MMAD1108
Abstract: No abstract text available
Text: MMAD1108 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-Pin SOIC package for use as steering diodes protecting
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MMAD1108
16-Pin
RF01065,
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Untitled
Abstract: No abstract text available
Text: MMAD1103 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin SOIC package for use as steering diodes protecting
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MMAD1103
14-Pin
RF01063,
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Untitled
Abstract: No abstract text available
Text: MAD1103 e3 Available Switching Diode Array Steering Diode TVS ArrayTM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin DIP package for use as steering diodes protecting up
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MAD1103
14-Pin
RF01136,
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DT-670-SD
Abstract: Silicon Diode DT-470 dt 670 c cu DT-670A-SD DT-670C-SD DT-670B-SD DT-670 Lake Shore Cryotronics DT-670E-BR Silicon Diode DT-670
Text: LakeShore DT-670 Series Silicon Diode Temperature Sensor Lake Shore’s DT-670 diode temperature sensors are the most advanced silicon diodes in Lake Shore’s extensive line of cryogenic temperature sensors. Backed by more than thirty years of excellence in cryogenic temperature
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DT-670
DT-670E-BR
DT-670A-SD
DT-670B-SD
DT-670C-SD
DT-670D-SD
DT-670-SD-
DT-670-SD
Silicon Diode DT-470
dt 670 c cu
DT-670A-SD
DT-670C-SD
DT-670B-SD
Lake Shore Cryotronics
DT-670E-BR
Silicon Diode DT-670
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Untitled
Abstract: No abstract text available
Text: MAD1103 e3 Available Switching Diode Array Steering Diode TVS ArrayTM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin DIP package for use as steering diodes protecting up
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MAD1103
14-Pin
RF01136,
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Untitled
Abstract: No abstract text available
Text: MAD1108 e3 Available Switching Diode Array Steering Diode TVS ArrayTM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-Pin DIP package for use as steering diodes protecting up
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PDF
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MAD1108
16-Pin
RF01137,
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Untitled
Abstract: No abstract text available
Text: MAD1109 e3 Available Switching Diode Array Steering Diode TVS ArrayTM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin DIP package for use as steering diodes protecting up
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MAD1109
14-Pin
RF01138,
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Untitled
Abstract: No abstract text available
Text: MMAD1103 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin SOIC package for use as steering diodes protecting
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MMAD1103
14-Pin
RF01063,
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1N4148 JANTX microsemi
Abstract: 1N4148 JANTX 1N4148 JANTXV 1N4148UB 1n4148 general diode microsemi 1n4148 EIA-418D
Text: 1N4148UB Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UB switching/signal diode features ceramic bodied construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching
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1N4148UB
MIL-PRF-19500/116
1N4148UB
MIL-PRF-19500/116.
1N4148
T4-LDS-0281-2,
1N4148 JANTX microsemi
1N4148 JANTX
1N4148 JANTXV
1n4148 general diode
microsemi 1n4148
EIA-418D
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1N4148 JANTX microsemi
Abstract: 1N4148 JANTXV MELF Package EIA-418D
Text: 1N4148UBC Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UBC switching/signal diode features ceramic body with ceramic lid construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with
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1N4148UBC
MIL-PRF-19500/116
1N4148UBC
MIL-PRF-19500/116.
1N4148
T4-LDS-0281-4,
1N4148 JANTX microsemi
1N4148 JANTXV
MELF Package
EIA-418D
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semiconductor
Abstract: hirect H507CH Hirect diode H400TB
Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5
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1N4148 JANTXV
Abstract: 1N4148UB2 EIA-418D
Text: 1N4148UB2 Compliant Two Pin Ceramic Switching Diode Qualified per MIL-PRF-19500/116 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 1N4148UB2 switching/signal diode features ceramic body construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching
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1N4148UB2
MIL-PRF-19500/116
1N4148UB2
MIL-PRF-19500/116.
1N4148
time085
T4-LDS-0281-3,
1N4148 JANTXV
EIA-418D
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N6100 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions
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MIL-PRF-19500/474
1N6100
14-PIN
T4-LDS-0082
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1N6101
Abstract: 1N6101 JAN
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N6101 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions
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MIL-PRF-19500/474
1N6101
16-PIN
T4-LDS-0083
1N6101
1N6101 JAN
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N5770 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays with common anode are multiple, discrete,
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MIL-PRF-19500/474
1N5770
10-PIN
1N5768
T4-LDS-0079
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10-PIN
Abstract: 1N5768 1N5770 diode 474 a
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N5768 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete,
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MIL-PRF-19500/474
1N5768
10-PIN
1N5770
T4-LDS-0078
10-PIN
1N5768
1N5770
diode 474 a
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zener diode RD2.2S
Abstract: RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P
Text: Diode Zener Diode • Zener Diode Quick Reference 1/2 Vz (V) P (W) TYP. 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 Package 0.2 0.15 RD4.7UJ RD5.1UJ
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RD10UJ
RD11UJ
RD12UJ
RD13UJ
RD15UJ
RD16UJ
RD18UJ
RD20UJ
RD22UJ
RD24UJ
zener diode RD2.2S
RD2.0HS
rd2.2m
nec 10f
RD16MW
str 450 a
RD4.3HS
NEC Zener diode RD3.0M
RD3.0HS
RD51P
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solar panel blocking diode
Abstract: No abstract text available
Text: SFDS1045Le3 HALOGEN Schottky Barrier Photovoltaic Bypass Diode FREE DESCRIPTION The SFDS1045Le3 is a single Schottky rectifier assembled in a thin flexible package. The device is designed specifically for use as a photovoltaic bypass diode for solar panels. Its low
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SFDS1045Le3
SFDS1045Le3
RF01055,
solar panel blocking diode
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5BJC4100
Abstract: F5BHC 5BBC3820
Text: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting
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5BJC4100
Abstract: No abstract text available
Text: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting
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l7001
Abstract: No abstract text available
Text: LASER DIODE NDL7001 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode especially designed fo r optical data com m unications. The M ultiple Quantum Well MQW structure can achieve stable operation at high tem perature {+85 "Ci.
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NDL7001
NDL7001
l7001
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UPP1004
Abstract: UPP1001 UPP1002 APP1004
Text: m m m Wturtown, HA m Micnosemi SURFACE MOUNT PACKAGE PIN DIODE 400 V 2.5 WATT Commercial Two-Way Radio Antenna Switch Diode UPP1001 UPP1002 UPP1004 FEATURES DESCRIPTION . . . . With high isolation, low loss, and low distortion characteristics, this Hicroseii P o w e n i t e PIN diode is perfect for two-way radio antenna switch
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UPP1001
UPP1002
UPP1004
100MHz,
UPP1001,
UPP10D1,
UPP1001
UPP1002
APP1004
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SSRN
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE MODULE [ N D L 7 5 1 P InGaAsP MQW-DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION NDL7510P is a 1 310 nm newly developed M ultiple Quantum Well MOW structure pulsed laser diode DIP module with singlemode fiber and internal thermo-electric cooler. It is designed fo r a light source of optical measurement equipment
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NDL7510P
SSRN
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Untitled
Abstract: No abstract text available
Text: SHARP PC450T11 PC450T11 Photocoupler with Built-in Breakdown Diode for Surge Voltage Absorption • Features ■ Outline Dimensions 1. Built-in breakdown diode for absorption of surge voltage 2. High current transfer ratio CTR: MIN. 1 500% at I F= 5mA
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PC450T11
750pcs.
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