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    DIODE JR 702 Search Results

    DIODE JR 702 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE JR 702 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    psu 300 switch mode power supply

    Abstract: optocoupler MTBF calculation 220vac to 12vdc circuit diagram PowerDsine automatic switch over circuit diagram PSU 200 an 7024 h11l1sd "Power over LAN" PD-IM-7024
    Text: PD-IM-7024 Power over LANTM Module Revision 002 Last modified – June 2, 2002 SYSTEM FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ TM Complete, self-contained Power over LAN integrated solution Combines Power over LAN and Power Supply Unit capabilities


    Original
    PD-IM-7024 PD-IM-7024 MOLEX-90325-12P 100uSEC psu 300 switch mode power supply optocoupler MTBF calculation 220vac to 12vdc circuit diagram PowerDsine automatic switch over circuit diagram PSU 200 an 7024 h11l1sd "Power over LAN" PDF

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


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    O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786 PDF

    ALY TRANSISTOR

    Abstract: 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY 2N1479
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


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    O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 ALY TRANSISTOR 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY PDF

    Untitled

    Abstract: No abstract text available
    Text: ERC80M-004 5A SCHOTTKY BARRIER DIODE : Features In sulated p a cka g e by fu lly m o ld in g . • te V r L o w V f- • x -f C o n n e c tio n D ia g ra m S u p e r h ig h speed s w itc h in g . • y \y-±-stmt- jr&ftftiitt H igh re lia b ility by p la n e r d e s ig n .


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    ERC80M-004 500ns 10----------c PDF

    JR224575

    Abstract: diode jr 702
    Text: POWEREX 3=]E D I NC TS'iMbSl DGQMSbS b IPRX / o m tE X JQ224575/JQ225075 JR224575/JR225075 P o w e re x , In c ., W ills S tre e t, Y o u n g w o o d , P en n sylvan ia 1 5 6 9 7 4 1 2 9 2 5 -7 2 7 2 Single Chopper FETMOD Power Modules P ow erex Europe, S .A ., 4 2 8 A ven u e G. D urand, B P 107, 7 2 0 0 3 Le Mans, France (4 3 ) 4 1 .1 4 .1 4


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    JQ224575/JQ225075 JR224575/JR225075 Amperes/450-500 JQ225075 peres/450-500 JR224575 diode jr 702 PDF

    n fet 60v 50a

    Abstract: 4441 mosfet 4441 equivalent
    Text: F U JI 2SK2809-01 MR N -c h a n n e l M O S -F E T tM L lM E l/U G ilK F A P -IIIB S e r ie s 60 V 0 ,0 1 Q 50A 50W > Features - High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control General Purpose Power Amplifier


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    2SK2809-01 G004732 00DM733 n fet 60v 50a 4441 mosfet 4441 equivalent PDF

    D 92 M - 03 DIODE

    Abstract: No abstract text available
    Text: F 1 H 5 B - 6 1 5 Q a * ± y =e ^ = l - ) v _ FAST RECOVERY DIODE MODULE : Features Short Reverse Recovery Time • tS IM S lV ft* • Variety of Connection Menu Insulated Type • fflJ i! I A pplications Arc-W elders • 7 l) —Tfr'i —Ji»y4


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    1FI150B-060050A) 50/60Hz l95t/R89 D 92 M - 03 DIODE PDF

    ZAFI

    Abstract: No abstract text available
    Text: 1 FI250B -060 250 a FAST RECOVERY DIODE MODULE • 4# : Features Short Reverse Recovery Time • Variety of Connection M enu • Insulated Type I Applications • Arc-Welders • Kffl • ■ !£-<7)flfc^i> £SI3lEffl Free-Wheeling Diode High Speed Rectifiers


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    FI250B-060 50/60Hz 00000000C30 ZAFI PDF

    74LS690

    Abstract: D04G321
    Text: SbE » • /S T 7^237 DQMD317 10b ■ S G T H _ 7 '-9 S ‘2 S C S -T H O M S O N K K ^ fo m K g M M S 3 tt M 5 4 /7 4 H C 6 9 0 M 5 4 /7 4 H C 6 9 1 HC690 DECADE COUNTER/REGISTER 3-STATE HC691 4-BIT BINARY COUNTER/REGISTER (3-STATE) S G S-THONSON ■ HIGH SPEED


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    DQMD317 HC690 HC691 33MHz 004D32J1 74LS690 D04G321 PDF

    Untitled

    Abstract: No abstract text available
    Text: F U JI eiLSiEirijtìue 2SK2494-01 N-channel MOS-FET F-l Series 60V > Features 0.025Q T O -2 2 0 A B 10 î j ' 4.5 ±oi 03.6t}2 11.32 > Applications U i O.B-O! - Motor Control - General Purpose Power Amplifier - DC-DC converters 254 > Maximum Ratings and Characteristics


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    2SK2494-01 20Kii) 0-41P 60-Resistance QGDMb31 PDF

    ERB81-004

    Abstract: ERB81 A347 TI90
    Text: ERB81 -004 1.7A ! * » • + » : O utline D raw ings '> 3 y h * - / < U 7 » W * - K SCHOTTKY BARRIER DIODE ■ t t J t : Features :7j\ Low VF • * -f-y * : M arking XfcT-K Super high speed sw itch in g . • - f\s — t A 7 —3 —K : & Color code '• Silver


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    ERB81 ERB81-004 A347 TI90 PDF

    Untitled

    Abstract: No abstract text available
    Text: p u jr i 2SK2215-01 L,S N-channel MOS-FET FAP-IIA Series > Features - 600V 1 ,2 Q 8A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications -


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    2SK2215-01 /120V PDF

    1MBH60D-090A

    Abstract: 1MBH60D transistor z5t 150-TC1
    Text: 1MBH60D-090A IGBT I : Outline Drawings in s u l a t e d g a t e b ip o l a r t r a n s is t o r Features • High Speed Switching • flfcliiSWE Low Saturation Voltage • M itt M O s y —HUifc High Impedance Gate • ' j ' S S ' S m a l l Package • £ )& : Applications


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    1MBH60D-090A 50/fS} 1MBH60D-090A 1MBH60D transistor z5t 150-TC1 PDF

    30A high speed diode

    Abstract: No abstract text available
    Text: TS808C04 30 a '> 3 * y l) 7 ? *< t — K SCHOTTKY BARRIER DIODE : Features Surface m ount device- • i£ V F Low V f Connection Diagram Super high speed sw itching. •yu—t -ttwus Aiiffitt High reliability by planer design. : Applications High speed power sw itching.


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    TS808C04 500ns, 30A high speed diode PDF

    Untitled

    Abstract: No abstract text available
    Text: 1-Pack IGBT 1MBI600NP-060 IGBT MODULE N series '& Outline Drawing • Features Square RBSOA • Low Saturation Voltage • Less Total Pow er Dissipation • Im proved F W D Characteristic • Minim ized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times R ated Current)


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    1MBI600NP-060 Temperature000 D-60528 702708-Dallas, PDF

    2SK2759-01R

    Abstract: No abstract text available
    Text: FUJI 2SK2759-01R s ta is ir itìu e FAP-IIS Series N-channel MOS-FET 500V 0,55Q 15A 80W > Features - > Outline Drawing TO-3PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated


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    2SK2759-01R PDF

    Untitled

    Abstract: No abstract text available
    Text: Fe'iUMçiruâüÉ U JI 2SK2649-01R N-channel MOS-FET FAP-IIS Series 800V 9A High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 55 3.5 > Applications - 0.6 Switching Regulators


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    2SK2649-01R Tc-25 PDF

    rkm 20

    Abstract: 2SK2523-01
    Text: F U JI [É n U M c ir ^ U K 2SK2523-01 N-channel MOS-FET 450V IQ I 9 A I 6 0 W FAP-II Series > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof


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    2SK2523-01 O-220AB 20Kil) rkm 20 2SK2523-01 PDF

    523A7T5

    Abstract: No abstract text available
    Text: FU JI 2SK2764-01R N-channel MOS-FET FAP-IIS Series 800V > Features - High Speed Switching - Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 4 fí 4A 80W > Outline Drawing TO-3PF > Applications


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    2SK2764-01R 0DD4715 523A7T5 PDF

    CY74FCT399ATSOC

    Abstract: CY74FCT399CT CY74FCT399CTSOC CY74FCT399T CY74FCT399TSOC
    Text: fax id: 7022 —— — Æ jr r ~ 'f V D D CY74FCT399T 17 Q Q I 1 IT COO Quad 2-Input Register Features Functional Description • Function, pinout and drive compatible with FCT and F logic • FCT-C speed at 6.1 ns max. FCT-A speed at 7.0 ns max. • Reduced V qh typically = 3.3V versions of equivalent


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    CY74FCT399T FCT399T CY74FCT399ATSOC CY74FCT399CT CY74FCT399CTSOC CY74FCT399T CY74FCT399TSOC PDF

    mosfet ssd

    Abstract: soik
    Text: 2SK2762-01 L,S F U JI N-channel MOS-FET FAP-IIS Series > Features - 800V 4Q 4A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications


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    2SK2762-01 GGDM713 mosfet ssd soik PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJI 2SK2691-01R N-channel MOS-FET IS U J M s u ltìU K FAP-IIIB Series 60V > Features 0,0 I Q 70A 100W Outline Drawing TO-3PF - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 5.5 .35 > Applications - Motor Control


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    2SK2691-01R PDF

    VIP 100A

    Abstract: 2SK2770-01 doom
    Text: P U 2SK2770-01 J 1 E ïïïS D E N-channel MOS-FET 900V 5,5Q 3,5A 100W FAP-IIS Series > Features - Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated


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    2SK2770-01 VIP 100A doom PDF

    225-J

    Abstract: 2MBI100NB-120 M235
    Text: FUJI d 'a s s m 2-Pack IGBT 1200 V 100 A 2MBI100NB-120 a ie IGBT MODULE N series n Outline Drawing n Features • Square RBSOA •L o w Saturation Voltage •Less Total Power Dissipation •Im proved FWD Characteristic •M inim ized Internal Stray inductance


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    2MBI100NB-120 -22J-1 225-J D-60528 GD05144 225-J 2MBI100NB-120 M235 PDF