1N6496
Abstract: 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100
Text: INCH-POUND MIL-PRF-19500/474G 22 August 2008 SUPERSEDING MIL-PRF-19500/474F 23 January 2007 The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 November 2008. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,
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MIL-PRF-19500/474G
MIL-PRF-19500/474F
1N5768,
1N5770,
1N5772,
1N5774,
1N6100,
1N6101,
1N6496,
1N6506,
1N6496
1N6101
1n6511
1N6506
1N6507
1N5768
1N5770
1N5772
1N5774
1N6100
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1N5770
Abstract: No abstract text available
Text: INCH-POUND MIL-PRF-19500/474F 23 January 2007 SUPERSEDING MIL-PRF-19500/474E 3 November 1997 The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 March 2007. * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,
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MIL-PRF-19500/474F
MIL-PRF-19500/474E
1N5768,
1N5770,
1N5772,
1N5774,
1N6100,
1N6101,
1N6496,
1N6506,
1N5770
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Untitled
Abstract: No abstract text available
Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS
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00Q01t
9305-F-078
DO-35
DO-41
DO-15
DO-201AD
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BZY95C12
Abstract: in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24
Text: SEMITRON INDUSTRIES LT» 43E D • &137 &&^ OOOOISI O B S L C B BZY9S/BZY96/Z2 SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power
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BZY9S/BZY96/Z2
9305-F082
9305-F-082
DO-35
DO-35
DO-41
DO-15
DO-201AD
BZY95C12
in152
BZY95-C12
BZY95-C51
BZY95C22
BZY96C5V1
BZY96C6V2
BZY96-C6V8
BZY95-C24
BZY95C24
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ITB68
Abstract: No abstract text available
Text: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS
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9305-F-080
DO-35
DO-41
DO-15
DO-201AD
ITB68
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MRD500
Abstract: motorola MRD500 MRD510 laser diode RW
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRD500 MRD510 P h o to D e te c to rs Diode Output PHOTO D E T E C T O R S DIODE O U TP U T PIN SILICO N 250 M ILLIW ATTS 100 V O LT S . . . d e sig n e d fo r a p p lic a tio n in laser d e te ctio n , lig h t d e m o d u la tio n , d e te ctio n o f v is ib le
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MRD500
MRD510
RD500)
MRD510)
MRD500
motorola MRD500
MRD510
laser diode RW
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H23L1
Abstract: EI114
Text: G E SOLI» STATE 01 Optoelectronic Specifications. DE J 3fl?SDfll □ □ l c]flD4 D | Ì ^ H ì- K Matched Emitter-Detector Pair H23L1 SYM A B Bi ÿb bi O E El e ei G L Lt R 5 T T he G E Solid State H 23L1 is a matched emitter-detector pair which consists o f a gallium arsenide, infrared emitting diode and a
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H23L1
H23L1
270fl
EI114
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MMBV3102L v v c VOLTAGE VARIABLE CAPACITANCE DIODE 22 pF Nominal 30 V O LT S SILICON EPICAP DIODE . . . d e s ig n e d in th e S u r f a c e M o u n t p a c k a g e fo r g e n e r a l fr e q u e n c y c o n t r o l a n d t u n in g a p p lic a t io n s ; p r o v id in g s o lid - s t a t e r e lia b ilit y
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MMBV3102L
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Untitled
Abstract: No abstract text available
Text: SIEMENS CMPNTS-, OPTO MME » 0231335^ DQGSOSD 1 H S I E X MCT6 S IE M E N S FEATURES M axim um R a tin gs • T w o Isolated C h an nels per Package Gallium Arsenide LED each channel 100mW Power Dissipation at 2 5 C . . . . .
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E52744
100mW
23b32ki
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1XFH12n100
Abstract: transistor 13n80
Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure
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4bflb22b
1532A
200ns)
IXFH12N100
IXFH10N100
IXFM12N100
IXFM10N100
1XFH12n100
transistor 13n80
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Diode LT 023
Abstract: No abstract text available
Text: Thyristor Modules Thyristor/Diode Modules MCC 95 iTRMS = 2 x 180 A MCD 95 iTAVM =2x116A V = 800-1800 V RRM T 0 -2 4 0 AA v RSM V V DSM V DRM V V Version 1 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC T y P e rrm 95-08io1 95-12io1 95-14io1
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2x116A
95-08io1
95-12io1
95-14io1
95-16io1
95-18io1
95-08io8
95-12io8
95-16io8
95-18io8
Diode LT 023
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Diode LT 228
Abstract: No abstract text available
Text: PD - 9.1365A International IQ R Rectifier IR F R /U 1 2 0 N PRELIMINARY HEXFET Power MOSFET S u rfa c e M o u n t IR F R 1 2 0 N S tra ig h t Lead (IR F U 1 2 0 N ) A d v a n c e d P ro ce ss T e c h n o lo g y F ast S w itch in g F ully A v a la n c h e R ated
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AL970
Abstract: No abstract text available
Text: SIEMENS CMPNTS-, OPTO 44E D • SIEM EN S 023b32b 0005110 4 M S I E X LD 271/271H 1" LEADS LD 271L/271 LH INFRARED EMITTER Package Dimensions in Inches mm .024(0.6) .189(4.9) .165(42) ¿*(1.0) I a .to .0» •071 (U> ^ .047 ( U ) ^ _± .028 (0.7)' (1.0)
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023b32b
271/271H
271L/271
307t7
M-30-
30-20HO
AL970
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Untitled
Abstract: No abstract text available
Text: PD - 91302C International IQ R Rectifier IR F R /U 4 1 0 5 HEXFET Power MOSFET • • • • • Ultra Low O n-R esistance Surface M ount IR FR 4105 Straight Lead (IRFU 4105) Fast Switching Fully Avalanche Rated V dss = 55V RüS(on) = 0.045Î2 Description
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91302C
MS-022-BE
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diode lt 445
Abstract: 082-001 alpha
Text: 0 5 8 5 4 4 3 ALPHA 03 D lT |05fl5443 IND/ SEMICONDUCTOR 0000554 fi 03E 0 0 5 5 4 D — |~~ GaAs Parametric Amplifier Varactors Features • High Gain and Low Noise Temperature • Deloach and Houlding Measurements Insure Reproducibility • High Reliability and Space Qualified
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05fl5443
diode lt 445
082-001 alpha
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TD62307P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62307P, TD62307F 7CH LOW SATURATION SINK DRIVER The TD62307P, TD62307F are comprised of seven NPN low saturation drivers. All units feature integral clamp diodes for switching
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TD62307P/F
TD62307P,
TD62307F
TD62307F
120mA
/150m
DIP-16
OP-16
DIP16-P-300-2
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 90 A SIPMOS Power T ransistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 Type Yds Id f lDS on Package Ordering Code BUZ 90 A 600 V 4A 2Ù. TO-220 AB C67078-S1321 -A3 Maxim um Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1321
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TIL127
Abstract: No abstract text available
Text: TILI 27. TIL128A OPTOCOUPLERS 023 28 , MAY 1977-REVISED JUNE 1989 • Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Darlington-Connected Phototransistor • High Direct-Current Transfer Ratio . . . 300% Minimum at 10 mA • High-Voltage Electrical Isolation . . . 5000-Volt Rating
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TIL128A
1977-REVISED
5000-Volt
TIL127
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C139-20
Abstract: I60r CI58 SCR TRIGGER PULSE circuit C138 C138E10E C138E20E C139 c139n10m C139E20E
Text: I C l 3 8 ,9 I The General Electric C l38 and C l 39 Series o f Silicon Controlled Rectifiers are reverse blocking triode thyristor semiconductor devices designed primarily for high-frequency power switching applications which require blocking voltages from 500 to 800 volts and load currents up to 35
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TD62306P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62306P, TD62306F 6CH LOW SATURATION SINK DRIVER The TD62306P, TD62306F are comprised of six NPN low TD62306P saturation drivers. All units feature integral clamp diodes for switching
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TD62306P/F
TD62306P,
TD62306F
TD62306F
TD62306P
120mA
/150m
OP14-P-225-1
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Untitled
Abstract: No abstract text available
Text: Optolnterrupter Specifications H23L1 Matched Emitter-Detector Pair GaAs Infrared Emitting Diode and Microprocessor Compatible Schmitt Trigger SYM. A B Bi «D bt D T he H23L1 is a m atched em itter-detector pair which consists of a gallium arsenide, infrared emitting diode and a high-speed
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H23L1
H23L1
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Diode LT 9250
Abstract: diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 diodes byw 92 diodes byw diode BYW 19
Text: S G S- TH OM SO N O STC D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) T H O M S O N -C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 02252 HIGH EFFICIENCY
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00G2252
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
Diode LT 9250
diode BYW 92
LT 9250
diode lt 0236
5 amp diode byw 92-200
diode BYW 92-200
diodes byw 92
diodes byw
diode BYW 19
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Untitled
Abstract: No abstract text available
Text: Preliminary Information February, 1992 LXT500 U-lnterface Transceiver General Description Features The LXT500 is a 2-wire echo-cancelling transceiver which offers unique advantages for Universal Digital Channel UDC , pair gain and other "data-pipe" applications. It
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LXT500
LXT500
PDS-T500-0192-INT
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SCR Applications Handbook
Abstract: SCR T 780 Applications Handbook SCR Handbook, General electric 12 volt dc to 220 volt ac inverter SCR Handbook c138 p CI58 General electric SCR SCR F Series C138E10E
Text: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 6 00 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 400 500 700 800 850 900 1000 1150 1500 RMS C U R R EN T -A M PER ES
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