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    DIODE IN 4002 Search Results

    DIODE IN 4002 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE IN 4002 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    T161-160

    Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
    Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.


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    ISO9001 to300 SF15CL 500Aelement T161-160 SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100 PDF

    Untitled

    Abstract: No abstract text available
    Text: UF4001G UF4007G 1.0A GLASS PASSIVATED ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency


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    UF4001G UF4007G DO-41, MIL-STD-202, DO-41 PDF

    SIDC01D120H6

    Abstract: No abstract text available
    Text: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:


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    SIDC01D120H6 Q67050-A4171A001 4002S, SIDC01D120H6 PDF

    A001

    Abstract: SIDC01D120H6
    Text: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:


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    SIDC01D120H6 Q67050-A4171sawn 4002S, A001 SIDC01D120H6 PDF

    Untitled

    Abstract: No abstract text available
    Text: UF4001 UF4007 1.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes


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    UF4001 UF4007 DO-41, MIL-STD-202, DO-41 PDF

    SIDC01D120H6

    Abstract: No abstract text available
    Text: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:


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    SIDC01D120H6 Q67050-A4171A001 4002S, SIDC01D120H6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:


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    SIDC01D120H6 Q67050-A4171sawn 4002S, PDF

    PS2381

    Abstract: PS2381-1 GB8898 GB8898-2001 GB4943-2001 CQC10001041058 CQC10001041059 EN60747-5-2 VDE0884 PS2381-1Y-V-F3-AX
    Text: PHOTOCOUPLER PS2381-1 4-PIN LSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 115°C −NEPOC Series− DESCRIPTION The PS2381-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is mounted in a plastic 4-LSOP Long Mini-Flat Small Outline Package for high density applications.


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    PS2381-1 PS2381-1 PS2381 GB8898 GB8898-2001 GB4943-2001 CQC10001041058 CQC10001041059 EN60747-5-2 VDE0884 PS2381-1Y-V-F3-AX PDF

    PS2381

    Abstract: GB8898-2001 PS2381-1 GB4943-2001 PS2381-1Y-V-F3-AX GB8898 CQC10001041058 CQC10001041059 EN60747-5-2 VDE0884
    Text: DATA SHEET PHOTOCOUPLER PS2381-1 4-PIN LSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 115°C −NEPOC Series− DESCRIPTION The PS2381-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is mounted in a plastic 4-LSOP Long Mini-Flat Small Outline Package for high density applications.


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    PS2381-1 PS2381-1 PS2381 GB8898-2001 GB4943-2001 PS2381-1Y-V-F3-AX GB8898 CQC10001041058 CQC10001041059 EN60747-5-2 VDE0884 PDF

    PS2861B-1Y-F3

    Abstract: EN60747-5-2 PS2861B-1 VDE0884 100TA PS2861b
    Text: PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package


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    PS2861B-1 PS2861B-1 PS2861B-1Y-F3 EN60747-5-2 VDE0884 100TA PS2861b PDF

    PS2381-1Y-V-AX

    Abstract: No abstract text available
    Text: DATA SHEET PHOTOCOUPLER PS2381-1 4-PIN LSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 115°C −NEPOC Series− DESCRIPTION The PS2381-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is mounted in a plastic 4-LSOP Long Mini-Flat Small Outline Package for high density applications.


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    PS2381-1 PS2381-1 PS2381-1-F3: PS2381-1Y-V-AX PDF

    NEC 2703

    Abstract: High Density Mounting Type Photocoupler
    Text: DATA SHEET PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package


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    PS2861B-1 PS2861B-1 NEC 2703 High Density Mounting Type Photocoupler PDF

    PS2861B-1

    Abstract: NEC 2703 PS2861b EN60747-5-2 VDE0884 PS2861B-1Y-V-F3
    Text: DATA SHEET PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package


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    PS2861B-1 PS2861B-1 NEC 2703 PS2861b EN60747-5-2 VDE0884 PS2861B-1Y-V-F3 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package


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    PS2861B-1 PS2861B-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency


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    235kD5 OT-23 OT-143 11I181I8I88B PDF

    100C1295

    Abstract: DSW480
    Text: Microwave Integrated Circuit Switches • GaAs, PIN Diode, & Schottky Diode Technology • Thin-Film MIC Technology • Plug In DIP Style Packages • Flatpack Packages • Connectorized Packages • Full Military Screening Available See Page 270 DAICO INDUSTRIES


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    DC12000 S0097 100C1297 100C1287 DS0319 DS0820 100C1295 DSW480 PDF

    DSWM5

    Abstract: No abstract text available
    Text: Microwave Integrated Circuit Switches • GaAs, PIN Diode, & Schottky Diode Technology • Thin-Film MIC Technology • Plug In DIP Style Packages • Flatpack Packages • Connectorized Packages • Full Military Screening Available See Page 320 DAICO INDUSTRIES


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    DC-12000 DS0519 DC-400 100C0347 DSWT1981 DSWT2180 DS0097 100C1297 100C1287 DS0319 DSWM5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SFH400 SFH401 SFH402 GaAs INFRARED EMITTER • Half Angle - SFH400, ±6° - SFH401, ±15° - SFH402, ±40° • GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process • Emits Radiation in Near Infrared Range • Cathode Electrically Connected to


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    SFH400 SFH401 SFH402 SFH400, SFH401, SFH402, SFH400/401: SFH402: SFH400: SFH480 PDF

    1N4148

    Abstract: IN4148W 1N4148 sod123 DIODE 1N4148 package SO thermal diode 1n4148 1n4148 mark 1N4148W 1R SOD-123 DIODE 1N4148 characteristics 1N4148 Fast Switching Diode
    Text: 1N4148, 1N4148W Silicon Epitaxial Planar Diode fast switching diodes. Packages -D O -3 5 1N4148 - SO D -123 ( IN 4 148W) -Cathode Mark DO-35 G lass Case Weight approx. 0.13 g Dimensions in mm in 1 J 1 min.0.25 3 SOD-123 Plastic Package Weight approx. 0.01 g


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    1N4148, 1N4148W 1N4148) DO-35 OD-123 150ll2) 1N4148 IN4148W 1N4148W 1N4148 sod123 DIODE 1N4148 package SO thermal diode 1n4148 1n4148 mark 1R SOD-123 DIODE 1N4148 characteristics 1N4148 Fast Switching Diode PDF

    4002P

    Abstract: No abstract text available
    Text: Standard Forming Axial type diode They are asked to place order such 4002P 5 as com bination 1st and 2nd code. [ U n it : m m ] Standard Forming Single In-line Package Bridge Diodes Note 1. S tick type m agazine is available on code No.4101 Note 2 Stick type m agazine is available on code N o.4103


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    4002P PDF

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    PDF

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


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    TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 PDF

    transistor KSP 13 801

    Abstract: C2 KNR 1A daewoo cj 4002Y DAEWOO LCD display 1602 LC018 daewoo lcd power supply LED display for radio radio fm lcd
    Text: \ PMC 4002 CMOS LSI C PLL FREQUENCY SYNTHESIZER AND CONTROLLER FOR FM / MW / LW TUNER The DMC 4002 is CMOS LSI chips developed for world-wide FM / MW / LW tuning with PLL frequency synthesizer system. The DMC 4002 can make a compact and high performance FM / MW / LW tuner with clock function for high-end car stereo,


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    64-pin 19-llj transistor KSP 13 801 C2 KNR 1A daewoo cj 4002Y DAEWOO LCD display 1602 LC018 daewoo lcd power supply LED display for radio radio fm lcd PDF

    Untitled

    Abstract: No abstract text available
    Text: . AL LE GR O K r.i' • • MICROSYSTEMS INC 13 D ■ 0SDM33fl D 0 0 3 7 Ô S Ô T -9 1 -0 1 PROCESS TRJ Process TRJ Silicon Rectifier Diode This silicon epitaxial diode is a 200V, 1.0A rectifier designed to m eet 1N4001, 1N 4002, and 1N 4003 specifications.


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    0SDM33fl 1N4001, PDF