Untitled
Abstract: No abstract text available
Text: Hot Pluggable X9522 Preliminary Information Laser Diode Control for Fiber Optic Modules Triple DCP, Dual Voltage Monitors FEATURES DESCRIPTION • Three Digitally Controlled Potentiometers DCPs —64 Tap - 10 kΩ —100 Tap - 10 kΩ —256 Tap - 100 kΩ
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X9522
X9522
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Untitled
Abstract: No abstract text available
Text: Hot Pluggable X9522 Preliminary Information Laser Diode Control for Fiber Optic Modules Triple DCP, Dual Voltage Monitors FEATURES DESCRIPTION • Three Digitally Controlled Potentiometers DCPs —64 Tap - 10 kΩ —100 Tap - 10 kΩ —256 Tap - 100 kΩ
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X9522
X9522
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DCP100
Abstract: X9522 X9522B20I-A X9522B20I-B
Text: Hot Pluggable X9522 Preliminary Information Laser Diode Control for Fiber Optic Modules Triple DCP, Dual Voltage Monitors FEATURES DESCRIPTION • Three Digitally Controlled Potentiometers DCPs —64 Tap - 10 kΩ —100 Tap - 10 kΩ —256 Tap - 100 kΩ
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X9522
X9522
DCP100
X9522B20I-A
X9522B20I-B
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Untitled
Abstract: No abstract text available
Text: Hot Pluggable X9522 Preliminary Information Laser Diode Control for Fiber Optic Modules Triple DCP, Dual Voltage Monitors FEATURES DESCRIPTION • Three Digitally Controlled Potentiometers DCPs —64 Tap - 10 kΩ —100 Tap - 10 kΩ —256 Tap - 100 kΩ
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X9522
X9522
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X9522
Abstract: X9522B20I-A X9522B20I-B
Text: Hot Pluggable X9522 Preliminary Information Laser Diode Control for Fiber Optic Modules Triple DCP, Dual Voltage Monitors FEATURES DESCRIPTION • Three Digitally Controlled Potentiometers DCPs —64 Tap - 10 kΩ —100 Tap - 10 kΩ —256 Tap - 100 kΩ
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X9522
X9522
X9522B20I-A
X9522B20I-B
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DCP100
Abstract: X9522 X9522B20I-A X9522B20I-B
Text: Hot Pluggable X9522 Preliminary Information Laser Diode Control for Fiber Optic Modules Triple DCP, Dual Voltage Monitors FEATURES DESCRIPTION • Three Digitally Controlled Potentiometers DCPs —64 Tap - 10 kΩ —100 Tap - 10 kΩ —256 Tap - 100 kΩ
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X9522
X9522
DCP100
X9522B20I-A
X9522B20I-B
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smd code marking A8 diode
Abstract: smd diode A8 smd diode code a8
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BAP50-03 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 Philips Semiconductors Product specification General purpose PIN diode BAP50-03 FEATURES PINNING • Low diode capacitance
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M3D049
BAP50-03
OD323
MAM406
OD323)
125004/00/02/pp8
smd code marking A8 diode
smd diode A8
smd diode code a8
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diode super fast
Abstract: No abstract text available
Text: Outline äfWTctf /*1? —r / W M i 7 lJ 7 n ztf'f* - t - K, > 3 7 K, □ - Shindengen has an abundance of power devices, such :, m as bridge diode, super fast recovery diode, schottky K, MOSFETi^pq barrier diode, Muliti-purpose single diode, power transistor
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diode ja8
Abstract: No abstract text available
Text: ESJA88 6kv, 8 k V K * J E S a y - i* - K • «•»■ + * : Outline Drawings HIGH VOLTAGE SILICON DIODE s * iiW t t # ii* - ^ K s * E K * * - f* - K T T o E S JA 8 8 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa
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ESJA88
ESJA88-06
ESJA88-08
I95t/R89)
diode ja8
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MIB57TA-J
Abstract: MIB57TA-K
Text: MIB57TA-J MIB57TA-K CRO DESCRIPTION INFRARED EMITTING DIODE 04.98 ' 0.196 MIB57TA-J and MIB57TA-K are GaAlAs infrared emitting diode molded in a 5mm diameter clear transparent lens. 8.7 (0.34) 1.0 ,r (0 .04) //* // ft ^ - 1 w \\ \>k #1.8 ? \\ 0.75(0.03)_
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MIB57TA-J
MIB57TA-K
MIB57TA-K
100mA
175mW
MI857TA-J
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saia
Abstract: ESJA98 ESJA98-06 ESJA98-08
Text: E S J 9 A 8 6 k v , 8 k v t K ± ' i Kw i 3? ' f k •W B'+sS : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA98I*, fcl ESJA98 is high reliability resin molded type high seepd hig voltage diode in small size package which is sealed multilayed mesa type silicon chip by epoxy resin.
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ESJA98
ESJA98&
saia
ESJA98-06
ESJA98-08
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: t - K 77+ '> + ;U 5 f'T ^ -K Super Fast Recovery Diode Axial Diode U ïW ^ïfèm OUTLINE DIMENSIONS D1NL40 400V 0.9A • e / ^ x # trr5 0 n s ffl « •SR «f mzpo-n-^iv 0m m . OA. »TO • a « . «¡s. f a • Æ tè H RATINGS Absolute Maximum Ratings h
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D1NL40
SHINDENGEN DIODE
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LT 2806
Abstract: trr M7 diode dc m7 pnp 855 1SS123 JT MARKING 1SS12
Text: z r — •$? • y — h NEC X " f y 3- > 'J $'<4 K Switching Diode 1SS123 w .n & M x t ° ^ = ¥ v 7 7; u i i v f; = i > ^ 7 ; u ^ y ^ - - k w & T s 'iv + y v m Silicon Epitaxial Double Diode (Series Connected) High Speed Switching W& / PACKAGE DIMENSIONS
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1SS123
LT 2806
trr M7
diode dc m7
pnp 855
1SS123
JT MARKING
1SS12
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MIB57TA-J
Abstract: MIB57TA-K
Text: CKO MIB57TA-K INFRARED EMITTING DIODE 04.98 ' 0.196 DESCRIPTION MIB57TA-J and MIB57TA-K are GaAlAs infrared emitting diode molded in a 5mm diameter clear transparent lens. 8.7 (0.34) 1.0 ,r(0 .0 4 ) 05,8 (0.23} 0.75(0.03). °3)_J max.;. If 25.3 (0.93} 0.5
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MIB57TA-K
MIB57TA-J
MIB57TA-K
100mA
175mW
MIB57TA-J
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Untitled
Abstract: No abstract text available
Text: v a -y V J 7 & 4 * - K 7 Schottky Barrier Diode 1 Twin Diode OUTLINE DIMENSIONS D5SC4MR C ase : ITO -220 40V 5A • T jl5 0 t! • P rrsm 7 G V ' > i S i K • 7 J IÆ -J U K •S R S S •D C /D C D > K -^ • * Æ , V - h . OAtSÜ m •aa. • Æ fê g l
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Untitled
Abstract: No abstract text available
Text: P D -9.1648 International ÏQ R Rectifier IRF7524D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a or 33 K a err HP K
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IRF7524D1
Rf7524d1
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ESJA92
Abstract: ESJA92-10 T151 high voltage diode 100 kv esja 212es 12KV 2ma
Text: ESJ A92 1 O k v , 1 2 k V : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA92i±p ESJA92 is high reliability resin molded type high speed high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. : Features
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ESJA92
ESJA92lÂ
I95t/R89)
Shl50
ESJA92-10
T151
high voltage diode 100 kv
esja
212es
12KV 2ma
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Untitled
Abstract: No abstract text available
Text: y a 7 h Surface Mounting Device U T7# -< % — K Schottky Barrier Diode _ Twin Diode IWJfê vhÆE] OUTLINE DIMENSIONS DF20SC9M 90V 2QA KEUM •S M D •T j 150t; #Phhsm Tl K^ y' J i S à l •SR» • D c /D c _ iv n - ÿ • * « . y -A . 0A «ü •aïs.
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DF20SC9M
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Untitled
Abstract: No abstract text available
Text: v a -y K yom Schottky Barrier Diode Twin Diode M$W vh'ÆH OUTLINE DIMENSIONS SF10SC4R 4 0 V 10A • T j 150TC • P rrsm SI •» S B Œ 2 K V S IŒ •S R g à • D C /D C Z IV A '-Î? y - A . 0A«Ë§ • a n , K -5 > v > \;w m • Æ tëH RATINGS •ÎÈ fc liS ^ ïE lfë
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SF10SC4R
150TC
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode W tm SF5S4 40V OUTLINE fk K g IB M Feature • Tj=150°C • Tj=150°C • PRRSM T ’A ' i ^ V Î ' I ' K i E • P rrsm • 71 [ Æ - J U K • Full Molded • Dielectric Strength 2kV • l Ë S I f f i 2 kV S ï l
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Schottky Diode s30sc4m
Abstract: SHINDENGEN DIODE s30sc4m
Text: y 3 y h * / \ ' U 7 K "J O i Twin Diode Schottky Barrier Diode OUTLINE DIMENSIONS S30SC4M Case : MT0-3P 40V 30A •T j # P • 1sot; x S K hhsm e jc ô '/ j'S L i •xmmm « ì* • S R S ig • D C /D C n ^ A -^ •mm, v-u. •a«. /K • Ë të ft o a# ü
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S30SC4M
0000r
Schottky Diode s30sc4m
SHINDENGEN DIODE
s30sc4m
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SHINDENGEN DIODE
Abstract: No abstract text available
Text: ' > 3 7 S ^ r/'Î U 77 ^ V ^ — K v -o m Twin Diode Schottky Barrier Diode OUTLINE DIMENSIONS D30SC4M C ase : ITO -3P 40V 30A 1 • T j 15 0 ’C •PnnSM T \ ' ^ y - y z I S s ì •B :£ 7 J IÆ -;U K m & D © •S R S * •D C /D C n > A -$ ' m mmm. ? - k . oAmm
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D30SC4M
SHINDENGEN DIODE
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Untitled
Abstract: No abstract text available
Text: î / a y h * - A'UT7S H 'Î-K —KïS'n.— i> Diode Module Schottky Barrier Diode OUTLINE DIMENSIONS D180SC4M 40 V 180 A Ib J u - l • À ü ï i ' i - ll> • f f iV F •e jc ô '/jv ïïu F I •* § k S R S ;H •D C /D C 0 ^ M o y t ^ iL — S' •
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D180SC4M
D180SC4M
100ns,
J515-5
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Untitled
Abstract: No abstract text available
Text: y3y h * A ' U K K iv a - J I/ Schottky Barrier Diode Diode Module OUTLINE DIMENSIONS D360SC7M Case : Modules 70V 360A • ^ s a ty a - jL / • ffiVF • e jc w s u •* S R S S •D C /D C • I C x T . Î '- RATINGS • Îë ftlI^ Ü Ë fë m A bso lu te M axim um Ratings
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D360SC7M
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