Untitled
Abstract: No abstract text available
Text: PD - 97490A IRFH5210PbF HEXFET Power MOSFET VDS 100 V RDS on max 14.9 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 55 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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7490A
IRFH5210PbF
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PQFN footprint
Abstract: diode marking 33a on semiconductor IRFH5210TR2PBF marking 33a on semiconductor AN-1154 IRFH5210TRPBF IRFH5210
Text: PD - 97490 IRFH5210PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 100 V 14.9 mΩ Qg (typical) RG (typical) 39 nC 1.8 Ω ID 55 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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IRFH5210PbF
IRFH5210TRPBF
IRFH5210TR2PBF
PQFN footprint
diode marking 33a on semiconductor
IRFH5210TR2PBF
marking 33a on semiconductor
AN-1154
IRFH5210TRPBF
IRFH5210
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IRFP250 equivalent
Abstract: 035H 30ETH06 IRFP250 IRFPE30 IRGP50B60PD1 irgp50B60
Text: PD - 94625 IRGP50B60PD1 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies
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IRGP50B60PD1
IRFPE30
O-247AC
IRFP250 equivalent
035H
30ETH06
IRFP250
IRFPE30
IRGP50B60PD1
irgp50B60
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D47F
Abstract: IRFH5210
Text: PD - 97490A IRFH5210PbF HEXFET Power MOSFET VDS 100 V RDS on max 14.9 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 55 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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7490A
IRFH5210PbF
D47F
IRFH5210
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code marking AFAA
Abstract: AFAA
Text: PD - 94625A IRGP50B60PD1 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies
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4625A
IRGP50B60PD1
O-247AC
IRFPE30
IRFPE30
O-247AC
code marking AFAA
AFAA
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Untitled
Abstract: No abstract text available
Text: IRFH5210PbF HEXFET Power MOSFET VDS 100 V RDS on max 14.9 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 55 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications
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IRFH5210PbF
IRFH5210TRP.
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Untitled
Abstract: No abstract text available
Text: IRFR3710Z IRFU3710Z Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 100V RDS on = 18mΩ G ID = 42A S Description Specifically designed for Automotive applications, thi
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IRFR3710Z
IRFU3710Z
AN-994.
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U3710
Abstract: IRFR3710Z IRFU3710Z
Text: PD - 94740 IRFR3710Z IRFU3710Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 18mΩ
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IRFR3710Z
IRFU3710Z
AN-994.
U3710
IRFR3710Z
IRFU3710Z
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP70T03AGH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Fast Switching Characteristics Low Gate Charge G RoHS-compliant, halogen-free 30V R DS ON 9mΩ ID 60A S Description G Advanced Power MOSFETs from APEC provide the designer with the best
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AP70T03AGH/J-HF-3
O-252
AP70T03AGH-HF-3
O-252
O-251
AP70T03AGJ-HF-3)
O-251
AP70T03A
70T03AGJ
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200V 200A mosfet
Abstract: IRGP50B60PD1PBF 200A 600V FET diode marking 33A 30ETH06 MOSFET Parameters 33a marking
Text: SMPS IGBT PD - 95330A IRGP50B60PD1PbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies
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5330A
IRGP50B60PD1PbF
O-247AC
200V 200A mosfet
IRGP50B60PD1PBF
200A 600V FET
diode marking 33A
30ETH06
MOSFET Parameters
33a marking
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Untitled
Abstract: No abstract text available
Text: PD - 95513A IRFR3710ZPbF IRFU3710ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V
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5513A
IRFR3710ZPbF
IRFU3710ZPbF
AN-994.
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50b60pd
Abstract: 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER
Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET
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6306A
AUIRGP50B60PD1
AUIRGP50B60PD1E
50b60pd
50B60PD1
50B60PD1E
AUIRGP50B60
AUIRGP50B60PD1
p50b60pd1
50b60
AUIRGP50B60PD1E
200V AUTOMOTIVE MOSFET
irfp250 DRIVER
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U3710
Abstract: IRFR3710Z IRFU3710Z IRFR3710
Text: PD - 95513A IRFR3710ZPbF IRFU3710ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V
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5513A
IRFR3710ZPbF
IRFU3710ZPbF
AN-994.
U3710
IRFR3710Z
IRFU3710Z
IRFR3710
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A6T Diode
Abstract: diode A6t Diode GP 641 a6t gd IRFR3710ZPBF a6t 69 marking a6t IRFU3710Z
Text: PD - 95513C AUTOMOTIVE MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Multiple Package Options Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF
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95513C
IRFR3710ZPbF
IRFU3710ZPbF
IRFU3710Z-701PbF
AN-994.
IRFR/U3710Z
A6T Diode
diode A6t
Diode GP 641
a6t gd
IRFR3710ZPBF
a6t 69
marking a6t
IRFU3710Z
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50B60PD1
Abstract: P50B60 p50b60pd1
Text: AUIRGP50B60PD1 AUIRGP50B60PD1-E AUTOMOTIVE GRADE WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET Parameters
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AUIRGP50B60PD1
AUIRGP50B60PD1-E
50B60PD1
P50B60
p50b60pd1
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Untitled
Abstract: No abstract text available
Text: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET
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6306A
AUIRGP50B60PD1
AUIRGP50B60PD1E
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Untitled
Abstract: No abstract text available
Text: PD - 94740A IRFR3710Z IRFU3710Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 18mΩ
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4740A
IRFR3710Z
IRFU3710Z
AN-994.
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IRFR3710Z
Abstract: IRFU3710Z
Text: PD - 94740A IRFR3710Z IRFU3710Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 18mΩ
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4740A
IRFR3710Z
IRFU3710Z
AN-994.
IRFR3710Z
IRFU3710Z
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FDP33N25
Abstract: No abstract text available
Text: UniFET FDP33N25 TM 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 36.8 nC)
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FDP33N25
O-220
FDP33N25
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70t03g
Abstract: 70T03GJ 70t03gh 70T03 70t03gh mosfet AP70T03GH
Text: Advanced Power Electronics Corp. AP70T03GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Fast Switching Characteristics Low Gate Charge G RoHS-compliant, halogen-free 30V R DS ON 9mΩ ID 60A S Description D (tab) G Advanced Power MOSFETs from APEC provide the designer with the best
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AP70T03GH/J-HF-3
O-252
AP70T03GH-HF-3
O-252
O-251
AP70T03GJ-HF-3)
O-251
AP70T03
70T03GJ
70t03g
70T03GJ
70t03gh
70T03
70t03gh mosfet
AP70T03GH
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diode marking 33a on semiconductor
Abstract: marking 33a on semiconductor
Text: FDA33N25 N-Channel UniFETTM MOSFET 250 V, 33 A, 940 m Features Description • RDS on = 880 m (Typ.) @ VGS = 10 V, ID = 16.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDA33N25
FDA33N25
diode marking 33a on semiconductor
marking 33a on semiconductor
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IRF P CHANNEL MOSFET
Abstract: IRF P CHANNEL MOSFET 100v IRFR3710Z IRFU3710Z
Text: PD - 95513A IRFR3710ZPbF IRFU3710ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V
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5513A
IRFR3710ZPbF
IRFU3710ZPbF
AN-994.
IRF P CHANNEL MOSFET
IRF P CHANNEL MOSFET 100v
IRFR3710Z
IRFU3710Z
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mosfet 10a 600v
Abstract: td 1410 IRGP50B60PD 600V 25A Ultrafast Diode irfp250 DRIVER P channel 50A IGBT 30ETH06 IRFP250 50AIF
Text: PD - 94624B IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies
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94624B
IRGP50B60PD
O-247AC
mosfet 10a 600v
td 1410
IRGP50B60PD
600V 25A Ultrafast Diode
irfp250 DRIVER
P channel 50A IGBT
30ETH06
IRFP250
50AIF
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Untitled
Abstract: No abstract text available
Text: PD - 94624B IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies
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94624B
IRGP50B60PD
O-247AC
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