T161-160
Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.
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ISO9001
to300
SF15CL
500Aelement
T161-160
SCR T161-160
t153-630
KP25A
T123-250
tc171
ZP50A
T143-630 SCR
KP200A
T151-100
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Untitled
Abstract: No abstract text available
Text: UF4001G – UF4007G 1.0A GLASS PASSIVATED ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency
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UF4001G
UF4007G
DO-41,
MIL-STD-202,
DO-41
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SIDC01D120H6
Abstract: No abstract text available
Text: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:
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SIDC01D120H6
Q67050-A4171A001
4002S,
SIDC01D120H6
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A001
Abstract: SIDC01D120H6
Text: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:
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SIDC01D120H6
Q67050-A4171sawn
4002S,
A001
SIDC01D120H6
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Untitled
Abstract: No abstract text available
Text: UF4001 – UF4007 1.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes
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UF4001
UF4007
DO-41,
MIL-STD-202,
DO-41
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SIDC01D120H6
Abstract: No abstract text available
Text: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:
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SIDC01D120H6
Q67050-A4171A001
4002S,
SIDC01D120H6
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Untitled
Abstract: No abstract text available
Text: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:
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SIDC01D120H6
Q67050-A4171sawn
4002S,
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PS2381
Abstract: PS2381-1 GB8898 GB8898-2001 GB4943-2001 CQC10001041058 CQC10001041059 EN60747-5-2 VDE0884 PS2381-1Y-V-F3-AX
Text: PHOTOCOUPLER PS2381-1 4-PIN LSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 115°C −NEPOC Series− DESCRIPTION The PS2381-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is mounted in a plastic 4-LSOP Long Mini-Flat Small Outline Package for high density applications.
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PS2381-1
PS2381-1
PS2381
GB8898
GB8898-2001
GB4943-2001
CQC10001041058
CQC10001041059
EN60747-5-2
VDE0884
PS2381-1Y-V-F3-AX
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PS2381
Abstract: GB8898-2001 PS2381-1 GB4943-2001 PS2381-1Y-V-F3-AX GB8898 CQC10001041058 CQC10001041059 EN60747-5-2 VDE0884
Text: DATA SHEET PHOTOCOUPLER PS2381-1 4-PIN LSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 115°C −NEPOC Series− DESCRIPTION The PS2381-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is mounted in a plastic 4-LSOP Long Mini-Flat Small Outline Package for high density applications.
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PS2381-1
PS2381-1
PS2381
GB8898-2001
GB4943-2001
PS2381-1Y-V-F3-AX
GB8898
CQC10001041058
CQC10001041059
EN60747-5-2
VDE0884
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PS2861B-1Y-F3
Abstract: EN60747-5-2 PS2861B-1 VDE0884 100TA PS2861b
Text: PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package
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PS2861B-1
PS2861B-1
PS2861B-1Y-F3
EN60747-5-2
VDE0884
100TA
PS2861b
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PS2381-1Y-V-AX
Abstract: No abstract text available
Text: DATA SHEET PHOTOCOUPLER PS2381-1 4-PIN LSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 115°C −NEPOC Series− DESCRIPTION The PS2381-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is mounted in a plastic 4-LSOP Long Mini-Flat Small Outline Package for high density applications.
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PS2381-1
PS2381-1
PS2381-1-F3:
PS2381-1Y-V-AX
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NEC 2703
Abstract: High Density Mounting Type Photocoupler
Text: DATA SHEET PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package
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PS2861B-1
PS2861B-1
NEC 2703
High Density Mounting Type Photocoupler
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PS2861B-1
Abstract: NEC 2703 PS2861b EN60747-5-2 VDE0884 PS2861B-1Y-V-F3
Text: DATA SHEET PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package
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PS2861B-1
PS2861B-1
NEC 2703
PS2861b
EN60747-5-2
VDE0884
PS2861B-1Y-V-F3
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package
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PS2861B-1
PS2861B-1
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency
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235kD5
OT-23
OT-143
11I181I8I88B
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100C1295
Abstract: DSW480
Text: Microwave Integrated Circuit Switches • GaAs, PIN Diode, & Schottky Diode Technology • Thin-Film MIC Technology • Plug In DIP Style Packages • Flatpack Packages • Connectorized Packages • Full Military Screening Available See Page 270 DAICO INDUSTRIES
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DC12000
S0097
100C1297
100C1287
DS0319
DS0820
100C1295
DSW480
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DSWM5
Abstract: No abstract text available
Text: Microwave Integrated Circuit Switches • GaAs, PIN Diode, & Schottky Diode Technology • Thin-Film MIC Technology • Plug In DIP Style Packages • Flatpack Packages • Connectorized Packages • Full Military Screening Available See Page 320 DAICO INDUSTRIES
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DC-12000
DS0519
DC-400
100C0347
DSWT1981
DSWT2180
DS0097
100C1297
100C1287
DS0319
DSWM5
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH400 SFH401 SFH402 GaAs INFRARED EMITTER • Half Angle - SFH400, ±6° - SFH401, ±15° - SFH402, ±40° • GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process • Emits Radiation in Near Infrared Range • Cathode Electrically Connected to
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SFH400
SFH401
SFH402
SFH400,
SFH401,
SFH402,
SFH400/401:
SFH402:
SFH400:
SFH480
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1N4148
Abstract: IN4148W 1N4148 sod123 DIODE 1N4148 package SO thermal diode 1n4148 1n4148 mark 1N4148W 1R SOD-123 DIODE 1N4148 characteristics 1N4148 Fast Switching Diode
Text: 1N4148, 1N4148W Silicon Epitaxial Planar Diode fast switching diodes. Packages -D O -3 5 1N4148 - SO D -123 ( IN 4 148W) -Cathode Mark DO-35 G lass Case Weight approx. 0.13 g Dimensions in mm in 1 J 1 min.0.25 3 SOD-123 Plastic Package Weight approx. 0.01 g
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1N4148,
1N4148W
1N4148)
DO-35
OD-123
150ll2)
1N4148
IN4148W
1N4148W
1N4148 sod123 DIODE
1N4148 package SO
thermal diode 1n4148
1n4148 mark
1R SOD-123
DIODE 1N4148 characteristics
1N4148 Fast Switching Diode
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4002P
Abstract: No abstract text available
Text: Standard Forming Axial type diode They are asked to place order such 4002P 5 as com bination 1st and 2nd code. [ U n it : m m ] Standard Forming Single In-line Package Bridge Diodes Note 1. S tick type m agazine is available on code No.4101 Note 2 Stick type m agazine is available on code N o.4103
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4002P
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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transistor KSP 13 801
Abstract: C2 KNR 1A daewoo cj 4002Y DAEWOO LCD display 1602 LC018 daewoo lcd power supply LED display for radio radio fm lcd
Text: \ PMC 4002 CMOS LSI C PLL FREQUENCY SYNTHESIZER AND CONTROLLER FOR FM / MW / LW TUNER The DMC 4002 is CMOS LSI chips developed for world-wide FM / MW / LW tuning with PLL frequency synthesizer system. The DMC 4002 can make a compact and high performance FM / MW / LW tuner with clock function for high-end car stereo,
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64-pin
19-llj
transistor KSP 13 801
C2 KNR 1A
daewoo cj
4002Y
DAEWOO
LCD display 1602
LC018
daewoo lcd power supply
LED display for radio
radio fm lcd
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Untitled
Abstract: No abstract text available
Text: . AL LE GR O K r.i' • • MICROSYSTEMS INC 13 D ■ 0SDM33fl D 0 0 3 7 Ô S Ô T -9 1 -0 1 PROCESS TRJ Process TRJ Silicon Rectifier Diode This silicon epitaxial diode is a 200V, 1.0A rectifier designed to m eet 1N4001, 1N 4002, and 1N 4003 specifications.
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0SDM33fl
1N4001,
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