diode marking code fj
Abstract: marking 724 diode SOT23 MARKING code fj SOT23 code fj SB491D marking code TS
Text: SB491D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification and switching power supply power supply applications Feature • 3 Ultra Low VF 2 1 SOT-23 Plastic Package Marking Marking Code: FJ Absolute Maximum Ratings Ta= 25OC Parameter
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SB491D
OT-23
diode marking code fj
marking 724 diode
SOT23 MARKING code fj
SOT23 code fj
SB491D
marking code TS
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PDF
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marking 724 diode
Abstract: SOT23 code fj marking code fj sot-23 marking code IR
Text: SB491D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification and switching power supply power supply applications Feature • 3 Ultra Low VF 2 1 SOT-23 Plastic Package Marking Marking Code: FJ Absolute Maximum Ratings Ta= 25OC Parameter
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Original
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SB491D
OT-23
marking 724 diode
SOT23 code fj
marking code fj
sot-23 marking code IR
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PDF
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smd diode code WP
Abstract: diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode
Text: SIEMENS BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting SMD ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OCR Scan
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Q62702-A1190
OD-323
50/60Hz,
smd diode code WP
diode smd marking WP
140KW
diode smd marking code WP
diode SMD CODE s 2A
schottky rectifier diode
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PDF
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diode rectifier siemens
Abstract: No abstract text available
Text: SIEMENS BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies ESD: Electrostatic discharge sensitive device, observe handling precaution BAT 62-02W L 1 =C Q62702-A1028 h Pin Configuration < Marking Ordering Code CM Type
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OCR Scan
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2-02W
2-02W
Q62702-A1028
SCD-80
diode rectifier siemens
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage
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OCR Scan
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Q62702-A3466
OT-343
EHN00019
100ns,
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PDF
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Marking A7S sot
Abstract: No abstract text available
Text: SIEMENS BAV 99S Silicon Sw itching Diode Array • For high-speed switching applications • Connected in series • Internal galvanic isolated Diodes in one package Type Marking O rdering Code Pin C onfiguration BAV 99S A7s 1/4 = A1 Q62702-A1277 Package
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OCR Scan
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Q62702-A1277
OT-363
EHN00019
100ns,
Marking A7S sot
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PDF
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R8915
Abstract: ERC25 marking AJ 7
Text: ERC25 i .2A I W I W i i : Outline Drawings FAST RECOVERY DIODE : Features IR High voltage by mesa design. * Marking tf High reliability * 7 - n - r :W Color code : Green : Applications Abridged type name *V HiBE? 5* Voltage class High speed sw itching. - V -r-9
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OCR Scan
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ERC25
100C3C3CDO
R8915
marking AJ 7
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PDF
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TFK 715
Abstract: BAW56S
Text: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 Q62702-A1253 Package 2/5 = C2 3/6 = A1/2 SOT-363
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OCR Scan
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Q62702-A1253
OT-363
100ns,
TFK 715
BAW56S
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PDF
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151S5
Abstract: No abstract text available
Text: ERC05 1 .2A - * ’ Outline Drawings _ GENERAL USE R EC TIFIER DIODE ! Features • If— Hi gh surge current • Sift fl 14 • S tf I Marking High reliability : Applications A 7 - 3 - K : fi Color code : Orange • V X S tifc General purpose rectifier applications
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OCR Scan
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ERC05
l95t/R89
151S5
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PDF
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marking AF
Abstract: diode ERD28
Text: ERD28 i .5A K : Outline Drawings FAST RECOVERY DIODE I Features High voltage by mesa design. H S I tF • Marking • f tflH R tt High reliability A f —3 - V Color code Green «ÂfêS • 51& : Applications Abridged type name 5* Voltage class High speed switching.
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OCR Scan
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ERD28
I-125
I95t/R
marking AF
diode ERD28
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PDF
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Untitled
Abstract: No abstract text available
Text: ERB35 ia I Outline Drawings FAST RECOVERY DIODE : Features • iê/K : Marking Soft recovery, low noise • A f t f f i't i High reliability * —3 — K $ Cole r code : Applications Abridged type n am e^' DP f t -> Silver s. 1 ^ O ÍV - Í- 'T - Í ft-
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OCR Scan
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ERB35(
I95t/R89)
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PDF
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F760
Abstract: GGT DIODE ERB32 F553 H150 T151 T810 T930 J3E diode
Text: ERB32 i .2A • * » ■ * » : Outline Drawings FAST RECOVERY DIODE : Features Super high speed switching H S tF I Marking • te V F A 5- 3 - V ; fi Low V F Color code : Orange • «fifS-ft Abridged type name ŒŒ? « Voltoge class D yh fc Lot No. High reliability
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OCR Scan
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ERB32
TKESTS30
aTi30S3
I95t/R89)
F760
GGT DIODE
F553
H150
T151
T810
T930
J3E diode
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PDF
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C 5388
Abstract: A-128 ERB38 T151 T460 T760 T810 T930 pic t460
Text: ERB38 o .8A re) : Outline Drawings f4 * - Y FA ST RECOVERY DIODE 1 0.8 28MIN 28MIN- Features Super high speed sw itching : Marking \tjz A5-3-K: ö Color code : White Low VF in turn on • a t s ia t t «5£ » £ Abridged type name H igh reliability Voltage class
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OCR Scan
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ERB38
30S3-^
eaTa30
I95t/R89)
Shl50
C 5388
A-128
T151
T460
T760
T810
T930
pic t460
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PDF
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marking 2U 77 diode
Abstract: marking DIODE 2U 04 marking code IAM 12CT ERC84-009 diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U
Text: ERC84-009I3A K • fl- B '+ ii : Outline Drawings SCHOTTKY BARRIER DIODE Features • 1&VF Low VF W$z7j\ : Marking Ä 7 “- 3 - K : f f Color code : Blue Super high speed switching. • 7 V - * - f t « C J&ftflH Ktt High reliability by planer design. Abridged type nam e'"'" Î 1
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OCR Scan
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ERC84-009
marking 2U 77 diode
marking DIODE 2U 04
marking code IAM
12CT
diode marking code 7-7-7-7
marking 2U diode
marking DIODE 2U
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PDF
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h51 diode
Abstract: No abstract text available
Text: ERB44 ia  jÈ S S S f t ^ V i—K • W fé '+ fè : Outline Drawings FAST RECOVERY DIODE ■ ¡E H I : Features :7jv : Marking High voltage by mesa design. • ftflM R tt # 7 - 3 - K: m High reliability Color code : Green ■ E J ii : Applications Abridged type name
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OCR Scan
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ERB44(
10msS
Tg30S
I95t/R89)
h51 diode
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PDF
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a124 es
Abstract: rkm v
Text: E R D 3 2 3 A * ± 'J : Outline Drawings -K FAST RECOVERY DIODE Features : Marking S u p e r h ig h speed s w itc h in g • ffiVF A5 - 3 - K Color code ; 0 range Low V F B sW i Abridged Large c u rre n t • SSft is-ti ty p e name 5 7. V oltage class
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OCR Scan
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l95t/RB9
a124 es
rkm v
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PDF
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trace code TO-220
Abstract: J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D
Text: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram
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FJP3307D
FJP3307D
O-220
FJP3307DH1
FJP3307DH1TU
FJP3307DH2
FJP3307DH2TU
FJP3307DTU
trace code TO-220
J3307D-1
SWITCH IC
J3307
transistor Electronic ballast
3307D
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PDF
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j5304d
Abstract: j5304 transistor j5304d FJE5304DTU NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o
Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application
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FJE5304D
FJE5304D
O-126
FJE5304DTU
j5304d
j5304
transistor j5304d
NPN transistor Electronic ballast
NPN J5304D
to-126 npn switching transistor 400v
free transistor and ic equivalent data o
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PDF
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Untitled
Abstract: No abstract text available
Text: y a y h V Schottky Barrier Diode # — K - v fjiia D3S4M 4 0 V OUTLINE DIMENSIONS Case : 1.4 ^ 3 A 25 ±2 m 7 1<? ìt 2S=2 a f 4.4 -o t - • T j 1 5 0 ”C • P rrsm • 1.4 K Axial Diode -É 5 - 1* K U— K o - -W w&m ''C o lor code ffl m •S R B ü
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OCR Scan
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QQQ31Ã
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PDF
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Untitled
Abstract: No abstract text available
Text: FJH1101 Ultra Low Leakage Diode General Description An Ultra Low Leakage Diode in the DO-35 package. The forward voltage is typically greater than 0.5 volts at 1.0 micro-ampere. This product is light sensitive, any damage to the body coating will affect the reverse leakage when exposed to light.
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FJH1101
DO-35
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FR4 substrate fiberglass
Abstract: AV02-1388EN schottky diode application sot-23 diode common anode t4 HSMS-2865 HSMS-286C
Text: HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS‑286x family of DC biased detector diodes have been designed and optimized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications
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HSMS-286x
HSMS286x
OT-23/SOT10
HSMS-286x-TR2G
HSMS-286x-TR1G
HSMS-286x-BLKG
HSMS-286x.
2005-20089Avago
5989-4023EN
AV02-1388EN
FR4 substrate fiberglass
schottky diode application
sot-23 diode common anode t4
HSMS-2865
HSMS-286C
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PDF
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marking I2 SOT23-5
Abstract: No abstract text available
Text: Thaï mLUMHP AECWKLAERTDT Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface Mount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/|iW at 915 MHz up to 35 mV/jiW at 2.45 GHz
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OCR Scan
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HSMS-2850
HSMS-2860
OT-23/
OT-143
HSMS-2860
OT-23
5966-0928E
5966-2939E
marking I2 SOT23-5
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PDF
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Untitled
Abstract: No abstract text available
Text: W hü1 H E W L E T T mLttM P A C K A R D Surface Mount RF Schottky Detector Diodes in SOT-363 SC-70, 6 Lead Technical Data Features • Surface Mount SOT-363 Package • High Detection Sensitivity: Up to 50 mV/nW at 915 MHz Up to 35 mV/nW at 2.45 GHz Up to 25 mV/nW at 5.80 GHz
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OCR Scan
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OT-363
SC-70,
285L/P
286L/P/R
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PDF
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U9024N
Abstract: BSS 250 IRFR P-Channel MOSFET
Text: P D - 9.1506 International IGR Rectifier PRELIMINARY 1RFR/U9024N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -55V RDS(on) = 0.175Í2
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OCR Scan
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IRFR9024N)
IRFU9024N)
1RFR/U9024N
4A5545E
002flL07
U9024N
BSS 250
IRFR P-Channel MOSFET
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PDF
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