IRG4PC50FD
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD 9.1469 IRG4PC50FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20
|
Original
|
PDF
|
IRG4PC50FD
O-247AC
IRG4PC50FD
|
IRG4PC50FD
Abstract: diode 10a 400v CC
Text: PD 9.1469A IRG4PC50FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
|
Original
|
PDF
|
IRG4PC50FD
O-247AC
IRG4PC50FD
diode 10a 400v CC
|
IRG4PSH71KD
Abstract: GE 84A Diode LT 410 diode lt 247
Text: PD - 91688 PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for
|
Original
|
PDF
|
IRG4PSH71KD
O-247
O-264,
O-247,
IRG4PSH71KD
GE 84A
Diode LT 410
diode lt 247
|
lt 39 diode smd
Abstract: smd diode 78a IRG4ZH71KD
Text: PD - 91729 IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C,
|
Original
|
PDF
|
IRG4ZH71KD
SMD-10
lt 39 diode smd
smd diode 78a
IRG4ZH71KD
|
irf 2030 n
Abstract: irf 2030 IRF 545 IRFP064V
Text: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ
|
Original
|
PDF
|
IRFP064V
O-247
O-247AC
irf 2030 n
irf 2030
IRF 545
IRFP064V
|
TO-247AC Package
Abstract: IRFP064V irf 2030
Text: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ
|
Original
|
PDF
|
IRFP064V
O-247
TO-247AC Package
IRFP064V
irf 2030
|
IRG4PSH71KD
Abstract: No abstract text available
Text: PD - 91688A PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for
|
Original
|
PDF
|
1688A
IRG4PSH71KD
O-247
O-264,
O-247,
IRG4PSH71KD
|
Untitled
Abstract: No abstract text available
Text: PD - 91688A PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for
|
Original
|
PDF
|
1688A
IRG4PSH71KD
O-247
O-264,
|
gFE smd diode
Abstract: smd transistor 18E irg4zh70ud SMD-10 PACKAGE diode smd 312
Text: PD - 9.1627A IRG4ZH70UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features ● ● ● ● ● ● ● UltraFast IGBT optimized for high switching frequencies IGBT co-packaged with HEXFRED ultrafast, ultra-soft recovery antiparallel diodes for use in
|
Original
|
PDF
|
IRG4ZH70UD
SMD-10
gFE smd diode
smd transistor 18E
irg4zh70ud
SMD-10 PACKAGE
diode smd 312
|
IRL1004
Abstract: No abstract text available
Text: PD - 91702A IRL1004 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 40V RDS on = 0.0065W
|
Original
|
PDF
|
1702A
IRL1004
O-220
IRL1004
|
IRF1407
Abstract: 130AV
Text: PD - 93907 IRF1407 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● Integrated Starter Alternator 42 Volts Automotive Electrical Systems D VDSS = 75V Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating
|
Original
|
PDF
|
IRF1407
130AV
O-220AB
IRF1010
IRF1407
130AV
|
Alternator regulator
Abstract: irf1407 DIODE marking 78A 60v 10KHz ir MOSFET
Text: PD - 93907 IRF1407 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● Integrated Starter Alternator 42 Volts Automotive Electrical Systems D VDSS = 75V Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating
|
Original
|
PDF
|
IRF1407
130AV
swi20AB
IRF1010
Alternator regulator
irf1407
DIODE marking 78A
60v 10KHz ir MOSFET
|
Untitled
Abstract: No abstract text available
Text: PD - 93907 IRF1407 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● Integrated Starter Alternator 42 Volts Automotive Electrical Systems D VDSS = 75V Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating
|
Original
|
PDF
|
IRF1407
130AV
f20AB
IRF1010
|
tic 223
Abstract: A912 hs sot223 A9-13 1ps sot UM 78A
Text: B A S 78A. B A S 78D Silicon Switching Diodes • Switching applications • High breakdow n voltage T ype M a rkin g O rd e rin g c o d e 1 2 -m m ta p e Package* BAS78A BAS78A Q62702 - A910 SOT-223 BAS78B BAS78B Q62702 - A 9 1 1 SOT-223 BAS78C BAS78C
|
OCR Scan
|
PDF
|
BAS78A
BAS78B
BAS78C
BAS78D
Q62702
tic 223
A912
hs sot223
A9-13
1ps sot
UM 78A
|
|
|
Untitled
Abstract: No abstract text available
Text: P D - 9.1627 International IO R Rectifier IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,
|
OCR Scan
|
PDF
|
IRG4ZH70UD
SMD-10
|
IRG4PC50KD
Abstract: No abstract text available
Text: International IÖR Rectifier PD -9.1582A IRG4PC50KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc =1 Ofis, @360V VCE start , T j= 1 2 5 ° C ,
|
OCR Scan
|
PDF
|
IRG4PC50KD
IRG4PC50KD
|
Untitled
Abstract: No abstract text available
Text: International lo g Rectifier HEXFET Power MOSFET • • • • • • • 4855452 PD-9.754 Q 01S454 318 H I N R IRFP064 INTERNATIO NAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance
|
OCR Scan
|
PDF
|
01S454
IRFP064
O-247
levFP064
|
Untitled
Abstract: No abstract text available
Text: PD - 91729 International I R Rectifier IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10 as, VCc = 7 2 0 V , T j = 125°C,
|
OCR Scan
|
PDF
|
IRG4ZH71KD
SMD-10
|
Untitled
Abstract: No abstract text available
Text: PD -91688A In terna tional I O R Rectifier IRG4PSH71KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins
|
OCR Scan
|
PDF
|
-91688A
IRG4PSH71KD
O-247
O-264,
O-247,
|
Untitled
Abstract: No abstract text available
Text: International IÖR Rectifier PD - 91688 IRG4PSH71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins
|
OCR Scan
|
PDF
|
IRG4PSH71
O-247
O-264,
|
DIODE marking 7BA
Abstract: sg 7ba silent relay H3 marking CSA22 diode marking code H5 relay low profile
Text: cP r ilT C T I THE p o s s i b i l i t i e s « he i nfi ni te JSILENT POWER RELAY 1 POLE—10 A LOW PROFILE TYPE IFTR-H3 SERIES • FEATURES • Pin co m p a tib le w ith w id e ly used V S and FTR -H1 series p o w e r relays • U ltra sile n t relay w ith pa tented un iq ue U -sh ap e spring. N oise
|
OCR Scan
|
PDF
|
250VAC,
UL508,
DIODE marking 7BA
sg 7ba
silent relay
H3 marking
CSA22
diode marking code H5
relay low profile
|
transistor IRG4BC10UD
Abstract: IRG4BC10UD
Text: PD -9.1677A International TOR Rectifier IRG4BC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT F ea tu re s • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode
|
OCR Scan
|
PDF
|
IRG4BC10UD
transistor IRG4BC10UD
IRG4BC10UD
|
t 317 transistor
Abstract: bjc 2100 diode um 42A smd diode sm 3c kd smd transistor IOR 451
Text: PD - 91729 International IÖR Rectifier IRG4ZH71KD PRELIMINARY Surface Mountable Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High sh o rt circu it rating op tim ized fo r m otor control, tsc = 1 0|js, V c c = 7 2 0 V , T j = 125°C,
|
OCR Scan
|
PDF
|
IRG4ZH71KD
t 317 transistor
bjc 2100
diode um 42A
smd diode sm 3c
kd smd transistor
IOR 451
|
251f
Abstract: hexfet power mosfets international rectifier UJ 78A DIODE marking CJSS IOR9246 IRF1010 IRL1004
Text: PD - 91702B International IGR Rectifier IRL1004 HEXFET Power MOSFET • • • • • • • Logic-Level G ate Drive A dvanced Process Technology Ultra Low O n-R esistance Dynam ic dv/dt Rating 175 °C O perating Tem perature Fast Switching Fully Avalanche Rated
|
OCR Scan
|
PDF
|
O-220
251f
hexfet power mosfets international rectifier
UJ 78A
DIODE marking CJSS
IOR9246
IRF1010
IRL1004
|
