philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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Untitled
Abstract: No abstract text available
Text: P1ZAA POW-R-BRIK Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Phase Control Dual Diode Module 985 Amperes/Up to 5000 Volts C L (4 PLACES) G (3 PLACES) TAPPED HOLE X .50 DEEP E - (4 PLACES) (FOR TYP. 1/4-20 SOCKET HD. SCR.
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MIL-A-8625,
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MARKING CODE ZAA
Abstract: 5000 volt scr MIL-A-8625 marking W36
Text: P1ZAA POW-R-BRIK Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Phase Control Dual Diode Module 985 Amperes/Up to 5000 Volts C L (4 PLACES) G (3 PLACES) TAPPED HOLE X .50 DEEP E - (4 PLACES) (FOR TYP. 1/4-20 SOCKET HD. SCR.
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MIL-A-8625,
MARKING CODE ZAA
5000 volt scr
MIL-A-8625
marking W36
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irlml2402
Abstract: IRLML5203 irlml5203 H IRLML6302
Text: PD - 93967A PROVISIONAL IRLML5203 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier
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3967A
IRLML5203
OT-23
EIA-481
EIA-541.
irlml2402
IRLML5203
irlml5203 H
IRLML6302
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Untitled
Abstract: No abstract text available
Text: PD - 93967A PROVISIONAL IRLML5203 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier
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3967A
IRLML5203
OT-23
EIA-481
EIA-541.
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Untitled
Abstract: No abstract text available
Text: PPJA3403 30V P-Channel Enhancement Mode MOSFET Voltage -30 V SOT-23 -3.1A Current Unit: inch mm Features RDS(ON) , VGS@-10V, ID@-3.1A<98mΩ RDS(ON) , VGS@-4.5V, ID@-2.2A<114mΩ RDS(ON) , VGS@-2.5V, ID@-1.1A<165mΩ Advanced Trench Process Technology
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PPJA3403
OT-23
2011/65/EU
IEC61249
OT-23
MIL-STD-750,
2014-REV
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very high current schottky diode
Abstract: pn junction diode ideality factor Waveform Clipping With Schottky 10E4 diode HSMS-2700 HSMS-2700-BLK HSMS-2700-TR1 hsms-270x J20B
Text: High Performance Schottky Diode for Digital Applications Preliminary Technical Data 2:24 PM,06/05/98 HSMS-2700/ -2702 -270B/-270C Features •Ultra-low series resistance for higher current handling Package Lead Code Identification Description The HSMS-2700 series of
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HSMS-2700/
-270B/-270C
HSMS-2700
HSMS-270x
very high current schottky diode
pn junction diode ideality factor
Waveform Clipping With Schottky
10E4 diode
HSMS-2700-BLK
HSMS-2700-TR1
J20B
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Untitled
Abstract: No abstract text available
Text: Datasheet P-Channel Enhancement Mode MOSFET Features z TDM2301 Pin Description -20V/-3A , RDS ON =72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V z Super High Dense Cell Design z Reliable and Rugged z Lead Free Available (RoHS Compliant) Top View of SOT23-3L
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TDM2301
-20V/-3A
OT23-3L
TDM2301â
TDM2301
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AN-994
Abstract: IRLR3303 IRLU3303
Text: 2002-03-06 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-186-98 IRLR3303 HEXFET D-Pak PD - 91316F IRLR/U3303 HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive
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IRLR3303
91316F
IRLR/U3303
IRLR3303)
IRLU3303)
AN-994
IRLU3303
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Untitled
Abstract: No abstract text available
Text: DMN3067LW N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS 30V PRODUCT ADVANCED NEW INFORMATION ID TA = +25°C RDS(ON) 67mΩ @ VGS = 4.5V 2.6A 70mΩ @ VGS = 4.0V 2.5A 98mΩ @ VGS = 2.5V 2.2A Description This new generation MOSFET has been designed to minimize the
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DMN3067LW
DS36640
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CSG3001-18A04
Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power
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400F415
460F460
500F500
630F415
730F460
800F500
570F575
630F660
870F575
1000F660
CSG3001-18A04
thyristor BBC
thyristor aeg
BBC DSDI 35
WG15013B8C
WG9017
abb sami star
SM18CXC805
sm13cxc174
CSG2001-18A04
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Untitled
Abstract: No abstract text available
Text: PD - 96166 IRLML5203GPbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS RDS on max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A *
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IRLML5203GPbF
OT-23
EIA-481
EIA-541.
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Untitled
Abstract: No abstract text available
Text: PD - 95902 SMPS MOSFET IRFBA90N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 200V RDS on max ID 0.023Ω 98A Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
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IRFBA90N20DPbF
AN1001)
Super-220â
IRFBA22N50A
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AN1001
Abstract: IRFBA22N50A
Text: PD - 95902 SMPS MOSFET IRFBA90N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 200V RDS on max ID 0.023Ω 98A Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
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IRFBA90N20DPbF
AN1001)
Super-220TM
IRFBA22N50A
Super-220
AN1001
IRFBA22N50A
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TC7660
Abstract: TC7660EOA inverter pic assembly code microchip 3 phase inverter TC7660CPA TC7660EOA713 COA0221 MS-001 OA71 3 phase inverter 120 conduction mode theory
Text: M TC7660 Charge Pump DC-to-DC Voltage Converter Features Package Types • • • • • Wide Input Voltage Range: +1.5V to +10V Efficient Voltage Conversion 99.9%, typ Excellent Power Efficiency (98%, typ) Low Power Consumption: 80 µA (typ) @ VIN = 5V
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TC7660
RS-232
D-85737
DS21465B-page
TC7660
TC7660EOA
inverter pic assembly code
microchip 3 phase inverter
TC7660CPA
TC7660EOA713
COA0221
MS-001
OA71
3 phase inverter 120 conduction mode theory
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IRF3205 equivalent
Abstract: irf3205 mosfet transistor irf3205 DRIVER IRF3205 IRF3205 IR driver for IRF3205 IRF3205 DATASHEET for IRF3205 transistor irf3205 irf3205 mosfet
Text: PD - 9.1279C IRF3205 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.008Ω ID = 98A Description Fifth Generation HEXFETs from International Rectifier
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1279C
IRF3205
O-220
IRF3205 equivalent
irf3205 mosfet transistor
irf3205 DRIVER
IRF3205
IRF3205 IR
driver for IRF3205
IRF3205 DATASHEET
for IRF3205
transistor irf3205
irf3205 mosfet
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IRFP064N
Abstract: IRF3205 application IRFP064N equivalent irf3205 DRIVER IRF3205 IRFPE30
Text: PD 9.1383 IRFP064N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.008 Ω ID = 98A Description Fifth Generation HEXFETs from International Rectifier
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IRFP064N
O-247
IRFP064N
IRF3205 application
IRFP064N equivalent
irf3205 DRIVER
IRF3205
IRFPE30
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IRLML5203PBF
Abstract: IRLML2402 IRLML2803 marking BS mosfet
Text: PD - 94895A IRLML5203PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier
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4895A
IRLML5203PbF
OT-23
EIA-481
EIA-541.
IRLML5203PBF
IRLML2402
IRLML2803
marking BS mosfet
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IRF3205S
Abstract: AN-994 IRF530S
Text: PD - 9.1304A IRF3205S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.008Ω ID = 98A Description
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IRF3205S
IRF3205S
AN-994
IRF530S
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F0D2741
Abstract: QTC 4N25 QTC 4502 MOC 4N25 F0D2711 GENERAL SEMICONDUCTOR diodes marking code rq diodo detector HCPL-2501 E90700 qtc 6n139
Text: 1655 Scott Blvd Santa Clara, CA 95050-4169 408 985-2400 FAX No. (408) 296-3256 Underwriters Laboratories Inc. File E90700 Issusd Revised Vol 11/17/1998 10/30/2001 FOLLOW-UP SERVICE PROCEDURE (TYPE R) COMPONENT Manufacturer : (621133-001) Applicant : (725625-001)
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OCR Scan
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E90700
FOD27X2Y
HCPL-05XX
HCPL-04XX
HCPL-07XX
HCPL-06XX
FOD050L
FOD053L
HCPL-0530
HCPL-0531
F0D2741
QTC 4N25
QTC 4502
MOC 4N25
F0D2711
GENERAL SEMICONDUCTOR diodes marking code rq
diodo detector
HCPL-2501
E90700
qtc 6n139
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bss138
Abstract: BSS98 siemens 350 98 Q62702-S566 Q62702-S558
Text: S I E M E N S SIPMOS " Small-Signal Transistors BSS 98 BSS 138 VDS = 50 V lD = 0 .3 /0 .2 2 A ^DS on = 3-5 O • N channel • Enhancement mode • Packages: TO-92, SOT-231) Type Marking Ordering code for version on bulk Ordering code for version in tap e2)
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OCR Scan
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OT-231)
Q62702-S464
Q62702-S558
62702-S517
Q62702-S566
bss138
BSS98
siemens 350 98
Q62702-S566
Q62702-S558
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marking: F12S
Abstract: No abstract text available
Text: Preliminary Data Sheet 12126 01/98 quietIR Series International i q r Rectifier 8EWF.S SURFACE MOUNTABLE FAST SOFT RECOVERY DIODE VF < 1.3V @ 8A V = 80ns ^RRM 1000 to 1200V Description/Features The 8EWF.S fast soft recovery QUIETIR rectifier series has been optimized for combined short
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O-252AA
marking: F12S
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