antenna mtbf
Abstract: J101 kdi 64537 receiver module mtbf mtbf antenna high power pin diode kdi 64537 switch pls 2-40 rf module mtbf AY-J101
Text: AY-J100 & AY-J101 PIN Diode Switch Assembly Switching speed is 3 S Maximum and the unit operates with +5Vdc at 300mA and -24Vdc@10mA, plus TTL logic. Description: Aeroflex introduces a new series of high power PIN diode switch assemblies for use as antenna horizontal or
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AY-J100
AY-J101
300mA
-24Vdc
AY-J100
antenna mtbf
J101
kdi 64537
receiver module mtbf
mtbf antenna
high power pin diode
kdi 64537 switch
pls 2-40
rf module mtbf
AY-J101
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marking code SM diode
Abstract: GGP DIODE marking SM 98 GGT DIODE GHM DIODE j78 transistor marking CODE J36 diode GGT DIODE ON GGR diode ggk diode
Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 33 to 170 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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J130A
J150A
J160A
J170A
C5DB03
marking code SM diode
GGP DIODE
marking SM 98
GGT DIODE
GHM DIODE
j78 transistor
marking CODE J36 diode
GGT DIODE ON
GGR diode
ggk diode
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marking code SM diode
Abstract: GGR diode marking SM 98 GGT DIODE marking CODE J36 diode GGP DIODE marking code GGt GGT DIODE ON sm 58 b marking code SM CM
Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 33 to 170 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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J130A
J150A
J160A
J170A
C5DB03
marking code SM diode
GGR diode
marking SM 98
GGT DIODE
marking CODE J36 diode
GGP DIODE
marking code GGt
GGT DIODE ON
sm 58 b
marking code SM CM
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Gex DIODE
Abstract: Gex 66 diode GEX 51 DIODE GEX 54 DIODE marking code KE diode diode marking GDE 38 SMJ30 diode Marking Code lm tvs diode GEP 86 A marking diode KE
Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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C5DB02
Gex DIODE
Gex 66 diode
GEX 51 DIODE
GEX 54 DIODE
marking code KE diode
diode marking GDE 38
SMJ30
diode Marking Code lm tvs
diode GEP 86 A
marking diode KE
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GEX 51 DIODE
Abstract: Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG
Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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C5DB02
GEX 51 DIODE
Gex DIODE
Gex 66 diode
marking code SM diode
218 Gex
marking code KE diode
diode GEP 86 A
DIODE gde 18
diode gde 78
Diode GEG
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MPD2T28125-700-E
Abstract: No abstract text available
Text: PIN Diode Driver MPD2T28125-700 Series Datasheet Features • Higher Output Voltage and Higher Output Current PIN Diode Driver in Surface Mount Package • Usable with MSW2000, 2010, 2030, 2040 and 2050 Series T-R and Symmetrical High Power SP2T Switches.
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MPD2T28125-700
MSW2000,
DS13649
MPD2T28125-700-E
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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2N3906 diode
Abstract: TCM1617 2N3906 TC02 TC1066 TC1068 TCM1617EV lpt to I2c Diode SMB J5
Text: TCM1617EV EVALUATION KIT FOR TCM1617, TC1066 AND TC1068 SMBUS THERMAL SENSORS WITH EXTERNAL DIODE INPUT FEATURES GENERAL DESCRIPTION • The TCM1617EV is an evaluation kit specifically designed to support the TCM1617, TC1066 and the TC1068 SMBus thermal sensors with external diode inputs. The
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TCM1617EV
TCM1617,
TC1066
TC1068
TCM1617EV
TC1068
2N3906 diode
TCM1617
2N3906
TC02
lpt to I2c
Diode SMB J5
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1N4148 diode HBM
Abstract: No abstract text available
Text: PIN Diode Driver MPD3T5N200-703 Series Datasheet Features • Higher Output Voltage and Higher Output Current PIN Diode Driver in Surface Mount Package • Usable with MSW3200-320 Series High Power Switches. • Operates from 2 Polarities: +5 V and -15 V to -200 V
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MPD3T5N200-703
MSW3200-320
MSW3200
1N4148 diode HBM
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MPD2T5N200-702
Abstract: diode 702 1N4148 diode HBM
Text: PIN Diode Driver MPD2T5N200-702 Series Datasheet Features • Higher Output Voltage and Higher Output Current PIN Diode Driver in Surface Mount Package • Usable with MSW2060 Series Symmetrical High Power SP2T Switches. • Operates from 2 Polarities: +5V and -15V to -200 V
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MPD2T5N200-702
MSW2060
diode 702
1N4148 diode HBM
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Untitled
Abstract: No abstract text available
Text: International B Rectifier SERIES IRK.F82 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability E lectrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package
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200to
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diode KL-03
Abstract: SMD DIODE CCD MARKING SMD MARKING CODE jt D1FJ10 marking code ccd diode smd diode schottky code marking 63 SMD MARKING CODE 501 KL-03 MARKING 1F smd marking code je
Text: Schottky Barrier Diode Single Diode m tm m o u t lin e Package : 1F D 1 F J10 Unit I mm Weight 0.058# Typ i>y - K - 7 - » ' Cathode* mark 100V 1A >r Feature I • /J v S S M D • Sm all S M D • I r = 0.2mA • Low lR=0.2mA -3 CM CM I M 2' J@ . u-/i-K n(W )
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D1FJ10
tVU-71-Â
J532-1)
diode KL-03
SMD DIODE CCD MARKING
SMD MARKING CODE jt
D1FJ10
marking code ccd diode
smd diode schottky code marking 63
SMD MARKING CODE 501
KL-03
MARKING 1F
smd marking code je
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Untitled
Abstract: No abstract text available
Text: ^CM/EREX CS241020 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 FSSt RßCOV&ry S in g le Diode Module 200 Amperes/1000 Volts Description: Powerex Fast Recovery Single Diode Modules are designed for use in applications requiring fast
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CS241020
Amperes/1000
CS241020
-400A/
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DIODE MOTOROLA 633
Abstract: J10 DIODE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G R E E I N E MMBD1005LT1 MMBD2005T1 MMBD3005T1 Sw itching Diode Part of the GreenLine Portfolio of devices with energy-conserving traits. This switching diode has the following features: • Very Low Leakage < 500 pA promotes extended battery lifeby decreas
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MMBD1005LT1
MMBD2005T1
MMBD3005T1
MMBD1005LT1
DIODE MOTOROLA 633
J10 DIODE
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MMIC code D
Abstract: MMIC code 61 J10003 mmic code R mmic code h
Text: MICRONETICS INC 34E D 61 blll742 Q00034? 7 H M R O Single Pole Four Throw LOW BAND 10 MHz to 1000 MHz GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) DES6 EH0 f l f f e .Si. j. •GaAs, MMIC and PIN diode technology •High reliability •Hermetically-sealed
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blll742
Q00034?
MIL-STD-105
MMIC code D
MMIC code 61
J10003
mmic code R
mmic code h
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Untitled
Abstract: No abstract text available
Text: • b b S B ' m 002432b S3T ■ APX P h ilip ^ e m ic o n d u c to re N AMER PHILIPS/DISCRETE b?E T> Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching
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002432b
BAS678
243pF
J10MO
7Z73212
7Z69086
BAW62
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CDH60
Abstract: NEMJ10006 MMIC code D PIN diode 12 GHz 60 GHz PIN diode NEMJ10003 diode PIN 60 Ghz mmic j 60 GHz PIN diode gaas E3 MMIC
Text: □111745 0000345 3 BME D HICRONETICS INC IMRÔ ff" Single Pole Three Throw Z • T 'S f '/ / LOW BAND 10 MHz to 1000 MHz (GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) 'D E a c e t g n f i z a •GaAs, MMIC and PIN diode technology ♦High reliability
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NEMJ10003
MIL-STD-105
NEMJ10006
MIL-STD-883
CDH60
MMIC code D
PIN diode 12 GHz
60 GHz PIN diode
diode PIN 60 Ghz
mmic j
60 GHz PIN diode gaas
E3 MMIC
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SU212
Abstract: MMIC code G
Text: MICRONETXCS INC 34E D D b l l l 7 M2 0 Q0 D 343 T ElMRO Single Pole Two Throw T'5/~" LOW BAND 10 MHz to 1000 MHz GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) CUSiIQMi R''FION -DESSRI&TI©w m: . r r \ mr " . • ’ . r - -•GaAs, MMIC and PIN diode technology
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J10003
MIL-STD-883
SU212
MMIC code G
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MMIC code D
Abstract: 10 GHz pin diode 60 GHz PIN diode gaas E5 MMIC iso/8879-1986/gp131 diode
Text: MICRONETICS INC blll7M5 Q Q O G 3 4 cl Q EHMRO 34E D 'T - S > 'U A - T ^ t- T J b Single Pole Five Throw LOW BAND 10 MHz to 1000 MHz GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) a D E SeR IB -T I •GaAs, MMIC and PIN diode technology •High reliability
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J10006
MIL-STD-883
MIL-STD-105
MMIC code D
10 GHz pin diode
60 GHz PIN diode gaas
E5 MMIC
iso/8879-1986/gp131 diode
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EM- 546 motor
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJ10007/D SEMICONDUCTOR TECHNICAL DATA M J10007* D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode ‘ Motorola Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON
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MJ10007/D
J10007*
MJ10007
O-204AA
EM- 546 motor
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EM- 546 motor
Abstract: BTa 140 equivalent transistor crossover MJ10009
Text: MOTOROLA Order this document by MJ10009/D SEMICONDUCTOR TECHNICAL DATA M J10 009* D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor w ith B ase-E m itter Speedup Diode ‘ Motorola Preferred Device 20 AMPERE NPN SILICON
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MJ10009/D
MJ10009
O-204AA
EM- 546 motor
BTa 140 equivalent
transistor crossover
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J10023 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor w ith B ase-E m itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS
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MJ10023/D
J10023
97A-05
O-204AE
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MJ10005
Abstract: TO218 20A Darlington mj10004 e100325 MJ-10004 MJ10004PFI TO-3 250V 20A MJ10
Text: *T# S G S -TiLHüOOMTS O«N! MJ10004/4P/4PF1 M J10005/5P /5P FI EPITAXIAL PLANAR NPN DESCRIPTIO N The MJ10004/5, MJ10004P/5P and MJ10004PFI/ 5PFI are silicon epitaxial planar NPN transistors in monolithic Darlington configuration with integrated speed-up diode.
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MJ10004/4P/4PF1
J10005/5P/5PFI
J10004/5,
MJ10004P/5P
MJ10004PFI/
O-218
ISOWATT218
MJ10004/4P/4PFI
MJ10005/5P/5PFI
MJ10004/4P/4PFI
MJ10005
TO218 20A Darlington
mj10004
e100325
MJ-10004
MJ10004PFI
TO-3 250V 20A
MJ10
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