MR4020
Abstract: schematic diagram dc-dc PoE13P-33L LT 805 nf805 UM0464 S2G36 ST replacement reference led 805 VIPER53
Text: UM0464 User manual Power over Ethernet PoE Powered Device (PD) demonstration board 1 Introduction This user manual provides a functional description of a typical PoE-PD (Power over Ethernet – Powered Device) application and in detail explains an example of it, a PoE-PD
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UM0464
STEVAL-TSP002V1
MR4020
schematic diagram dc-dc
PoE13P-33L
LT 805
nf805
UM0464
S2G36
ST replacement reference
led 805
VIPER53
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3.3V TVS
Abstract: TVS SMAJ marking "power sourcing equipment"
Text: LTC4267-1 Power over Ethernet IEEE 802.3af PD Interface with Integrated Switching Regulator Description Features Complete Power Interface Port for IEEE 802 .3af Powered Device PD n Onboard 100V, UVLO Switch n Precision Dual Level Inrush Current Limit n Integrated Current Mode Switching Regulator
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LTC4267-1
42671fa
com/4267-1
3.3V TVS
TVS SMAJ marking
"power sourcing equipment"
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EEX500-IB1-E8
Abstract: EX250 JIS-X-5101 connector 11 pin female lumberg EX500-IB1 GVVZS3000-21A-4 diode catalogue OMRON BF 302 VINCENT sv 236 EX120-SIB1
Text: CAT.ES11-81 A -UK 5 Port Solenoid Valve Series SV New Concept Connector Type Manifold Series Series SV1000/2000/3000/4000 SV1000/2000/3000/4000 The use of multi-pin connectors to replace wiring inside manifold blocks provides flexibility when adding stations or changing manifold configuration.
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ES11-81
SV1000/2000/3000/4000
EEX500-IB1-E8
EX250
JIS-X-5101
connector 11 pin female lumberg
EX500-IB1
GVVZS3000-21A-4
diode catalogue
OMRON BF 302
VINCENT sv 236
EX120-SIB1
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GVVZS3000-21A-2
Abstract: VVQ2000-51A-C10 SS5V1-W16SA1WD-06B-C6 EX500-AC000-S diode catalogue AS3000 SS5V1-16 GVVZS3000-21A-4 IEC529 turck 8 pin m12 connector
Text: 5 Port Solenoid Valve Series SV SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 1.1-1 New Concept Connector Type Manifold Series Series SV1000/2000/3000/4000 SV1000/2000/3000/4000 The use of multi-pin connectors to replace wiring inside manifold blocks provides
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SV1000/2000/3000/4000
30Vrms
UL1310,
UL1585
GVVZS3000-21A-2
VVQ2000-51A-C10
SS5V1-W16SA1WD-06B-C6
EX500-AC000-S
diode catalogue
AS3000
SS5V1-16
GVVZS3000-21A-4
IEC529
turck 8 pin m12 connector
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1XFH12n100
Abstract: transistor 13n80
Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure
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4bflb22b
1532A
200ns)
IXFH12N100
IXFH10N100
IXFM12N100
IXFM10N100
1XFH12n100
transistor 13n80
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Untitled
Abstract: No abstract text available
Text: RECTANGULAR BARS LED LAMPS L I T E M ? I LTL-3217A/3218A BRIGHT RED LTL-3277A/3278A AMBER LT L-3237A/3238A GREEN LTL-3297A ORANGE LTL-3257A/3258A YELLOW TAIWAN LIT ON E L E C T R O N I C 4TE D 0035^3 G G D 3 S b 2 bÜD « T L I T FEATURES • LOW POWER CONSUMPTION.
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LTL-3217A/3218A
LTL-3277A/3278A
L-3237A/3238A
LTL-3297A
LTL-3257A/3258A
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diodo MSC
Abstract: Diodo in 5004 DIODO 4001 pj 325c diodo rp 104 38510/325 cd 4061 P4 DIODO 54LS373 k diodo 541
Text: KIL-M-38510/325C 24 Septem ber 1987 w n re n m rc NIL-M-38510/325B 15 A p r il 1985 MILITARY SPECIFICATIO N M ICROCIRCUITS, D IG IT A L , 8 1POLAR, LON-POHER SCHOTTKY TTL, F L IP - F L O P S , CASCADABLE. MONOLITHIC SILICO N T h is s p e c i f i c a t i o n 1s approved f o r us* by a l l D e p art
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KIL-M-38510/325C
NIL-M-38510/325B
MIL-M-38510.
diodo MSC
Diodo in 5004
DIODO 4001
pj 325c
diodo rp 104
38510/325
cd 4061
P4 DIODO
54LS373
k diodo 541
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Untitled
Abstract: No abstract text available
Text: OM6214SS OM6216SS OM6215SS OM6217SS TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE FEATURES • • • • • Two Isolated M O SFE T s In A Hermetic Metal Package Fast Switching, Low Drive Current Ease of Paralleling For Added Power Low R DS on Available Screened To MIL-S-19500, TX, T X V And S Levels
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OM6214SS
OM6216SS
OM6215SS
OM6217SS
MIL-S-19500,
6214SS
6215SS
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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Untitled
Abstract: No abstract text available
Text: r r u n m TECHNOLOGY _ LTC1624 High Efficiency SO-8 N-Channel Switching Regulator Controller FCRTURCS D C S C R IP TIO n • N-Channel MOSFET Drive ■ Implements Boost, Step-Down, SEPIC and Inverting Regulators ■ Wide V|N Range: 3.5V to 36V Operation
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LTC1624
200kHz
16-Pin
LTC1436/LTC1436-PLL
24-Pin
LTC1474/LTC1475
1624f
CA95035-7417Â
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SA10
Abstract: SA10A SA11 SA11A SA12 SA12A SA170 442 TVS marking code
Text: is TAIWAN SEMICONDUCTOR RoHS COMPLIANCE SA SERIES 500 Watts Transient Voltage Suppressor DO-15 .140 3.6 .104(2.6) Features <{> 1.0 (25.4) MIN. DIA. P lastic p a c k a g e h a s U n d e rw rite rs L a b o rato ry .300 (7 . 6) .230 (5 .8) F ia m m a b iiity C las sific atio n 9 4 V -0
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DO-15
1000us
SA10
SA10A
SA11
SA11A
SA12
SA12A
SA170
442 TVS marking code
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Untitled
Abstract: No abstract text available
Text: is TAIWAN SEMICONDUCTOR RoHS COMPLIANCE SA SERIES 500 Watts Transient Voltage Suppressor DO-15 .140 3 .6 . 1 0 4 (2 .6 ) Features <{> 1.0 (25.4) MIN. DIA. P lastic p a c k a g e h a s U n d e rw rite rs L a b o rato ry .300 (7 . 6) .230 (5 .8) F ia m m a b iiity C las sific atio n 9 4 V -0
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DO-15
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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relais datenbuch siemens
Abstract: siemens datenbuch triac zu 103 ma BSS97 diode sg 5 ts Scans-048 BUZ23 s489 DSAGER00059 Transistor Datenbuch
Text: SIEMENS SIPMOS Kleinsignaltransistoren Technische Beschreibung Ausgabe September 1986 Inh alt 1. Einleitung 5 2. Technologie 5 3. Schaltverhalten 6 4. D atenblattangaben 8 4.1 4.2 4.3 Drainstrom lD Gate-Schwellenspannung VGS th Temperaturabhängigkeit 8 8
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BRT12H
BRT12M
relais datenbuch siemens
siemens datenbuch
triac zu 103 ma
BSS97
diode sg 5 ts
Scans-048
BUZ23
s489
DSAGER00059
Transistor Datenbuch
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Untitled
Abstract: No abstract text available
Text: GE NE R AL SEMI CONDUCTOR 3918590 GENERAL TS S EMI CONDUC T OR General -Jç* Semiconductor ^ « Industries, Inc. FEATU R ES 500 watts Peak Pulse Power Fast Response Available In ranges from 5.0 to 170 volts Bidirectional types available Low clam ping voltage
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SA170A
X910-950-1942
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DIODE S4 58A
Abstract: msm8650 MSM86 sunny HD 319 Diode S4 55a MSM665X
Text: O K I Semiconductor MSMfi6B2/53/54/55/56-xxx, M T W i n n i i g a f m o fiii A n n A n n a t 58A-XXX, MSM0CP5*-xx, KBM6650 Internal M ask ROM Voice Synthesis 1C, Internal 1-Mbit One-Tim e-Program m able O TP ROM V oice Synthesis 1C, External ROM D rive V oice Synthesis 1C
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MSMfi6B2/53/54/55/56-xxx,
KBM6650
MSM6650
MSM6375
MSM6650family
12-bit
DIODE S4 58A
msm8650
MSM86
sunny HD 319
Diode S4 55a
MSM665X
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4 bit bcd adder using ic 7483
Abstract: diode lt 8220 8T18+signetics
Text: C op yrig h t 1 9 7 4 SIGNETICS CORPORATION Signetics Corporation reserves the right to make changes in the products contained in this book in order to improve design or performance and to supply the best possible product. Signetics Corporation assumes no responsibility fo r the use o f any circuits described herein and
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lm 358
Abstract: LM358LM CA258AE CA158E lm 358 ic CA358E
Text: O perational Am plifiers HARRIS S E M I C O N D U C T O R in t e r s il CA158, CA158A, CA258, CA258A, CA358, CA358A, CA2904, LM358*, LM2904* M ay 1 9 9 0 Dual Operational Amplifiers For Com m ercial, Industrial, and Military Applications Features: • a a
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CA158,
CA158A,
CA258,
CA258A,
CA358,
CA358A,
CA2904,
LM358*
LM2904*
lm 358
LM358LM
CA258AE
CA158E
lm 358 ic
CA358E
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What is a TRANSZORB
Abstract: SCL20A 1N6302A 1.5KE 180A keytek* 424 generator SCM120A diode 1.5ke 13A 5643A 1N6042A 5kp28a, 15000W reco relay
Text: TransZorb PROVIDING PROTECTION FOR • Telecommunications • Military • Computer • Industrial • Test & Instrumentation • Medical • Automotive GENERAL SEMICONDUCTOR INDUSTRIES, INC. A TransZorb® is a class o f diode, tw o term inal, that is designed
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Untitled
Abstract: No abstract text available
Text: E2D0017-27-42 O K I Semiconductor M S M 6652/53/54/55/56-xxx, M SM 6652A/53A/ 54A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx Under development , MSM6650 Internal Mask ROM Voice Synthesis 1C, Internal One-Time-Programmable (OTP) ROM Voice Synthesis 1C, External ROM Drive Voice Synthesis 1C
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E2D0017-27-42
6652/53/54/55/56-xxx,
652A/53A/
4A/55A/56A/58A-xxx,
MSM66P54-XX,
MSM66P56-xx
MSM6650
MSM6650
MSM6375
theMSM6650familymembersoffer
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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thT404
ZV15A
ZY33A
ZT696
ZV15B
ZY33B
ZT697
ZT706
ZV27A
ZY62A
triac zd 607
hep c6004
2sb504
2SC 968 NPN Transistor
sje 607
motorola c6004
diode BY127 specifications
K872
af118
Motorola Semiconductor hep c3806p
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rca transistor manual
Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi conductor devices and circuits. It will be useful to engineers, service technicians, edu cators, students, radio amateurs, hobbyists, and others technically interested in transis
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FREQUENCY DOMAIN REFLECTOMETER
Abstract: Tunnel Diode AN-270
Text: 14:07 To bb From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 AN-270 Integrated Circuit Technical Information Note NANOSECOND PULSE HANDLING TECHNIQUES IN l/C INTERCONNECTIONS Prepared by B o b B o tos Integrated Circuit A pplications Engineering The rapid advancement in the field
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AN-270
M0T0/7014
FREQUENCY DOMAIN REFLECTOMETER
Tunnel Diode
AN-270
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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