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    DIODE MA 150 Search Results

    DIODE MA 150 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MA 150 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2068 dd

    Abstract: 6811 6A259 6A595 6B259 6B273 6B595
    Text: ALLEGRO POWER INTERFACE APPLICATION GUIDE LED DISPLAY DRIVERS Io Abs Max Vo OUTPUTS SINK/ SOURCE DIODE CLAMP LATCHED DRIVERS SERIAL INPUT r DS on PACKAGE DEVICE 90 mA 90 mA 100 mA 100 mA 100 mA 150mA 150 mA 150 mA 150 mA 350 mA 120 mA 350 mA 17 V 17 V 20 V


    Original     		PDF 150mA AMS-180E 2068 dd 6811 6A259 6A595 6B259 6B273 6B595

    2068 DD

    Abstract: 6A259 6A595 6B259 6B273 6B595 2068 DD 8 pin dip
    Text: ALLEGRO POWER INTERFACE APPLICATION GUIDE LED DISPLAY DRIVERS Io Abs Max Vo OUTPUTS SINK/ SOURCE DIODE CLAMP LATCHED DRIVERS SERIAL INPUT r DS on PACKAGE DEVICE 90 mA 90 mA 100 mA 100 mA 100 mA 150 mA 150 mA 150 mA 350 mA 120 mA 350 mA 17 V 17 V 20 V 30 V


    Original     		PDF AMS-180C 2068 DD 6A259 6A595 6B259 6B273 6B595 2068 DD 8 pin dip

    ADN2848

    Abstract: ADN2848ACP-32 ADN2848ACP-32-RL ADN2848ACP-32-RL7 ADN2850 ADN2860 CP-32 MO-220-VHHD-2 transmitter circuit using laser diode
    Text: a 3 V Dual-Loop 50 Mbps to 1.25 Gbps Laser Diode Driver ADN2848 FEATURES 50 Mbps to 1.25 Gbps Operation Single 3.3 V Operation Bias Current Range 2 mA to 100 mA Modulation Current Range 5 mA to 80 mA Monitor Photo Diode Current 50 ␮A to 1200 ␮A 50 mA Supply Current at 3.3 V


    Original     		PDF ADN2848 32-Lead ADN2848 32-Lead CP-32) MO-220-VHHD-2 C02746 ADN2848ACP-32 ADN2848ACP-32-RL ADN2848ACP-32-RL7 ADN2850 ADN2860 CP-32 MO-220-VHHD-2 transmitter circuit using laser diode

    Untitled

    Abstract: No abstract text available
    Text: 1N5346B 9.1 V - 150 MA - 5 W Glass Passivated Zener Diode 1.40 Diodes Reference/Re. Page 1 of 1 Enter Your Part # Home Part Number: 1N5346B Online Store 1N5346B Diodes 9.1 V - 150 MA - 5 W Glass Passivated Zener Diode Transistors Integrated Circuits Optoelectronics


    Original     		PDF 1N5346B 1N5346B DO-201AD com/1n5346b

    1N4448W

    Abstract: 5KV fast recovery DIODE
    Text: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25℃ IFSM 500 mA Power Dissipation Ptot


    Original     		PDF 1N4448W OD-123 1N4448W 5KV fast recovery DIODE

    1N4448WS

    Abstract: No abstract text available
    Text: 1N4448WS SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25 C IFSM 500 mA Power Dissipation Ptot


    Original     		PDF 1N4448WS OD-323 1N4448WS

    Untitled

    Abstract: No abstract text available
    Text: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25℃ IFSM 500 mA Power Dissipation Ptot


    Original     		PDF 1N4448W OD-123

    1N4448W

    Abstract: No abstract text available
    Text: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25℃ IFSM 500 mA Power Dissipation Ptot


    Original     		PDF 1N4448W OD-123 1N4448W

    1N4448WS

    Abstract: No abstract text available
    Text: 1N4448WS SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25 C IFSM 500 mA Power Dissipation Ptot


    Original     		PDF 1N4448WS OD-323 1N4448WS

    Untitled

    Abstract: No abstract text available
    Text: 1N4448WS SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25 C IFSM 500 mA Power Dissipation Ptot


    Original     		PDF 1N4448WS 100mA 100MHz, OD-323

    5KV fast recovery DIODE

    Abstract: 1N4448W
    Text: 1N4448W SILICON EPITAXIAL PLANAR DIODE Fast switching diode Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 mA Surge Forward Current at t<1s and Tj = 25℃ IFSM 500 mA Power Dissipation Ptot


    Original     		PDF 1N4448W OD-123 5KV fast recovery DIODE 1N4448W

    Untitled

    Abstract: No abstract text available
    Text: BAV99 200 mA 70 V High Conductance Ultra-Fast Switching Diode Features Description • • • • The BAV99 is a 350 mW high-speed switching diode array with series-pair diode configuration. It achieves high-current conductivity, up to 200 mA, in a very small


    Original     		PDF BAV99 BAV99 OT-23 BAV70 BAW56.

    Untitled

    Abstract: No abstract text available
    Text: Diodes DIP Type Silicon Epitaxial Planar Diode 1N4148 Features Fast switching diode DO34 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Reverse voltage VR 75 V Peak reverse voltage VRM 100 V IF 200 mA Io 150 mA Surge Forward Current at t < 1 s and Tj = 25


    Original     		PDF 1N4148

    C 828 Transistor

    Abstract: C 828 Transistor pins TRANSISTOR C 369 transistor c 828 low level Mil-R-39016 iC 828 Transistor transistor 828 MIL-R-39016/9 828 diode MIL-R-39016-9
    Text: MA MAD MADD MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MA MAD MADD MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE


    Original     		PDF MIL-R-39016/9 MIL-R-39016/15 MIL-R-39016/20 MIL-R-28776/1 C 828 Transistor C 828 Transistor pins TRANSISTOR C 369 transistor c 828 low level Mil-R-39016 iC 828 Transistor transistor 828 MIL-R-39016/9 828 diode MIL-R-39016-9

    minimelf diodes color

    Abstract: MINI-MELF DIODE BLACK CATHODE CDSU4148 CDSN4148 CDSS4148
    Text: Small-Signal Switching Diode LL4148-G Reverse Voltage:100V Forward Current: 150 mA Features MiniMELF SOD-80 Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the


    Original     		PDF LL4148-G OD-80) CDSU4148, CDSS4148 CDSN4148 100MHz, MDS0209003A minimelf diodes color MINI-MELF DIODE BLACK CATHODE CDSU4148 CDSN4148

    MSWSH-020-24

    Abstract: MEST2G-025-10
    Text: Spice Models for Aeroflex / Metelics PIN Diode Switch Elements CHIP Robert Caverly Non-Linear Diode SPICE N=1 PIN Diode SPST & SPDT Switch Elements S Par's Is mA Iknee mA Repi Ohm s CJmod Series PIN Y Y 2.50E-07 5 1000 0.04 MEST2GFC-010-25 Series Pin N N


    Original     		PDF 50E-07 MEST2GFC-010-25 MEST2G-020-15 30E-07 90E-06 MEST2G-050-45 A17134 MSWSH-020-24 MEST2G-025-10

    Untitled

    Abstract: No abstract text available
    Text: BAW56M3T5G Preferred Device Product Preview Monolithic Dual Switching Diode Common Anode http://onsemi.com MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Rating Peak Forward Surge Current


    Original     		PDF BAW56M3T5G OT-723 631AA BAW56M3/D

    Untitled

    Abstract: No abstract text available
    Text: BAV99LT1 HIGH-SPEED DOUBLE DIODE fast switching in thick and thin-film circuits diode. Cathode 2 1 Anode 3 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit VR 75 V VRRM 85 V IF 215 125 mA mA IFRM 450 mA Non-repetitive Peak Forward Current Tj = 25 C


    Original     		PDF BAV99LT1 OT-23 150mA 150oC

    BAV99LT1

    Abstract: No abstract text available
    Text: BAV99LT1 HIGH-SPEED DOUBLE DIODE fast switching in thick and thin-film circuits diode. Cathode 2 1 Anode 3 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit VR 75 V VRRM 85 V IF 215 125 mA mA IFRM 450 mA Non-repetitive Peak Forward Current Tj = 25 C


    Original     		PDF BAV99LT1 OT-23 BAV99LT1

    minimelf diodes color

    Abstract: cdsu4148 CDSN4148 CDSS4148 minimelf SOD80
    Text: Small-Signal Switching Diode COMCHIP www.comchip.com.tw LL4148-G Reverse Voltage:100V Forward Current: 150 mA Features MiniMELF SOD-80 Silicon Epitaxial Planar Diode Fast switching diode in MiniMELF case especially suited for automatic insertion. This diode is also available in other case styles including the


    Original     		PDF LL4148-G OD-80) CDSU4148, CDSS4148 CDSN4148 100MHz, MDS0209003A minimelf diodes color cdsu4148 CDSN4148 minimelf SOD80

    BAV99LT1

    Abstract: No abstract text available
    Text: BAV99LT1 HIGH-SPEED DOUBLE DIODE fast switching in thick and thin-film circuits diode. Cathode 2 1 Anode 3 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit VR 75 V VRRM 85 V IF 215 125 mA mA IFRM 450 mA Non-repetitive Peak Forward Current Tj = 25 C


    Original     		PDF BAV99LT1 OT-23 150oC BAV99LT1

    SL 100 NPN Transistor

    Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
    Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE


    OCR Scan     		PDF THC-2484 THC-4123 THC-4124 THC-4125 THC-4126 THC-40D4 THC-40D5 THC-41D4 THC-41D5 SL 100 NPN Transistor bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor

    35Y4

    Abstract: EH-117 lamp ion ballast tube tube 35Y4
    Text: TENTATIVE 35Y4 DATA TUNG-SOL DIODE T -9 COATED UN I POTENTIAL CATHODE 2f MA X . 5_ 3 ^ HEATER MAX. 35 VOLTS 150 MA. AC OR DC 52 ANY MOUNTING POSITION 1-5_ _ I 6 _ MA X . GLASS 6UL8 8 P IN L O C K -IN THE 35Y4 IS A SINGLE DIODE IN THE LO CK-IN CONSTRUCTION INTENDED FOR HALF­


    OCR Scan     		PDF M8-210 35Y4 EH-117 lamp ion ballast tube tube 35Y4

    kln105

    Abstract: KLN105B KLN124A KPD410 KPD603 KPT610
    Text: Infrared Light Emitting Diode Maximum Ratings Applications TYP vF TYP Po TYP Ap AA TYP ¿ iír O .? Matched <mA Pd mW) (V) If (mA) (mW) *F (mA) (nm) If (mA) (nm) If (mA) O p tical Sw itch 100 150 1.35 100 11 50 940 10 40 10 KLN124A O p tic a l Sw itch 100


    OCR Scan     		PDF KLN105B KPD603 KPD410 KLN124A KPT610 KLN105B KPD410 KLN124A KPD603 kln105 KPT610