FDS7066N3
Abstract: FDS7066SN3
Text: FDS7066SN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7066SN3 is designed to replace a single SO-8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a
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FDS7066SN3
Abstract: MOSFET and parallel Schottky diode diode in 4740 FDS7066N3
Text: FDS7066SN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7066SN3 is designed to replace a single SO-8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a
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FDS7066SN3
FDS7066SN3
FDS7066N3
100oC
FDS7066N3)
MOSFET and parallel Schottky diode
diode in 4740
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Untitled
Abstract: No abstract text available
Text: FDS7066SN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7066SN3 is designed to replace a single SO-8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a
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FDS7066SN3
FDS7066SN3
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FDS7066N3
Abstract: FDS7068SN3
Text: FDS7068SN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7068SN3 is designed to replace a single SO-8 FLMP-3 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a
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FDS7068SN3
FDS7068SN3
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FDS7068SN3
Abstract: No abstract text available
Text: FDS7068SN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7068SN3 is designed to replace a single SO-8 FLMP-3 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a
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FDS7068SN3
FDS7068SN3
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IN 4751A
Abstract: 4749a 4735A diode 4746a 4747a IN 4749A 4740a 4732A 4743a 4733A
Text: 1N4728A~1N4764A GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE 3.3 to 100 Volts 1.0 Watts POWER DO-41/DO-41G Unit: inch mm FEATURES • Low profile package • Built-in strain relief • Low inductance • High temperature soldering : 260°C /10 seconds at terminals
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1N4728A
1N4764A
DO-41/DO-41G
DO-41G
DO-41
MIL-STD-202G,
IN 4751A
4749a
4735A diode
4746a
4747a
IN 4749A
4740a
4732A
4743a
4733A
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4749A
Abstract: 4735A diode 4744a IN 4751A zener 4742a 4747a 4733a zener 4743a in 4749A 4735A
Text: 1. DATA SHEET 1N4728A~1N4764A GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE 3.3 to 100 Volts 1.0 Watts POWER DO-41/DO-41G Unit: inch mm FEATURES • Low profile package • Built-in strain relief • Low inductance • High temperature soldering : 260°C /10 seconds at terminals
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1N4728A
1N4764A
DO-41/DO-41G
DO-41G
DO-41
MIL-STD-202,
4749A
4735A diode
4744a
IN 4751A
zener 4742a
4747a
4733a zener
4743a
in 4749A
4735A
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IHW40N65R5
Abstract: No abstract text available
Text: ResonantSwitchingSeries IHW40N65R5 Datasheet IndustrialPowerControl IHW40N65R5 ResonantSwitchingSeries Features: C •
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IHW40N65R5
JESD-022
IHW40N65R5
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Untitled
Abstract: No abstract text available
Text: ResonantSwitchingSeries IHW40N65R5 Datasheet IndustrialPowerControl IHW40N65R5 ResonantSwitchingSeries Features: C •
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IHW40N65R5
JESD-022
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kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
kpb 307
KP8 500
KP9 1500 -12
KPd 1500 TEG
KP5-600 THYRISTOR
KP8 800
igbt types 6000v
KP7 500
TBA 1240 ic
teg thyristor
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PS110
Abstract: PS110-00 PS104
Text: CircuLaser Diode PS110-00 664nm, 50mW Description The CircuLaser PS104 is a 0.66 µm band, AlGalnP index guided, laser diode with a multi-quantum well MQW structure. It is suitable as a light source for large capacity optical disc memories, such as DVDRAM, and various other types of optical equipment. Combined with an integrated, internal, beam
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PS110-00
664nm,
PS104
100ns)
PS110
PS110-00
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blue Laser-Diode
Abstract: PS103-00
Text: CircuLaser Diode PS103-00 635nm, 3mW Description The CircuLaser PS103 is a 0.63 µm band, AlGalnP index guided, laser diode with a multiquantum well MQW structure. It is suitable as a light source for laser pointers and optical equipment for alignment. Combined with an integrated, internal, beam correcting optic and
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PS103-00
635nm,
PS103
blue Laser-Diode
PS103-00
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PS107-00
Abstract: PS107 685-nm
Text: CircuLaser Diode PS107-00 685nm, 35mW Description The CircuLaser PS107 is a 0.68 µm band, AlGalnP index guided, laser diode with a multiquantum well MQW structure. It is suitable as a light source for large capacity optical disc memories, such as magneto-optical, and various other types of optical equipment. Combined with
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PS107-00
685nm,
PS107
PS107-00
685-nm
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BLUE SKY RESEARCH CIRCULASER LASER DIODE 658nm, 35mW
Abstract: blue Laser-Diode PS104 PS104-00
Text: CircuLaser Diode PS104-00 658nm, 35mW Description The CircuLaser PS104 is a 0.65 µm band, AlGalnP index guided, laser diode with a multiquantum well MQW structure. It is suitable as a light source for large capacity optical disc memories, such as DVD-RAM, and various other types of optical equipment. Combined with an
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PS104-00
658nm,
PS104
BLUE SKY RESEARCH CIRCULASER LASER DIODE 658nm, 35mW
blue Laser-Diode
PS104-00
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PS020
Abstract: PS020-00 AN/vogt sky
Text: CircuLaser Diode PS020-00 633nm, 5mW Description The CircuLaser PS020 is a 0.63 µm band, A1GaInP, index-guided, multi-quantum well MQW laser diode with an integrated, internal, beam correcting optic. It is suitable as a light source for bar code readers , laser levelers and various other types of optical equipment. Hermetic sealing of
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PS020-00
633nm,
PS020
PS020-00
AN/vogt sky
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handling of beam lead diodes
Abstract: PS028-00 Circulaser
Text: CircuLaser Diode PS028-00 635nm, 15mW Description The CircuLaser PS028 is a 0.63 µm band, A1GaInP index-guided, multi-quantum well MQW laser diode with an integrated, internal, beam correcting optic. It is suitable as a light source for laser levelers and optical equipment for measurement. Hermetic sealing of the package assures
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PS028-00
635nm,
PS028
handling of beam lead diodes
PS028-00
Circulaser
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PS026-00
Abstract: BSR152
Text: CircuLaser Diode PS026-00 780nm, 50mW Description The CircuLaser PS026 is a 0.78 µm band, GaAlAs index guided, multi-quantum well MQW laser diode with an integrated, internal, beam correcting optic. It is suitable as a light source for optical disk memories, levelers and various other types of optical equipment. Hermetic sealing of
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PS026-00
780nm,
PS026
PS026-00
BSR152
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ps021
Abstract: PS021-00 670NM Laser-Diode
Text: CircuLaser Diode PS021-00 670nm, 10mW Description The CircuLaser PS021 is a 0.67 µm band, A1GaInP, index-guided, multi-quantum well MQW laser diode with an integrated, internal, beam correcting optic. It is suitable as a light source for laser beam printers, levelers and various other types of optical equipment. Hermetic sealing of the
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PS021-00
670nm,
PS021
PS021-00
670NM Laser-Diode
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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5342B
Abstract: 1n 4148 zener diode IN5956B diode IN 5342B IN 5342B Zener Diode 4148 zener T 4148 IN5913B in5388b IN5342B
Text: ZENER DIODES 1 WATT ZENER DIODE-PLASTIC O P E R A T IN G A N D S TO R A G E T E M P E R A T U R E - 6 5 ° C to + 1 75 °C IN 4 7 3 6 THRU IN 4 7 6 4 *E LE C T R IC A L C H A R A C T E R IS T IC S Ta = 2 5 °C u n le ss o th e rw ise n o te d V f = 1.2 V M ax,
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1N4736A
1N4749A
1N4750A
5342B
1n 4148 zener diode
IN5956B
diode IN 5342B
IN 5342B
Zener Diode 4148
zener T 4148
IN5913B
in5388b
IN5342B
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Untitled
Abstract: No abstract text available
Text: 1TE D • 4bli3303 0 0 00 3 1 3 Beam Lead Varactor Diodes SECTION 4 MILLIMETER-WAVE DIODES HUGHES/ MICROWAVE PRDTS The Hughes model 47401H-0101 beam-lead varactor is a ; GaAs Schottky-barrier device which features a rugged : beam-lead structure that provides lead pull-strengths of 10 g
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4bli3303
47401H-0101
47401H-0101
-2V/-20V,
47401H-0000
47406H-0000
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47401H-0000
Abstract: No abstract text available
Text: HUGHES/ HICROUAVE PRDTS l^E D B MU13303 0000812 2 B T-07-07 Beam Lead Mixer Diodes The Hughes 47401H-0000 and 47406H-0000 beam lead mixer diodes are available for use in EHF mixer applications requiring the ultimate in performance. Conversion losses of 5 dB in Ka-Band and 6.5 dB in W-Band have been achieved
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MU13303
T-07-07
47401H-0000
47406H-0000
47406H-0000
H-0000
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