Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG Device Type BAT42XV2 BAT43XV2 Device Marking 6B 7B TA = 25°C unless otherwise noted Parameter
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200mW
OD-523
BAT42XV2
BAT43XV2
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BAT42XV2
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG Device Type BAT42XV2 BAT43XV2 Device Marking 6B 7B TA = 25°C unless otherwise noted Parameter
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200mW
OD-523
BAT42XV2
BAT43XV2
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BC547 sot package sot-23
Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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MDC5000T1
MDC5001T1
MDC3105LT1
BC547 sot package sot-23
BC337 BC547
2N2484 motorola
MSB81T1
zt751
pin configuration NPN transistor BC547 sot-23
MMBF4856
SOT-223 P1f
P1F motorola
2N2222A plastic package
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SG DIODE
Abstract: diode sg-64 diode sg 71
Text: W83773G/SG W83773G / W83773SG Nuvoton H/W Monitoring IC DATE: OCTOBER 21TH, 2009 REVISION: 1.2 -I- W83773G/SG TABLE OF CONTENTS- 1. GENERAL DESCRIPTION . 1
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W83773G/SG
W83773G
W83773SG
SG DIODE
diode sg-64
diode sg 71
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13001 s 6B
Abstract: AUIRS21844 SD-50 Rectifier Diode marking MDt AUIRS2184 AS2184 AUIRS21844S
Text: Automotive Grade AUIRS2184 4 S HALF-BRIDGE DRIVER Features • • • • • • • • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to + 600 V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20 V
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AUIRS2184
200Kohms)
375ns;
130uA;
/-100V
/-150V.
13001 s 6B
AUIRS21844
SD-50 Rectifier Diode
marking MDt
AS2184
AUIRS21844S
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U840 diode motorola
Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in
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DL151/D
Nov-2000
r14525
U840 diode motorola
motorola u860 diode
DIODE u1560
b2045 aka
u1560 DIODE
u860 diode
u1560
diode U3J
U820 diode
fast recovery diode ses5001
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1N967B
Abstract: 1N967B FAIRCHILD
Text: 1N957B - 1N979B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TA = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Value 500 Units mW 4.0 mW/°C -65 to +200
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1N957B
1N979B
1N979B
DO-35
1N958B
1N959B
1N960B
1N961B
1N967B
1N967B FAIRCHILD
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Melcher family K 1000
Abstract: Melcher M 1000 MELCHER THE POWER PARTNERS Melcher dc dc converter melcher Melcher K 1000 melcher imr 15 BW 6122 converter diagram Melcher family K 1000 ac-dc
Text: Benign Environment DC-DC Converters <40 W IMR 6-Family DC-DC Converters IMR 6-Family Input to output isolation test voltage 500 V DC Single or dual output • Input voltage range up to 3:1 • Input filter • High efficiency up to 75 % • • • • Outputs short-circuit-proof
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Untitled
Abstract: No abstract text available
Text: 83633^4 DDDD718 7b4 • BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 - L22
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DDDD718
BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS35
BAS29-
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Untitled
Abstract: No abstract text available
Text: SC802-09 1 .OA SCHOTTKY BARRIER DIODE I • Features Outline Drawing Marking • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I -CATHODE MARKING SYMBOL A - I Applications • High speed power switching
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SC802-09
500on
0Q03bH3
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BAS29
Abstract: BAS31 BAS35 diode 7B4
Text: • E3A33T4 DDDG716 7b4 ■ BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A S 2 9 - L20 BAS31 - L21
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D00G716
BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS35
BAS29-
diode 7B4
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon RF Switching Diode BAT 18 . • Low-loss VHF/UHF switch above 10 MHz • Pin diode with low forward resistance Type Marking Ordering Code Pin Configuration Package1 BAT 18 A2 Q62702-A787 SOT 23 °- ^ ^ 1-ÍHA07002 BAT 18-04
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Q62702-A787
HA07002
Q62702-A938
EHA0700S
Q62702-A940
Q62702-A942
EKA07004
EHA070M
235b05
G12034Ã
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DIODE marking ED
Abstract: marking ya 71A marking GI 536 POWER 15X15 SC802-09 sc802
Text: SC802-09 1 .OA • Outline Drawing SCHOTTKY BARRIER DIODE I Features • • • • Surface mount device Lo w V f Super high speed switching High reliability by planer design -CATHOOE MARKING -SYMBOL I ED 1 14 H Applications - LOT NO.
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SC802-09
500ns,
110oC,
DIODE marking ED
marking ya
71A marking
GI 536 POWER
15X15
SC802-09
sc802
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Untitled
Abstract: No abstract text available
Text: SIEMENS BB 619C Silicon Variable Capacitance Diode • For tuning of extended frequency band in V H F TV/ VTR tuners Type Marking Ordering Code Pin Configuration Package BB619C yellow S 1 =C SOD-123 Q62702-B683 2 =A Maximum Ratings Parameter Symbol Values
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BB619C
OD-123
Q62702-B683
fl235hOS
j2/Cj25
/CT28
023Sfc
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Untitled
Abstract: No abstract text available
Text: In te rn a tio n a l pd-9.i 6i 7b IRF3315S/L 1QR R e c t i f i e r _PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRF3315S Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching
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IRF3315S)
IRF3315L)
IRF3315S/L
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Untitled
Abstract: No abstract text available
Text: POWEREX I NC 1SE D • 7BTMLB1 0 D G 3S 5 3 2 ■ T - 2 .5 ' ^ 2 3 r<M/EREX C C 42 C N 47 Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 SCR/Diode Center Tap
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BP107,
Amperes/400-1400
MAX/10
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Untitled
Abstract: No abstract text available
Text: ?W O ?b Ordering number:EN1281C 0 0 1 S 0 S S 0 7b LB1268 N0.1281C SA \Y O i Monolithic Digital IC 3-Channel, High-Current, Low-Saturation Driver Array Features and Functions • 3-channel magnet driver • High current 2.0A max. and low saturation voltage (1,5V)
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1281C
LB1268
DIP20H
DIP16F
MFP30S
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gy-80
Abstract: 2SD1154 bf 871 2SD1149 2SD1151 marking hkk ELF AMPLIFIER 35654
Text: PANASONIC INDL/ELEK-CSEHI} 7BC D | □□□C]5D4 S f ï f ^ T 2SD1149 2SD1149 '> ij 3 > N P N N P N Epitaxial Planar T JU’/ U — i f i J i & i i i U f f l / A F Am plifier • 4$ Î S /F e a tu re s
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2SD1149
gy-80
2SD1154
bf 871
2SD1149
2SD1151
marking hkk
ELF AMPLIFIER
35654
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MIL-STD-750 METHOD 2036
Abstract: HP 5082-0180 5082-0833 hp 5082-0151 hp 5082 step recovery 5082-0112 5082-0153 5082-0840 hp 5082 0180 5082-0180
Text: HEWLETT-PACKARD/ CHPNTS LIE ]> • 4447504 GQG'ì7S2 7b2 Whaì HEWLETT iL'ttà PACKARD Glass Packaged Step Recovery Diodes Stài13114 Technical Data 5082-0153 5082-0180 5082-0833 5082-0840 Features • Optimized for Both Low and High Order Multiplier Designs from UHF through
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MIL-S-19500.
MIL-STD-750 METHOD 2036
HP 5082-0180
5082-0833
hp 5082-0151
hp 5082 step recovery
5082-0112
5082-0153
5082-0840
hp 5082 0180
5082-0180
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS19 BAS20 BAS21 tbS3^31 002M270 7bb • APX N A HER PHILIPS/DISCRETE b7E ]> y v SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon epitaxial high-speed diodes in a microminiature plastic envelope. They are intended for switching and general purposes. QUICK REFERENCE DATA
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BAS19
BAS20
BAS21
002M270
bbS3R31
002427b
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Untitled
Abstract: No abstract text available
Text: u im TECHNOLOGY LT13 0 7/LT13 0 7B Single Cell Micropower 600kHz PWM DC/DC Converters FCflTURCS D C S C R IP T IO n • Uses Small Ceramic Capacitors ■ 50jjA Quiescent Current LT1307 ■ 1m A Quiescent Current (LT1307B) ■ Operates with V|N as Low as 1V
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7/LT13
600kHz
50jjA
LT1307)
LT1307B)
295mV
500mA
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Schottky barrier double diodes BAT54W series PINNING FEATURES • Low forward voltage BAT54 PIN • Guard ring protected • Very small SMD package. APPLICATIONS W AW CW SW 1 a 2 n.c. ki k2 ai a2 ai k2 3 k i ►?)
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BAT54W
BAT54
BAT54AW
OT323
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smd k1p
Abstract: smd diode k2 smd diode marking code a2 smd diode code l4 smd diode marking HA MBC870 10j smd diode A2 diode smd A2 DIODE SMD CODE MARKING k1p diode
Text: Product specification Philips Semiconductors Schottky barrier double diodes BAT54W series PINNING FEATUR ES • Low forward voltage BAT54 PIN • Guard ring protected • Very small SMD package. 1 2 APPLICATIONS 3 W CW AW a n.c. k SW ai ai k2 a2 ai, a2 ki, k2 ki, a2
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BAT54W
OT323
BAT54AW
BAT54CW
BAT54SW
BAT54
MBC870
OT323)
smd k1p
smd diode k2
smd diode marking code a2
smd diode code l4
smd diode marking HA
MBC870
10j smd diode
A2 diode smd
A2 DIODE SMD CODE MARKING
k1p diode
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M24 sot23
Abstract: M05 SOT-23 marking code M05 marking code SM diode M15 SOT-23 marking code m05 sot23 6
Text: SEMTECH Today*« R a u ik i.1 Revised - February 16, 1999 S M 05 thru 300W Surface Mount TVS Diode TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SM series of transient voltage suppressors TVS are designed to protect components which are
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TEL805-498-2111
OT-23
CA91320
M24 sot23
M05 SOT-23
marking code M05
marking code SM diode
M15 SOT-23
marking code m05 sot23 6
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