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Abstract: No abstract text available
Text: 30-F2166BA150RW-L267G09 target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Brake Switch Copyright Vincotech 1 12 Mar. 2015 / Revision 1 30-F2166BA150RW-L267G09 target datasheet Brake Diode Brake Protection Diode Rectifier Diode Rectifier Diode
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30-F2166BA150RW-L267G09
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Abstract: No abstract text available
Text: 30-F2166BA150RW01-L267G19 target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Brake Switch Copyright Vincotech 1 12 Mar. 2015 / Revision 1 30-F2166BA150RW01-L267G19 target datasheet Brake Diode Brake Protection Diode Rectifier Diode Copyright Vincotech
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30-F2166BA150RW01-L267G19
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Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
O-220AC
STPSC10H065D
STPSC10H065DI
STPSC10H065B-TR
STPSC10H065G-TR
DocID023604
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Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
STPSC6H065D
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065
O-220AC
STPSC10H065D
STPSC10H065G-TR
DocID023604
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
O-220AC
STPSC6H065D
STPSC6H065DI
STPSC6H065B-TR
STPSC6H065G-TR
DocID023247
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Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC4H065
O-220AC
O-220AC
STPSC4H065D
STPSC4H065DI
DocID023598
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Untitled
Abstract: No abstract text available
Text: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC8H065
O-220AC
O-220AC
STPSC8H065D
STPSC8H065DI
STPSC8H065B-TR
STPSC8H065G-TR
DocID023603
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Untitled
Abstract: No abstract text available
Text: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC10H065-Y
DocID026618
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zd1 1014
Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky
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110VAC
ZPD40-512
zd1 1014
217F
C10A
C12A
capacitor ceramic
optocupler
transistor MTBF
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Abstract: No abstract text available
Text: SEMICONDUCTOR E35A23VDS, E35A23VDR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. E F FEATURES Average Forward Current : IO=35A. L2 Zener Voltage : 23V Typ. POLARITY E35A23VDS (+ Type) G C L1 D E35A23VDR (- Type)
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E35A23VDS,
E35A23VDR
E35A23VDS
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alternator diode 35a
Abstract: alternator diode E35A23VDR E35A23VDS
Text: SEMICONDUCTOR E35A23VDS, E35A23VDR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. E F FEATURES ᴌAverage Forward Current : IO=35A. L2 ᴌZener Voltage : 23V Typ. POLARITY E35A23VDS (+ Type) G C L1 D E35A23VDR (- Type)
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E35A23VDS,
E35A23VDR
E35A23VDS
alternator diode 35a
alternator diode
E35A23VDR
E35A23VDS
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217F
Abstract: resistor film transistor MTBF L2 diode 725
Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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ZPSA40-5
217F
resistor film
transistor MTBF
L2 diode 725
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ZPSA60-15
Abstract: FR 306 Diode 217F
Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-15 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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ZPSA60-15
ZPSA60-15
FR 306 Diode
217F
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217F
Abstract: ZPSA60-12 capacitor variable ceramic zd1 1014 105 capacitor
Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-12 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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ZPSA60-12
217F
ZPSA60-12
capacitor variable ceramic
zd1 1014
105 capacitor
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variable resistor 502
Abstract: OPTOCUPLER HAND BOOK 217F ZPSA40-24 zpsa40 capacitor Electrolytic
Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-24 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode, Fast 1 D2 6.1 Diode,General 1 BR1 6.1 Diode,General
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ZPSA40-24
variable resistor 502
OPTOCUPLER HAND BOOK
217F
ZPSA40-24
zpsa40
capacitor Electrolytic
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731 zener diode
Abstract: FR 309 diode 217F diode zener c5 R27A
Text: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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ZPSA60-5
731 zener diode
FR 309 diode
217F
diode zener c5
R27A
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L2 zener
Abstract: E30A23VPR E30A23VPS
Text: SEMICONDUCTOR E30A23VPS, E30A23VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=30A. E L2 Zener Voltage : 23V Typ. F1 POLARITY E30A23VPR (+ Type) (- Type) B L1 G E30A23VPS
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E30A23VPS,
E30A23VPR
E30A23VPS
L2 zener
E30A23VPR
E30A23VPS
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Abstract: No abstract text available
Text: SEMICONDUCTOR E25A2CPS, E25A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ᴌAverage Forward Current : IO=25A. ᴌReverse Voltage : 200V Min. POLARITY L2 E F1 E25A2CPS (+ Type) B L1 G E25A2CPR (- Type)
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E25A2CPS,
E25A2CPR
E25A2CPS
100mA
100mA,
100mS
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alternator diode
Abstract: alternator diode 50a E50A2CPS
Text: SEMICONDUCTOR E50A2CPS, E50A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=50A. E L2 Reverse Voltage : 200V Min. F1 L1 G POLARITY E50A2CPS (+ Type) B E50A2CPR (- Type)
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E50A2CPS,
E50A2CPR
E50A2CPS
100mA,
100mA
100ms
alternator diode
alternator diode 50a
E50A2CPS
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alternator diode 35a 9
Abstract: alternator diode alternator diode 35a
Text: SEMICONDUCTOR E35A2CPS, E35A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=35A. E Reverse Voltage : 200V Min. L2 F1 E35A2CPS (+ Type) L1 G POLARITY B E35A2CPR (- Type)
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E35A2CPS,
E35A2CPR
E35A2CPS
alternator diode 35a 9
alternator diode
alternator diode 35a
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DD3752
Abstract: No abstract text available
Text: L2E D NEC • bM275ES DD37521 b02 H N E C E LASER DIODE ELECTRONICS INC / NDL5070 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE PULSED LASER DIODE DESCRIPTION NDL5070 is a 1550 nm pulsed laser diode especially designed fo r optical measurement equipment OTDR . The DC PBH
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bM275ES
DD37521
NDL5070
NDL5070
ABSOLUT520
GG37522
DD3752
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DIODE T53
Abstract: NDL4103A b427525 NDL4103 T53 diode
Text: INECE b42?525 D037MbS TS3 L2E D LIGHT EMITTING DIODE N E C NDL4103A ELECTRONICS INC 8 5 0 nm O PTIC AL FIBER C O M M U N IC A T IO N S AIGaAs LIGHT EMITTING DIODE DESCRIPTION NDL4103A is an AIGaAs double heterostructure light emitting diode, especially designed for a light source fo r optical fiber
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D037MbS
NDL4103A
NDL4103A
b427525
00374b?
DIODE T53
NDL4103
T53 diode
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MDD 42-12-N1
Abstract: No abstract text available
Text: a s e a BRO üJN/ABB s e m i c o n Netz-Dioden-Module A3 D I GDMfl3Dfl □ □ □ D l ñ S T jp» •= 1 J - Diode Modules for mains frequency Daten pro D iode/data per diode /le s caractéristiques se rapportent à 1 diode I frms V rhm Ifavm l2t 10 ms
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K21-0120'
K21-0120
K21-0180
K21-0265
DD165,
DD220
MDD 42-12-N1
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