FDP3672
Abstract: diode marking 41a on semiconductor marking n6
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
O-220AB
FDP3672
diode marking 41a on semiconductor
marking n6
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Untitled
Abstract: No abstract text available
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • rDS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
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MOSFET S1A
Abstract: M060 45E-2
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
O-220AB
MOSFET S1A
M060
45E-2
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fdp3672
Abstract: diode marking 41a on semiconductor 100E30
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
O-220AB
fdp3672
diode marking 41a on semiconductor
100E30
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Untitled
Abstract: No abstract text available
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
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TC143E
Abstract: T 105 micro 25E3
Text: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ V GS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP3672
FDP3672
O-220
TC143E
T 105 micro 25E3
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Untitled
Abstract: No abstract text available
Text: FDP3672 N-Channel PowerTrench MOSFET 107V, 41A, 33mΩ Features Applications • r DS ON = 26mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
O-220AB
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Untitled
Abstract: No abstract text available
Text: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP3672
O-220
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FQP45N03L
Abstract: FQP45N03
Text: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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FQP45N03L
1450pF
O-220AB
FQP45N03L
FQP45N03
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33A zener diode
Abstract: zener diode 46a
Text: SMA4728A~SMA4764A Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value
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SMA4728A
SMA4764A
1-Jul-2004
DO-214AC
33A zener diode
zener diode 46a
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10.7A
Abstract: No abstract text available
Text: FDD5353 N-Channel Power Trench MOSFET 60V, 50A, 12.3mΩ Features General Description Max rDS on = 12.3mΩ at VGS = 10V, ID = 10.7A 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has
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FDD5353
FDD5353
10.7A
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Untitled
Abstract: No abstract text available
Text: SML4728A – SMZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features Low Profile 1.33mm Max. Case Height 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference
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SML4728A
SMZ1330A
OD-123FL
OD-123FL,
MIL-STD-202,
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IEC-6000-4-2
Abstract: 5M MARKING CODE DIODE SMC
Text: NZMM7V0T4 EMI Filter with ESD Protection This device is scheduled for availability in Q4 2000. Please contact your nearest ON Semiconductor sales representative for further information. http://onsemi.com Features: • • • • • • • • • 4 x 4 mm Lead Less MLF Surface Mount Package
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IEC6000
IEC-6000-4-2
5M MARKING CODE DIODE SMC
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Solid State Relays
Abstract: gunther relay. 3700 WG A8 6D 03 Z TRIAC 20A 600V WG A5 6D 25
Text: HEATSINK DIMENSIONS WG - K3/160 Screw thread M4 x 6mm 0.16x0.24 / 10 pieces WG - K1/100 B/D Snap-on-rail 35 (1.38) 100 (3.94) B B A A B Snap-on-rail 35 (1.38) B 160 (6.3) A 20 (0.79) D C 3.0 (0.12) Snap-on-rail mounting Snap-on-rail mounting 1.5 (0.06) Counterbore for grounding
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K3/160
K2/100
Solid State Relays
gunther relay. 3700
WG A8 6D 03 Z
TRIAC 20A 600V
WG A5 6D 25
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Untitled
Abstract: No abstract text available
Text: MSQA6V1W5T2 Quad Array for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems,
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SC88A
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orient 817b
Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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DL150/D
May-2001
r14525
DLD601
orient 817b
UJT-2N2646
UJT-2N2646 PIN DIAGRAM DETAILS
L 1011 817B
CI 817b
MDA2500
UJT 2N2646
Zener Diode SOT-23 929b
2N2646 pin diagram
diode 913b
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GE Transient Voltage Suppression Manual
Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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DL150/D
May-2001
no422-3781
r14525
DL150/D
GE Transient Voltage Suppression Manual
diode 930 6V8A
2n2646 practical application circuits
UJT 2N2646
Transient Voltage Suppression Manual
Bidirectional Diode Thyristors 1.5ke 30A
Zener Diode SOD323 pdz 4 .7b
919b diode
varistor SVC 471 14
melf diode marking code
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Diode SOT-23 marking 15d
Abstract: pk 1n6 1.5KE THYRISTOR 308 f GGP DIODE 503 Power Board GDP 002 94V DIODE MARKING CODE SG 88A ZENER Diode SOT-23 marking 15D diode 1n6 1.5ke onsemi marking SK PK P6KE 200A
Text: BRD8009/D Rev. 1, Apr-2001 Transient Voltage Suppression Devices Transient Voltage Suprression Devices 04/01 BRD8009 REV 1 ON Semiconductor Transient Voltage Suppression Devices BRD8009/D Rev. 1, Apr–2001 SCILLC, 2001 Previous Edition 1999 “All Rights Reserved’’
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BRD8009/D
Apr-2001
BRD8009
r14525
DLD601
Diode SOT-23 marking 15d
pk 1n6 1.5KE
THYRISTOR 308 f
GGP DIODE 503
Power Board GDP 002 94V
DIODE MARKING CODE SG 88A
ZENER Diode SOT-23 marking 15D
diode 1n6 1.5ke
onsemi marking SK
PK P6KE 200A
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VARISTOR k275
Abstract: K95 varistor S20 K275 varistor varistor s20 k275 "Surge Arresters" pspice siemens automotive relay dc 12v S20K275 sm 323 module Siemens varistor s20k275 k275 varistor
Text: 3 Application and design examples 3.1 Switching off inductive loads The discharge of an inductor produces high voltages that endanger both the contact breaker switching transistor and the like and the inductor itself. According to equation 16 the energy stored
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3148b
Abstract: No abstract text available
Text: MBR3520 MBR3535 MBR3545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR3545 is a Motorola Preferred Device Switchmode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art
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MBR3520
MBR3535
MBR3545
MBR3545
3148b
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1N6095
Abstract: No abstract text available
Text: MOTOROLA 1N6095 1N6096 SD41 SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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1N6095
1N6096
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12v dc full wave bridge rectifier
Abstract: 5000 watt full bridge design 1N5S34
Text: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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1N5832
1N5834
1N5S34
12v dc full wave bridge rectifier
5000 watt full bridge design
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DIODE SD51
Abstract: 5817 SOD-123 bly 83 Motorola Switchmode SD51
Text: 1N6097 1N6098 SD51 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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150-C
1N6097
1N6098
DIODE SD51
5817 SOD-123
bly 83
Motorola Switchmode
SD51
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1N5825
Abstract: diode 1N5825 N5824 1n6823 1N5824 1N5823 marking Bq sot23 1N5824 ON
Text: 1N5823,1N5824 1N5825 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5823 and 1N5825 are Motorola Preformi Devices Designer’s Data Sheet SCHOTTKY BARRIER RECTIFIERS Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.
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1N5823
1N5824
1N5825
1N5825
diode 1N5825
N5824
1n6823
marking Bq sot23
1N5824 ON
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