035H
Abstract: IRFPE30
Text: PD - 95556 IRG4PC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter
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IRG4PC30FDPbF
O-247AC
IRFPE30
035H
IRFPE30
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035H
Abstract: IRFPE30
Text: PD - 95556 IRG4PC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter
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IRG4PC30FDPbF
O-247AC
IRFPE30
035H
IRFPE30
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IRF1010 E DATASHEET
Abstract: IRF1010 IRG4BC30FD1 igbt rectifier circuit IRG4BC
Text: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter
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IRG4BC30FD1
20kHz
O-220AB
char10
FD100H06A5.
O-220
IRF1010 E DATASHEET
IRF1010
IRG4BC30FD1
igbt rectifier circuit
IRG4BC
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swiching transistor
Abstract: 9561 600v 8A ultra fast recovery diode to220
Text: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter
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IRG4BC30FD1PbF
20kHz
O-220AB
Minimi10
FD100H06A5.
O-220
swiching transistor
9561
600v 8A ultra fast recovery diode to220
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Untitled
Abstract: No abstract text available
Text: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter
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5614A
IRG4BC30FD1PbF
20kHz
O-220AB
FD100H06A5.
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Untitled
Abstract: No abstract text available
Text: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter
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IRG4BC30FD1
20kHz
O-220AB
FD100H06A5.
O-220
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IRF1010
Abstract: IRG4BC30FD1 TO220AB IGBT
Text: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter
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IRG4BC30FD1
20kHz
O-220AB
FD100H06A5.
O-220
IRF1010
IRG4BC30FD1
TO220AB IGBT
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555 triangular wave
Abstract: IRG4BC30FD1PBF
Text: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter
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IRG4BC30FD1PbF
20kHz
O-220AB
FD100H06A5.
O-220
555 triangular wave
IRG4BC30FD1PBF
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Untitled
Abstract: No abstract text available
Text: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter
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5614A
IRG4BC30FD1PbF
20kHz
O-220AB
FD100H06A5.
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Untitled
Abstract: No abstract text available
Text: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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-91451B
IRG4BC30FD
O-220AB
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR PG03JSUSC TECHNICAL DATA Single Line TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. L A H F Transient protection for data lines to 1 E 350 Watts peak pulse power tp=8/20 s K CATHODE MARK
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PG03JSUSC
5/50ns)
8/20us
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IRG4PC30FD
Abstract: No abstract text available
Text: PD 9.1460A IRG4PC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4PC30FD
O-247AC
IRG4PC30FD
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IRG4BC30FD
Abstract: fl 014
Text: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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-91451B
IRG4BC30FD
O-220AB
IRG4BC30FD
fl 014
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IRG4PC30FD
Abstract: No abstract text available
Text: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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91460B
IRG4PC30FD
O-247AC
O-247AC
IRG4PC30FD
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IRG4PC30FD
Abstract: No abstract text available
Text: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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91460B
IRG4PC30FD
O-247AC
O-247AC
IRG4PC30FD
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Untitled
Abstract: No abstract text available
Text: PD - 95556 IRG4PC30FDPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter
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IRG4PC30FDPbF
O-247AC
IRFPE30
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Untitled
Abstract: No abstract text available
Text: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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91460B
IRG4PC30FD
O-247AC
O-247AC
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IRG4BC30FD
Abstract: No abstract text available
Text: PD 9.1451A IRG4BC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4BC30FD
O-220AB
IRG4BC30FD
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marking 34A
Abstract: PG03JSUSC ipp34
Text: SEMICONDUCTOR PG03JSUSC TECHNICAL DATA Single Line TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. L A H F ・Transient protection for data lines to 1 E ・350 Watts peak pulse power tp=8/20 s K CATHODE MARK
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PG03JSUSC
5/50ns)
8/20us
marking 34A
PG03JSUSC
ipp34
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Untitled
Abstract: No abstract text available
Text: PD - 94938A IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT C Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter parameter
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4938A
IRG4BC30FDPbF
20kHz
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 94938A IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT C Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter parameter
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4938A
IRG4BC30FDPbF
20kHz
O-220AB
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PG03JSUSC
Abstract: No abstract text available
Text: SEMICONDUCTOR PG03JSUSC TECHNICAL DATA Single Line TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES ・350 Watts peak pulse power tp=8/20 s ・Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
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PG03JSUSC
5/50ns)
PG03JSUSC
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IRG4BC30FD
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet PD 9.1451 IRG4BC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20
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IRG4BC30FD
O-220AB
IRG4BC30FD
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IRG4PC30FD
Abstract: 5C100A
Text: Previous Datasheet Index Next Data Sheet PD 9.1460 IRG4PC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20
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IRG4PC30FD
O-247AC
IRG4PC30FD
5C100A
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