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    DIODE IR 132 E Search Results

    DIODE IR 132 E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE IR 132 E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DE10SC4

    Abstract: No abstract text available
    Text: SHINDENGEN Schottky Rectifiers SBD DE10SC4 Dual OUTLINE DIMENSIONS Case : E-pack Unit : mm 40V 10A FEATURES SMT Tj150 PRRSM avalanche guaranteed High current capacity with Small Package APPLICATION Switching power supply DC/DC converter Home Appliances, Office Equipment


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    DE10SC4 Tj150 DE10SC4 PDF

    DE10SC4

    Abstract: No abstract text available
    Text: SHINDENGEN Schottky Rectifiers SBD DE10SC4 Dual OUTLINE DIMENSIONS Case : E-pack Unit : mm 40V 10A FEATURES ● SMT ● Tj150℃ ● PRRSM ● High avalanche guaranteed current capacity with Small Package APPLICATION ● Switching power supply ● DC/DC converter


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    DE10SC4 Tj150 DE10SC4 PDF

    "MARKING CODE A8*"

    Abstract: transistor A82 CMPD2003 CMPD2004 CMPD2004S A82 MARKING CODE
    Text: Central CMPD2003 CMPD2004 CMPD2004S TM Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2004, CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.


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    CMPD2003 CMPD2004 CMPD2004S CMPD2003, CMPD2004, CMPD2004S OT-23 "MARKING CODE A8*" transistor A82 CMPD2003 CMPD2004 A82 MARKING CODE PDF

    MOSFET IRF150

    Abstract: IRF150 MOSFET HA711
    Text: HE 0 I 4055452 DGtnObb 5 | T-39-13 Data Sheet No. PD-9.305G I N T E R N A T IO N A L R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRF15Ü IRF151 IRF15S -Channel IRF153 Features: 100 Volt, 0.055 Ohm H EXFET The HEXFET technology is the key to International


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    T-39-13 IRF15Ü IRF151 IRF15S IRF153 MOSFET IRF150 IRF150 MOSFET HA711 PDF

    5LC20U

    Abstract: No abstract text available
    Text: □ - □ 3 . Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D5LC20UR 200V 5A r n y 't'X > trr35n s >SRS;H >^BsOAw0, ^ miBs FA RATINGS Absolute Maximum Ratings a i s E-fS ym bo l Conditions a Item Storage Temperature Operating Junction Temperature


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    D5LC20UR trr35n 50HziE5K J515-5 5LC20U PDF

    IRF150R

    Abstract: IRF151R IRF152R IRF153R
    Text: Rugged Power MOSFETs. File Num ber 2002 IR F150R , IR F15 1 R , IR F 152R , IR F153R Avalanche Energy Rated N-Channel Power MOSFETs 3 3 A an d 4 0 A , 6 0 V -1 0 0 V ros on = 0 .0 5 5 0 an d 0 .0 8 fi N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


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    IRF150R, IRF151R, IRF152R, IRF153R 0V-100V 92cs-42c9s IRF152R IRF153R IRF150R IRF151R PDF

    UL1385

    Abstract: IRKL1 IRK.L1 D243 D244 D245 NSD245 70Dir
    Text: International S Rectifier SERIES IRK.L131/132 FAST RECOVERY DIODES NEW INT-A-pak Power Modules Features • ■ ■ ■ ■ ■ ■ ■ 140A Fast recovery tim e characteristics E lectrica lly isolated base plate Industrial standard package S im plified m echanical designs,


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    L131/132 L131/132 15-Frequency UL1385 IRKL1 IRK.L1 D243 D244 D245 NSD245 70Dir PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 /a s /h *- AUT' S H ^ - h Schottky Barrier Diode OUTLINE DIMENSIONS DE10SC4 Package I E i'ivO Standard soldering pad 40 V 10 A : ±o.i Tolerance: ±0.1 •S M D 0.5±al • T jl5 0 ° C # P rrsm ^ t j y 'j I f fiti • im - x m z a m m 0.1±al m m • S R S ÎÜ


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    DE10SC4 65-as DE10SC4 J515-5 PDF

    IRF162

    Abstract: IRF152 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151 IRF153
    Text: Standard Power MOSFETs File Number 1»24 IRF150, IRF151, IRF152, IRF153 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 33 A and 40 A, 60 V - 100 V rDs on = 0.055 Ct and 0.08 Ci N -C H A N N E L E N H A N C E M E N T M O D E


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    IRF150, IRF151, IRF152, IRF153 IRF152 IRF153 75BVDSS IRF162 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151 PDF

    missile seeker

    Abstract: varactor diode for x band radar radar detector leakage police radar detector Q4000 GaAs impatt diode W band
    Text: MA45200 Series Silicon Abrupt Junction Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM 30 J — 'V 3 El ~ r ■ ■ ■ ■ AVAILABLE IN CERAMIC PACKAGES CUSTOM DESIGNS AVAILABLE LOW POST TUNING DRIFT FREQUENCY RANGE VHF —


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    MA45200 missile seeker varactor diode for x band radar radar detector leakage police radar detector Q4000 GaAs impatt diode W band PDF

    diode sy 171 10

    Abstract: diode sy 170/10
    Text: Philips Semiconductors Product specification Rectifier diodes ultrafast BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop,


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    BYV40 OT223 BYV40- OT223. diode sy 171 10 diode sy 170/10 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Rectifier diodes * BYV40E series ultrafast, rugged_ _ GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, rugged dual rectifier diodes in a plastic envelope


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    BYV40E OT223 BYV40ERepetitive OT223. PDF

    AAAZ

    Abstract: No abstract text available
    Text: TOSHIBA {D ISCR ET E/OPTO} Ti 9097250 TOSHIBA DISCRETE/OPTO //osh'thu DE'I ^ 7 2 5 0 0Qlfe,77b fc, T 99D 16776 DTS^-IS TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 1 5 2 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( 7T-M0S I ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


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    100nA 250lJA VDD-24V Tc-25 00A/us AAAZ PDF

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor MICROCIRCUIT DATA SHEET Original Creation Date: 11/07/96 Last Update Date: 03/17/97 Last Major Revision Date: 11/07/96 MNLMl 13-2 -X R E V 1A0 REFERENCE DIODE General Description The LM113 is a temperature compensated, low voltage reference diode.


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    LM113 Q9385HR MKT-H02ARC PDF

    LD50A

    Abstract: No abstract text available
    Text: i TOSHIBA FIELD EFFECT TRANSISTOR YTTM^A SILICON N CHANNEL MOS TYPE ir - YTFP152 MOSI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in nm CHOPPER REGULATOR, DC_DC CONVERTER AND MOTOR 1&0MAX. 0Z.2ÍÜ2 V. DRIVE APPLICATION.


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    YTFP152 0-06OE 250UA Ta-25 250uA, 250uA ID-20A VGS-10V ID-20A LD50A PDF

    10VTZ

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Twin Diode mtm DF10SC6 O UTLINE U n it-m m Package : STO-220 W e igh t 1.5g T y p u^háLÍ°-(M) 10.2 60 V 10A Feature * SMD < SM D ' T j= 1 5 0 °C 1 Tj= 150°C 1P rrs m 1 P rrs m R ating Main Use >X ' f ' y 1S w itc h in g R egulator


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    DF10SC6 STO-220 10VTZ PDF

    SF30JC10

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Twin Diode W tm SF30JC10 O U TLIN E 100V 30A Feature • Tj=150°C • Tj=150°C • • Full Molded 7 [Æ -JU K • fîlR=1.0mA • Low Ir=1.0 itiA • if & f lÆ S Ê ê C U C C U • Resistance for thermal run-away • Dielectric Strength 2kV


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    SF30JC10 Tc-10 SF30JC10 PDF

    LD33A

    Abstract: No abstract text available
    Text: TOSHIBA MSE » DISCRETE/OPTO TOSHIBA FIELD EFFECT TRANSISTOR • TDR7ES0 7 «TOSM - YTFP152 SILICON N CHANNEL MOS TYPE (ir - MOSI) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATION Unit in mni CHOPPER REGULATOR, DC_DC CONVERTER AND MOTOR


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    YTFP152 0-06fi vnn-24V IDR-33A 00A/vis LD33A PDF

    d 132 smd diode

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Twin Diode M fm OUTLINE Package : STO-220 DF20JC10 Unit-mm Weight 1.5g Typ 10.2 100V 20A Feature • SMD • <SlR=0.7mA • SMD • S iy R T È Î E iË c I l_y (<_ <L U'' • Resistance for thermal run-away • High lo Rating-Small-RKG


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    STO-220 DF20JC10 dio25 d 132 smd diode PDF

    EIGHT MOSFET ARRAY

    Abstract: 200v 100mA mosfet DIG-130 EIGHT n-channel MOSFET ARRAY
    Text: 31E D DIONICS INC B EÖMÖÖOM 0GQ03ÛÔ M B S D 10 7=V/-?3 HIGH SPEED PHOTOVOLTAIC N-CHANNEL MOSFET-DRIVER* DIG-130 DIG-131 DIG-132 65 RUSHMORE STREET, WESTBURY, NEW YORK 11590 516 997-7474 TWX 510*222*0974 FEATURES * OPTICALLY VOLTAGE * LOW POWER * EIGHT PIN


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    0GQ03Û DIG-130 DIG-131 DIG-132 DIG-130/131/132 -100K EIGHT MOSFET ARRAY 200v 100mA mosfet EIGHT n-channel MOSFET ARRAY PDF

    Untitled

    Abstract: No abstract text available
    Text: Super Fast Recovery Diode Twin Diode Wtm D5LC20U OUTLINE 200V 5A Feature •m s'ix • • • L o w N oise trr=35ns 7 [Æ - J U K • trr= 3 5 n s • Full M o ld e d Main Use • S w itc h in g R eg u lator • Fly W heel • ÌM .0 A J M 3 • H om e A p p lia n c e , O ffice A u to m a tio n , Lig h tin g


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    D5LC20U i50Hz PDF

    ld20u

    Abstract: 5ld20u
    Text: Super Fast Recovery Diode Twin Diode Wtm D5LD20U OUTLINE 200V 5A Feature • m s 'ix • L o w N oise • trr=35ns • trr= 3 5 n s • 7 [Æ - J U K • Full M o ld e d Main Use • S w itc h in g R eg u lator • Fly W heel • 8 < B , O A , PsBfl •


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    D5LD20U i50Hz ld20u 5ld20u PDF

    10SC4

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Twin Diode l ^ t l l OUTLINE Package : E-pack DE10SC4 Unit: mm Weight 0.326tf Typ 4 0 V 10 A Feature G6 • SM D • SMD • P rrsm 7 ' K 5 > î / x (SSE • Prrsm Rating Type wo I H igh lo R a tin g -S m a ll-P K G 10SC4 p -/Hü»XM


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    DE10SC4 326tf 10SC4 or10ms J532-1) 10SC4 PDF

    Untitled

    Abstract: No abstract text available
    Text: Central CMPD2003 CMPD2004 CMPD2004S Sem iconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2004, CM PD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.


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    CMPD2003 CMPD2004 CMPD2004S CMPD2003, CMPD2004, PD2004S OT-23 PDF