IRFH5207
Abstract: N-Channel 40V MOSFET
Text: PD -96298A IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS on max 9.6 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 71 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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-96298A
IRFH5207PbF
095mH,
IRFH5207
N-Channel 40V MOSFET
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marking 43a
Abstract: marking code 43a IRFH5207TR2PBF IRFH5207TRPBF AN-1154 IRFH5207
Text: PD -96298 IRFH5207PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 75 V 9.6 mΩ Qg (typical) RG (typical) 39 nC 1.7 Ω ID 71 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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IRFH5207PbF
IRFH5207TRPBF
IRFH5207TR2PBF
095mH,
marking 43a
marking code 43a
IRFH5207TR2PBF
IRFH5207TRPBF
AN-1154
IRFH5207
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Untitled
Abstract: No abstract text available
Text: PD -96298A IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS on max 9.6 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 71 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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-96298A
IRFH5207PbF
095mH,
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Untitled
Abstract: No abstract text available
Text: IRFH5207PbF HEXFET Power MOSFET VDS 75 V RDS on max 9.6 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 71 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications
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IRFH5207PbF
IRFH5207TRPbF
095mH,
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FDPF10N50FT
Abstract: fdpf10n50
Text: FDPF10N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 9 A, 850 m Features Description • RDS on = 710 m (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDPF10N50FT
FDPF10N50FT
100nsec
200nsec
fdpf10n50
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Untitled
Abstract: No abstract text available
Text: FDPF10N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 9 A, 850 m Features Description • RDS on = 710 m (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDPF10N50FT
100nsec
200nsec
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MIXD50W650TED
Abstract: No abstract text available
Text: MIXD50W650TED Six-Pack Trench XPT IGBT VCES = 650 V IC25 = 71 A VCE sat typ. = 1.55 V Part name (Marking on product) MIXD50W650TED 17 1 5 9 2 6 10 18 3 4 23, 24 21, 22 19, 20 E72873 Pin configuration see outlines. iv NTC e 15, 16 25, 26 7 11 8 12 13, 14 a
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MIXD50W650TED
E72873
MIXD50W650TED
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marking code JD SMD
Abstract: smd marking JD mmbd715 smd marking code 3D MMBD706W smd diode je smd marking code je MMBD717W MMBD715W SCHOTTKY MARKING cd S0D-323
Text: Formosa MS SMD Schottky Barrier Diode MMBD706W / 715W / 717W List List. 1 Package outline. 2
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MMBD706W
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
1000hrs.
METHOD-1038
marking code JD SMD
smd marking JD
mmbd715
smd marking code 3D
smd diode je
smd marking code je
MMBD717W
MMBD715W
SCHOTTKY MARKING cd S0D-323
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IRLR014N
Abstract: IRLR024N IRLU024N AN-994 IRFR120 IRFU120
Text: 2002-03-06 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-186-15 IRLR014N HEXFET D-Pak PD- 94350 IRLR/U014N HEXFET Power MOSFET Logic-Level Gate Drive Surface Mount IRLR024N
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IRLR014N
IRLR/U014N
IRLR024N)
IRLU024N)
EIA-481
EIA-541.
EIA-481.
IRLR024N
IRLU024N
AN-994
IRFR120
IRFU120
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B0540W
Abstract: B0520LW B0520W B0530W
Text: B0520LW/B0530W/B0540W SCHOTTKY DIODE SOD-123 1.80 .071 1.65(.065) 1.40(.055) 1.55(.061) 3.86(0.152) 3.56(0.145) 2.84(0.112) 3.9(0.154) 2.54(0.100) 3.7(0.146) FEATURES 2.7(0.106) 2.6(0.102) .71(0.028) 0.6(.023) .50(0.020) 0.5(.020) .15(.006) MAX Low forward voltage drop
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B0520LW/B0530W/B0540W
OD-123
MIL-STD-750,
B0520L
B0520LWE/B0530W/B0540W
300us
B0540W
B0530W
B0520LW
B0540W
B0520LW
B0520W
B0530W
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AN-994
Abstract: IRF3704 IRF3704L IRF3704S IRF3707 IRF3707L IRF3707S
Text: 2002-02-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-146-89 IRF3707 HEXFET TO-220 PD - 93937A IRF3707 IRF3707S IRF3707L SMPS MOSFET Applications l High Frequency DC-DC Isolated
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IRF3707
O-220
3937A
IRF3707
IRF3707S
IRF3707L
IRF3704S
O-220AB
IRF3704
O-262
AN-994
IRF3704
IRF3704L
IRF3704S
IRF3707L
IRF3707S
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71A marking
Abstract: FDB8876
Text: FDB8876 N-Channel PowerTrench MOSFET 30V, 71A, 8.5mΩ General Descriptions Features rDS ON = 8.5mΩ, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3mΩ, VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using
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FDB8876
O-263AB
71A marking
FDB8876
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Untitled
Abstract: No abstract text available
Text: FDP8876 N-Channel PowerTrench MOSFET 30V, 71A, 8.5mΩ Features General Descriptions ̈ rDS ON = 8.5mΩ, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to ̈ rDS(ON) = 10.3mΩ, VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using
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FDP8876
O-220AB
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FDP8876
Abstract: 71A marking
Text: FDP8876 N-Channel PowerTrench MOSFET 30V, 71A, 8.5mΩ General Descriptions Features rDS ON = 8.5mΩ, VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3mΩ, VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using
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FDP8876
O-220AB
FDP8876
71A marking
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AN-994
Abstract: IRF530N IRF530NL IRF530NS
Text: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-149-37 IRF530NS HEXFET D2Pak PD - 91352A IRF530NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology
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IRF530NS
1352A
IRF530NS/L
IRF530NS)
IRF530NL)
AN-994
IRF530N
IRF530NL
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Untitled
Abstract: No abstract text available
Text: FDPF10N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 9 A, 850 mΩ Features Description • RDS on = 710 mΩ (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDPF10N50FT
100nsec
200nsec
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AN-994
Abstract: IRL3303 IRL3303L IRL3303S
Text: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-179-89 IRL3303S HEXFET D2Pak PD - 9.1323B IRL3303S/L l l l l l l l Logic-Level Gate Drive Advanced Process Technology
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IRL3303S
1323B
IRL3303S/L
IRL3303S)
IRL3303L)
AN-994
IRL3303
IRL3303L
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AN-994
Abstract: IRF520N IRF520NL IRF520NS
Text: 2002-02-21 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-148-46 IRF520NS HEXFET D2Pak PD -91340A IRF520NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology
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IRF520NS
-91340A
IRF520NS/L
IRF520NS)
IRF520NL)
AN-994
IRF520N
IRF520NL
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IRLR3410
Abstract: IRLU3410 AN-994 IRL530N
Text: 2002-03-06 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-187-06 IRLR3410 HEXFET D-Pak PD - 91607B IRLR/U3410 HEXFET Power MOSFET Logic Level Gate Drive l Ultra Low On-Resistance
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IRLR3410
91607B
IRLR/U3410
IRLR3410)
IRLU3410)
IRLU3410
AN-994
IRL530N
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AN-994
Abstract: IRLR3303 IRLU3303
Text: 2002-03-06 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-186-98 IRLR3303 HEXFET D-Pak PD - 91316F IRLR/U3303 HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive
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IRLR3303
91316F
IRLR/U3303
IRLR3303)
IRLU3303)
AN-994
IRLU3303
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Microwave PIN diode
Abstract: N0627 1sv85 8542A 1SV36 ND6361-3F ND6371-5E T07 marking 1SV26 MARKING 8542a
Text: 'T - O l- lS N E C / 1SE CALIFORNIA NEC D H b457414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261,71, 81, ND6361, 71 ND6461, 71 ND6481, ND6651. 61
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fa4274m
ND6000
T-07-/S
ND6261
ND6361,
ND6461,
ND6481,
ND6651.
ND6261,
Microwave PIN diode
N0627
1sv85
8542A
1SV36
ND6361-3F
ND6371-5E
T07 marking
1SV26
MARKING 8542a
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode W tm SF5SC4 OUTLINE fk 40V Feature • Tj=150°C • Tj= 150°C • PR RSM T ’A ' i ^ V Î ' I ' K i E • • 71 [ Æ -J U K • Full M o ld e d • I Ê S I f f i2 k V « | I • D ie le ctric S tren g th 2 k V Rating
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Microwave PIN diode
Abstract: 1SV36 ND6000 8542A N0627 1SV37 ND6361-3F ND6371-5E d6471
Text: N E C / 1SE D CALIFORNIA NEC H T-07-IS fc.427414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS qa - 25°o • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261, 71, 81, ND6361, 71 ND6461, 71
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b4E7M14
ND6000
ND6261
ND6361,
ND6461,
ND6481,
ND6651,
ND6261,
71r81,
Microwave PIN diode
1SV36
8542A
N0627
1SV37
ND6361-3F
ND6371-5E
d6471
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f8l60
Abstract: f8l60usm SF8L60USM 2kv diode fly wheel diode marking code 58 f8l6
Text: Super Fast Recovery Diode Single Diode W tm SF8L60USM OUTLINE 60 0V 8A Feature • m s 'ix • • L o w N oise tr r = 2 5 n s • trr= 2 5 n s • 71 [Æ - J U K • Full M o ld e d • « I M E 2kVSEE • D ie le ctric S tre n g th 2kV Main Use • T.'i
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SF8L60USM
FTQ-220A
F8L60USM
waveli50Hz
f8l60
f8l60usm
SF8L60USM
2kv diode
fly wheel
diode marking code 58
f8l6
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