DIODE JS.9 smd
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m tm OUTLINE Package : STO-220 DF40SC4 u^hàLÌ°- M 40V m U nit-m m W eight 1.5g (T y p ) 10.2 DA Feature a • SMD < • Tj=150°C 1Tj=150°C • P rrsm 1 P rrs m Rating SMD 1 High lo Rating -Small-PKG 4.7 m Main Use
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STO-220
DF40SC4
DIODE JS.9 smd
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D 92 M - 02 DIODE
Abstract: JS marking diode c 92 M - 02 DIODE
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF20PC3M PyhfLig- ffl Unit-mm Weight 1.5g(Typ) 10.2 30V 20A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M 4.7
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STO-220
DF20PC3M
D 92 M - 02 DIODE
JS marking diode
c 92 M - 02 DIODE
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smd diode marking U10
Abstract: Diode marking TY smd diode marking B3 smd diode HB
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30SC4M u^hàLÌ°- M 40V m Feature a <SMD • Tj=150°C 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • P rrsm DC/D C 4.7 Main Use it 1Switching Regulator 1DC/DC Converter 1Home Appliance, Game, Office Automation
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STO-220
DF30SC4M
smd diode marking U10
Diode marking TY
smd diode marking B3
smd diode HB
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CIE1931
Abstract: No abstract text available
Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SYKQWDF-AMT ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Super Bright Yellow White Description The Super Bright Yellow device is made with AlGaInP on GaAs substrate light emitting diode chip.
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APTB1612SYKQWDF-AMT
196m/s²
48min
DSAL3634
NOV/09/2010
CIE1931
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CIE1931
Abstract: No abstract text available
Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612CGKQWDF-AMT ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Green White Description The Green source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode.
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APTB1612CGKQWDF-AMT
2000pcs
196m/s²
48min
DSAL3635
NOV/09/2010
CIE1931
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PDF
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smd ya transistor
Abstract: CIE1931
Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SURKQWDF-AMT ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Hyper Red White Description The Hyper Red source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode.
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APTB1612SURKQWDF-AMT
196m/s²
48min
DSAL3633
NOV/09/2010
smd ya transistor
CIE1931
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smd diode marking sm 34
Abstract: No abstract text available
Text: Schottky Barrier Diode mtmm Single Diode o u t l in e M2FH3 30V 6A Feature 1Small SMD ' Super-Low V f = 0 .3 6 V • /JvS Ü S M D • tliafîV F = 0.36V Main Use • i K y z r U —jS JS K it • DC/DC n y j { - 5 > • Reverse connect protection for DC power source
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spice germanium diode
Abstract: SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100
Text: GENERAL Page Quality 2 Pro Electron type numbering system 2 Rating systems 3 Letter symbols 4 S-parameter definitions 7 Equivalent package designators 8 Transistor ratings 8 Thermal considerations 11 Power derating curves for SMDs Power derating curve for SOT23
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OT143
SC-59
SC-70
SC-88
SC-75
OT223
BD839.
O-202
spice germanium diode
SNW-EQ-611
PXTA14
sot89 JB
TRANSISTOR SMD letter CODE PACKAGE SOT23
BSP15
BSP19
BST60
germanium transistor pnp
MDA100
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10SC4 Unit-mm Weight 0.326g Typ 40 V 10A Feature • SM D >SMD • Tj=150°C 1Tj=150°C • P r r s m T ’A ' ^ V S ' i f S l i E 1 P r r s m Rating 1 High lo Rating -Small-PKG Main Use
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DE10SC4
15CTC
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY DIODES BAT64, BAT64-04 BAT64-05, BAT64-06 SOT-23 Formed SMD Package BAT64 BAT64-04 3 3 3 3 Pin Configurat ion Pin Configurat ion 1 = ANODE 2 = CATHODE
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BAT64,
BAT64-04
BAT64-05,
BAT64-06
OT-23
BAT64
BAT64-05
BAT64
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BAT64
Abstract: BAT64-04 BAT64-05 BAT64-06 sot-23 diode marking Av WT sot23 bat64 smd
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY DIODES BAT64, BAT64-04 BAT64-05, BAT64-06 SOT-23 Formed SMD Package BAT64 BAT64-04 3 3 3 3 Pin Configuration Pin Configuration 1 = A N ODE 2 = CATHODE
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BAT64,
BAT64-04
BAT64-05,
BAT64-06
OT-23
BAT64
BAT64-05
BAT64
BAT64-04
BAT64-05
BAT64-06
sot-23 diode marking Av
WT sot23
bat64 smd
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SMD BR 17
Abstract: bat64 smd BAT64-05 smd JS 5 355 sot-23 BAT64 BAT64-04 BAT64-06 Schottky Diode Marking sot-23 marking 415 sot23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY DIODES BAT64, BAT64-04 BAT64-05, BAT64-06 SOT-23 Formed SMD Package BAT64 BAT64-04 3 3 3 3 Pin Configuration Pin Configuration 1 = A N ODE 2 = CATHODE
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BAT64,
BAT64-04
BAT64-05,
BAT64-06
OT-23
BAT64
BAT64-05
BAT64
SMD BR 17
bat64 smd
BAT64-05
smd JS 5
355 sot-23
BAT64-04
BAT64-06
Schottky Diode Marking sot-23
marking 415 sot23
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DIODE S4 65
Abstract: smd diode a5 smd transistor marking A5 A5 DIODE DIODE marking S4 04 Diode S4 DIODE a5 DIODE marking S4 S4 DIODE smd diode S4
Text: Diodes SMD Type General purpose PIN diode BAP51-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Low diode capacitance Low diode forward resistance. 0.77max +0.05 0.1-0.02 0.07max +0.1 1.6-0.1 Absolute Maximum Ratings Ta = 25
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BAP51-02
OD-523
77max
07max
DIODE S4 65
smd diode a5
smd transistor marking A5
A5 DIODE
DIODE marking S4 04
Diode S4
DIODE a5
DIODE marking S4
S4 DIODE
smd diode S4
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Untitled
Abstract: No abstract text available
Text: P _ SMDA05C-5 S E M T 1 E H H Today’s Results.Tomorrow^ Vision February 11, 1999 300 Watt Surface Mount TVS Array th ru SMDA24C-5 TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES The SMDAxxC-5 series of transient voltage
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SMDA05C-5
SMDA24C-5
12x16
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Untitled
Abstract: No abstract text available
Text: SIEMENS SPU04N60S5 SPD04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity
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SPU04N60S5
SPD04N60S5
SPUx6N60S5/SPDx6N60S5
SPU04N60S5
P-T0251
04N60S5
Q67040-S4228
P-T0252
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20n60s5
Abstract: transistor 20N60s5 20n60s5 power transistor n60s5
Text: SIEMENS SPP20N60S5 SPB20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R 0S 0n in TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances
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SPP20N60S5
SPB20N60S5
N60S5/SPBx1
N60S5
SPP20N60S5
P-T0220-3-1
P-T0263-3-2
20N60S5
20n60s5
transistor 20N60s5
20n60s5 power transistor
n60s5
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Untitled
Abstract: No abstract text available
Text: SIEMENS SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • W orldw ide best Ros on in TO-251 and TO -252 • Ultra low gate charge • Periodic avalanche proved • Extrem e d v/d t rated • O ptim ized capacitances
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SPU07N60S5
SPD07N60S5
O-251
SPU07N60S5
P-T0251
07N60S5
Q67040-S4196
P-T0252
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FAG 32 diode
Abstract: No abstract text available
Text: SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity
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SPP04N60S5
SPB04N60S5
SPPx6N60S5/SPBx6N60S5
P-T0220-3-1
04N60S5
Q67040-S4200
P-T0263-3-2
FAG 32 diode
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Untitled
Abstract: No abstract text available
Text: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A
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SPD02N60
SPU02N60
VPT09050
P-T0252
Q67040-S4133
P-T0251
Q67040-S4127-A2
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02N60S5
Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5
Text: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity
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SPU02N60S5
SPD02N60S5
SPUx5N60S5/SPDx5N60S5
SPU02N60S5
P-T0251
02N60S5
Q67040-S4226
P-T0252
02N60S5
SMD TRANSISTOR MARKING 02N
SPD02N60S5
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Untitled
Abstract: No abstract text available
Text: SIEMENS SPP02N60S5 SPB02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity
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OCR Scan
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SPP02N60S5
SPB02N60S5
SPPx5N60S5/SPBx5N60S5
P-T0220-3-1
02N60S5
Q67040-S4181
P-T0263-3-2
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diode S4 05
Abstract: smd diode S4 diode smd JS 8 BAP51-02
Text: General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE
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BAP51
OD523
SC-79
diode S4 05
smd diode S4
diode smd JS 8
BAP51-02
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DIODE JS.9 smd
Abstract: No abstract text available
Text: SIEMENS SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity
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SPP03N60S5
SPB03N60S5
SPPx4N60S5/SPBx4N60S5
P-T0220-3-1
03N60S5
Q67040-S4184
P-T0263-3-2
DIODE JS.9 smd
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BAP51-02
Abstract: smd diode S4 diode S4 05 AS 15 f
Text: LESHAN RADIO COMPANY, LTD. General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79
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BAP51
OD523
SC-79
BAP51-02
smd diode S4
diode S4 05
AS 15 f
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