marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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sot143 marking code u1s
Abstract: No abstract text available
Text: BGX50A. Silicon Switching Diode Array • Bridge configuration • High-speed switching diode chip BGX50A " ! , ! , " , , Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BGX50A.
BGX50A
OT143
sot143 marking code u1s
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Untitled
Abstract: No abstract text available
Text: BGX50A. Silicon Switching Diode Array • Bridge configuration • High-speed switching diode chip • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BGX50A " ! , ! , " , , Type BGX50A Package SOT143 Configuration bridge Marking
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BGX50A.
BGX50A
OT143
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Diode BGX50A
Abstract: sot143 marking code u1s BFP181 Marking code U1s BGX50A
Text: BGX50A. Silicon Switching Diode Array • Bridge configuration • High-speed switching diode chip • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BGX50A " ! , ! , " , , Type BGX50A Package SOT143 Configuration bridge Marking
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BGX50A.
BGX50A
OT143
Diode BGX50A
sot143 marking code u1s
BFP181
Marking code U1s
BGX50A
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BAW101
Abstract: BFP181
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 " ! , , Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage
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BAW101.
BAW101
OT143
50/60Hz,
BAW101
BFP181
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sot143 marking code u1s
Abstract: BFP181 BGX50A E6327
Text: BGX50A. Silicon Switching Diode Array Bridge configuration High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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BGX50A.
BGX50A
OT143
sot143 marking code u1s
BFP181
BGX50A
E6327
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sd832
Abstract: SD832-04
Text: SD832-04 40V / 2.0A Outline drawings, mm SCHOTTKY BARRIER DIODE 5.0 0.5 (0.8) (0.8) 0.2 1.2 max. 1.5 4.0 2.5 0.5 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design Cathode mark BF Applications Type No
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SD832-04
sd832
SD832-04
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Untitled
Abstract: No abstract text available
Text: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! , , Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
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marking CODE JTS
Abstract: BAS28 marking CODE JTS 56 BAS28W BFP181 BGA420
Text: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! , , Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
marking CODE JTS
BAS28
marking CODE JTS 56
BAS28W
BFP181
BGA420
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Untitled
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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BAW101.
BAW101
OT143
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Untitled
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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BAW101.
BAW101
OT143
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Untitled
Abstract: No abstract text available
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW101 " ! , , Type Package Configuration Marking BAW101 SOT143 parallel JPs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAW101.
BAW101
OT143
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BAW101
Abstract: BFP181
Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW101 " ! , , Type Package Configuration Marking BAW101 SOT143 parallel JPs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAW101.
BAW101
OT143
BAW101
BFP181
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BAS28
Abstract: No abstract text available
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
BAS28W,
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marking CODE JTS
Abstract: BAS28
Text: BAS28. Silicon Switching Diode For high-speed switching applications Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAS28.
BAS28/W
BAS28
BAS28W
OT143
OT343
BAS28,
BAS28W,
marking CODE JTS
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BF1108_BF1108R
Abstract: BF1108_1108R_3 MARKING CODE CGK BF1108 BF1108R
Text: BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The
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BF1108;
BF1108R
OT143B
BF1108)
OT143R
BF1108R)
BF1108
BF1108R
BF1108_BF1108R
BF1108_1108R_3
MARKING CODE CGK
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current
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OCR Scan
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Q62702-A1097
OT-363
40mmm
535bQ5
aH35fc
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Untitled
Abstract: No abstract text available
Text: SIEMENS BBY51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Ordering Code Pin Configuration BBY51 S3 Q62702-B631 1=A Package < Marking II CM Type
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BBY51
Q62702-B631
OT-23
fl235bOS
23Sb05
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6050
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode SMBD 6050 • For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 6050 s5A Q68000-A8439 Pin Configuration Package1) SOT-23 < i^ i s o-o ^ ' EHA07002 Maximum Ratings Parameter
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OCR Scan
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PDF
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Q68000-A8439
OT-23
6050
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon PIN Diode BA 596 Preliminary Data • Current-controlled RF resistor for switching and attenuating applications. • Frequency range above 1 MHz • Designed for low IM distortion Type Marking Ordering Code tape and reel BA 596 white P Q62702-A954
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OCR Scan
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Q62702-A954
OD-323
EHA07001
G0bb577
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DIODE marking code SJ
Abstract: ERC06 Diode RJ 4A PEI CF 30 FR A536
Text: E R C 6 i s a : Outline Drawings FAST RECOVERY DIODE Features •*^-T : Marking Most suitable for color T .V . damper. J> 7 — 3 — K : flf C o lo r code : Blue High voltage by mesa design. . <T3> High reliability Abridged type name $ 7 J* V o lta g e cla ss
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ERC06
DIODE marking code SJ
Diode RJ 4A
PEI CF 30 FR
A536
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