diode
Abstract: DD400S17K6CB2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung
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diode
Abstract: DD400S17K6CB2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung
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IR module
Abstract: DD400S17K6CB2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung
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DD400S17K6CB2
IR module
DD400S17K6CB2
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diode 1700v
Abstract: eupec igbt DIODE i2t DD400S17K6CB2 b2 diode DIODE B2 igbtmodules emcon diode
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung
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A5 DIODE
Abstract: A6 DIODE DIODE A6 A4 diode k6 diode k1 diode A3 DIODE S12 MARKING DIODE K4 diode KSD-D5H003-000
Text: ND102M6L Semiconductor Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]
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ND102M6L
12PDFN
KSD-D5H003-000
Rev00
A5 DIODE
A6 DIODE
DIODE A6
A4 diode
k6 diode
k1 diode
A3 DIODE
S12 MARKING DIODE
K4 diode
KSD-D5H003-000
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Untitled
Abstract: No abstract text available
Text: 660nm Coaxial Packaged Diode Laser K66S03F-0.01W K66S03F-0.02W K66S03F-0.06W K66S03F-0.10W Key Features： 10-100mW output power 105µm fiber core diameter 0.22NA 660nm wavelength Applications： Printing Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by
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660nm
K66S03F-0
10-100mW
k66s03f
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Untitled
Abstract: No abstract text available
Text: 635nm Coaxial Packaged Diode Laser K63S03F-0.002W K63S03F-0.005W K63S03F-0.015W K63S03F-0 .03W Key Features： 2mW-30mW output power 105µm fiber core diameter 0.22NA 635nm wavelength Applications： Printing Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by
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635nm
K63S03F-0
K63S03F-0
2mW-30mW
k63s03f
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VUB120-16NO2
Abstract: marking ntc 80
Text: VUB 120 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.1 V
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VUB120-12NO2
VUB120-16NO2
E72873
20101007a
120-12NO2
120-16NO2
120-12NO2T
120-16NO2T
marking ntc 80
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VUB160-16NOX
Abstract: No abstract text available
Text: VUB 160 Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = IC80 2.7 V IFSM = 1100 A IFSM = 200 A = 125 A VCEsat = 2.2 V
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VUB160-12NO2
VUB160-16NO2
E72873
20101007a
160-12NO2
VUB160-12NO2
160-16NO2
VUB160-16NO2
160-12NO2T
VUB160-16NOX
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VUB120-16NOX
Abstract: No abstract text available
Text: VUB 120 Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = IC80 2.7 V IFSM = 1100 A IFSM = 200 A = 100 A VCEsat = 2.1 V
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VUB120-12NO2
VUB120-16NO2
E72873
20101007a
120-12NO2
VUB120-12NO2
120-16NO2
VUB120-16NO2
120-12NO2T
VUB120-16NOX
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160-16NO2T
Abstract: VUB160-16NO2 160-12NO2 VUB160-16No2t E72873 VUB160-12NO2 marking ntc 160 vub16016no2 VUB160-16
Text: VUB 160 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.2 V
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VUB160-12NO2
VUB160-16NO2
E72873
20101007a
160-12NO2
VUB160-12NO2
160-16NO2
VUB160-16NO2
160-12NO2T
160-16NO2T
160-12NO2
VUB160-16No2t
E72873
marking ntc 160
vub16016no2
VUB160-16
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160-16NO2T
Abstract: VUB160-16NO2 VUB160-16NOX
Text: VUB 160 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.2 V
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VUB160-12NO2
VUB160-16NO2
E72873
20101007a
160-12NO2
160-16NO2
160-12NO2T
160-16NO2T
VUB160-16NOX
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VUB120-16NO2
Abstract: 120-12NO2 120-16NO2T VUB120-12NO2 12016N vub120-16NO2t E72873 Ultrafast Recovery Rectifier Bridge VUB 120 120-16NO2
Text: VUB 120 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.1 V
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VUB120-12NO2
VUB120-16NO2
E72873
20101007a
120-12NO2
VUB120-12NO2
120-16NO2
VUB120-16NO2
120-12NO2T
120-12NO2
120-16NO2T
12016N
vub120-16NO2t
E72873
Ultrafast Recovery Rectifier Bridge
VUB 120
120-16NO2
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Untitled
Abstract: No abstract text available
Text: 660nm Coaxial Packaged SM Diode Laser K66S03F-0.005W-S K66S03F-0.03W-S K66S03F-0.05W-S Key Features： 5-50mW output power 4µm fiber core diameter 0.13NA 660nm wavelength Applications： Printing Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by
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660nm
K66S03F-0
05W-S
5-50mW
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SMA 905 fiber dimensions
Abstract: K66S03F-0 laser diode 660nm 0005W
Text: 660nm Coaxial Packaged SM Diode Laser K66S03F-0.005W-S K66S03F- 0.015W-S K66S03F-0.03W -S K66S03F-0.05W -S Key Features： 5-50mW output power 4µm fiber core diameter 0.13NA 660nm wavelength Applications： Printing Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by
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660nm
K66S03F-0
05W-S
K66S03F-
15W-S
5-50mW
k66s03f-s
SMA 905 fiber dimensions
laser diode 660nm
0005W
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Untitled
Abstract: No abstract text available
Text: 660nm HHL Packaged SM Diode Laser K66S06F-0.050W-S K66S06F-0.080W-S Key Features： 660nm wavelength 50mW, 80mW output power 4µm fiber core diameter 0.13NA Singlemode Fiber Applications： Printing Biochemical Analysis Scientific BWT Beijing’s High Power Diode Laser Modules are manufactured by
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660nm
K66S06F-0
50W-S
80W-S
k66s06f-s
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Untitled
Abstract: No abstract text available
Text: 660nm HHL Packaged SM Diode Laser K66S06F-0.050W-S K66S06F-0.080W-S Key Features： 660nm wavelength 50mW, 80mW output power 4µm fiber core diameter 0.13NA Singlemode Fiber Applications： Printing Biochemical Analysis Scientific BWT Beijing’s High Power Diode Laser Modules are manufactured by
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660nm
K66S06F-0
50W-S
80W-S
k66s06f
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Untitled
Abstract: No abstract text available
Text: 635nm Coaxial Packaged SM Diode Laser K63S03F-0.001W-S K63S03F-0.002W-S K63S03F-0.01W-S K63S03F-0.02W-S Key Features： 1-20mW output power 4µm fiber core diameter 0.13NA 635nm wavelength Applications： Printing Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by
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635nm
K63S03F-0
01W-S
02W-S
1-20mW
/bwt/635nm-650nm/k63so3f-s
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Untitled
Abstract: No abstract text available
Text: 635nm Coaxial Packaged SM Diode Laser K63S03F-0.001W-S K63S03F-0.002W-S K63S03F-0.01W-S K63S03F-0.02W-S Key Features： 1-20mW output power 4µm fiber core diameter 0.13NA 635nm wavelength Applications： Printing Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by
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635nm
K63S03F-0
01W-S
02W-S
1-20mW
k63s03f-s
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DDB6U75N16YR
Abstract: No abstract text available
Text: Technische Information / technical information DDB6U75N16YR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! $ 1 0 30 0 % ; " #$ % # &' 01 # $ 2% 0 3 0 0
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DDB6U75N16YR
DDB6U75N16YR
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DDB2U30N08VR
Abstract: No abstract text available
Text: Technische Information / technical information DDB2U30N08VR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! "# $ " &' *+, 12 % " # 3$ 1 4 1 1 # 2 1 41 1
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DDB2U30N08VR
DDB2U30N08VR
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Abstract: No abstract text available
Text: Technische Information / technical information DDB6U75N16YR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! $ 1 0 30 0 % ; " #$ % # &' 01 # $ 2% 0 3 0 0
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DDB6U75N16YR
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Abstract: No abstract text available
Text: Technische Information / technical information FF450R12ME3 IGBT-Module IGBT-modules EconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL™ module with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter
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FF450R12ME3
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