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    DIODE L6 Search Results

    DIODE L6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE L6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    L6210 schottky

    Abstract: L6210
    Text: L6210 DUAL SCHOTTKY DIODE BRIDGE . . . . MONOLITHIC ARRAY OF EIGHT SCHOTTKY DIODES HIGH EFFICIENCY 4A PEAK CURRENT LOW FORWARD VOLTAGE FAST RECOVERY TIME TWO SEPARATED DIODE BRIDGES DESCRIPTION The L6210is a monolithic IC containing eight Schottky diodes arranged as two separated diode


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    L6210 L6210is L6210 DIP16 L6210ise L6210 schottky PDF

    L6210 schottky

    Abstract: l6210
    Text: L6210 DUAL SCHOTTKY DIODE BRIDGE . . . . MONOLITHIC ARRAY OF EIGHT SCHOTTKY DIODES HIGH EFFICIENCY 4A PEAK CURRENT LOW FORWARD VOLTAGE FAST RECOVERY TIME TWO SEPARATED DIODE BRIDGES DESCRIPTION The L6210 is a monolithic IC containing eight Schottky diodes arranged as two separated diode


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    L6210 L6210 DIP16 L6210 schottky PDF

    L6210

    Abstract: L6210 schottky
    Text: L6210 DUAL SCHOTTKY DIODE BRIDGE . . . . MONOLITHIC ARRAY OF EIGHT SCHOTTKY DIODES HIGH EFFICIENCY 4A PEAK CURRENT LOW FORWARD VOLTAGE FAST RECOVERY TIME TWO SEPARATED DIODE BRIDGES DESCRIPTION The L6210 is a monolithic IC containing eight Schottky diodes arranged as two separated diode


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    L6210 L6210 DIP16 L6210 schottky PDF

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    Abstract: No abstract text available
    Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC10H065 O-220AC O-220AC STPSC10H065D STPSC10H065DI STPSC10H065B-TR STPSC10H065G-TR DocID023604 PDF

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    Abstract: No abstract text available
    Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC6H065 O-220AC STPSC6H065D STPSC6H065G-TR DocID023247 PDF

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    Abstract: No abstract text available
    Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC10H065 O-220AC STPSC10H065D STPSC10H065G-TR DocID023604 PDF

    Untitled

    Abstract: No abstract text available
    Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC6H065 O-220AC O-220AC STPSC6H065D STPSC6H065DI STPSC6H065B-TR STPSC6H065G-TR DocID023247 PDF

    Untitled

    Abstract: No abstract text available
    Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC4H065 O-220AC O-220AC STPSC4H065D STPSC4H065DI DocID023598 PDF

    Untitled

    Abstract: No abstract text available
    Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603 PDF

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    Abstract: No abstract text available
    Text: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC10H065-Y DocID026618 PDF

    clothes iron

    Abstract: L6720 LLD1005E01
    Text: INFRARED PULSED LASER DIODE L6720 Figure 2: Typical Radiant Power vs. Pulsed Forward Current INFRARED PULSED LASER DIODE Ta=25℃ (Ta=25℃) RELATIVE RADIANT POWER (%) 100 2.5 ep (W) 3.0 PULSED RADIANT POWER L6720 Figure 3: Typical Emission Spectrum 2.0


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    L6720 clothes iron L6720 LLD1005E01 PDF

    STPSC1006D

    Abstract: JESD97
    Text: STPSC1006D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


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    STPSC1006D O-220AC STPSC100n STPSC1006D JESD97 PDF

    STPSC806D

    Abstract: JESD97
    Text: STPSC806D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


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    STPSC806D O-220AC STPSC806D JESD97 PDF

    STPSC806

    Abstract: STPSC806D
    Text: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


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    STPSC806 O-220AC STPSC806D STPSC806 PDF

    STPSC806D

    Abstract: st 393 JESD97
    Text: STPSC806D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


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    STPSC806D O-220AC STPSC806Dn STPSC806D st 393 JESD97 PDF

    LMH6525

    Abstract: High-Frequency Modulation Laser cd dvd
    Text: LMH6525,LMH6526 LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output Literature Number: SNOSAF1A LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output General Description Features The LMH 6525/6526 is a laser diode driver for use in


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    LMH6525 LMH6526 LMH6525/LMH6526 LMHTM6525/6526 High-Frequency Modulation Laser cd dvd PDF

    STPSC1006D

    Abstract: No abstract text available
    Text: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power


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    STPSC1006 O-220AC STPSC1006any STPSC1006D PDF

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    Abstract: No abstract text available
    Text: STPSC606 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC606D The SiC diode is an ultrahigh performance power


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    STPSC606 O-220AC STPSC606D STPSC606G PDF

    Untitled

    Abstract: No abstract text available
    Text: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power


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    STPSC806 O-220AC STPSC806D PDF

    Untitled

    Abstract: No abstract text available
    Text: DSS6-0025BS preliminary V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 6A 0.30 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses


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    DSS6-0025BS O-252 60747and 20110915a PDF

    STPSC1006D

    Abstract: STPSC1006G 16-2-87
    Text: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC1006D Description The SiC diode is an ultrahigh performance power


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    STPSC1006 O-220AC STPSC1006D STPSC1006D STPSC1006G 16-2-87 PDF

    Untitled

    Abstract: No abstract text available
    Text: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A K TO-220AC STPSC806D Description The SiC diode is an ultrahigh performance power


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    STPSC806 O-220AC STPSC806D PDF

    Untitled

    Abstract: No abstract text available
    Text: gjjj SGS-THOMSON L6210 DUAL SCHOTTKY DIODE BRIDGE . MONOLITHIC ARRAY OF EIGHT SCHOTTKY DIODES . HIGH EFFICIENCY . 4A PEAK CURRENT . LOW FORWARD VOLTAGE . FAST RECOVERY TIME . TWO SEPARATED DIODE BRIDGES DESCRIPTION The L6210 is a monolithic IC containing eight Schottky diodes arranged as two separated diode


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    L6210 L6210 DIP16 P0WERD1P16 00b7L PDF

    L6210

    Abstract: No abstract text available
    Text: r ^ J S C S - T H O M S O N DUAL SCHOTTKY DIODE BRIDGE • MONOLITHIC ARRAY OF EIGHT SCHOTTKY DIODES ■ HIGH EFFICIENCY . 4A PEAK CURRENT ■ LOW FORWARD VOLTAGE ■ FAST RECOVERYTIME . TW O SEPARATED DIODE BRIDGES D E S C R IP T IO N The L6210 is a monolithic IC containing eight Schottky diodes arranged as two separated diode


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    L6210 PDF