2N1479
Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863
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O-39/TO-5
D00D1SS
515TQft
2N1479
2N1480
2N1481
2N1482
2N1700
2N5784
2N5785
2N5781
2N5782
2N5786
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Untitled
Abstract: No abstract text available
Text: ERC80M-004 5A SCHOTTKY BARRIER DIODE : Features In sulated p a cka g e by fu lly m o ld in g . • te V r L o w V f- • x -f C o n n e c tio n D ia g ra m S u p e r h ig h speed s w itc h in g . • y \y-±-stmt- jr&ftftiitt H igh re lia b ility by p la n e r d e s ig n .
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ERC80M-004
500ns
10----------c
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JR224575
Abstract: diode jr 702
Text: POWEREX 3=]E D I NC TS'iMbSl DGQMSbS b IPRX / o m tE X JQ224575/JQ225075 JR224575/JR225075 P o w e re x , In c ., W ills S tre e t, Y o u n g w o o d , P en n sylvan ia 1 5 6 9 7 4 1 2 9 2 5 -7 2 7 2 Single Chopper FETMOD Power Modules P ow erex Europe, S .A ., 4 2 8 A ven u e G. D urand, B P 107, 7 2 0 0 3 Le Mans, France (4 3 ) 4 1 .1 4 .1 4
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JQ224575/JQ225075
JR224575/JR225075
Amperes/450-500
JQ225075
peres/450-500
JR224575
diode jr 702
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n fet 60v 50a
Abstract: 4441 mosfet 4441 equivalent
Text: F U JI 2SK2809-01 MR N -c h a n n e l M O S -F E T tM L lM E l/U G ilK F A P -IIIB S e r ie s 60 V 0 ,0 1 Q 50A 50W > Features - High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier
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2SK2809-01
G004732
00DM733
n fet 60v 50a
4441 mosfet
4441 equivalent
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74LS690
Abstract: D04G321
Text: SbE » • /S T 7^237 DQMD317 10b ■ S G T H _ 7 '-9 S ‘2 S C S -T H O M S O N K K ^ fo m K g M M S 3 tt M 5 4 /7 4 H C 6 9 0 M 5 4 /7 4 H C 6 9 1 HC690 DECADE COUNTER/REGISTER 3-STATE HC691 4-BIT BINARY COUNTER/REGISTER (3-STATE) S G S-THONSON ■ HIGH SPEED
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DQMD317
HC690
HC691
33MHz
004D32J1
74LS690
D04G321
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Untitled
Abstract: No abstract text available
Text: F U JI eiLSiEirijtìue 2SK2494-01 N-channel MOS-FET F-l Series 60V > Features 0.025Q T O -2 2 0 A B 10 î j ' 4.5 ±oi 03.6t}2 11.32 > Applications U i O.B-O! - Motor Control - General Purpose Power Amplifier - DC-DC converters 254 > Maximum Ratings and Characteristics
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2SK2494-01
20Kii)
0-41P
60-Resistance
QGDMb31
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Untitled
Abstract: No abstract text available
Text: p u jr i 2SK2215-01 L,S N-channel MOS-FET FAP-IIA Series > Features - 600V 1 ,2 Q 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications -
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2SK2215-01
/120V
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30A high speed diode
Abstract: No abstract text available
Text: TS808C04 30 a '> 3 * y l) 7 ? *< t — K SCHOTTKY BARRIER DIODE : Features Surface m ount device- • i£ V F Low V f Connection Diagram Super high speed sw itching. •yu—t -ttwus Aiiffitt High reliability by planer design. : Applications High speed power sw itching.
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TS808C04
500ns,
30A high speed diode
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2SK2758-01L
Abstract: 2U 73 diode
Text: FU JI 2SK2758-01L,S N-channel MOS-FET FAP-IIS Series > Features - 50 0V 0 ,9 Q 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated T-RA.CK S
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2SK2758-01L
00047DS
2U 73 diode
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Untitled
Abstract: No abstract text available
Text: 1-Pack IGBT 1MBI600NP-060 IGBT MODULE N series '& Outline Drawing • Features Square RBSOA • Low Saturation Voltage • Less Total Pow er Dissipation • Im proved F W D Characteristic • Minim ized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times R ated Current)
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1MBI600NP-060
Temperature000
D-60528
702708-Dallas,
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2SK2759-01R
Abstract: No abstract text available
Text: FUJI 2SK2759-01R s ta is ir itìu e FAP-IIS Series N-channel MOS-FET 500V 0,55Q 15A 80W > Features - > Outline Drawing TO-3PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated
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2SK2759-01R
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Untitled
Abstract: No abstract text available
Text: Fe'iUMçiruâüÉ U JI 2SK2649-01R N-channel MOS-FET FAP-IIS Series 800V 9A High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 55 3.5 > Applications - 0.6 Switching Regulators
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2SK2649-01R
Tc-25
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rkm 20
Abstract: 2SK2523-01
Text: F U JI [É n U M c ir ^ U K 2SK2523-01 N-channel MOS-FET 450V IQ I 9 A I 6 0 W FAP-II Series > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof
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2SK2523-01
O-220AB
20Kil)
rkm 20
2SK2523-01
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523A7T5
Abstract: No abstract text available
Text: FU JI 2SK2764-01R N-channel MOS-FET FAP-IIS Series 800V > Features - High Speed Switching - Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 4 fí 4A 80W > Outline Drawing TO-3PF > Applications
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2SK2764-01R
0DD4715
523A7T5
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mosfet ssd
Abstract: soik
Text: 2SK2762-01 L,S F U JI N-channel MOS-FET FAP-IIS Series > Features - 800V 4Q 4A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications
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2SK2762-01
GGDM713
mosfet ssd
soik
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Untitled
Abstract: No abstract text available
Text: FUJI 2SK2691-01R N-channel MOS-FET IS U J M s u ltìU K FAP-IIIB Series 60V > Features 0,0 I Q 70A 100W Outline Drawing TO-3PF - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 5.5 .35 > Applications - Motor Control
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2SK2691-01R
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VIP 100A
Abstract: 2SK2770-01 doom
Text: P U 2SK2770-01 J 1 E ïïïS D E N-channel MOS-FET 900V 5,5Q 3,5A 100W FAP-IIS Series > Features - Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated
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2SK2770-01
VIP 100A
doom
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Untitled
Abstract: No abstract text available
Text: FF 400 R 06 KL 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Thermal properties 0,0345°C/W 0,069 °C/W 0,02 °C/W 0,04 °C/W DC, pro B a u ste in /p e r module DC, pro Zweig /p e r Arm pro Baustein / per module Electrical properties
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PWWR60CKF6
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CY74FCT2257AT
Abstract: CY74FCT2257CT CY74FCT2257CTQC CY74FCT2257CTSOC CY74FCT2257T
Text: fax id: 7021 —— — Æ jr r ~ 'f V D D 17 Q CY74FCT2257T Q I 1 IT COO Quad 2-Input Multiplexer Features Functional Description Function and pinout compatible with FCT and F logic 250 . output series resistors to reduce transmission line reflection noise
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current15
CY74FCT2257T
FCT2257T
CY74FCT2257AT
CY74FCT2257CT
CY74FCT2257CTQC
CY74FCT2257CTSOC
CY74FCT2257T
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QM6001
Abstract: 6004ST diode jr 702 OM6002ST diode t25 4 L0 lateral mosfet audio amplifier OM6001ST OM6003ST OM6004ST OM6101ST
Text: OM6001ST OM6003ST OM6101ST OM6103ST OM6002ST OM6004ST QM6102ST OM61Q4ST POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-257AA PACKAGE 100V Thru 500V, Up To 14 Amp, N-Channel MOSFET With Or Without Zener Gate Clamp Protection FEATURES • • • • Isolated Hermetic Metal Package
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OM6001ST
OM6003ST
OM6101ST
OM6103ST
OM6002ST
OM6004ST
QM6102ST
OM61Q4ST
O-257AA
MIL-S-19500,
QM6001
6004ST
diode jr 702
diode t25 4 L0
lateral mosfet audio amplifier
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C70r
Abstract: IT2101
Text: MITSUBISHI TRANSISTOR MODULES \ QM75TF-HB | —mmm^ HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM D im e n s io n s in m m 102 ± 0.3 4-$5.5 7-M 4
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QM75TF-HB
150mA*
C70r
IT2101
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CY74FCT2374AT
Abstract: CY74FCT2374CT CY74FCT2374T CY74FCT2574AT CY74FCT2574T
Text: fax id: 7028 CY74FCT2374T CY74FCT2574T — —— Æ r~'fV D D 17 Q Q jr I 1 IT C O O 8-Bit Registers Features Functional Description Function and pinout compatible with FCT and F logic 250 . output series resistors to reduce transmission line reflection noise
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CY74FCT2374T
CY74FCT2574T
FCT2374T
FCT2574T
20-Lead
20-Lead
300-Mil)
CY74FCT2374AT
CY74FCT2374CT
CY74FCT2374T
CY74FCT2574AT
CY74FCT2574T
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MMD7000
Abstract: MMD6050 MMD6100 MMD6150 D7000
Text: MMD6050 silicon MMD6100 MMD6150 Silicon epitaxial micro-miniature switching diodes — single, series and dual diodes designed forgeneral-purpose, MMD7000 high-speed switching applications. M M D 6 0 5 0 - Case 166 M M 0 6 1 0 0 - Case 28 (2) M M D 6 1 5 0 - Case 28 (3)
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mmd6050
mmd6100
mmd6150
mmd7000
MMD6050
MMD7000
100mA
D7000
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zener diode B340
Abstract: Transistor b340 b337 b338 JV13 feme 1DI300MN-120 600ADC
Text: 1DI300MN-120 300A y < rJ — y =7 : Outline Drawings }U POWER TRANSISTOR MODULE : Features • hFE^'fSi' High DC Current Gain • - K rt* • *S!lSfaffli*liE*rifc : Applications 9 • General Purpose Inverter • Uninterruptible Power Supply • N Servo & Spindle Drive for NC Machine Tools
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1DI300MN-120
E82988
11S1W
l95t/R89
zener diode B340
Transistor b340
b337
b338
JV13
feme
600ADC
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