Untitled
Abstract: No abstract text available
Text: Part: ICTE-5 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 300.00 Maximum Temperature Max Temp (°C ) 0.00
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Untitled
Abstract: No abstract text available
Text: Part: ICTE-15C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00
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ICTE-15C
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zener diode 12c
Abstract: No abstract text available
Text: Part: ICTE-12C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00
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ICTE-12C
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zener diode 12c
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Untitled
Abstract: No abstract text available
Text: Part: ICTE-18 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity
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ICTE-18
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Untitled
Abstract: No abstract text available
Text: Part: ICTE-8C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 50.00 Maximum Temperature Max Temp (°C ) 0.00
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18c zener diode
Abstract: ZENER 18C 2480 zener
Text: Part: ICTE-18C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00
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ICTE-18C
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18c zener diode
ZENER 18C
2480 zener
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Untitled
Abstract: No abstract text available
Text: Part: ICTE-8 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 25.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity
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Untitled
Abstract: No abstract text available
Text: Part: ICTE-10 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity
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ICTE-10
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10c zener
Abstract: No abstract text available
Text: Part: ICTE-10C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00
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ICTE-10C
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10c zener
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ICTE-22
Abstract: No abstract text available
Text: Part: ICTE-22 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity
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ICTE-22
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diode 9146
Abstract: diode icte 36 diode icte 18 MPTE-45 MPTE-45C ICTE
Text: Silicon Avalanche Diodes 1500 Watt Axial Leaded Transient Voltage Suppressors ICTE/MPTE Series The ICTE/MPTE series 1500 W transient suppressors are designed specifically for protection of CMOS, NMOS, BiMOS, and other integrated circuits available today for TTL, DTL, ECL, RTL, and
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ICTE-10/MPTE-10
ICTE-12/MPTE-12
ICTE-15/MPTE-15
ICTE-18/MPTE-18*
ICTE-22/MPTE-22
diode 9146
diode icte 36
diode icte 18
MPTE-45
MPTE-45C
ICTE
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TVS Transient Voltage Suppressors
Abstract: TVS SOD-123 SA5* sot-23 258 sot MMBZ5221ELT1 MM3Z2V4S
Text: Table of Contents Page Page Numeric Data Sheet Listing Numeric Data Sheet Listing . . . . . . . . . . . . . . . . . . . . . . . . . 4 Chapter 3: Case Outlines and Package Dimensions Chapter 1: Selector Guide Case Outlines and Package Dimensions . . . . . . . . . . . . 280
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OT-23
SC-74
SMS05T1
TVS Transient Voltage Suppressors
TVS SOD-123
SA5* sot-23
258 sot
MMBZ5221ELT1
MM3Z2V4S
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IN6277
Abstract: in6275 IN6282 IN6281 diode p6000 j IN6287 In6283 IN6284 in6285 in6276
Text: TRANSIENT VOLTAGE SUPPRESSORS INTRODUCTION TO TRANSIENT VOLTAGE SUPPRESSORS General Semiconductor delivers “state of the art” Transient Voltage Suppressors TVS . Based on controlled avalanche technology, these voltage clamping devices utilize a specific soft solder construction. This physical design enables these
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5KE130
P6KE150
P6KE160
IN6300
5KE160
P6KE170
IN6301
5KE170
P6KE180
IN6302
IN6277
in6275
IN6282
IN6281
diode p6000 j
IN6287
In6283
IN6284
in6285
in6276
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UJT 2N2646 specification
Abstract: GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram
Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have
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1N6373
1N6381
ICTE-36,
MPTE-45)
UJT 2N2646 specification
GE Transient Voltage Suppression Manual
Triac motor speed control
UJT-2N2646 PIN DIAGRAM DETAILS
marking dp U1 sot363
UJT pin identification
TO-220 MOS
UJT 2N2646
DO41 PACKAGE diode marking S6
sine wave UPS inverter circuit diagram
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orient 817b
Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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DL150/D
May-2001
r14525
DLD601
orient 817b
UJT-2N2646
UJT-2N2646 PIN DIAGRAM DETAILS
L 1011 817B
CI 817b
MDA2500
UJT 2N2646
Zener Diode SOT-23 929b
2N2646 pin diagram
diode 913b
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GE Transient Voltage Suppression Manual
Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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DL150/D
May-2001
no422-3781
r14525
DL150/D
GE Transient Voltage Suppression Manual
diode 930 6V8A
2n2646 practical application circuits
UJT 2N2646
Transient Voltage Suppression Manual
Bidirectional Diode Thyristors 1.5ke 30A
Zener Diode SOD323 pdz 4 .7b
919b diode
varistor SVC 471 14
melf diode marking code
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AP6KE
Abstract: ICTE-10 ICTE-15 P4KE16A P6KE16A
Text: SELECTING THE OPTIMUM TRANSIENT VOLTAGE SUPPRESSOR Although the published data for several transient suppressors may appear similar enough to make the devices seem interchangeable, careful analysis can rule out nearly identical parts whose use could prove disastrous.
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suppressor 5v
Abstract: zener Transient Voltage Suppressor Transient Voltage Suppressor diode application note ICTE-10 ICTE-15 P4KE16A P6KE16A AP6KE
Text: SELECTING THE OPTIMUM VOLTAGE TRANSIENT SUPPRESSOR Although the published data for several transient suppressors may appear similar enough to make the devices seem interchangeable, careful analysis can rule out nearly identical parts whose use could prove disastrous.
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diode icte 36
Abstract: ICTE12 ICTE22 ICTE36C c258 thomson transil diode de puissance
Text: S-THOMSON S IC 59C O T H O M S O N - C S F j C T 02690 E g g . DIVISION SEMICONDUCTEURS. ^ q D 1^ 2^ 537 D — T . QüüatiTG - I l - 2 - 3 | C T E 4 5 ' C ' U N I - A N D BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES DE PROTECTION U N I - E T BIDIRECTIONNELLES
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kW/8-20
diode icte 36
ICTE12
ICTE22
ICTE36C
c258
thomson transil
diode de puissance
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Untitled
Abstract: No abstract text available
Text: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 TVS Diodes - ICTE Low Clamping Specifications - Electrical Characteristics j 10/1000jjs | 10/1000jjs i Maximum I Maximum | Maximum 10/1000jjs Rated j Minimum j Stand By ! Clamping j Clamping jRated Peak
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10/1000jjs
10/1000jjs
CTE-10
jICTK-12
iICTH-15
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Untitled
Abstract: No abstract text available
Text: Selecting the Optimum Transient Voltage Suppressor Although the published data for several transient suppressors may appear similar enough to make the devices seem interchangeable, careful analysis can rule out nearly identical parts whose use could prove disastrous.
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sm58a
Abstract: DIODE ZENER BZW 06 903 diode BZW 04 DIODE ZENER 8ZW06 sot 903 DO-214 ea D0-214AB diode zener SMB case d0214ac REFLOW
Text: TVS AND ZENER PACKAGING CODES Standard Package Code Anti-static Package Codes 1 51 Bulk 2 52 DO-214/215AA SMB , 12mm Tape, T Diameter Plastic Reel Packaging Description DO-218AA (SM5-8A), 24mm Tape, 13" Dia. Paper Reel, Anode Towards Sprocket Hole 2D 2E DO-218AA (SM5-8A), 24mm Tape, 13” Dia. Paper Reel, Cathode Towards Sprocket Hole
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DO-214/215AA
DO-218AA
DO-214AC
sm58a
DIODE ZENER BZW 06
903 diode
BZW 04 DIODE ZENER
8ZW06
sot 903
DO-214 ea
D0-214AB
diode zener SMB case
d0214ac REFLOW
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32n20
Abstract: 32N20E
Text: M O T O R O LA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTW32N20E TMOS E-FET ™ Power Field Effect Transistor TO -247 w ith Isolated Mounting Hole M otorola Preferred Device TMOS POWER FET 32 AMPERES 200 VOLTS N-Channel Enhancement-Mode Silicon Gate
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32N20E
32n20
32N20E
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TP10N10E
Abstract: transistor Ip
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP10N10EL Logic Level TM O S E -FE T ™ P o w er Field E ffe c t Tran sistor M otorola P re fe rre d D evice N-Channel Enhancement-Mode Silicon Gate This a d va n ce d TM O S p o w e r F E T is d e sig n e d to w ith sta n d high
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MTP10N10EL
TP10N10E
transistor Ip
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