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    DIODE MARKING CODE 4N Search Results

    DIODE MARKING CODE 4N Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE 4N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BAV222 / BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) BAV222 BAW222 ! ,  ! ,  ,  ,  Type Package Configuration Marking BAV222


    Original     		PDF BAV222 BAW222 OT416) BAV222 50/60Hz, BAV222, BAW222,

    SCD-80

    Abstract: SCD80 DIODE smd marking A4 BAW222 BAV222 BCR108T SC75 SC79
    Text: BAV222/BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAV222


    Original     		PDF BAV222/BAW222 OT416) BAV222 BAW222 SCD-80 SCD80 DIODE smd marking A4 BAW222 BAV222 BCR108T SC75 SC79

    smd code A1s

    Abstract: DIODE smd marking A4s smd code A4s DIODE smd marking A1s marking a4s SMD A1S DIODE smd marking Ag smd a4s BAW22
    Text: BAV222 / BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) BAV222 BAW222 ! ,  ! ,  ,  ,  Type BAV222* BAW222* Package SC75 SC75 Configuration


    Original     		PDF BAV222 BAW222 OT416) BAV222 BAV222* BAW222* BAV222, BAW222, smd code A1s DIODE smd marking A4s smd code A4s DIODE smd marking A1s marking a4s SMD A1S DIODE smd marking Ag smd a4s BAW22

    SMN01L20

    Abstract: No abstract text available
    Text: SMN01L20Q Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • 0.85A, 200V, RDS on =1.35Ω @ VGS=10V  Low gate charge: Qg=4nC (Typ.)  Fast switching  100% avalanche tested  RoHS compliant device D G Ordering Information Part Number


    Original     		PDF SMN01L20Q SMN01L20 OT-223 01-OCT-13 KSD-T5A009-001 SMN01L20

    IS085

    Abstract: No abstract text available
    Text: SMN01L20Q Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • 0.85A, 200V, RDS on =1.35Ω @ VGS=10V  Low gate charge: Qg=4nC (Typ.)  Fast switching  100% avalanche tested  RoHS compliant device D G Ordering Information D S Part Number


    Original     		PDF SMN01L20Q SMN01L20 OT-223 26-AUG-11 KSD-T5A009-000 IS085

    04l20

    Abstract: No abstract text available
    Text: SMN04L20IS Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)  100% avalanche tested  RoHS compliant device


    Original     		PDF SMN04L20IS SMN04L20 04L20 01-OCT-13 KSD-T6Q017-001 04l20

    Untitled

    Abstract: No abstract text available
    Text: STK0170 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • High voltage: BVDSS=700V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On resistance: RDS(on)=12.5  Low Crss: Crss=2.5pF (Typ.)  RoHS compliant device (Max.)


    Original     		PDF STK0170 30-NOV-12 KSD-T0A013-003

    BAW56

    Abstract: No abstract text available
    Text: BAW56 HIGH-SPEED DOUBLE DIODE High-speed switching in thick and thin-film circuits Features • Small plastic SMD package. • High switching speed:max.4ns. • Continuous reverse voltage:max.75V • Repetitive peak reverse voltage:max.85V • Repetitive peak forward current:max.450mA.


    Original     		PDF BAW56 450mA. OT-23 BAW56

    Untitled

    Abstract: No abstract text available
    Text: SMN04L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)  100% avalanche tested  RoHS compliant device


    Original     		PDF SMN04L20D SMN04L20 O-252 04L20 01-OCT-13 KSD-T6O036-001

    Untitled

    Abstract: No abstract text available
    Text: SMN04L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)  100% avalanche tested  RoHS compliant device


    Original     		PDF SMN04L20D SMN04L20 O-252 04L20 29-AUG-11 KSD-T6O036-000

    SEMTECH MARKING

    Abstract: smd diode code WH Semtech Electronics
    Text: BAS216WT High-speed switching diode PINNING PIN Features • • • • • Small ceramic SMD package High switching speed: max. 4ns Continuous reverse voltage: max. 75V Repetitive peak reverse voltage: max. 85V Repetitive peak forward current: max. 500mA


    Original     		PDF BAS216WT 500mA OD-523 OD-523 SEMTECH MARKING smd diode code WH Semtech Electronics

    SMD MARKING CODE WG

    Abstract: BAS216WS smd DIODE code marking Q Forward Holdings SMD MARKING CODE jtp
    Text: BAS216WS High-speed switching diode PINNING PIN Features • • • • • Small ceramic SMD package High switching speed: max. 4ns Continuous reverse voltage: max. 75V Repetitive peak reverse voltage: max. 85V Repetitive peak forward current: max. 500mA


    Original     		PDF BAS216WS 500mA OD-323 OD-323 SMD MARKING CODE WG BAS216WS smd DIODE code marking Q Forward Holdings SMD MARKING CODE jtp

    SMD MARKING CODE WG

    Abstract: diode wg diode wg smd BAS216WS smd DIODE code marking Q SMD MARKING CODE jtp SMD diode MARKING CODE 10 on 724
    Text: BAS216WS High-speed switching diode PINNING PIN Features • • • • • Small ceramic SMD package High switching speed: max. 4ns Continuous reverse voltage: max. 75V Repetitive peak reverse voltage: max. 85V Repetitive peak forward current: max. 500mA


    Original     		PDF BAS216WS 500mA OD-323 OD-323 SMD MARKING CODE WG diode wg diode wg smd BAS216WS smd DIODE code marking Q SMD MARKING CODE jtp SMD diode MARKING CODE 10 on 724

    BAS216WT

    Abstract: 29 DIODE SMD CODE MARKING SMD MARKING CODE jtp
    Text: BAS216WT High-speed switching diode PINNING PIN Features • • • • • Small ceramic SMD package High switching speed: max. 4ns Continuous reverse voltage: max. 75V Repetitive peak reverse voltage: max. 85V Repetitive peak forward current: max. 500mA


    Original     		PDF BAS216WT 500mA OD-523 OD-523 BAS216WT 29 DIODE SMD CODE MARKING SMD MARKING CODE jtp

    diode SMD MARKING CODE A6

    Abstract: smd diode a6 smd diode marking a6 DIODE A6 SMD diode code a6 DIODE SMD A6 sod-323 Marking a6 100v 500ma diode smd diode sod-323 marking code k SOD323 Package footprint
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode BAS316 FEATURES Pb z Very small plastic SMD package. z High switching speed:max.4ns z Continuous reverse voltage:max.100v z Repetitive peak reverse voltage:max.100v z Repetitive peak forward current:max.500mA


    Original     		PDF BAS316 500mA OD-323 BL/SSSDB013 diode SMD MARKING CODE A6 smd diode a6 smd diode marking a6 DIODE A6 SMD diode code a6 DIODE SMD A6 sod-323 Marking a6 100v 500ma diode smd diode sod-323 marking code k SOD323 Package footprint

    BAV16W

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode BAV16W FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance


    Original     		PDF BAV16W OD-123 BL/SSSDA009 BAV16W

    BAV16WS

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode BAV16WS FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance


    Original     		PDF BAV16WS OD-323 BL/SSSDB017 BAV16WS

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1N4148W FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance


    Original     		PDF 1N4148W OD-123 BL/SSSDA001

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1N4148WS FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance


    Original     		PDF 1N4148WS OD-323 BL/SSSDB002

    1N4148WS

    Abstract: T4 SOD-323 marking code PB surface mount diode
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1N4148WS FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance


    Original     		PDF 1N4148WS OD-323 BL/SSSDB002 1N4148WS T4 SOD-323 marking code PB surface mount diode

    T4 SOD-123

    Abstract: DIODE T4 marking bl galaxy MARKING CODE diode sod123 t4 SOD-123 marking code T4 diode marking T4 sod123 DIODE T4 marking sod123 1N4148W 1N4148W-T4 1N4148W T4 diode sod-123 marking code t4
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1N4148W FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance


    Original     		PDF 1N4148W OD-123 BL/SSSDA001 T4 SOD-123 DIODE T4 marking bl galaxy MARKING CODE diode sod123 t4 SOD-123 marking code T4 diode marking T4 sod123 DIODE T4 marking sod123 1N4148W 1N4148W-T4 1N4148W T4 diode sod-123 marking code t4

    Untitled

    Abstract: No abstract text available
    Text: BAL99 Green SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • • • • • • • • • Fast Switching Speed: Maximum of 4ns Low Forward Voltage: Maximum of 0.715V at 1mA Low Capacitance: Maximum of 2pF Surface Mount Package Ideally Suited for Automated Insertion


    Original     		PDF BAL99 J-STD-020D MIL-STD-202, DS12009

    Untitled

    Abstract: No abstract text available
    Text: BAL99 Green SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • • • • • • • • • Fast Switching Speed: Maximum of 4ns Low Forward Voltage: Maximum of 0.715V at 1mA Low Capacitance: Maximum of 2pF Surface Mount Package Ideally Suited for Automated Insertion


    Original     		PDF BAL99 J-STD-020D MIL-STD-202, DS12009

    b83006

    Abstract: diode schottky b83006 B83-006 diode b83
    Text: E R B83-006 2A : Outline Drawings I SCHOTTKY BARRIER DIODE : Features • vP IS/jv : Marking Low VF Ä 7 - 3 - K : Sit Color code : Super high speed switching. High reliability by planer design Abridged type name 3LŒ? 7 * • E IS I : Applications Voltage ciass


    OCR Scan     		PDF B83-006 I95t/R89) b83006 diode schottky b83006 diode b83