TOP225
Abstract: SOD89 TEA1562 TOP224Y TOP227Y equivalent VIPER100 Application Note VIPER50 application note top223y TOP227Y philips top201
Text: Philips Semiconductors’ new ZenBlockTM replaces double ZenBlockTM diode-, RCD- or RC-snubbers in flyback converters Zener with integrated blocking diode The leakage inductance of the transformer in a flyback converter causes voltage spikes when the MOSFET is turned off. In general
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effi5600
TOP225
SOD89
TEA1562
TOP224Y
TOP227Y equivalent
VIPER100 Application Note
VIPER50 application note
top223y
TOP227Y philips
top201
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PDF
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marking code s4 sc-70
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP50-05W General purpose PIN diode Preliminary specification 2001 Feb 08 Philips Semiconductors Preliminary specification General purpose PIN diode BAP50-05W FEATURES PINNING • Two elements in common cathode configuration in a
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Original
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M3D102
BAP50-05W
BAP50-05W
OT323
MAM382
OT323)
125004/00/02/pp7
marking code s4 sc-70
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PDF
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BAP51
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP51-05W General purpose PIN diode Product specification 2001 Jan 23 Philips Semiconductors Product specification General purpose PIN diode BAP51-05W FEATURES PINNING • Two elements in common cathode configuration in a
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Original
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M3D102
BAP51-05W
OT323
MAM382
613512/01/pp8
BAP51
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PDF
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marking code 6w
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP50-04W General purpose PIN diode Product specification 2001 Jan 29 Philips Semiconductors Product specification General purpose PIN diode BAP50-04W FEATURES PINNING • Two elements in series configuration in a small SMD
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Original
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M3D102
BAP50-04W
OT323
MAM391
OT323
613512/01/pp8
marking code 6w
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PDF
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BAP50-04
Abstract: BP317 s21 diode smd diode marking CA
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 BAP50-04 General purpose PIN diode Preliminary specification 1999 May 10 Philips Semiconductors Preliminary specification General purpose PIN diode BAP50-04 PINNING FEATURES • Two elements in series configuration in a small-sized
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Original
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M3D088
BAP50-04
MAM232
125004/00/01/pp8
BAP50-04
BP317
s21 diode
smd diode marking CA
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PDF
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BAP50-04
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS [Mm SMEET BAP50-04 General purpose PIN diode P relim inary specification Philips Semiconductors 1999 May 10 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN diode BAP50-04 PINNING FEATURES • Two elements in series configuration in a small-sized
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OCR Scan
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BAP50-04
BAP50-04
SCA64
125004/00/01/pp8
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP50-05W General purpose PIN diode Product specification Supersedes data of 2001 Mar 02 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-05W FEATURES PINNING • Two elements in common cathode configuration in a
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Original
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M3D102
BAP50-05W
OT323
MAM382
613512/02/pp8
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PDF
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BAP50-05
Abstract: DIODE 61 BP
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D088 BAP50-05 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 Philips Semiconductors Product specification General purpose PIN diode BAP50-05 PINNING FEATURES • Two elements in common cathode configuration in a
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M3D088
BAP50-05
MAM108
125004/00/02/pp8
BAP50-05
DIODE 61 BP
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PDF
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TSUS5400
Abstract: TSUS5401 TSUS TSUS5402 TSUS-5402
Text: TSUS5400, TSUS5401, TSUS5402 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • • • • • • • • • • • 94 8390 DESCRIPTION TSUS5400 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.
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TSUS5400,
TSUS5401,
TSUS5402
TSUS5400
2002/95/EC
2002/96/EC
18-Jul-08
TSUS5401
TSUS
TSUS5402
TSUS-5402
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PDF
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BAP50-04
Abstract: MAM232
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 BAP50-04 General purpose PIN diode Product specification Supersedes data of 1999 May 10 1999 Dec 03 Philips Semiconductors Product specification General purpose PIN diode BAP50-04 FEATURES PINNING • Two elements in series configuration in a small-sized
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Original
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M3D088
BAP50-04
MAM232
125004/02/pp8
BAP50-04
MAM232
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 BAP65-05 Silicon PIN diode Product specification 2001 May 07 Philips Semiconductors Product specification Silicon PIN diode BAP65-05 FEATURES PINNING • Two elements in common cathode configuration PIN
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M3D088
BAP65-05
MAM108
613512/01/pp8
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PDF
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marking code V6 DIODE
Abstract: marking code V6 marking code V6 17 surface mount diode V6 marking code diode BAP65-05W diode marking v6 marking code v6 29 DIODE marking code V6 33 surface mount diode Philips TV tuners SMD MARKING CODE V6
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP65-05W Silicon PIN diode Product specification 2001 May 07 Philips Semiconductors Product specification Silicon PIN diode BAP65-05W FEATURES PINNING • Two elements in common cathode configuration PIN
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Original
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M3D102
BAP65-05W
MAM382
613512/01/pp8
marking code V6 DIODE
marking code V6
marking code V6 17 surface mount diode
V6 marking code diode
BAP65-05W
diode marking v6
marking code v6 29 DIODE
marking code V6 33 surface mount diode
Philips TV tuners
SMD MARKING CODE V6
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flyback transformer philips
Abstract: FLYBACK CLAMPING DIODE top225 SOD89 flyback snubber VIPER50 application note TOP221 TOP227Y equivalent VIPER100 Application Note TOP201
Text: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS APPLICATION NOTE ZenBlockTM Zener with integrated blocking diode TM Philips Semiconductors' new ZenBlock replaces double-diode-, RCD- or RC-snubbers in flyback convertors. The new components offer circuit designers the important benefits of lower component
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Original
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MBL157
flyback transformer philips
FLYBACK CLAMPING DIODE
top225
SOD89
flyback snubber
VIPER50 application note
TOP221
TOP227Y equivalent
VIPER100 Application Note
TOP201
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PDF
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atmel 906
Abstract: Atmel 652 T2527 IN783 4600B
Text: Features • No External Components Except PIN Diode • Supply-voltage Range: 2.7 V to 3.6 V • Available for Carrier Frequencies in the Range of 30 kHz to 56 kHz; • • • • • • • Adjusted by Zener-diode Fusing Enhanced Bandpass Filter Accuracy of ±1.25%
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T2527
T2527
4600B
atmel 906
Atmel 652
IN783
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PDF
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TSUS540
Abstract: No abstract text available
Text: TSUS540. Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors.
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TSUS540.
2002/95/EC
2002/96/EC
18-Jul-08
TSUS540
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PDF
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TSUS540
Abstract: TSUS5400 TSUS5401 TSUS5402 DASF001678
Text: TSUS540. Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors.
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TSUS540.
08-Apr-05
TSUS540
TSUS5400
TSUS5401
TSUS5402
DASF001678
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PDF
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SN7449
Abstract: 54175 SN7401 74L42 SN7437 SN74S40
Text: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type s listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a
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OCR Scan
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SN15312
SN15325,
SN15370
SN7449
54175
SN7401
74L42
SN7437
SN74S40
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PDF
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TSUS540
Abstract: TSUS5400 TSUS5401 TSUS5402
Text: TSUS540. VISHAY Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors.
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TSUS540.
2002/95/EC
D-74025
08-Apr-04
TSUS540
TSUS5400
TSUS5401
TSUS5402
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PDF
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TSUS5400
Abstract: diode IN 5402 TSUS-5402 TSUS540 TSUS5401 TSUS5402
Text: TSUS540. VISHAY Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue-grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors.
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TSUS540.
2002/95/EC
08-Apr-05
TSUS5400
diode IN 5402
TSUS-5402
TSUS540
TSUS5401
TSUS5402
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PDF
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Untitled
Abstract: No abstract text available
Text: UF5400G – UF5408G 3.0A GLASS PASSIVATED ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency
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UF5400G
UF5408G
DO-201AD,
MIL-STD-202,
DO-201AD
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PDF
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UF540x
Abstract: No abstract text available
Text: UF5400 – UF5408 3.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes
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UF5400
UF5408
DO-201AD,
MIL-STD-202,
DO-201AD
UF540x
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PDF
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TSUS5400
Abstract: TSUS5402 TSUS5401 TSUS-5402
Text: TSUS5400, TSUS5401, TSUS5402 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: λp = 950 nm
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Original
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TSUS5400,
TSUS5401,
TSUS5402
2002/95/EC
2002/96/EC
TSUS5400
18-Jul-08
TSUS5402
TSUS5401
TSUS-5402
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PDF
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Untitled
Abstract: No abstract text available
Text: TSUS5400, TSUS5401, TSUS5402 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • 94 8390 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off
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Original
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TSUS5400,
TSUS5401,
TSUS5402
2002/95/EC
2002/96/EC
TSUS5400
2011/65/EU
2002/95/EC.
2011/65/EU.
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PDF
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TSUS5400
Abstract: No abstract text available
Text: TSUS5400, TSUS5401, TSUS5402 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • 94 8390 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off
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Original
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TSUS5400,
TSUS5401,
TSUS5402
2002/95/EC
2002/96/EC
TSUS5400
2011/65/EU
2002/95/EC.
2011/65/EU.
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PDF
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