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    DIODE HITACHI SCHOTTKY Search Results

    DIODE HITACHI SCHOTTKY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    DIODE HITACHI SCHOTTKY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    714 diode varicap

    Abstract: hitachi diode Hitachi Zener diodes 1SS106 04BZ Hitachi diodes using a zener diode as a varicap 05AZ HRC0203A GENERAL PURPOSE UHF MW MIXER DIODE
    Text: DIODE Hitachi Diode Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI DIODE 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


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    ADE-A08-005E 714 diode varicap hitachi diode Hitachi Zener diodes 1SS106 04BZ Hitachi diodes using a zener diode as a varicap 05AZ HRC0203A GENERAL PURPOSE UHF MW MIXER DIODE PDF

    1S2473 DIODE equivalent

    Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
    Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5


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    HSN278WK" HZC10 HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx PDF

    Untitled

    Abstract: No abstract text available
    Text: HSB88WS Silicon Schottky Barrier Diode for Double Balanced Mixer HITACHI Features • • • • Small ÀVFand AC. Good for surface mounting on printed circuit board. Each diode can be biased. Wideband operation. Ordering Information Type No. M ark Package Code


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    HSB88WS ADE-208-026B HSB88W 200pF, PDF

    HSB88WS

    Abstract: No abstract text available
    Text: ADE-208-026B Z HSB88WS Silicon Schottky Barrier Diode for Double Balanced Mixer Preliminary Rev. 2 Sep. 1993 HITACHI Features Pin Arrangement • Small AVp and AC. • Good for surface mounting on printed circuit board. • Each diode can be biased. • Wideband operation.


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    ADE-208-026B HSB88WS HSB88WS PDF

    Untitled

    Abstract: No abstract text available
    Text: HSM126S Silicon Schottky Barrier Diode for System Protection HITACHI ADE-208-111C Z Rev. 3 May. 1995 Features • HSM126S which is connected in series configuration enable to protect electric systems from missoperation against external + and - surge. •


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    HSM126S ADE-208-111C HSM126S SC-59A PDF

    HITACHI 1SS106

    Abstract: No abstract text available
    Text: 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching HITACHI ADE-208-153A Z Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No.


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    1SS106 ADE-208-153A DO-35 200pF, HITACHI 1SS106 PDF

    Untitled

    Abstract: No abstract text available
    Text: HSU276 Silicon Schottky Barrier Diode for Mixer HITACHI ADE-208-078F Z Rev 6 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information


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    HSU276 ADE-208-078F 200pF PDF

    Untitled

    Abstract: No abstract text available
    Text: ADE-208-154 Z 1SS108 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching HITACHI Features Preliminary Rev. 0 Oct 1993 Outline • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.


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    1SS108 ADE-208-154 DO-35 1SS108 DO-35 SC-48 PDF

    DO-35 rectifier

    Abstract: diode hitachi schottky hitachi rectifier 1SS108 1SS108 DIODE
    Text: 1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching HITACHI ADE-208-154A Z Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No.


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    1SS108 ADE-208-154A 1SS108 DO-35 40MHz, 200pF, 200nA DO-35 rectifier diode hitachi schottky hitachi rectifier 1SS108 DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High speed Switching HITACHI ADE-208-298A Z Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • Small glass package (MHD) enables easy mounting and high reliability.


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    1SS198 ADE-208-298A 40MHz, 200pF, DO-34 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS88 Silicon Schottky Barrier Diode for CATV Balanced Mixer HITACHI ADE-208-187 Z Preliminary Rev. 0 Oct. 1993 Features • Low capacitance. (C = 0.97pF max) • High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Code


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    1SS88 ADE-208-187 DO-35 200pF, SC-48 PDF

    Untitled

    Abstract: No abstract text available
    Text: HSM88WK Silicon Schottky Barrier Diode for Balanced Mixer HITACHI ADE-208-049F Z Rev 6 Jul1998 Features • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.


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    HSM88WK ADE-208-049F Jul1998 HSM88W 400nA SC-59A PDF

    diode lt 445

    Abstract: No abstract text available
    Text: ADE-208-243B Z HRW2502B Silicon Schottky Barrier Diode for Rectifying HITACHI Features Rev. 2 Ja n .1996 Pin Arrangement • Low forward voltage drop and suitable for high effifiency rectifying. • Full molded fin enables easy insulation from heat sink.


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    HRW2502B ADE-208-243B 2502B W2502B O-220FM O-220FM diode lt 445 PDF

    1SS106

    Abstract: HITACHI 1SS106 DO-35 rectifier ADE-208-153 glass diode white band 1SS106 diode
    Text: ADE-208-153 Z 1SS106 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching Preliminary Rev. 0 Oct 1993 HITACHI Features Outline • Detection efficiency is very good. =CZ8= • Small temperature coefficient. • High reliability with glass seal.


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    ADE-208-153 1SS106 DO-35 ESD-Ca140pA 1SS106 DO-35 SC-48 HITACHI 1SS106 DO-35 rectifier ADE-208-153 glass diode white band 1SS106 diode PDF

    MARK A Package Code URP

    Abstract: No abstract text available
    Text: ADE-208-235D Z HRU0302A Silicon Schottky Barrier Diode for Rectifying HITACHI Outline Features • Low forward voltage drop and suitable for high effifiency forward current. • Ultra small Resin Package (URP) is suitable for high density surface mounting and


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    HRU0302A ADE-208-235D 10msec HRU0302A MARK A Package Code URP PDF

    HRW34

    Abstract: No abstract text available
    Text: HRW34 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features • Low forward voltage drop. VF= 0.80V max • High reverse voltage. (VR= 90V max) Ordering Information Type No. Laser Mark Package Code HRW34 HRW34 TO-22QAB Pin Arrangement


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    HRW34 ADE-208-157B HRW34 TQ-220AB 10msec T0-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: HSU276 Silicon Schottky Barrier Diode for Mixer HITACHI ADE-208-078F Z Rev 6 June 1996 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information


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    HSU276 ADE-208-078F 200pF 10OjiA PDF

    Untitled

    Abstract: No abstract text available
    Text: APE-208-401 Z HRF503A Silicon Schottky Barrier Diode for Rectifying HITACHI Features Outline • Low forward voltage drop and suitable for high effifiency rectifying. • DO-214 is suitable for high density surface mounting and high speed assembly. Cathode mark


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    APE-208-401 HRF503A DO-214 HRF503A DO-214 PDF

    HSM88WK

    Abstract: No abstract text available
    Text: ADE-208-049ECZ HSM88WK Silicon Schottky Barrier Diode for Mixer HITACHI Features Rev. 5 Jul. 1994 Pin Arrangement • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. 4P Ordering Information


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    HSM88WK ADE-208-049ECZ) HSM88WK 400nA 200pF. SC-59A PDF

    Untitled

    Abstract: No abstract text available
    Text: HSM88AS Silicon Schottky Barrier Diode for Balanced Mixer HITACHI ADE-208-046E Z Rev 5 Jul1998 Features • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.


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    HSM88AS ADE-208-046E Jul1998 400nA SC-59A PDF

    diode hitachi schottky

    Abstract: HRW26F
    Text: HRW26F Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features • Low forward voltage drop. VF= 0.55V max • High reverse voltage. (VR= 40V max) • Full molded fin enables easy insulation from heat sink. Ordering Information Type No.


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    HRW26F ADE-208-156B HRW26F TQ-220FM 10msec O-22QFM diode hitachi schottky PDF

    HRW36

    Abstract: No abstract text available
    Text: HRW36 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features • Low forward voltage drop. VF= 0.80V max • High reverse voltage. (VR= 90V max) Ordering Information Type No. Laser Mark Package Code HRW36 HRW36 TO-22QAB Pin Arrangement


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    HRW36 ADE-208-159B HRW36 TQ-220AB 10msec T0-220AB PDF

    HRW2502B

    Abstract: No abstract text available
    Text: HRW2502B Silicon Schottky Barrier Diode for Rectifying HITACHI ADE-208-243B Z Rev. 2 Jan. 1996 Features • Low forward voltage drop and suitable for high effifiency rectifying . • Full molded fin enables easy insulation from heat sink. Ordering Information


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    HRW2502B ADE-208-243B HRW2502B W2502B TQ-220FM O-22QFM PDF

    Untitled

    Abstract: No abstract text available
    Text: ADE-208-039D Z HSM276S Silicon Schottky Barrier Diode for Balanced Mixer HITACHI Features Rev.4 Aug. 1994 Pin Arrangement • High forward current, Low capacitance. • HSM276S which is interconnected in series configuration is designed for balanced mixer use


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    ADE-208-039D HSM276S HSM276S SC-59A PDF