biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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lx2400
Abstract: LX2400ILG IEC61215 ul 1741 photovoltaic module 5w LX2400 Microsemi photovoltaic module ul 1741 download pv dc/ac solar pv inverter
Text: PRODUCT BRIEF LX2400 IDEALSolar Bypass Diode DESCRIPTION Solar Bypass Diode for Photovoltaic PV Modules with Industry’s Lowest Forward Voltage Drop and Lowest Operating Temperature The LX2400 IDEALSolarTM Bypass Diode with Microsemi’s patented CoolRUNTM technology provides a bypass path in PV
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LX2400
LX2400
120VAC
240VAC
LX2400ILG
LX2400ILG
IEC61215
ul 1741
photovoltaic module 5w
LX2400 Microsemi
photovoltaic module
ul 1741 download
pv dc/ac
solar pv inverter
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pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
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94v0
Abstract: ATO Diode ATO Shunt diode PIV 2000 ATO resistor DIODE 40c Specialty connector ul 94v0
Text: Specialty Products Special Products Specifications ATO Resistor Part Number: 02400100_ series ATO® Diode Part Number: 02400103_ Z = 1500 / LXN = 50 1 A Diode in ATO® size housing. The cathode connector is rotated 90° 1-A-Diode in ATO® -Größe mit 90°-abgewinkeltem
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02400094P
94v0
ATO Diode
ATO Shunt
diode PIV 2000
ATO resistor
DIODE 40c
Specialty connector
ul 94v0
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Microsemi LX3055
Abstract: photo diode 10 Gbps LX3055 1550nm photodiode 1.6 Ghz VCSEL 1550 nm 1 Gbps 1550nm VCSEL InGaAs Photodiode 1550nm PHOTO diode
Text: LX3055 TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offer high responsivity, low dark current, and
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LX3055
1310nm
1550nm
LX3055
Microsemi LX3055
photo diode 10 Gbps
1550nm photodiode 1.6 Ghz
VCSEL 1550 nm 1 Gbps
1550nm VCSEL
InGaAs Photodiode 1550nm
PHOTO diode
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1550nm photodiode 1.6 Ghz
Abstract: 1550nm photodiode 5 Ghz LX3055 InGaAs Photodiode 1550nm
Text: LX3055 TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offers high responsivity, low dark current, and
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LX3055
1310nm
1550nm
LX3055
1550nm photodiode 1.6 Ghz
1550nm photodiode 5 Ghz
InGaAs Photodiode 1550nm
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5SYA2039
Abstract: 2000J170300
Text: Data Sheet, Doc. No. 5SYA 1421-01 04-2012 5SLA 2000J170300 HiPak DIODE Module VRRM = 1700 V IF = 2000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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2000J170300
CH-5600
5SYA2039
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5SLD 0600J650100
Abstract: 0600J650100
Text: VRRM = IF = 6500 V 2x 600 A ABB HiPakTM DIODE Module 5SLD 0600J650100 Doc. No. 5SYA 1412-01 04-2012 Low-loss, rugged SPT diode Smooth switching SPT diode for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability
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0600J650100
CH-5600
5SLD 0600J650100
0600J650100
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5SLD1000N330300
Abstract: 5SYA2039 diode in 400 1000N330300 UC1250
Text: Data Sheet, Doc. No. 5SYA 1419-03 06-2012 5SLD 1000N330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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1000N330300
CH-5600
5SLD1000N330300
5SYA2039
diode in 400
UC1250
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5SYA2039
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1421-00 12-2011 5SLA 2000J170300 ABB HiPakTM Diode Module VRRM = 1700 V IF = 2000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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2000J170300
CH-5600
5SYA2039
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Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1416-02 04-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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3600E170300
CH-5600
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4DSM
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1416-00 04-2011 5SLA 3600E170300 ABB HiPakTM, Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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3600E170300
CH-5600
4DSM
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1416-01 11-2011 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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3600E170300
CH-5600
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abb 630
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1421-01 04-2012 5SLA 2000J170300 ABB HiPakTM Diode Module VRRM = 1700 V IF = 2000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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2000J170300
CH-5600
abb 630
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1435-00 09-2013 5SLG 0500P330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 500 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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0500P330300
CH-5600
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1436-00 10-2013 5SLG 0600P450300 HiPak DIODE Module VRRM = 4500 V IF = 2 x 600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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0600P450300
CH-5600
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iec 61287
Abstract: 1200J450350 5SLD1200J450350
Text: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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1200J450350
CH-5600
1200J450350
iec 61287
5SLD1200J450350
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Untitled
Abstract: No abstract text available
Text: VRRM = IF = 3300 V 1200 A ABB HiPakTM DIODE Module 5SLD 1200J330100 Doc. No. 5SYA 1566-00 June 06 • Low-loss, rugged SPT diode Smooth switching SPT diode for good EMC Industry standard package High power density AlSiC base-plate for high power cycling
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1200J330100
UL1557,
E196689
CH-5600
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5SLD 1000N330300
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1419-03 06-2012 5SLD 1000N330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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1000N330300
CH-5600
5SLD 1000N330300
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5SLG 0600P450300
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1436-01 01-2014 5SLG 0600P450300 HiPak DIODE Module VRRM = 4500 V IF = 2 x 600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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0600P450300
CH-5600
5SLG 0600P450300
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1424-01 08-2012 5SLD 1200J450350 HiPak DIODE Module VRRM = 4500 V IF = 2 x 1200 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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1200J450350
UL1557,
E196689
CH-5600
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Photocathode
Abstract: intensifier XX1060 XX1210 XX1110 XX1190 cd 1191 XX1111 XX1112 XX1191
Text: Image intensifier tubes Single stage Type X X 1110 XX1111 XX 1190 X X 1191 XX 1200 XX 1201 Configuration Tetrode Tetrode Diode Diode Diode Diode Focusing method electrostatic Input face plate Fiber optics, flat 38 25 25 18 18 Glass Fiber optics Glass useful 9 in mm
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XX1110
XX1111
XX1191
Photocathode
intensifier
XX1060
XX1210
XX1190
cd 1191
XX1112
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Pulsed Laser 1550nm
Abstract: No abstract text available
Text: , N E C / / _PRELIMINARY DATA SHEET_ LASER DIODE NDL7553P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7553P Series are 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode
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NDL7553P
1550nm
145mW
1000mA
NDL7553P1
10//s,
1000mA
Pulsed Laser 1550nm
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC PHOTO DIODE ELECTRON DEVICE PH310 PLASTIC MOLDED PIN PHOTO DIODE NEPOC SERIES DESCRIPTION PH310 is a photo diode w ith PIN structure. It has a wide ^ r î^ ll ; i:; ?; i; i:; ?; ?; ?; ?; ?Í i:>: photo-receiving area and high speed response enabling applica
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PH310
PH310
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