3-R K1109G-x-AQ3-R OT-23 OT-723 QW-R206-009 PDF

    diode marking j35

    Abstract: K1109 "N-Channel JFET" N-channel JFET marking J36 j37 marking
    Text: UNISONIC TECHNOLOGIES CO., LTD K1109 N-CHANNEL JFET N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE „ DESCRIPTION The UTC K1109 is N-channel JFET for electrets condenser microphone. „ FEATURES * High GM Implies Low Transfer loss * Built-In Gate-Source Diode and Resistor Implies Fast Power on


    Original     		K1109 K1109 K1109L-x-AC3-R K1109G-x-AC3-R K1109L-x-AE3-R K1109G-x-AE3-R OT-113 OT-23 QW-R206-009 diode marking j35 "N-Channel JFET" N-channel JFET marking J36 j37 marking PDF

    POWERPAK SO8

    Abstract: Philips 1812 footprints bas16 philips d9 dl sot23 BZX384B11-V marking C5 SOT23-5 VISHAY 3216FF5-r Q1/Mark is CK 0603 diode LM4120 R112426000
    Text: SiP11205/06DB Vishay Siliconix Intermediate Bus Converter Demo Board Using SiP11205 or SiP11206 INTRODUCTION Both SiP11205 and SiP11206 are controllers for half-bridge intermediate bus converters. The difference between SiP11205 and SiP11206 is that SiP11205 has built-in feedforward circuitry and SiP11206 does not. The feed-forward


    Original     		SiP11205/06DB SiP11205 SiP11206 POWERPAK SO8 Philips 1812 footprints bas16 philips d9 dl sot23 BZX384B11-V marking C5 SOT23-5 VISHAY 3216FF5-r Q1/Mark is CK 0603 diode LM4120 R112426000 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD K1109 N-CHANNEL JFET N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE  DESCRIPTION The UTC K1109 is N-channel JFET for electrets condenser microphone.  FEATURES * High GM Implies Low Transfer loss * Built-In Gate-Source Diode and Resistor Implies Fast Power on


    Original     		K1109 K1109 K1109L-x-AE3-R K1109G-x-AE3-R K1109L-x-AQ3-R K1109G-x-AQ3-R OT-23 OT-723 QW-R206-009 PDF

    diode marking j35

    Abstract: K1109
    Text: UNISONIC TECHNOLOGIES CO., LTD K1109 N-CHANNEL JFET N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE „ DESCRIPTION The UTC K1109 is N-channel JFET for electrets condenser microphone. „ FEATURES * High GM Implies Low Transfer loss * Built-In Gate-Source Diode and Resistor Implies Fast Power on


    Original     		K1109 K1109 K1109L-x-AE3-R K1109G-x-AE3-R K1109L-x-AC3-R K1109G-x-AC3-R OT-23 OT-113 QW-R206-009 diode marking j35 PDF

    1N3595AUS

    Abstract: 1N3595US JANKCB1N3595 JANTXV 1N3595 equivalent 1N3595-1 1N3595UR-1 1n3595us-1 1N3595A-1 j3595 JS3595A
    Text: INCH-POUND MIL-PRF-19500/241M 25 January 2010 SUPERSEDING MIL-PRF-19500/241L 10 June 2008 The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 April 2010. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED


    Original     		MIL-PRF-19500/241M MIL-PRF-19500/241L 1N3595-1, 1N3595US, 1N3595UR-1, 1N3595A-1, 1N3595AUS, 1N3595AUR-1, MIL-PRF-19500. 1N3595AUS 1N3595US JANKCB1N3595 JANTXV 1N3595 equivalent 1N3595-1 1N3595UR-1 1n3595us-1 1N3595A-1 j3595 JS3595A PDF

    el 847

    Abstract: smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12
    Text: I I n t e r n a t io n a l Rec tifie r Case Outlines Bridges 140 0311} 110 0311) B1 (0.212) ¡Ö24Öj 113(0 ttO) 7 IIP » ) S.MfO.217) UO0.1M) 110(001* Case style D-70 B2 «400 Ml) I.W JIH 140(0 252) 0 30*012) 11.20(0441) • to (0.240) 3 W (P 1 2 2 ) I I— j


    OCR Scan     		t0Jtt04M) IR2130D MO-Q38AB el 847 smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12 PDF

    RPACK 10k x 9

    Abstract: Zener diode smd marking code C24 LV142MLN R22D control PDU board PCB DIODE smd marking R14 j35 SMD Marking Code J502-ND Zener diode smd marking code S3 CAP-0603 dni
    Text: 5 4 3 2 1 +3_3V +3_3V J2 1 2 +3_3V TP9 R12-F R12-G R12-H 220 220 220 220 9 +3_3V 10 1 2 3 4 5 6 7 8 6 5 4 3 2 1 44 43 42 41 40 16 15 14 13 12 11 10 9 DATA 6 CLK 5 XX 4 E_WR 3 ENH 2 X 1 2 7 6 4 5 1 3 TP3 1 TP1 220 11 C30 R24 51 22pF 220 12 C45 R20 F_IN 1 220


    Original     		R12-G R12-H R10-B R10-C 100pF R10-D PE97042 AD797 96GHz-3 20MHz RPACK 10k x 9 Zener diode smd marking code C24 LV142MLN R22D control PDU board PCB DIODE smd marking R14 j35 SMD Marking Code J502-ND Zener diode smd marking code S3 CAP-0603 dni PDF

    diode marking j35

    Abstract: 2SK1109 D1594 J34-J35 2SK110 2SK1109 J35 marking j32 2SK1109J31
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1109 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK1109 is suitable for converter of ECM. 0.8 FEATURES 1.8 MIN. • Compact package


    Original     		2SK1109 2SK1109 SC-59 diode marking j35 D1594 J34-J35 2SK110 2SK1109 J35 marking j32 2SK1109J31 PDF

    LTC5569

    Abstract: LTC5541 LT5554 LTC5551 LTC5510 LTC5583 LTC5577
    Text: LTC5577 300MHz to 6GHz High Signal Level Active Downconverting Mixer Features Description +30dBm IIP3 +15dBm Input P1dB n 0dB Conversion Gain n Wideband Differential IF Output n Very Low 2 x 2 and 3 × 3 Spurs n IF Frequency Range Up to 1.5GHz n Low LO-RF Leakage


    Original     		LTC5577 300MHz 30dBm 15dBm 16-Lead LTC2208 LTC2153-14 V/380mA V/180mA 16-Bit, LTC5569 LTC5541 LT5554 LTC5551 LTC5510 LTC5583 LTC5577 PDF

    LTC5569

    Abstract: LTC5541 LT5554 LTC5551 LTC5510 LTC5583
    Text: LTC5577 300MHz to 6GHz High Signal Level Active Downconverting Mixer Features Description +30dBm IIP3 +15dBm Input P1dB n 0dB Conversion Gain n Wideband Differential IF Output n Very Low 2 x 2 and 3 × 3 Spurs n IF Frequency Range Up to 1.5GHz n Low LO-RF Leakage


    Original     		LTC5577 300MHz 30dBm 15dBm 16-Lead LTC2208 LTC2153-14 V/380mA V/180mA 16-Bit, LTC5569 LTC5541 LT5554 LTC5551 LTC5510 LTC5583 PDF

    LTC5582

    Abstract: G37 IC DB 16-16 LTC5567 LTC5567IUF#PBF LTC5583 LT5557 LTC5569 LTC5567IUF 112pF ic
    Text: LTC5567 300MHz to 4GHz Active Downconverting Mixer with Wideband IF Features Description n n n n n n n n n The LTC 5567 is optimized for RF downconverting mixer applications that require wide IF bandwidth. The part is also a pin-compatible upgrade to the LT5557 active mixer,


    Original     		LTC5567 300MHz LT5557 LTC6416 16-Bit LTC6412 LT5554 LT5578 400MHz LT5579 LTC5582 G37 IC DB 16-16 LTC5567IUF#PBF LTC5583 LTC5569 LTC5567IUF 112pF ic PDF

    LTC5569

    Abstract: LT5557 LT5554 LTC5585 LTC5567 LT5578 LTC5583
    Text: LTC5567 300MHz to 4GHz Active Downconverting Mixer with Wideband IF FEATURES n n n n n n n n n n n DESCRIPTION The LTC 5567 is optimized for RF downconverting mixer applications that require wide IF bandwidth. The part is also a pin-compatible upgrade to the LT5557 active mixer,


    Original     		LTC5567 300MHz LT5557 1950MHz 294mW 14GHz, 530MHz 80dBm, 72dBm LTC5569 LT5554 LTC5585 LTC5567 LT5578 LTC5583 PDF

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212 PDF

    diode marking j35

    Abstract: 2SK1109 2SK1109 marking j35 2SK1109 equivalent
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    TXAL 228 B

    Abstract: 2SAB12 K1589 2sc2554 k2499 P015M 2SD 1694 2482S K2134 diode zener nt 1243
    Text: QUICK REFERENCE GUIDE 2 ELECTRICAL SPECIFICATION LIST 2 PIN ULTRA SUPER MINI MOLD • Noise Clipping Diode fMNCD[ JC Series) M axim am R atings5 Electrical Characteristics {T a = 2 5 ‘CJ O a = 2 5 ‘C ì Type No. Application V b r (V) P tm W ) M IN . S M A X


    OCR Scan     		/PA17Q2 PA1710 TXAL 228 B 2SAB12 K1589 2sc2554 k2499 P015M 2SD 1694 2482S K2134 diode zener nt 1243 PDF