NX8313UD
Abstract: NX8313UD-AZ PX10160E STM-16
Text: LASER DIODE NX8313UD 1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8313UD is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8313UD
NX8313UD
STM-16
OC-48
PL10645EJ01V0Danty
NX8313UD-AZ
PX10160E
STM-16
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STM-16
Abstract: PX10160E
Text: DATA SHEET LASER DIODE NX8315XC 1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8315XC is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8315XC
NX8315XC
STM-16
OC-48
STM-16
PX10160E
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NX8313UD
Abstract: PX10160E STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX8313UD 1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8313UD is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8313UD
NX8313UD
STM-16
OC-48
PX10160E
STM-16
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OL3300N-05
Abstract: No abstract text available
Text: PEDF3300N-05-01 1Electronic Components OL3300N-05 This version: Nov. 2000 1310 nm/0.5mW SMT Laser Diode Module with Single Mode Fiber GENERAL DESCRIPTION The OL3300N-05 surface mount type LD module is a 1.3 µm, InGaAsP/InP laser diode coupled to a single mode
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PEDF3300N-05-01
OL3300N-05
OL3300N-05
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OD8220N
Abstract: PEDF8220N-01
Text: PEDF8220N-01 1Electronic Components OD8220N This version: Nov. 2000 1310 nm/ 156 Mbps SMT PIN Photo Diode Module with Single Mode Fiber GENERAL DESCRIPTION The OD8220N surface mount type PD-Preamp module is a 1.3 µm, InGaAs PIN photo diode coupled to a single
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PEDF8220N-01
OD8220N
OD8220N
PEDF8220N-01
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OL3300N-02
Abstract: PEDF3300N-02 PEDF3300N-02-01
Text: PEDF3300N-02-01 1Electronic Components OL3300N-02 This version: Nov. 2000 1310 nm/0.2mW SMT Laser Diode Module with Single Mode Fiber GENERAL DESCRIPTION The OL3300N-02 surface mount type LD module is a 1.3 µm, InGaAsP/InP laser diode coupled to a single mode
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PEDF3300N-02-01
OL3300N-02
OL3300N-02
PEDF3300N-02
PEDF3300N-02-01
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Untitled
Abstract: No abstract text available
Text: TO293 CWDM Series 1270nm to 1450nm DFB TO-Can Package for 10Gb/s Applications Product Brief Description Features The TO293 CWDM is a hermetically sealed device with a photo diode for optical output monitoring. It incorporates 1270nm to 1450nm single mode edge-emitting laser diode chips for use in uncooled applications up to 10.7Gb/
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1270nm
1450nm
10Gb/s
GR-468
OC192/STM-64
AV02-4195EN
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OD8121N
Abstract: PEDF8121N-01
Text: PEDF8121N-01 1Electronic Components OD8121N This version: Nov. 2000 1310 nm SMT PIN Photo Diode Module with Single Mode Fiber GENERAL DESCRIPTION The OD8121N surface mount type PIN-PD module is a 1.3 µm, InGaAs PIN photo diode coupled to a single mode fiber with a pigtail. It is designed for STM-1 L-1.1 OC-3 LR-1 .
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PEDF8121N-01
OD8121N
OD8121N
PEDF8121N-01
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OL3300W
Abstract: sc technical drawing
Text: FEDF3300W-01 1Semiconductor OL3300W This version: Feb. 2000 1310 nm/1 mW SMT Laser Diode Module with Single Mode Fiber GENERAL DESCRIPTION The OL3300W surface mount type LD module is a 1.3 µm, InGaAsP/InP laser diode coupled to a single mode fiber with a pigtail. It is designed for STM-1 L-1.1 OC-3 LR-1 .
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FEDF3300W-01
OL3300W
OL3300W
sc technical drawing
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Untitled
Abstract: No abstract text available
Text: LR120B Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage12 @I(Z) (A) (Test Condition)5.0m Tolerance (%)2 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.30 Temp Coef pp/10k9.0 Maximum Operating Temp (øC)150’
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LR120B
Voltage12
pp/10k9
StyleDO-35
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Untitled
Abstract: No abstract text available
Text: LR120D Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage12 @I(Z) (A) (Test Condition)5.0m Tolerance (%)10 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.30 Temp Coef pp/10k9.0 Maximum Operating Temp (øC)150’
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LR120D
Voltage12
pp/10k9
StyleDO-35
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Untitled
Abstract: No abstract text available
Text: LR120CH Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage12 @I(Z) (A) (Test Condition)5.0m Tolerance (%)5 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.40 Temp Coef pp/10k6.4 Maximum Operating Temp (øC)150þ
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LR120CH
Voltage12
pp/10k6
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LR120C
Abstract: LR120C diode
Text: LR120C Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage12 @I(Z) (A) (Test Condition)5.0m Tolerance (%)5 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.30 Temp Coef pp/10k9.0 Maximum Operating Temp (øC)150’
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LR120C
Voltage12
pp/10k9
StyleDO-35
LR120C diode
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Untitled
Abstract: No abstract text available
Text: LR120A Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage12 @I(Z) (A) (Test Condition)5.0m Tolerance (%)1 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.30 Temp Coef pp/10k9.0 Maximum Operating Temp (øC)150’
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LR120A
Voltage12
pp/10k9
StyleDO-35
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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1N6842
Abstract: 1N6842U3 MIL-PRF19500
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this amendment shall be completed by 7 December 2000. MIL-PRF19500/680 7 September 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY CENTER TAP
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MIL-PRF19500/680
1N6842U3,
MIL-PRF-19500.
1N6842
1N6842U3
MIL-PRF19500
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6091QM
Abstract: diode ed 49
Text: DESCRIPTION AND FEATURES All dimensions in inches. Ø.630 Solid-state indicator lights complete with built-in current-limiting resistor and rectifier diode. Ø.390 Meets NEMA Class 13 .380 6010QM, 6011QM, 6012QM, 6013QM and 6091QM Series Oil-Tight Non-Relampable
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6010QM,
6011QM,
6012QM,
6013QM
6091QM
LR13346
IN4004
diode ed 49
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Untitled
Abstract: No abstract text available
Text: engineered to light up your design www.vcclite.com 1.800.522.5546 6010M, 6011M, 6012M, 6013M and 6091M Series Oil-Tight Non-Relampable Neon-LED Indicator Lights Description and Features Solid-state indicator lights complete with built-in current-limiting resistor and rectifier diode.
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6010M,
6011M,
6012M,
6013M
6091M
6091M1-12V
6091M1-24V
4304H1
6010M3
6011M3
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1N6840
Abstract: 1N6840U3 1N6841 1N6841U3 MIL-PRF19500 smd code marking pk oh SMD diode MARKING CODE Z2 MARKING CODE LR1 DIODE
Text: INCH-POUND MIL-PRF-19500/678 1 July 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON,DUAL SCHOTTKY CENTER TAP POWER RECTIFIER, SURFACE MOUNTED, TYPES 1N6840U3 AND 1N6841U3, JAN, JANTX, JANTXV, JANS This specification is approved for use by all Departments
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MIL-PRF-19500/678
1N6840U3
1N6841U3,
MIL-PRF-19500.
1N6840
1N6841
1N6840
1N6841
1N6841U3
MIL-PRF19500
smd code marking pk oh
SMD diode MARKING CODE Z2
MARKING CODE LR1 DIODE
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Untitled
Abstract: No abstract text available
Text: engineered to light up your design www.vcclite.com 1.800.522.5546 6010M, 6011M, 6012M, 6013M and 6091M Series Oil-Tight Non-Relampable Neon-LED Indicator Lights Description and Features Solid-state indicator lights complete with built-in current-limiting resistor and rectifier diode.
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6010M,
6011M,
6012M,
6013M
6091M
6091M1-12V
6091M1-24V
4304H1
6010M3
6011M3
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IN4004
Abstract: No abstract text available
Text: DESCRIPTION AND FEATURES Solid-state indicator lights complete with built-in current-limiting resistor and rectifier diode. All dimensions in inches. Ø.630 Ø.390 .380 Mounting: Ø.380 9.65 hole. Supplied with internal tooth lock washer and hex nut. Mounting hole pattern on page SP2.
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6010M,
6011M,
6012M,
6013M
6091M
4304H1
4304H5
4304H7
E20325
LR13346
IN4004
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transmitter circuit using laser diode
Abstract: PT7729-61-3T G957 G958 IEC825 613T NeoPhotonics
Text: www.neophotonics.com www.photontec.com VER 2.2 / 060126 Optical Transceivers & Modules PT7729-61-3T Small Form Factor 2.5Gb/s Single Mode 2x10 Transceiver 1 Features 1.1 Transceiver unit with independent 1310nm DFB Laser diode transmitter APD receiver 1.2 Meet SFF MSA with duplex LC receptacle
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PT7729-61-3T
1310nm
OC-48
PT7729
transmitter circuit using laser diode
PT7729-61-3T
G957
G958
IEC825
613T
NeoPhotonics
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5003H
Abstract: equivalent diode no. for diode by 127 photo interrupter module 5002l 5002LC
Text: i Jt PHOTO INTERRUPTED •x>j PS5003HC PHOTO IC INTERRUPTER NEPOC SERIES DESCRIPTION PACKAGE DIMENSIONS Unit : mm The PS5003HC photo interrupter module is a GaAs Light Emitting Diode coupled to a Si monolithic integrated circuit 3.0 ± 0 .2 including a Photo Diode in a plastic housing.
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PS5003HC
PS5003HC
equiv55XXFAMILY
PS5501
PS5501LC
5002H
PS5001
S5001H
5003H
equivalent diode no. for diode by 127
photo interrupter module
5002l
5002LC
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mj10015
Abstract: mj10016 j10016 mj10 BTA 316 transistor
Text: MOTOROLA Order this document by MJ10015/D SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS
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MJ10015/D
MJ10015
MJ10016
j10016
mj10
BTA 316 transistor
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