marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 MMBD301 SCHOTTKY BARRIER DIODE FEATURES Small Surface Mounting Type High Reliability MARKING: 4T MAXIMUM RATINGS Ta=25℃ unless otherwise noted Symbol
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OT-23
OT-23
MMBD301
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4T sot 23
Abstract: diode marking 4t marking GD sot-23
Text: MMBD301 Schottky Barrier Diode SOT-23 Features Surface mount package ideally suited for automatic insertion. Applications Sourced from process GD. Ordering Information Dimensions in inches and millimeters Type No. Marking MMBD301 Package Code 4T SOT-23
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MMBD301
OT-23
MMBD301
4T sot 23
diode marking 4t
marking GD sot-23
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powerex R9G0 2100
Abstract: R9GO 21-XX
Text: R9G0_21XX GENERAL PURPOSE RECTIFIER DIODE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 2100 Amperes 2200 Volts F DIA. TYP. G DEEP TYP. MARKING CATHODE Powerex General Purpose Rectifier Diodes are designed with high locking voltage
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Untitled
Abstract: No abstract text available
Text: R9G0_21XX GENERAL PURPOSE RECTIFIER DIODE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 2100 Amperes 2200 Volts F DIA. TYP. G DEEP TYP. MARKING CATHODE Powerex General Purpose Rectifier Diodes are designed with high locking voltage
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R7S02415
Abstract: R7S02415XX diode Vfm 419e-02
Text: R7S0_15XX GENERAL PURPOSE RECTIFIER DIODE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 1500 Amperes 2400 Volts F DIA. TYP. G DEEP TYP. MARKING CATHODE Powerex General Purpose Rectifier Diodes are designed with high locking voltage
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Untitled
Abstract: No abstract text available
Text: RDS8_80XX GENERAL PURPOSE RECTIFIER DIODE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 8000 Amperes 2500 Volts F DIA. TYP. G DEEP TYP. MARKING CATHODE Powerex General Purpose Rectifier Diodes are designed with high locking voltage capability and
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0E-03
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RBS 6000
Abstract: RBS 6000 -ericsson RBS 6000 POWER RATING 373E-03 RBS 200 rbs 2000 RDS82280XXOO
Text: RDS8_80XX GENERAL PURPOSE RECTIFIER DIODE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 8000 Amperes 2500 Volts F DIA. TYP. G DEEP TYP. MARKING CATHODE Powerex General Purpose Rectifier Diodes are designed with high locking voltage capability and
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0E-03
RBS 6000
RBS 6000 -ericsson
RBS 6000 POWER RATING
373E-03
RBS 200
rbs 2000
RDS82280XXOO
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rectifier d 355 n 2000
Abstract: No abstract text available
Text: RDK8_40XX GENERAL PURPOSE RECTIFIER DIODE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 4000 Amperes 6000 Volts F DIA. TYP. G DEEP TYP. CAT HOD E MARKING Powerex General Purpose Rectifier Diodes are designed with high locking voltage capability and
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diode schottky 4T
Abstract: No abstract text available
Text: CMLSH2-4T SURFACE MOUNT SILICON TRIPLE ISOLATED LOW VF SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH2-4T consists of three 3 isolated silicon Schottky diodes, manufactured in an SOT-563 surface mount package.
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OT-563
14-February
diode schottky 4T
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diode marking 4t
Abstract: diode schottky 4T 4T SOT 23 4t marking
Text: CMLSH2-4T Central TM Semiconductor Corp. SURFACE MOUNT SILICON TRIPLE ISOLATED LOW VF SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH2-4T consists of three 3 Isolated Silicon Schottky Diodes, manufactured in a PICOmini SOT-563 surface mount package. This device is designed for
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OT-563
23-April
diode marking 4t
diode schottky 4T
4T SOT 23
4t marking
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diode marking 4t
Abstract: CMLSH2-4T diode schottky 4T 4t MARKING
Text: CMLSH2-4T SURFACE MOUNT TRIPLE ISOLATED LOW VF SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH2-4T consists of three 3 Isolated Silicon Schottky Diodes, manufactured in a PICOmini SOT-563 surface
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OT-563
Resista55
20-January
diode marking 4t
CMLSH2-4T
diode schottky 4T
4t MARKING
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marking E7B
Abstract: No abstract text available
Text: SIEMENS BAW56 Silicon Switching Diode Array • For high-speed switching applications • Common anode Type Marking Ordering Code tape and reel B A W 56 A1s Q62702-A688 Pin Configuration Package1) 3 SOT-23 EHMHW Maximum Ratings per Diode Parameter Symbol
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BAW56
Q62702-A688
OT-23
02BSb05
23StOS
01S048M
235b05
marking E7B
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BAV 99W Silicon Switching Diode Array >Connected in series 1For high speed switching applications C1/A2 nr T J Type Marking Ordering Code Pin Configuration BAV 99W A7s Q62702-A1051 1=A1 2=A2 Package 3=C1/C2 SOT-323 Maximum Ratings per Diode Symbol
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Q62702-A1051
OT-323
23SL05
0235b05
D15D412
D1ED413
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DIODE T25 4 do
Abstract: bb409 DIODE T25 4 DIODE T25 DIODE 409 Q62702-B112 IR 409 H DIODE T25 4 C
Text: SIEMENS Silicon Variable Capacitance Diode BB 409 • For VHF tuners • Not for new design Type Marking Ordering Code Pin Configuration Package1 BB 409 green Q62702-B112 DO-35 DHD o - ^ -o EHA07001 Maximum Ratings Parameter Symbol
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Q62702-B112
EHA07001
DO-35
aZ35b05
0235bOS
535b05
DIODE T25 4 do
bb409
DIODE T25 4
DIODE T25
DIODE 409
Q62702-B112
IR 409 H
DIODE T25 4 C
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MARKING rkm
Abstract: No abstract text available
Text: SC016 i .OA — 'i'X —Y • Outline Drawings GENERAL USE RECTIFIER DIODE ■ Features • m m 'g & rf- sim Surface m o unt device • K ftlK tt I S tjv • Marking High reliability ’ Applications • 1 B B General purpose rectifier applications • y L—
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SC016
SC016-2
SC016-4
SC016-6
MARKING rkm
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BAT 68-03W Silicon Schottky Diode Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching Type Marking Pin Configuration Q62702-A1046 1 =A Package SOD-323 II CM BAT 68-03W K Ordering Code Maximum Ratings Parameter
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8-03W
OD-323
8-03W
Q62702-A1046
012D377
fl235bG5
12037fl
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t930
Abstract: ERA38 T151 T760
Text: ERA38 o .5A K Ü S E S k • * » ■ * » : Outline Drawings FAST RECOVERY DIODE 3.0 : Features ■15/jv I Marking Super high speed switching • f f i 'W , 5mmki vT g mmA-siffi Ultra small package. * 7 - □ —K : È Color code : White Possible for 5mm pitch automatic insertion
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ERA38
I95t/R89)
t930
T151
T760
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Untitled
Abstract: No abstract text available
Text: ERD31 1.5A : Outline Drawings FAST RECOVERY DIODE : Features • Ü /]v : Marking Large current High voltage by mesa design. DKEnfe: W • S fS H S tt f i ' j — K ?—ÿ High reliability 0 3 1 - 0 4 pi . . . . 1 -1 — : Applications • M H z* D-y !±e : 4=6]. T6;
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ERD31
5tvlZaTS30S3^
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Untitled
Abstract: No abstract text available
Text: ERA83-004<ia : Outline D raw ings SCHOTTKY BARRIER DIODE Features • ifeVF IS /K : Marking Low V F Super high speed sw itchin g. • tv— «fElîfe: Ù « ffi i -j afcfgfct e ►►►►► - ti'j—Fv-ÿ High reliability by planer design. • ' J ^ m m f
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12fl-D
500ns,
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Untitled
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PRODS 4TE D • 0302303 DGGSTSM 3 ■ SLD302WT T -m -o s SONY. 200mW High Power Laser Diode Description SLD302WT is a gain-guided, hlgh-power laser diode with a built-in TE cooler. Fine tuning of the wavelength is possible by controlling the laser chip
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SLD302WT
200mW
SLD302WT
180mW
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