Untitled
Abstract: No abstract text available
Text: PoE Ideal Diode Bridge PoE Data Pairs ±VIN1 EN + VOUT LT4321 – EN To PoE PD Controller PoE Spare ±VIN2 Pairs Active Diode Bridge Controller Minimizes Power Loss and Heat in Power over Ethernet Powered Device The LT 4321 ideal diode bridge controller replaces two diode bridge rectifiers with low loss N-channel MOSFET bridges to increase
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LT4321
LT4321
350mA
600mA
LT4275
com/4321
1-800-4-LINEAR
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749022016
Abstract: 749022017 SMBJ58A
Text: DEMO MANUAL DC2093A LT4275/LT4321 LTPoE+/IEEE 802.3at/ IEEE 802.3af Compliant Powered Device Interface Description Demonstration circuit 2093A features the LT 4275, a fourth generation powered device PD controller and the LT4321, an ideal diode bridge controller for Power over
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DC2093A
LT4275/LT4321
LT4321,
DC2093A
DC2093A-A,
DC2093A-B,
DC2093A-C
DC2093A-A
LT4275A
dc2093af
749022016
749022017
SMBJ58A
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Step-up 12V to 36V 300mA
Abstract: LT3473 LT3473A LT3473AEDE LT3473EDD LTC3473A ltc3436 3473
Text: LT3473/LT3473A Micropower 1A Boost Converter with Schottky and Output Disconnect U FEATURES DESCRIPTIO • The LT 3473/LT3473A are micropower step-up DC/DC converters with integrated Schottky diode and output disconnect circuitry in low profile DFN packages. The
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LT3473/LT3473A
3473/LT3473A
50mm2.
LT3471
LT3479
TSSOP-16E
3473f
Step-up 12V to 36V 300mA
LT3473
LT3473A
LT3473AEDE
LT3473EDD
LTC3473A
ltc3436
3473
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a boost dc to ac inverter
Abstract: LT1930 sharp oled display LQH32CN100K53 LQH32CN150K53 LT3494 LT3494EDDB dc ac inverter circuit
Text: LT3494/LT3494A Micropower Low Noise Boost Converters with Output Disconnect FEATURES DESCRIPTION • The LT 3494/LT3494A are low noise boost converters with integrated power switch, Schottky diode and output disconnect circuitry. The parts use a novel* control technique resulting in low output voltage ripple as well as high
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LT3494/LT3494A
3494/LT3494A
350mA
180mA
LT3494A
LT3494
LT3463/LT3463A
250mA
LT3471
3494fb
a boost dc to ac inverter
LT1930
sharp oled display
LQH32CN100K53
LQH32CN150K53
LT3494EDDB
dc ac inverter circuit
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LT3682EDD datasheet
Abstract: LT3682EDD#PBF MARKING TRANSISTOR BD RC B150 LQH55D LT3682 eef 1208
Text: LT3682 1A Micropower Step-Down Switching Regulator FEATURES DESCRIPTION n The LT 3682 is an adjustable frequency 250kHz to 2.2MHz monolithic buck switching regulator that accepts input voltages up to 36V. A high efficiency 0.5Ω switch is included on the device along with a boost diode and the
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LT3682
250kHz
QFN24
TSSOP16E
LT3684
850mA,
DFN10
MSOP10E
LT3685
LT3682EDD datasheet
LT3682EDD#PBF
MARKING TRANSISTOR BD RC
B150
LQH55D
LT3682
eef 1208
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IR E78996
Abstract: E78996 rectifier module E78996 Diode E78996 E78996 IR IRKH136-16D25 14D20 IR E78996 135 KL23014
Text: International H ]Rectifier Power Modules Thyristor with high voltage diode Voltage Range lT A V @ T c i f (a v (1) (2) (3) (4) Diode •TSM' >FSM (5) R th JC DC ) (3) (4) Thyristor (V) (V) (A) (°C ) 50 H z (A) IRKH136-14D20 IRKH136-16D25 IRKL136-14D20
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IRKH136-14D20
IRKH136-16D25
IRKH142-14D20
IRKH142-16D25
IRKH142-18D28
IRKH142-20D32
IRKH162-14D20
IRKH162-16D25
170-14D20
IRKH170-16D25
IR E78996
E78996 rectifier module
E78996 Diode
E78996
E78996 IR
14D20
IR E78996 135
KL23014
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dsei 31-06c
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED Type 440 640 400 600 Symbol LT— I <H-H- 1-0 DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C Test Conditions DSEI 2x 30 DSEI 2x 31 Maximum Ratings (per diode) ^FRM TVJ T\um Tc = 85°C; rectangular, d = 0.5
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30-04C
31-04C
30-06C
31-06C
OT-227
E72873
dsei 31-06c
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Untitled
Abstract: No abstract text available
Text: Bulletin 127101 rev. B 04/98 International IO R Rectifier IRK. SERIES THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 1 3 5 A • H ig h v o lt a g e I E le c t r ic a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS is o la tin g v o lt a g e
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marking m12 sot23
Abstract: M098 M05 SOT-23 SOT-23 marking code BS
Text: SM05 is D ^ J lT H C ^ K ] 300 Watt Surface Mount TVS Diode SM36 TEL: 805-498-2111 DESCRIPTION FEATURES: The SM series of transient voltage suppressors are designed to protect components which are connected to data and transmission lines from over voltages caused
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OT-23
00041A4
marking m12 sot23
M098
M05 SOT-23
SOT-23 marking code BS
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LT 8233
Abstract: diode LT 8233 4CM6 U891 L486 D029 U615
Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS
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00001t3
9305-F-078
lead-171
LT 8233
diode LT 8233
4CM6
U891
L486
D029
U615
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Untitled
Abstract: No abstract text available
Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS
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00Q01t
9305-F-078
DO-35
DO-41
DO-15
DO-201AD
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BZY95C12
Abstract: in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24
Text: SEMITRON INDUSTRIES LT» 43E D • &137 &&^ OOOOISI O B S L C B BZY9S/BZY96/Z2 SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power
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BZY9S/BZY96/Z2
9305-F082
9305-F-082
DO-35
DO-35
DO-41
DO-15
DO-201AD
BZY95C12
in152
BZY95-C12
BZY95-C51
BZY95C22
BZY96C5V1
BZY96C6V2
BZY96-C6V8
BZY95-C24
BZY95C24
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D0201AD
Abstract: No abstract text available
Text: ¡LITE-ON INC ra ijj L 31E D 5531^7 0ÜG1ÔS4 *4 I LT N GaAs T-13/4 MODIFIED 1 ' LEA 50 INFRARED EMITTING DIODE LT E-2871/2871C FEATU RES • S E L E C T E D TO S P E C IF IC O N -L IN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y . • LOW COST. • N A R R O W B EA M .
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S53b3k
T-13/4
LTE-2871/2871C
LTE-2871
D0-41and
D0-41L
201AD
553b3b7
D0201AD
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MB11A02
Abstract: cd7212 Thyristor Modules CD771 thyristor tt 142 n 12 powerex ME30 powerex ME20 powerex ME10 thyristor tt 18 n 800 thyristor TT 18 N 1200
Text: 7294621 POWE RE X INC TI DE | TaTMbai ODDlflET 5 2,_? Thyristor and Diode Modules GTO Thyristor Modules ITGQ lT AV Tc (Am ps) (Amps) (°C) Vdrm (Volts) (Volts) tq fosee) (Volts) d i/d t (A/fjsec) (mA) 100 20 60 1200 15 8.0 1.5 200 400 GDM1/GDM2 GDM1/GDM21210
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GDM1/GDM21210
GDM1/GDM21220
GDM-1210
GDM-1220
MAX/10
MB11A02
cd7212
Thyristor Modules
CD771
thyristor tt 142 n 12
powerex ME30
powerex ME20
powerex ME10
thyristor tt 18 n 800
thyristor TT 18 N 1200
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Diode LT 410
Abstract: No abstract text available
Text: F = 7 SCS -THOMSON * 7 i» MDS35 M 3 © iL iC T [i» g S DIODE /THYRISTORMODULE FEATURES • V d rm = V rrm UP T 0 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE: INSULATING VOLTAGE 2500 V(rmS) DESCRIPTION The MDS35 family are constitued of one rectifier
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MDS35
MDS35
Diode LT 410
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IN4620
Abstract: IN4105 1N4F Diode 1N41 IN411 1N4019 1N4099 1N4135 1N461 1N4614
Text: Micro/semi Corp. ? The diode experts SCOTTSDALE, AZ F o r m o re in fo r m a tio n call: 602 941-6300 1N4099 thru 1N4135 and 1N4614 thru 1N4627 DO-7 FEATURES • SILICON 400 mW LOW NOISE ZENER DIODES ZENER V O LT A G E 1.8V to 100V • ALL HAVE JAN, JANTX and JANTXV
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1N4099
1N4135
1N4614
1N4627
MIL-S-19500/435
66mW/Â
1N4099-1N4135
1N4614-1N4627
IN4620
IN4105
1N4F
Diode 1N41
IN411
1N4019
1N461
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IN4745
Abstract: in4749 in4728
Text: 7" - / / - / 3 LI TE-ON INC CHE D | S 5 3 b 3 b 7 0 0 0 1 4 7 3 3 | IN4728 THRU IN 4764 1 WATT PLASTIC ZENER DIODE V O LT A G E RANGE 3.3 to 100 Volts POWER RATING 1.0 Watts =m = FEA TU RES: DO-41 • • • • Low cost Low zener impedance Excellent clamping
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IN4728
DO-41
DO-41,
IL-STD-202
IN4764
IN4745
in4749
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Untitled
Abstract: No abstract text available
Text: M U R I 0005CT R DACO SEMICONDUCTOR CO., LTD. THRU M U R I 0060CT(R) SUPER FAST DIODE MODULE TYPES 100A Features High Surge Capability 1 0 0 A m p R e c t if ie r Types Up to 60 0V Vrrm 5 0 - 6 0 0 V o lt s TWIN TOWER 4- A R Maximum Ratings Maximum RMS Voltage
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0005CT
0060CT
0040CT
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Untitled
Abstract: No abstract text available
Text: TAIWAN LI TO N E L E C T R O N I C E4E D Ö S 3 S S 47 0 0 0 0 1 2 b T • GaAs T-1% MODIFIED 1 LEAD 5<£ INFRARED EMITTING DIODE " SPECIALIST LT E»2871/2871C FEATURES •SELECTED TO SPECIFIC ON-LINE INTENSITY AND R AD IAN T INTENSITY. • LOW COST. • NARROW BEAM.
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3S547
LTE-2871/2871C
LTE-2871
Temperature-25Â
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MRD500
Abstract: motorola MRD500 MRD510 laser diode RW
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRD500 MRD510 P h o to D e te c to rs Diode Output PHOTO D E T E C T O R S DIODE O U TP U T PIN SILICO N 250 M ILLIW ATTS 100 V O LT S . . . d e sig n e d fo r a p p lic a tio n in laser d e te ctio n , lig h t d e m o d u la tio n , d e te ctio n o f v is ib le
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MRD500
MRD510
RD500)
MRD510)
MRD500
motorola MRD500
MRD510
laser diode RW
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LT 5247
Abstract: 5253-1N LT 5247 H LT 5224 diode LT 5245 IN5242 IC 5276 in5250 LT 5249 LT 5252
Text: Mierosemi Corp. f The diode experts SCOTTSDALE, A Z 1N 5221 thru 1N 5281 DO-35 F o r more inform ation call: 602 941-6300 FEATURES SILICO N • 2.4 TH R U 200 V O LTS 500 mW • C O M PAC T PAC K A G E ZEN ER D IO D E S • C O N S U LT FA C T O R Y FOR V O LTAG ES AB O V E 200 V
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DO-35
1N5221A,
1N5242A,
1N5243A,
1N5281A,
1N5221
1N5281
LT 5247
5253-1N
LT 5247 H
LT 5224 diode
LT 5245
IN5242
IC 5276
in5250
LT 5249
LT 5252
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in4742a
Abstract: IN4728A IN4759A 1N4134A 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A
Text: 1N4728A thru 1N 4764A DO-41 G LASS Micro/semi Corp. ' The diode expens SCOTTSDALE, AZ F o r m o re in fo rm a tio n call: 602 941-6300 SILICO N 1 WATT ZEN ER D IO D E S FEATURES • 3.3 TH R U 100 V OLTS • H ER M ETIC G LA S S PAC KAGE • C O N S U LT FA C TO R Y FOR V O LTA G ES O VER 100 V
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LTE2871
Abstract: D0-201AD LTE-2871
Text: ¡LITE-ON INC L r a ijj 31E D 5531^7 0ÜG1ÔS4 *4 ILTN GaAs T-13/4 MODIFIED 1 ' LEA 50 INFRARED EMITTING DIODE LT E-2871/2871C FEATU RES • S E L E C T E D TO S P E C IF IC O N -L IN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y . • LOW COST. • N A R R O W B EA M .
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T-13/4
LTE-2871/2871C
LTE-2871
553b3b7
D0201AD
LTE2871
D0-201AD
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MRD510
Abstract: MRD500 motorola MRD500 photo detectors convex lens 250 mw ultra stable diode
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MRD500 MRD510 P h o to D e te c to rs Diode Output PHOTO D E T E C T O R S DIO DE O U TP U T PIN SILICO N 250 M ILLIW A TTS 100 V O LT S . . . d e sig n e d fo r a p p lic a tio n in laser d e te c tio n , lig h t d e m o d u la tio n , d e te c tio n o f v is ib le
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MRD500
MRD510
MRD500)
MRD510)
MRD510
MRD500
motorola MRD500
photo detectors
convex lens
250 mw ultra stable diode
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