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    DIODE MARKING CODE MN Search Results

    DIODE MARKING CODE MN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE MN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 10-PZ12NMA027MR-M340F68Y targat datasheet 1200V/ 30mΩ flowMNPC 0-SIC Features flow0 12mm housing ● Rohm Silicon Carbide Power MOSFET ● Rohm™ Silicon Carbide Power Schottky Diode ● MNPC Topology with Splitted Output ● Ultra Low Inductance with Integrated DC-capacitors


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    10-PZ12NMA027MR-M340F68Y PDF

    Untitled

    Abstract: No abstract text available
    Text: SM MN04L L20IS S Logic Le evel N-Ch Po ower MOSFE ET 200V LOGIC N-Chan nnel MOSFET Fe eatures • Drain-Sourrce breakdo own voltage e: BVDSS=200 0V Min. • Low gate charge: c Qg=4nC (Typ.) • Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.) • 100% avala


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    MN04L L20IS SMN04L SMN04L2 04L20 06-JAN-12 KSD-T6Q017-000 PDF

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    Abstract: No abstract text available
    Text: 10-FZ06NBA041FS01-P915L78 preliminary datasheet flowBOOST0 600V/41mΩ Features flow0 12mm housing ● High efficiency symmetric boost ● Ultrafast switching frequency with MOSFET ● Low Inductance Layout ● Tandem to NPC and MNPC modules Target Applications


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    10-FZ06NBA041FS01-P915L78 00V/41mâ PDF

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    Abstract: No abstract text available
    Text: 10-PZ06NBA041FS-P915L68Y preliminary datasheet flowBOOST0 600V/41mΩ Features flow0 12mm housing ● High efficiency symmetric boost ● Ultra fast switching with MOSFET and SiC diodes ● Low Inductance Layout ● Tandem to NPC and MNPC modules Target Applications


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    10-PZ06NBA041FS-P915L68Y 00V/41mâ PDF

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    Abstract: No abstract text available
    Text: Passively Cooled Diode Laser Bar SPL MNxx Only available in North America SP-pack. left , DL-pack. (right) Features Applications • Uncollimated (MN-series) • 1 cm-laser bar mounted on passive heat sink, no water required • Highly reliable strained layer InGa(Al)As/GaAs


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    PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    Abstract: No abstract text available
    Text: WILLAS FM120-M+ LM1MA141WATHRU Common Anode Silicon FM1200-M+ LM1MA142WA 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Dual Switching DiodeSOD-123+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


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    FM120-M+ LM1MA141WA LM1MA142FM1200-M OD-123+ OD-123H M140-MH FM150-MH FM160-MH FM180-MH FM1100-MH PDF

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    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use LM1MA141WAT1G LM1MA142WAT1G in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.


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    LM1MA141WAT1G LM1MA142WAT1G SC-70/SOT-323 OT-323/SC-70 3000/Tape LM1MA141KWA3G 10000/Tape LM1MA141WAT1G PDF

    anode common fast recovery diode dual

    Abstract: LM1MA142WAT1G Diode marking CODE 5M
    Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use LM1MA141WAT1G LM1MA142WAT1G in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.


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    LM1MA141WAT1G LM1MA142WAT1G SC-70/SOT-323 OT-323/SC-70 3000/Tape LM1MA141KWA3G 10000/Tape anode common fast recovery diode dual LM1MA142WAT1G Diode marking CODE 5M PDF

    LM1MA142WAT1G

    Abstract: No abstract text available
    Text: S-LM1MA142WAT3G LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.


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    S-LM1MA142WAT3G AEC-Q101 LM1MA141WAT1G S-LM1MA141WAT1G LM1MA142WAT1G S-LM1MA142WAT1G SC-70/SOT-323 LM1MA141WAT1G, LM1MA142WAT1G, LM1MA142WAT1G PDF

    din 74

    Abstract: GWOY6039 GWOY6040 Q62702-P3555 Q62702-P5312 K1222
    Text: Passively Cooled Diode Laser Bar SPL MNxx No Optics SPL MYxx Fast-Axis Collimation Preliminary Data SP-pack. left , DL-pack. (right) Features Applications • Uncollimated (MN-series) or fast-axis collimated radiation (MY-series) • 1 cm-laser bar mounted on passive heat sink,


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    GWOY6039 GWOY6040 din 74 GWOY6039 GWOY6040 Q62702-P3555 Q62702-P5312 K1222 PDF

    D1980

    Abstract: diode marking F5
    Text: 2SD1980F5 Transistor, NPN, Darlington pair Features Dimensions Units : mm • • available in CPT F5 (SC-63) package package marking: D1980*Q, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) damper diode is incorporated


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    2SD1980F5 SC-63) D1980 2SD1980 2SD1980F5 2SD1980F5, diode marking F5 PDF

    aajf

    Abstract: No abstract text available
    Text: ERA81-004 1a * ± 'J 'W.M'W-Y : Outline Drawings -f= t— K SCHOTTKY BARRIER DIODE : Features • ffiV r • Low Vp : Marking A 7 —n — K : ffl Color code : Silver Super high speed sw itchin g. High reliability by planer design. Voltage class : Applications


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    ERA81-004 aajf PDF

    Untitled

    Abstract: No abstract text available
    Text: P - P * # - f * - K Super F ast Recovery Diode Axial Diode OUTLINE DIMENSIONS S3L60 Case : 1 .4 f 25 =1 600V 2.2A § 25 ±2 7 -°" i a+0 2 ^ 4.4 -o.i i * •S B Œ L L D î 0 CD H o (D •trr 5 0 n s If ) ^ Color code (Blue) sk^ epbhbbh Marking ffl m S3L


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    S3L60 0033ti PDF

    ERB44

    Abstract: ERB44-08 T151 T930
    Text: ERB44 ia I < s a a ia t ^ ^ - K : Outline Drawings FAST RECOVERY DIODE : Features :7jv : Marking High voltage by mesa design • f t flMRtt # 7- 3- K:» High reliability C olor code : Green • E J ii I Applications Abridged type name 7* Voltage class High speed sw itch in g .


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    ERB44 30tf3^ I95t/R89) ERB44-08 T151 T930 PDF

    marking 2U 77 diode

    Abstract: marking DIODE 2U 04 marking code IAM 12CT ERC84-009 diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U
    Text: ERC84-009I3A K • fl- B '+ ii : Outline Drawings SCHOTTKY BARRIER DIODE Features • 1&VF Low VF W$z7j\ : Marking Ä 7 “- 3 - K : f f Color code : Blue Super high speed switching. • 7 V - * - f t « C J&ftflH Ktt High reliability by planer design. Abridged type nam e'"'" Î 1


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    ERC84-009 marking 2U 77 diode marking DIODE 2U 04 marking code IAM 12CT diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U PDF

    Untitled

    Abstract: No abstract text available
    Text: S 'a y M u - / tU T K Schottky Barrier Diod« Axial Diode O U T L IN E D IM E N S IO N S Case : Axial D1NS4 40V 1A B= 2QMIN ' ¿2.6 o » 20MIN -M—° C athode band Marking S4 6N - - u - y h A ! » < f « ï D ate code Type No. U nit I mm • R A TIN G S Absolute Maximum Ratings


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    PDF

    smd diode schottky code marking 5A

    Abstract: SMD MARKING CODE M 4 Diode U01 SMD diode smd marking 5P smd DIODE code marking Q KIV* diode smd diode marking c3 diode SMD MARKING CODE JV DE5PC3 smd code marking js
    Text: Schottky Barrier Diode Twin Diode mnm DE5PC3 Package o u t lin e E-pack U nit I mm W eigh t 0.326 k T y p 30V 5A 1 *1 *1 0 @ ® Feature • SMD • Ultra-Low V f=0.4V • High lo Rating -Small-RKG • SMD • î 3 ® V f =0.4V T y p e No. Date code Main Use


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    0336g TJ-25TC smd diode schottky code marking 5A SMD MARKING CODE M 4 Diode U01 SMD diode smd marking 5P smd DIODE code marking Q KIV* diode smd diode marking c3 diode SMD MARKING CODE JV DE5PC3 smd code marking js PDF

    Scans-00828

    Abstract: DE10PC3 SHINDENGEN DIODE 0336g
    Text: Schottky Barrier Diode Twin Diode mnm DE10PC3 o u tlin e E-pack Package Unit I mm Weight 0.326k Typ r r« 30 V 10A œ - Feature • SMD • SMD • î 3 V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-RKG 10PC3 n - y W X fW Date code Main Use


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    DE10PC3 0336g I-111, J532-1) Scans-00828 DE10PC3 SHINDENGEN DIODE PDF

    MARKING 3D regulator

    Abstract: shindengen regulator DIODE JSu DE10SC3L 3D smd marking DIODE marking VU SHINDENGEN DIODE smd diode marking sim
    Text: Schottky Barrier Diode Twin Diode mnm DE10SC3L Package o u t lin e E-pack Unit Imm Weight 0.326k Typ 3 0 V 10 A 1 * 1 01 * @® F e a tu re • SMD • SMD • <SV f= 0.45V • Low V f=0.45V • P rrsm7 V C 3 > ì / i (SK ì 3) Type No. • P rrsm Rating


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    DE10SC3L 0306g I-111, J532-1 MARKING 3D regulator shindengen regulator DIODE JSu DE10SC3L 3D smd marking DIODE marking VU SHINDENGEN DIODE smd diode marking sim PDF

    RJP 30 h1

    Abstract: marking code YS SMD SMD XM M1FL20U MARKING CODE SMD IC smd marking HK M1FL20 diode SMD MARKING CODE JV SMD MARKING CODE l6n
    Text: Super Fast Recovery Diode single Diode mnm o u t lin e Package ! M1F M 1 FL2 0 U Unit I mm Weight 0.027k Typ 200V 1.1 A ij'/ —K t— ? Cathode m ark (D Feature • /J ^ S M D • Sm all SM D • i& y 'f X • trr=35ns • Low Noise • trr=35ns |L 6 N


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    M1FL20U 027jiiTyp) 20/xm I-111, J532-1) RJP 30 h1 marking code YS SMD SMD XM M1FL20U MARKING CODE SMD IC smd marking HK M1FL20 diode SMD MARKING CODE JV SMD MARKING CODE l6n PDF

    113t smd code

    Abstract: SMD MARKING CODE 16t smd diode marking codes 3t 113T smd diode schottky code marking 1A d28 smd
    Text: Schottky Barrier Diode single Diode DG1H3 mnm o u t lin e Package G1F U nit I mm W eight 0.01 1r T yp 3 0 V 1A 3.5 Feature |D28l •I2 'J 'S !S M D • Ultra-small SMD • i8 ü § y = 0 .8 m m • Ultla-thin PKG=0.8mm • Low V f=0.36V • V f = 0 .3 6 V


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    /i77U-ffiffrRGlt 113t smd code SMD MARKING CODE 16t smd diode marking codes 3t 113T smd diode schottky code marking 1A d28 smd PDF

    F600M

    Abstract: S08230 l32 sot23 hp 3080 diode MARK, g5 sot23
    Text: ¥J>0%. HEWLETT ft "Em PACKARD Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodea Optimized fo r Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface M ount SOT-23


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    HSMP-38XX HSMP-48XX OT-23 HEWPS057P* 6091-4211E 5091-B184E F600M S08230 l32 sot23 hp 3080 diode MARK, g5 sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: l i 5E D POUEREX INC • 72^41,31 0DÜ3bhB 7 " F -â ? -ü mNEREX ED_ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Dual SCft, SCR/Diode Isolated Modules


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    1S697 BP107, Amperes/100-2000 ED430825 PDF