1N4148WS
Abstract: No abstract text available
Text: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C
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1N4148WS=
1N4148WS
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A6 sot-23
Abstract: BAS16 sot-23 cd 5411 marking 855 sot 353 MARKING 358 sot-23 BAS16
Text: BAS16 SOT 23 High Speed Switching Diodes Feature: • Silicon Planar Epitaxial High-Speed Diode. Package Outline Details Marking BAS16 = A6 Pin configuration 1 = Anode 2 = NC 3 = Cathode Dimensions : Millimetres Absolute Maximum Ratings Limiting values Symbol
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BAS16
A6 sot-23
BAS16 sot-23
cd 5411
marking 855 sot 353
MARKING 358 sot-23
BAS16
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1N7039CCT1
Abstract: 1n703 12CGQ150 12CLQ150 16CYQ150C 1N7039CCU1 1n7039 1n7047
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 January 2011. INCH-POUND MIL-PRF-19500/737A w/AMENDMENT 1 1 October 2010 SUPERSEDING MIL-PRF-19500/737A 5 December 2007 PERFORMANCE SPECIFICATION SHEET
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MIL-PRF-19500/737A
1N7039CCT1,
1N7039CCU1
1N7047CCT3,
MIL-PRF-19500.
1N7039CCT1
1n703
12CGQ150
12CLQ150
16CYQ150C
1n7039
1n7047
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MARKING 358 sot-23
Abstract: diode schottky sot-23 marking l44 sot-23 marking 34 diode SCHOTTKY diode marking 45 schottky diode bat54 l44 sot-23 Marking L43 BAT54 BAT54A BAT54C
Text: BAT54- Series Features: • • • • Fast switching speed. Surface mount package ideally suited for automatic insertion. For general purpose switching applications. High conductance. SOT-23 Dimensions : Inches Millimetres BAT54 Marking: LV3 BAT54A Marking: B6
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BAT54-
OT-23
BAT54
BAT54A
BAT54C
BAT54S
OT-23,
MIIL-STD-202,
30racy
MARKING 358 sot-23
diode schottky sot-23
marking l44 sot-23
marking 34 diode SCHOTTKY
diode marking 45
schottky diode bat54 l44
sot-23 Marking L43
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schottky diode marking A7
Abstract: diode ba 241 marking A7 diode schottky ba 662 diode ba 204 BAV70 ON MARKING 358 sot-23 Diode bav99 case MARKING A1 diode bav70
Text: BA- Series Features: • • • • Fast switching speed. Surface mount package ideally suited for automatic insertion. For general purpose switching applications. High conductance. SOT-23 Dimensions : Inches Millimetres BAW56 Marking: A1 BAV99 Marking: A7
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OT-23
BAW56
BAV99
BAV70
OT-23,
MIIL-STD-202,
BAW56:
BAV70:
BAV99:
BAW56/BAV70/BAV99
schottky diode marking A7
diode ba 241
marking A7 diode schottky
ba 662
diode ba 204
BAV70 ON
MARKING 358 sot-23
Diode bav99
case MARKING A1
diode bav70
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226 capacitor SMT
Abstract: H737
Text: HMC737LP4 / 737LP4E v00.1108 MMIC VCO w/ HALF FREQUENCY OUTPUT 14.9 - 15.5 GHz Typical Applications Features The HMC737LP4 E is ideal for: Dual Output: Fo = 14.9 - 15.5 GHz Fo/2 = 7.45 - 7.75 GHz • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls
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HMC737LP4
737LP4E
16mm2
226 capacitor SMT
H737
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H737
Abstract: No abstract text available
Text: HMC737LP4 / 737LP4E v01.0209 MMIC VCO w/ HALF FREQUENCY OUTPUT 14.9 - 15.5 GHz Typical Applications Features The HMC737LP4 E is ideal for: Dual Output: Fo = 14.9 - 15.5 GHz Fo/2 = 7.45 - 7.75 GHz • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls
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HMC737LP4
737LP4E
16mm2
H737
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361 Zener diode marking
Abstract: marking code zener diode wl Fr 9888 Zener diode marking 361 zener sod-323 marking code 06 BZT52C3V3S BZT52C3V6S BZT52C4V3S BZT52C4V7S BZT52C5V6S
Text: Diode, Zener Features: • • • • SOD-323 Planar Die Construction. Ultra-Small Surface Mount Package. Ideally suited for Automated Assembly Processes. Also Available in Lead Free Version. Dimensions Minimum Maximum A 2.30 2.70 B 1.60 1.80 C 1.20 1.40
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OD-323
OD-323,
J-STD-020A.
MIL-STD-202,
361 Zener diode marking
marking code zener diode wl
Fr 9888
Zener diode marking 361
zener sod-323 marking code 06
BZT52C3V3S
BZT52C3V6S
BZT52C4V3S
BZT52C4V7S
BZT52C5V6S
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Untitled
Abstract: No abstract text available
Text: HMC737LP4 / 737LP4E v01.0209 MMIC VCO w/ HALF FREQUENCY OUTPUT 14.9 - 15.5 GHz Typical Applications Features The HMC737LP4 E is ideal for: Dual Output: Fo = 14.9 - 15.5 GHz Fo/2 = 7.45 - 7.75 GHz • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls
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HMC737LP4
737LP4E
16mm2
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selector guide 74HC 74HCT FAMILY
Abstract: 74HC03D
Text: INTEGRATED CIRCUITS DATA SHEET For a complete data sheet, please also download: • The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications • The IC06 74HC/HCT/HCU/HCMOS Logic Package Information • The IC06 74HC/HCT/HCU/HCMOS Logic Package Outlines 74HC/HCT03
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74HC/HCT/HCU/HCMOS
74HC/HCT03
01-Nov-97)
selector guide 74HC 74HCT FAMILY
74HC03D
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C3D04060E
Abstract: CREE C3D04060
Text: C3D04060E–Silicon Carbide Schottky Diode Z-REC RECTIFIER VRRM = 600 V IF =4A TC < 160 °C Qc Features • • • • • • • • = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D04060E
600-Volt
O-252-2
C3D04060E
C3D04060
CREE C3D04060
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C4D02120E
Abstract: c4d02120
Text: C4D02120E–Silicon Carbide Schottky Diode Z-Rec Rectifier Features • • • • • • IF, TC<135˚C = 6.9 A Qc = 15 nC 1200-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior
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C4D02120E
1200-Volt
O-252-2
C4D02120E
c4d02120
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c4d02120
Abstract: C4D02120E CSD04060 D0212
Text: C4D02120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF AVG = 2 A Qc Features • • • • • • Package 1200-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation
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C4D02120E
1200-Volt
O-252-2
C4D02120E
C4D02ody
c4d02120
CSD04060
D0212
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Untitled
Abstract: No abstract text available
Text: FDP6670S/FDB6670S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6670S/FDB6670S
FDP6670S
FDP6670S/FDB6670S
FDP6670A/FDB6670A
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rectifier diode 3A
Abstract: No abstract text available
Text: C3D03060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 3 A Qc = 6.7 nC Features Package • • • • • • • • TO-252-2 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D03060E
O-252-2
600-Volt
rectifier diode 3A
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marking D03
Abstract: No abstract text available
Text: C3D04060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 4 A Qc = 8.5 nC Features • • • • • • • • Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C3D04060E
600-Volt
O-252-2
C3D04060E
marking D03
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Untitled
Abstract: No abstract text available
Text: FDP6670S/FDB6670S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6670S/FDB6670S
FDP6670S
FDP6670S/FDB6670S
FDP6670A/FDB6670A
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fdb fairchild
Abstract: FDP6670S FDB6670S
Text: FDP6670S/FDB6670S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6670S/FDB6670S
FDP6670S
FDP6670S/FDB6670S
FDP6670A/FDB6670A
fdb fairchild
FDB6670S
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Untitled
Abstract: No abstract text available
Text: C4D08120E–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM IF,TC<135˚C = 12 A Qc Features • • • • • = 49 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior
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C4D08120E
1200-Volt
O-252-2
C4D08120E
C4D08120
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Untitled
Abstract: No abstract text available
Text: C3D03060E VRRM = Silicon Carbide Schottky Diode 600 V IF TC=135˚C = 5.5 A Z-Rec Rectifier Qc Features Package • • • • • • • • TO-252-2 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D03060E
O-252-2
600-Volt
C3D03060E
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c4d10120
Abstract: C4D10120E TO-252-2
Text: C4D10120E–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF, = 16 A TC<135˚C Qc Features • • • • • = 66 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior
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C4D10120E
1200-Volt
O-252-2
C4D10120E
C4D10120
c4d10120
TO-252-2
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CSD04060
Abstract: C4D08120
Text: C4D08120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 7.5 A Qc Features • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF
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C4D08120E
1200-Volt
O-252-2
C4D08120E
C4D08120
CSD04060
C4D08120
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c4d10120
Abstract: CSD04060
Text: C4D10120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF AVG = 10 A Qc Features • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior
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C4D10120E
1200-Volt
O-252-2
C4D10120E
C4D10120
c4d10120
CSD04060
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diodes BAS 125 . • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OCR Scan
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PDF
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Q62702-D1316
Q62702-D1321
OT-23
EHM7002
EHA07005
Q62702-D1322
EHA0700*
Q62702-D1323
CHA07006
flS35fci05
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