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    DIODE L48 Search Results

    DIODE L48 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE L48 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC02D60SIC2 SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A,

    L4804A

    Abstract: SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V
    Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A, L4804A SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V

    DIODE 200A 600V schottky

    Abstract: SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode
    Text: Final SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC00D60SIC2 Q67050-A4201A101 Q67050-A4201A102 L4834A, DIODE 200A 600V schottky SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode

    SDP02S60

    Abstract: SWITCHING DIODE 600V 2A A102 diode sdp02s
    Text: Preliminary SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC00D60SIC2 SIDC00D60SIC2 Q67050-A4201sawn Q67050-A4201unsawn L4834A, SDP02S60 SWITCHING DIODE 600V 2A A102 diode sdp02s

    SPD06S60

    Abstract: diode schottky 600v infineon SIDC02D60SIC2 Carbide Schottky Diode
    Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC02D60SIC2 Q67050-A4162sawn Q67050-A4162unsawn L4814A, SPD06S60 diode schottky 600v infineon SIDC02D60SIC2 Carbide Schottky Diode

    SCHOTTKY 4A 600V

    Abstract: DIODE 200A 600V schottky
    Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC01D60SIC2 SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A, SCHOTTKY 4A 600V DIODE 200A 600V schottky

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC01D60SIC2 Q67050-A4161sawn Q67050-A4161unsawn L4804A,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC01D60SIC2 SIDC01D60SIC2 Q67050-A4161A1 Q67050-A4161A2 L4804A,

    SPD06S60

    Abstract: No abstract text available
    Text: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching


    Original     		PDF SIDC02D60SIC2 SIDC02D60SIC2 Q67050-A4162A1 Q67050-A4162A2 L4814A, SPD06S60

    Untitled

    Abstract: No abstract text available
    Text: BAT54WS SANGDEST MICROELECTRONICS SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0714, Rev. B Green Products BAT54WS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: • • • • • • • • • Low Turn-on Voltage Fast Switching PN Junction Guard Ring Transient and ESD Protection


    Original     		PDF BAT54WS N0714, BAT54WS OD-323, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: L4833J Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage40 Q Factor Min. f(co) Min. (Hz) Cut-off freq.70G P(D) Max. (W)3.0¥ Semiconductor MaterialSilicon Package StylePin


    Original     		PDF L4833J Voltage40

    Untitled

    Abstract: No abstract text available
    Text: L4834 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.3p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage40 Q Factor Min. f(co) Min. (Hz) Cut-off freq.2.5G P(D) Max. (W)5.0¥ Semiconductor MaterialSilicon Package StylePin


    Original     		PDF L4834 Voltage40

    Untitled

    Abstract: No abstract text available
    Text: L4833H Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage40 Q Factor Min. f(co) Min. (Hz) Cut-off freq.60G P(D) Max. (W)3.0¥ Semiconductor MaterialSilicon Package StylePin


    Original     		PDF L4833H Voltage40

    Untitled

    Abstract: No abstract text available
    Text: L4842 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.600f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.2.5G P(D) Max. (W)2.0¥ Semiconductor MaterialSilicon Package StylePin


    Original     		PDF L4842 Voltage60

    Untitled

    Abstract: No abstract text available
    Text: L4831H Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.250f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage40 Q Factor Min. f(co) Min. (Hz) Cut-off freq.60G P(D) Max. (W)1.0¥ Semiconductor MaterialSilicon Package StylePin


    Original     		PDF L4831H Voltage40

    Untitled

    Abstract: No abstract text available
    Text: L4856B Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.9.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W)5.0¥ Semiconductor MaterialSilicon Package StylePin


    Original     		PDF L4856B Voltage90

    Untitled

    Abstract: No abstract text available
    Text: L4824 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.3p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage24 Q Factor Min. f(co) Min. (Hz) Cut-off freq.2.5G P(D) Max. (W)5.0¥ Semiconductor MaterialSilicon Package StylePin


    Original     		PDF L4824 Voltage24

    Untitled

    Abstract: No abstract text available
    Text: V23990-P629-L48-PM V23990-P629-L48Y-PM V23990-P629-L49-PM V23990-P629-L49Y-PM datasheet flow BOOST 0 1200 V / 40 A Features flow 0 housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode


    Original     		PDF V23990-P629-L48-PM V23990-P629-L48Y-PM V23990-P629-L49-PM V23990-P629-L49Y-PM V23990-P629-L48-PM V23990-P629-L49-PM

    L4821A

    Abstract: No abstract text available
    Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		PDF SIDC03D30SIC2 SIDC03D30SIC2 32mm2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, L4821A

    L4821A

    Abstract: SPD10S30 A101 SIDC03D30SIC2
    Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		PDF SIDC03D30SIC2 Q67050-A4163sawn Q67050-A4163unsawn L4821A, L4821A SPD10S30 A101 SIDC03D30SIC2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		PDF SIDC03D30SIC2 SIDC03D30SIC2 32mm2 Q67050-A4163A1 Q67050-A4163A2 L4821A,

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original     		PDF SIDC03D30SIC2 32mm2 Q67050-A4163sawn Q67050-A4163unsawn L4821A,

    Untitled

    Abstract: No abstract text available
    Text: SHARP GL480/G L480Q/G L483Q Infrared Emitting Diode GL480/GL480Q GL483Q • Features 1. Narrow beam angle A0 : TYP. ± 13“ 2. Radiant flux ( e : MIN. 0.7m W at I f = 20m A ) 3. Compact, high reliability by chip coating (GL480Q/GL483Q) 4. Long lead type (GL483Q)


    OCR Scan     		PDF GL480/G L480Q/G L483Q GL480/GL480Q GL483Q GL480Q/GL483Q) GL483Q) PT480) GL480Q/GL483Q