1N5420B
Abstract: uses of magnitude comparator LIMITING INRUSH CURRENT mosfet LTC 4120 P-Channel JFET 1N4148 AN21 J177 LMC7211 PT3320
Text: For assistance or to order, call AN21 Application Notes 800 531-5782 PT3100/3320/4100/4120/4420 Series More Application Notes “Hot Plug-in” In-rush Current Limiting Circuits for the PT3100/4100/3320 DC-DC Converters supply current to U1 is provided by resistors R3 and R4, which
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PT3100/3320/4100/4120/4420
PT3100/4100/3320
PT3320
LT1640
1N5420B
uses of magnitude comparator
LIMITING INRUSH CURRENT mosfet
LTC 4120
P-Channel JFET
1N4148
AN21
J177
LMC7211
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Untitled
Abstract: No abstract text available
Text: PRODUCT DATASHEET AAT2400/2401 SwitchRegTM 16 Channel White LED Driver Solution with Full LED Current and Timing Control Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT2400/ 2401 is a highly int egrat ed, high efficiency whit e LED backlight solut ion for large size LCD panels
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AAT2400/2401
AAT2400/
AAT2400)
AAT2401)
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AAT2402
Abstract: No abstract text available
Text: PRODUCT DATASHEET AAT2402M/2402S SwitchRegTM 16 Channel White LED Driver Solution with Full LED Current and Timing Control Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT2402M/ 2402S is a highly int egrat ed, high efficiency whit e LED backlight solut ion for large size LCD
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AAT2402M/2402S
AAT2402M/
2402S
AAT2402M)
AAT2402S)
AAT2402
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MC14511
Abstract: CL-80 display lt 313 UTC LCD driver
Text: UTC MC14511 CMOS IC BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER DESCRIPTION The UTC MC14511 BCD–to–seven segment latch/decoder/driver is constructed with complementary MOS CMOS enhancement mode devices and NPN bipolar output drivers in a single monolithic structure. The
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MC14511
MC14511
QW-R502-021
CL-80
display lt 313
UTC LCD driver
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14511B
Abstract: display lt 313 mc14511b of mc14511b MC14511BCP
Text: MC14511B BCD−To−Seven Segment Latch/Decoder/Driver The MC14511B BCD−to−seven segment latch/decoder/driver is constructed with complementary MOS CMOS enhancement mode devices and NPN bipolar output drivers in a single monolithic structure. The circuit provides the functions of a 4−bit storage latch, an 8421
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MC14511B
MC14070B
MC14511B
14511B
display lt 313
of mc14511b
MC14511BCP
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MC14511 application note
Abstract: mc14511 display lt 313 QW-R502-021 UTC LCD driver Gas-Discharge Display Segment Driver HTL LOGIC bcd to seven segment circuit diagram COUNTER LED bcd MC14070B
Text: UTC MC14511 CMOS IC BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER DESCRIPTION The UTC MC14511 BCD–to–seven segment latch/decoder/driver is constructed with complementary MOS CMOS enhancement mode devices and NPN bipolar output drivers in a single monolithic structure. The
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MC14511
MC14511
QW-R502-021
MC14511 application note
display lt 313
UTC LCD driver
Gas-Discharge Display Segment Driver
HTL LOGIC
bcd to seven segment circuit diagram
COUNTER LED bcd
MC14070B
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125 kHz RFID reader circuit design
Abstract: 125 kHz RFID READER EM 18 CIRCUIT Antenna design parameters for reader IC U2270B 125 kHz RFID antenna design guide Security Transponder IMMOBILIZER Antenna Coil immobilizer antenna 125 kHz RFID parallel antenna center ferrite antenna transponder car key
Text: Electronic Immobilizers for the Automotive Industry U2270B Introduction In recent years increasing numbers of car thefts have highlighted the urgent need for effective and safe protection in the automobile industry. Atmel introduced the industry’s first single-chip reader IC for an automotive immobilizer anti-theft system in
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U2270B
U2270B
125 kHz RFID reader circuit design
125 kHz RFID READER EM 18 CIRCUIT
Antenna design parameters for reader IC U2270B
125 kHz RFID antenna design guide
Security Transponder
IMMOBILIZER Antenna Coil
immobilizer antenna
125 kHz RFID parallel antenna center
ferrite antenna
transponder car key
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Untitled
Abstract: No abstract text available
Text: SN1086 ±1°C Accurate, Remote Diode and Local Digital Temperature Sensor with Two-Wire Interface and Beta Compensation Description Features The SN1086 is an 11-bit digital temperature sensor with a 2-wire System Management Bus SMBus serial interface. The SN1086 accurately measures its own
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SN1086
SN1086
11-bit
MMBT3904.
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G45R2-0405-005
Abstract: HR-PQA2050-10 G45R2-0405 G45R2 HR-PQA2050 1317A-C 187k 220uF 10v hat2173 LTC4440-5
Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1317A-C ACTIVE RESET ISOLATED 18-72V INPUT TO 12V @8A DC/DC POWER CONVERTER LT1952 DESCRIPTION Demonstration circuit 1317A-C is isolated input to high current output 1/8th Brick footprint converter featuring the LT 1952 switching controller with Active Reset circuit. The Active Reset circuit can improve the efficiency in wide input voltage applications. Also, the Active Reset allows the implementation of self-driven synchronous secondary rectifiers
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317A-C
8-72V
LT1952
317A-C
DC1317A-C
BAS516
LT1952-1
220uF,
LT4430
G45R2-0405-005
HR-PQA2050-10
G45R2-0405
G45R2
HR-PQA2050
1317A-C
187k
220uF 10v
hat2173
LTC4440-5
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motorola mc14511b
Abstract: MC14511B "MOTOROLA CMOS LOGIC DATA" of mc14511b semiconductors bi 370 AN84-21 Motorola MC14070B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14511B BCD-To-Seven Segment Latch/Decoder/Driver L SUFFIX CERAMIC CASE 620 The MC14511B BCD–to–seven segment latch/decoder/driver is constructed with complementary MOS CMOS enhancement mode devices and NPN bipolar output drivers in a single monolithic structure. The circuit
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MC14511B
MC14511B
MC14511B/D*
MC14511B/D
motorola mc14511b
"MOTOROLA CMOS LOGIC DATA"
of mc14511b
semiconductors bi 370
AN84-21
Motorola MC14070B
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of mc14511b
Abstract: 14511B MC14511B
Text: MC14511B BCD-To-Seven Segment Latch/Decoder/Driver The MC14511B BCD–to–seven segment latch/decoder/driver is constructed with complementary MOS CMOS enhancement mode devices and NPN bipolar output drivers in a single monolithic structure. The circuit provides the functions of a 4–bit storage latch, an 8421
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MC14511B
MC14511BCP
MC14511BD
MC14511BDW
MC14511BDWR2
MC14511BF
MC14511BFEL
MC14511BFR1
751B-05
of mc14511b
14511B
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C30T06QH C30T06QH-11A so a/ gov 4.81.189 FEATURES o |SQ U A R E -PA K l TO-263AB SM D) P a c k a g e d in 24mm T a p e a n d R e e l : C30T06QH P J1TT7311 M ( 3 A S lT .- £ T 1Q.6(.417) I 9.6Ì.378) 10.K .398) I 8.5( 335} I Ì 4.01157)
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C30T06QH
C30T06QH-11A
O-263AB
J1TT7311
O-220
bblS123
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IRF440
Abstract: DDD511B DDD5141 IRF44 IRF441 IRF442 IRF443 mosfet 441 7964 mosfet
Text: 7964142 DE I T T b m M E SAMSUNG S E M I C O N D UCTOR 98D IN C D T S f -t3 05139 N-CHANNEL POWER MOSFETS □ □ □ S 1 3 ci 1 IRF440/441/442/443 FEATURES Low RD£i on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times
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S13ci
IRF440/441/442/443
IRF440
IRF441
IRF442
IRF443
DDD511B
DDD5141
IRF44
mosfet 441
7964 mosfet
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Diode LT 442
Abstract: Diode LT 443 IRFP441 IRFP440 ir 441 c IRFP443
Text: IRF840/841/842/843 IRFP440/441/442/443 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ru g g e d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended sa le operating area
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IRF840/841/842/843
IRFP440/441/442/443
O-220
IRFP441
IRF840
IRFP440
IRF841
Diode LT 442
Diode LT 443
ir 441 c
IRFP443
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PIN DIODE DRIVER CIRCUITS
Abstract: No abstract text available
Text: HI-901 High Voltage MOS Gate Driver General Description Chip Topography The HI-901 is a bootstrap high side driver circuit for controlling N-channel power FETs. The output pin of the driver is a low impedance CMOS buffer which drives the gate of the FET. The output voltage of the
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HI-901
HI-901
HI-901P
222-HOLT
PIN DIODE DRIVER CIRCUITS
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m1305 transistor
Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Text: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082
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NJMOP-07
NJM318
NJM741
NJM2107F
NJM2130
NJM425#
NJM5534
NJM353
NJM1458
NJM2041
m1305 transistor
w431
MRF1421C
Diode LT 4104
NJT1946A
7082a
NJT1949
magnetron 2j42
MSF1422B
magnetron 5kw
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Untitled
Abstract: No abstract text available
Text: u im TECHNOLOGY LT13 0 7/LT13 0 7B Single Cell Micropower 600kHz PWM DC/DC Converters FCflTURCS D C S C R IP T IO n • Uses Small Ceramic Capacitors ■ 50jjA Quiescent Current LT1307 ■ 1m A Quiescent Current (LT1307B) ■ Operates with V|N as Low as 1V
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7/LT13
600kHz
50jjA
LT1307)
LT1307B)
295mV
500mA
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la 1201 sanyo
Abstract: ic 8057 block diagram pin diagram of lt 542 1109a
Text: 7 ' LT1109A M icro p o w e r D C /D C C on ve rter Flash M em ory VPP G e n e ra to r A djustable a n d Fixed 5V, 12V u m TECHNOLOGY F€flTUft€S DCSCMPTIOn • Uses Oft-the-Shelf Inductors The LT1109A is a simple step-up DC/DC converter. The 8pin DIP or SOIC devices require only fourexternal compo
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LT1109A
360juA
LT1109A-12
150mA
109A-5
110mA
la 1201 sanyo
ic 8057 block diagram
pin diagram of lt 542
1109a
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LTl084
Abstract: LTl085 12v DC 60W
Text: i^ruum _ LT1083/LT1084/LT1085 TECHNOLOGY 7.5A, 5A, 3A Low D ro p o u t Positive A d ju s ta b le Regulators FCRTURCS D C S C R IP TIO n • ■ ■ ■ ■ ■ ■ ■ The LT1083 series of positive adjustable regulators are designed to provide 7.5A, 5Aand 3A with higherefficiency
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LT1083/LT1084/LT1085
LT1083
LTl084
LTl085
12v DC 60W
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LT1220
Abstract: No abstract text available
Text: LT1222 / T u n e r TECHNOLOGY • Gain-Bandwidth: 500MHz ■ Gain of 10 Stable Uncompensated ■ Slew Rate: 200V/|iS Input Noise Voltage: 3nVA/Hz C-Load Op Amp Drives Capacitive Loads External Compensation Pin Maximum Input Offset Voltage: 300|iV Maximum Input Bias Current: 300nA
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LT1222
300nA
00V/mV,
120ns,
500MHz,
RTU2-562-2285
LT1220
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LT1220
Abstract: No abstract text available
Text: r r i m LT1222 m TECHNOLOGY 500MHz, 3nV/VHz, Av > 10 O p eratio nal Am plifier F€RTU R€S DCSCRIPTIOÍ1 • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1222 is a low noise, very high speed operational amplifier with superior DC performance. The LT1222 is
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LT1222
500MHz,
500MHz
00V/jos
300nA
00V/mV,
120ns,
LT1222
LT1220
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gunn diodes
Abstract: gunn 4411 gunn diode 10.5 ghz
Text: NE W J A P A N R A D I O CO L T D MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POWER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw
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NJX40Q0
NJX4000
NJX4402,
CX4410,
4420U
NJX4410,
4420U
NJX4621
gunn diodes
gunn
4411
gunn diode 10.5 ghz
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Diode LT 442
Abstract: Diode LT 443
Text: P D - 9.1311 A International IGR Rectifier IRFZ34NS/L HEXFET Power M O SFET • Advanced Process Technology • Surface Mount IRFZ34NS • Low-profile through-hole (IRFZ34NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated
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IRFZ34NS)
IRFZ34NL)
IRFZ34NS/L
C-444
Diode LT 442
Diode LT 443
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d1s245
Abstract: No abstract text available
Text: a t i o n a l S e m i c o n d u c t o r tß LMD18245 April 1998 N LM D1 8 2 4 5 3A, 55V 3A, 5 5 V D M O S F u ll-B r id g e M o t o r D riv er • DMOS p ow e r stage rated at 55V and 3 A continuous An all DMOS H-bridge p ow e r stage delivers continuous out
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LMD18245
D18245
d1s245
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