marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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RB461F
Abstract: 3B marking sot323 Diode Marking 3B Schottky Diode SOT Marking 3B sot323 marking K MARKING K SOT323
Text: BL Galaxy Electrical Production specification Schottky Barrier Diode RB461F FEATURES Pb z Small total capacitance. z Power dissipation. PD=150mW Lead-free APPLICATIONS z For general purpose applications. ORDERING INFORMATION Type No. SOT-323 Marking RB461F
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RB461F
150mW)
OT-323
700mA
BL/SSSKF025
RB461F
3B marking sot323
Diode Marking 3B
Schottky Diode SOT Marking 3B
sot323 marking K
MARKING K SOT323
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marking 3b
Abstract: marking "3B"
Text: RB461F Schottky Diode SOT-323 1. ANODE 2. N,C 3. CATHODE Features Low-power rectification For switching power supply Ultra low VF. VF=0.45V Typ. at 0.7A - IF=0.7A guaranteed despite the size. Dimensions in inches and (millimeters) + MARKING: 3B•
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RB461F
OT-323
700mA
marking 3b
marking "3B"
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RBO08-40G
Abstract: RBO08-40T RBO08-40M VF13 aluminium plane heatsink
Text: RBO08-40G/M/T REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.
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RBO08-40G/M/T
RBO08-40G
PowerSO-10TM
RBO08-40M
RBO08-40G
RBO08-40T
RBO08-40M
VF13
aluminium plane heatsink
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diode ir31
Abstract: TRANSIL RBO08-40G transil diode equivalent transistor marking code SGs IR31 RBO08-40M RBO08-40T VF13
Text: RBO08-40G/M/T REVERSEDBATTERYAND Application Specific Discretes A.S.D.TM OVERVOLTAGEPROTECTIONCIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.
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RBO08-40G/M/T
RBO08-40G
PowerSO-10TM
RBO08-40M
diode ir31
TRANSIL
RBO08-40G
transil diode equivalent
transistor marking code SGs
IR31
RBO08-40M
RBO08-40T
VF13
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ice3b1565j
Abstract: 3b0365j ICE3BR2065 ICE3B0365J 3b0365 3b0565 ICE3BR2065J ice*3b0365j 3B1565 ICE3B2065J
Text: Da ta s h e et , V e rs io n 2. 6 , 4 J u l 2 0 1 1 I CE 3B0 365 J I CE 3B0 565 J I CE 3B1 565 J I CE 3B2 065 J O ff - L in e S M P S Cu r r e n t M o d e C o n tr o lle r wit h in t e g r a te d 6 5 0 V C o o lM OS ® a n d S ta r tu p c e ll fr e q u e n c y j itt e r M o d e in DI P- 8
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ICE3Bxx65J
ICE3B2065J
ice3b1565j
3b0365j
ICE3BR2065
ICE3B0365J
3b0365
3b0565
ICE3BR2065J
ice*3b0365j
3B1565
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marking ya
Abstract: 3tb 40 15X15 SC802-04 marking 6Ct marking eb sc802
Text: SC802-04 1 .OA • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features I Marking • Surface mount device • Lo w V f -CATHODE MARKING - SYMBOL • Super high speed switching • High reliability by planer design /I ■ EB 1 141 - MONTH
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SC802-04
500ns,
marking ya
3tb 40
15X15
SC802-04
marking 6Ct
marking eb
sc802
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode Array BGX 50 A • Bridge configuration • High-speed switch diode chip Type Marking Ordering Code tape and reel BGX 50 A U1s Q62702-G38 Pin Configuration Package1) SOT-143 4 OU00007 Maximum Ratings per Diode Parameter Symbol
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Q62702-G38
OT-143
OU00007
fl235bD5
fi235bD5
0235bD5
Q122235
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode Array BAV 70 • For high-speed switching • Common cathode Type Marking Ordering Code tape and reel B A V 70 A4s Q68000-A6622 Pin Configuration Package1) 3 ° SOT-23 Ol Î - K 1 EHA07004 Maximum Ratings per Diode Valúes
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Q68000-A6622
OT-23
EHA07004
OMOM23
S235bOS
23SLDS
G12D3T3
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Untitled
Abstract: No abstract text available
Text: SIEMENS BB 837 Silicon Tuning Diode Preliminary data • Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units • High capacitance ratio Type Marking Ordering Code Pin Configuration Package BB 837 M Q62702-B0904 1=C SOD-323
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Q62702-B0904
OD-323
fl23Sfc
Mar-27-1998
CT1/CT28
235bGS
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Untitled
Abstract: No abstract text available
Text: SC802-04 1 .OA SCHOTTKY BARRIER DIODE Outline Drawing I 3' / j r - f x a % tO C\J £ L l3 5 iM 12 MM. 1 4 iz t02 135 04 _ >04 5.1-ai • Features I Marking • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design
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SC802-04
0DG3b37
0G03b3Ã
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BB620
Abstract: diode marking code 77 marking 77 diode "Variable Capacitance Diode" marking 2x 2X marking
Text: I I DEVELOPMENT DATA • b b S 3 ^ 2 4 0 0 7 4 E b cl 3bD ■ SIC3 BB620 T h is d a t a s h e e t c o n t a in s a d v a n c e i n f o r m a t io n a n d s p e c if ic a t io n s a re s u b je c t t o c h a n g e w it h o u t n o t ic e . NAPC/PHILIPS SEMICOND
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0074Ebcl
BB620
BB620
OD123
diode marking code 77
marking 77 diode
"Variable Capacitance Diode"
marking 2x
2X marking
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L3103L
Abstract: 0T1S IRF4905L
Text: PD-9.1478A International 3BR Rectifier IRF4905S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology S urface M ount IRF4905S Low -profile through-hole (IRF4905L) 175 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated
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IRF4905S)
IRF4905L)
IRF4905S/L
L3103L
0T1S
IRF4905L
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GS 069 LF
Abstract: No abstract text available
Text: PD-9.913A International 3BR Rectifier IRF9Z34S/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z34S • Low-profile through-hole (IRF9Z34L) • 175°C Operating Temperature • Fast Switching • P- Channel • Fully Avalanche Rated
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IRF9Z34S)
IRF9Z34L)
GS 069 LF
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Untitled
Abstract: No abstract text available
Text: I , I P D -9.131 OB International 3BR Rectifier IRF3710S/L p r e l im in a r y H E X F E T ^ P ow er M O S F E T • • • • • • Advanced Process Technology Surface Mount IRF3710S Low-profile through-hole (IRF3710L) 175°C Operating Temperature Fast Switching
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IRF3710S/L
IRF3710S)
IRF3710L)
4A554S2
0027TÃ
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Untitled
Abstract: No abstract text available
Text: P D -9.911 A International IRF9Z14S/L 3BR Rectifier HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z14S • Low-profile through-hole (IRF9Z14L) • 175°C Operating Temperature • Fast Switching • P- Channel • Fully Avalanche Rated
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IRF9Z14S)
IRF9Z14L)
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DIODE CQ 618
Abstract: MOSFET IRL AN-994 IRL1104 IRL1104L IRL1104S marking dmx diode
Text: International 3BR Rectifier • • • • • • • PD'91840 IR L1104S /L PRELIMINARy HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL1104S Low-profile through-hole (IRL1104L) 175 °C Operating Temperature Fast Switching
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IRL1104S)
IRL1104L)
DIODE CQ 618
MOSFET IRL
AN-994
IRL1104
IRL1104L
IRL1104S
marking dmx diode
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Untitled
Abstract: No abstract text available
Text: International jag Rectifier • uêSS^SS 0 0 1 4 7 1 b 3bT B I N R PD-9.3091 I P p e o n INTERNATIONAL R ECTIFIER bSE HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements
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IRF630
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Untitled
Abstract: No abstract text available
Text: bSE ] International k Rectifier 4655452 0014bti2 3bcl H I N R PD-9.897 IRF530S INTERNATIONAL RECTIFIER HEXFET® Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature
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0014bti2
IRF530S
SMD-220
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IRFZ48
Abstract: irfz48 n mosfet
Text: 4ÔS54S2 Q D l S a m International k? r Rectifier 3b5 PD-9.758 IIN R IRFZ48 INTERNATIONAL RECTIFIER HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance 175°C Operating Temperature Fast Switching
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S54S2
IRFZ48
O-220
4A5545E
IRFZ48
irfz48 n mosfet
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irfip448
Abstract: No abstract text available
Text: In t e r n a tio n a l IiorI R e c t i f ie r • 4055452 001534^ 3bG m i m p°-9-750 I R F I P 448 H EXFET Power M O SFET • • • • • • • INTERNATION AL R E C T I F I E R Isolated Package DC Package lsolation= 4.0KVDC AC Package lsolation= 2.0KVRMS ©
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O-247
irfip448
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