sot143 code marking MS
Abstract: BAW100 DIODE marking CJSS SOT143 DUAL DIODE sot143 Marking code MS
Text: BAW100 DUAL, ISOLATED HIGH SPEED SWITCHING DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 is a Dual Isolated High Speed Switching Diode in a SOT-143 surface mount package, designed for high speed switching applications.
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BAW100
BAW100
OT-143
150mA
05-April
sot143 code marking MS
DIODE marking CJSS
SOT143 DUAL DIODE
sot143 Marking code MS
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sot143 code marking MS
Abstract: CJSS SOT-143 baw100 sot143 Marking code MS
Text: Central BAW100 TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 is a Dual, Isolated High Speed Silicon Switching Diode in a SOT-143 surface mount package, designed for high speed switching applications.
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BAW100
OT-143
150mA
20-February
sot143 code marking MS
CJSS SOT-143
sot143 Marking code MS
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Untitled
Abstract: No abstract text available
Text: International ^Rectifier P D - 9.1234 IRFPC60LC H EXFET Power M O S F E T • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced CjSS, Coss, Cres Isolated Central Mounting Hole Dynamic dv/dt Rated
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IRFPC60LC
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Untitled
Abstract: No abstract text available
Text: i P D - 9.1233 International jag Rectifier IR F P C 5 0 L C HEXFET Power MOSFET • • • Ultra Low G ate C harge Reduced G ate Drive Requirem ent Enhanced 3 0 V V gs Rating • • • • Reduced CjSS, C 0ss> Isolated Central Mounting Hole Dynam ic dv/dt Rated
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IRF360LC
Abstract: No abstract text available
Text: International PD' 9-,23° lo g Rectifier_ IR FP 360LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Cjssi C qss>Crss Isolated Central Mounting Hole Dynamic dv/dt Rated
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360LC
IRF360LC
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Untitled
Abstract: No abstract text available
Text: International ggjRectifier P D - 9.1232 IRFP460LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced CjSS, Coss, CrgS Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated
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IRFP460LC
61350BadHomburgTel:
5545E
GD223D1
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FDG315N
Abstract: SC70-6
Text: =M l C O N D U C T O R PRELIMINARY tm FDG315N N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
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FDG315N
FDG315N
SC70-6
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314P
Abstract: No abstract text available
Text: S E M IC O N D U C TO R PRELIMINARY tm FDG314P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This
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FDG314P
SC70-6
314P
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FDG314P
Abstract: SC70-6
Text: =M l C O N D U C T O R PRELIMINARY tm FDG314P Digital FET, P-Channel General Description Features This P -C h an n el e nh ancem en t mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DM OS technology. This
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FDG314P
FDG314P
SC70-6
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7130-1 transistor
Abstract: TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X
Text: SM035X_ Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY M O SFETs V d s (V ) N-Channel P-Channel 20 -20 FEATURES rDS(on) ( ß ) lD (m A ) 5 @ VGs = 4.5 V 200
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SM035X_
S-02367--Rev.
23-Oct-OO
7130-1 transistor
TRANSISTOR mosfet SD 1074
marking code LG
Si1301
RU4 diode
SM035X
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FDG311N
Abstract: SC70-6
Text: S E M IC O N D U C TO R tm FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel M O SFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state
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FDG311N
SC70-6
FDG311N
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1B marking transistor
Abstract: st ld 33 FDD603AL transistor themal
Text: E M IC O N D U C T O R tm FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T his N-Channel logic level enhancem ent m ode power fie ld e ffe c t tra n s is to r is produced using F a irc h ild ’s proprietary, high cell density, DM OS technology. This
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FDD603AL
FDD603AL,
1B marking transistor
st ld 33
FDD603AL
transistor themal
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fdg316P
Abstract: SC70-6
Text: S E M IC O N D U C TO R tm FDG316P P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level M OSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
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FDG316P
FDG316P
SC70-6
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00QC
Abstract: No abstract text available
Text: Central BAW100 semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEM ICONDUCTOR BAW100 is a Dual, Isolated High Speed Silicon Switching Diode in a SOT-143 surface mount package, designed for high speed switching applications.
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BAW100
OT-143
4000lF
150mA
20-February
OT-143
00QC
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st smd diode marking code
Abstract: smd diode marking code jl an smd diode marking code SM
Text: i I I > I • PD-9.1008 International I s l Rectifier IRF720S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements
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IRF720S
SMD-220
D-6380
D0215b5
st smd diode marking code
smd diode marking code jl an
smd diode marking code SM
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FDD5690
Abstract: No abstract text available
Text: =M l C O N D U C T O R tm FDD5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDD5690
FDD5690,
FDD5690
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N mosfet 250v 600A
Abstract: No abstract text available
Text: PD - 9.1658A International IO R Rectifier IR F R /U 9214 PRELIMINARY HEXFET Power MOSFET • • • • • • P-Channel Surface Mount IRFR9214 Straight Lead (IRFU9214) Advanced Process Technology Fast Switching Fully Avalanche Rated Voss = -250V R d s (o ii )
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IRFR9214)
IRFU9214)
-250V
-252A
N mosfet 250v 600A
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1RFZ34
Abstract: SMD IRFZ34 AN-994 IRFZ34 IRFZ34S SMD-220
Text: International ^¡Rectifier PD-9.509B IRFZ34 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V d s s ~ 60V ^DS(on = 0 - 0 5 0 0 ID = 30A Description DATA
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IRFZ34
O-22Q
O-220
1RFZ34
SMD IRFZ34
AN-994
IRFZ34S
SMD-220
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smd diode WW1
Abstract: smd diode marking ww1 ww1 smd 1rfz46 smd ww1 14 SMD ww1 smd ww1 99 IRFZ46 AN-994 IRFZ46S
Text: PD-9.827 International Rectifier IRFZ46 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^d ss - 50 V ^DS on = 0 - 0 2 4 0 lD = 50* A Description DATA
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IRFZ46
0-024O
O-220
smd diode WW1
smd diode marking ww1
ww1 smd
1rfz46
smd ww1 14
SMD ww1
smd ww1 99
AN-994
IRFZ46S
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FT-107
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT107T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 250 mA, 200 VOLTS R D S o n = 1 4 0HM MAX This TMOS medium power field effect transistor is designed for
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MMFT107T1
OT-223
b3b7255
GGT3744
FT-107
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ft107
Abstract: ft107 sot-223
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect Transistor MMFT107T1 Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 250 mA, 200 VOLTS RDS on = 14 OHM MAX This TMOS medium power field effect transistor is designed for
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OT-223
ft107
ft107 sot-223
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IRFP340
Abstract: No abstract text available
Text: International S Rectifier PD-9.456C IRFP340 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 400V ^DS on = 0.55Q
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IRFP340
0-55O
O-247
O-220
O-218
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025Q
Abstract: No abstract text available
Text: PD - 9.1257C International IQ R Rectifier IRLML2402 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1 mm Available in Tape and Reel Fast Switching V dss =
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OT-23
1257C
IRLML2402
025Q
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irfp054
Abstract: diode ior 0014 CD 1517
Text: International S Rectifier PD-9.544A IRFP054 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 6 0 V ^DS on = 0 .0 1 4 Q
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IRFP054
O-247
T0-220
O-218
irfp054
diode ior 0014
CD 1517
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