Transistor 169k
Abstract: No abstract text available
Text: 11.2005 Battery Charger Solutions High Performance Analog ICs Linear Technology’s high performance battery charger ICs Each battery chemistry has unique battery-charging require- enable long battery life by providing precision charging ments. Selecting the correct battery charger increases the
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D-73230
I-20156
SE-164
BB110520K
Transistor 169k
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NTC 2.2K
Abstract: LTC4054L DFN-16 LT1510 LT1512 LT1513 LT1769 LTC4010 LTC4011 LTC4060
Text: 11.2005 Battery Charger Solutions High Performance Analog ICs Linear Technology’s high performance battery charger ICs Each battery chemistry has unique battery-charging require- enable long battery life by providing precision charging ments. Selecting the correct battery charger increases the
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batt593)
D-73230
I-20156
SE-164
BB110520K
NTC 2.2K
LTC4054L
DFN-16
LT1510
LT1512
LT1513
LT1769
LTC4010
LTC4011
LTC4060
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circuit diagram for 48v automatic battery charger
Abstract: circuit diagram for 24V automatic battery charger High Current Voltage Regulator mosfet 7805 7805 12v to 5v 3a Lead Acid Battery Charger Switchmode 7805 12v to 5v 2a 7805 12v to 5v 1a LA 7805 NICD charger 18V datasheet 48V automatic charger
Text: 02.2007 Battery Charger Solutions High Performance Analog ICs Linear Technology’s high performance battery charger ICs Each battery chemistry has unique battery-charging require- enable long battery life by providing precision charging ments. Selecting the correct battery charger increases the
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D-73230
I-20041
SE-164
BB0207OL
circuit diagram for 48v automatic battery charger
circuit diagram for 24V automatic battery charger
High Current Voltage Regulator mosfet 7805
7805 12v to 5v 3a
Lead Acid Battery Charger Switchmode
7805 12v to 5v 2a
7805 12v to 5v 1a
LA 7805
NICD charger 18V datasheet
48V automatic charger
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LTC4006
Abstract: LT1512 LTC4060 LTC1759 DFN-16 LT1510 LT1513 LT1769 LTC4010 LTC4011
Text: 02.2007 Battery Charger Solutions High Performance Analog ICs Linear Technology’s high performance battery charger ICs Each battery chemistry has unique battery-charging require- enable long battery life by providing precision charging ments. Selecting the correct battery charger increases the
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D-73230
I-20041
SE-164
BB0207OL
LTC4006
LT1512
LTC4060
LTC1759
DFN-16
LT1510
LT1513
LT1769
LTC4010
LTC4011
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cr1018
Abstract: 1N914 diode LT1959 LT1959CS8 MBRD835L MMBD914LT1 diode lt 238 DC-355 7-Lead Plastic DD Pak
Text: DEMO MANUAL DC355/DC356 NO-DESIGN SWITCHER LT1959 Monolithic 4A Switcher 5V to 15V Input 1.8V Output U DESCRIPTIO Demonstration circuits DC355 and DC356 are complete DC/DC step-down regulators using the LT 1959 constant frequency, high efficiency converter in 7-pin DD DC356
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DC355/DC356
LT1959
DC355
DC356
DC356)
DC355)
100uF
MBRD835L
1N914
LT1959CR
cr1018
1N914 diode
LT1959CS8
MBRD835L
MMBD914LT1
diode lt 238
DC-355
7-Lead Plastic DD Pak
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2N7002 12w
Abstract: 12w 2n7002 TO-220 2N7002 1N4002 LT1580 LT1580CT LT1584 LT1580CT7-25 LTC1267
Text: LT1580/LT1580-2.5 7A, Very Low Dropout Regulator U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ The LT 1580 is a 7A low dropout regulator designed to power the new generation of microprocessors. The dropout voltage of this device is 100mV at light loads rising to
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LT1580/LT1580-2
100mV
540mV
LT1584.
LTC1430
LT1584
LT1585
LT1587
2N7002 12w
12w 2n7002
TO-220 2N7002
1N4002
LT1580
LT1580CT
LT1584
LT1580CT7-25
LTC1267
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2N7002 12w
Abstract: 12w 2n7002 LT1580 LT1580C LT1580CQ LT1580I LT1580IQ LT1584 lt 1257 LTC1267
Text: LT1580/LT1580-2.5 7A, Very Low Dropout Regulator U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ The LT 1580 is a 7A low dropout regulator designed to power the new generation of microprocessors. The dropout voltage of this device is 100mV at light loads rising to
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LT1580/LT1580-2
100mV
540mV
LT1584.
LTC1430
LT1584
LT1585
LT1587
158025fa
2N7002 12w
12w 2n7002
LT1580
LT1580C
LT1580CQ
LT1580I
LT1580IQ
LT1584
lt 1257
LTC1267
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lt1581
Abstract: No abstract text available
Text: LT1581/LT1581-2.5 10A, Very Low Dropout Regulators U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ The LT 1581 is a 10A low dropout regulator designed to power the new generation of microprocessors. The dropout voltage of this device is 100mV at light loads rising to
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LT1581/LT1581-2
100mV
430mV
LT1584.
LT1575/LT1577
LT1580
LT1584
LT1585
158125fa
lt1581
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LTC1267
Abstract: No abstract text available
Text: LT1580/LT1580-2.5 7A, Very Low Dropout Regulator U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ Low Dropout, 540mV at 7A Output Current Fast Transient Response Remote Sense 1mV Load Regulation Fixed 2.5V Output and Adjustable Output No Supply Sequencing Problems in
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LT1580/LT1580-2
540mV
100mV
LT1584.
LTC1430
LT1584
LT1585
LT1587
158025fas,
LTC1267
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2N7002 12W
Abstract: LT1580I LT1580IQ LT1584 LT1580 LT1580C LT1580CQ LTC1267
Text: LT1580/LT1580-2.5 7A, Very Low Dropout Regulator U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ The LT 1580 is a 7A low dropout regulator designed to power the new generation of microprocessors. The dropout voltage of this device is 100mV at light loads rising to
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LT1580/LT1580-2
100mV
540mV
LT1584.
LTC1430
LT1584
LT1585
LT1587
158025fas,
2N7002 12W
LT1580I
LT1580IQ
LT1584
LT1580
LT1580C
LT1580CQ
LTC1267
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LT1587ADJ
Abstract: 2N7002 12w 12v 10A regulator zvn4206 application 1N4002 LT1581 LT1581CT7 LT1584
Text: LT1581/LT1581-2.5 10A, Very Low Dropout Regulators U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ The LT 1581 is a 10A low dropout regulator designed to power the new generation of microprocessors. The dropout voltage of this device is 100mV at light loads rising to
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LT1581/LT1581-2
100mV
430mV
LT1584.
LT1575/LT1577
LT1580
LT1584
LT1585
158125fa
LT1587ADJ
2N7002 12w
12v 10A regulator
zvn4206 application
1N4002
LT1581
LT1581CT7
LT1584
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2SK1939
Abstract: 2SK1939-01 SC-65 T151 A2281
Text: 2SK1939-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance 03,2±O.l 45*0-2 • No secondary breakdown • Low driving power • High voltage Gate • V GS-=t30V Guarantee
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2SK1939-01
SC-65
2SK1939
2SK1939-01
SC-65
T151
A2281
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN 4566 SB40-03T No.4566 Schottky Barrier Diode 30V, 4A Rectifier A pplications - High frequency rectification switching regulators, converters, choppers . F eatu res • Low forward voltage (Vp max = 0.55V). • Fast reverse recovery time (trr max = 30ns).
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SB40-03T
No4566-3/3
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Untitled
Abstract: No abstract text available
Text: HAT3006R Silicon N Channel / P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP-8 4 7 8 D D 5 6 D D ò ô Neh Pch S1 S3 1, 3 Source
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HAT3006R
ADE-208-480
D-85622
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Untitled
Abstract: No abstract text available
Text: |appllcationH INFO • available ] y UNITRODE 1 UCC2918 UCC3918 Low On Resistance Hot Swap Power Manager FEATURES DESCRIPTION • Integrated 0.06£2 Power MOSFET The UCC3918 Low on Resistance Hot Swap Power Manager provides complete power management, hot swap capability, and circuit breaker functions. The only
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UCC2918
UCC3918
UCC3918
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Untitled
Abstract: No abstract text available
Text: ÖIXYS Thyristor Modules Thyristor/Diode Modules MCC 26 iTRMS = 2 x 50 A MCD 26 ITAVM = 2 x 3 2 A V RRM = 8 - 1 v RRM V DSM V DRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 800 1200 1400 1600 MCC 26-08ÌO1 B MCC 26-12io1 B MCC 26-14io1 B MCC 26-08ÌO8 B
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O-240
26-12io1
26-14io1
26-12io8
26-14io8
26-16io8
26-16io8B
26-16io1
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EVM31-050A
Abstract: ae9t b49 diode M203 P151 T151 JU 0003 EVM31-050 JT diode
Text: EVM31-050A 150A : Outline Drawings POWER TRANSISTOR MODULE • i t s : Features ij —7^4 07 K ftj • h jF E ^fti.' •m m Including Free Wheeling Diode' High DC Current Gain Insulated Type : Applications >9 Power Switching • A C i- ^ W AC M otor Controls
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EVM31-050A(
E82988
E9TS5S35^
19S24
l95t/R89
EVM31-050A
ae9t
b49 diode
M203
P151
T151
JU 0003
EVM31-050
JT diode
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fet ba7 transistor
Abstract: k106 transistor transistor 9651 fet ba7 IRF520 IRF521 k 106 40411 transistor D84CK2 transistor 40411
Text: IRF520,521 D84CL2.K2 ßOTlRi°IMäg IFHT FIELD EFFECT POWER TRANSISTOR 8 AMPERES 1100, 60 VOLTS RlDS ON = 0.3 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged
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IRF520
D84CL2
00A///sec,
fet ba7 transistor
k106 transistor
transistor 9651
fet ba7
IRF521
k 106
40411 transistor
D84CK2
transistor 40411
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GFIJ
Abstract: No abstract text available
Text: 2SK2027-01 FU JI POWER M OS-FET IM-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • Features • High speed switching 03.6*0.2 • Low on-resistance < k5±02 l.3±0.2 • No secondary breakdown • l.ow driving power • High voltage • V gs = ± 3 0 V Guarantee
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2SK2027-01
220AB
SC-46
GFIJ
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Diode LT 023
Abstract: No abstract text available
Text: Thyristor Modules Thyristor/Diode Modules MCC 95 iTRMS = 2 x 180 A MCD 95 iTAVM =2x116A V = 800-1800 V RRM T 0 -2 4 0 AA v RSM V V DSM V DRM V V Version 1 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC T y P e rrm 95-08io1 95-12io1 95-14io1
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2x116A
95-08io1
95-12io1
95-14io1
95-16io1
95-18io1
95-08io8
95-12io8
95-16io8
95-18io8
Diode LT 023
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Untitled
Abstract: No abstract text available
Text: 2SK1385-01R FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET F - I I S E R I E S lOutline Drawings • Features ¡•Hicjh speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V CSS = ± 3 0 V Guarantee
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2SK1385-01R
04iSiKf9
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Untitled
Abstract: No abstract text available
Text: Q Thyristor Modules Thyristor/Diode Modules MCC 310 MCD 310 ^TRMS ^TAVM = 2 x 500 A = 2 x 320 A v RRM = 800 -1800 V v RSM V RRM v DSM V DRM V V Type 800 900 1300 1500 1700 1900 1200 1400 1600 1800 Version 1 Version 1 MCC 310-08io1 MCC 310-12io1 MCC 310-14io1
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310-08io1
310-12io1
310-14io1
4bflb22b
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DIL-16
Abstract: SOIC-16 UCC3912
Text: INTEGRATED CIRCUITS UCC3912 U N IT R O D E Programmable Electronic Circuit Breaker Integrated 0.15 ohm Power M OSFET 3 V to 8V Operation Digital Program mable Current Lim it from 0 to 3A Minimal External Components 1¡.i A Ic c w hen Disabled Program m able on Time
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UCC3912
DIL-16
SOIC-16
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2SK2078
Abstract: transister diode sg 5 ts
Text: TOSHIBA 2SK2078 Discrete Semiconductors Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType c-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance • r d s (o n > = 1 -Q Q ( T y p .)
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2SK2078
300jxA
TCH7e50
2SK2078
transister
diode sg 5 ts
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