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Abstract: No abstract text available
Text: SKR 2F50 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Diode Fast Recovery Rectifier Diode SKR 2F50 ,"
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69decrease
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diode 4f
Abstract: No abstract text available
Text: SKN 2F50 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Diode Fast Recovery Rectifier Diode SKN 2F50 1"
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Untitled
Abstract: No abstract text available
Text: SKN 140F power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Diode Fast Recovery Rectifier Diode SKN 140F SKR 140F
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Untitled
Abstract: No abstract text available
Text: SKN 60F power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud diode Fast Recovery Rectifier Diode SKN 60F SKR 60F
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Untitled
Abstract: No abstract text available
Text: BB814-G www.vishay.com Vishay Semiconductors Dual Varicap Diode FEATURES 3 • Silicon epitaxial planar diode • Common cathode • AEC-Q101 qualified 1 2 • Base P/N-HG3 - green, automotive grade • Material categorization: For definitions of compliance please see
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BB814-G
AEC-Q101
OT-23
BB814-1-G
BB814-2-G
BB814-1-HG3-08
BB814-2-HG3-08
2002/95/EC.
2002/95/EC
2011/65/EU.
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Diode SJ 49 a
Abstract: Schematic/Diode SJ 49 a
Text: Series M50 Diode 60-100Amp • DIODE Modules Single- and three-phase diode circuits incorporate highly efficient thermal management to provide high surge capability, extended life, and reliable performance. Available in five circuits, all models come in an industry standard
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E72445)
60-100Amp
120Vac)
240Vac)
380Vac)
480Rev.
SJ/T11364
SJ/T11364
Diode SJ 49 a
Schematic/Diode SJ 49 a
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Untitled
Abstract: No abstract text available
Text: BB824-G www.vishay.com Vishay Semiconductors Dual Varicap Diode FEATURES • Silicon epitaxial planar diode 3 • Common cathode • High capacitance ratio • AEC-Q101 qualified 1 2 • Base P/N-HG3 - green, automotive grade • Material categorization: For definitions of compliance please see
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BB824-G
AEC-Q101
OT-23
BB824-2-G
BB824-3-G
BB824-2-HG3-08
BB824-3-HG3-08
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: LTC4229 Ideal Diode and Hot Swap Controller Features Description Ideal Diode and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diode n Protects Output Voltage from Input Brownouts n Allows Safe Hot Swapping from a Live Backplane
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LTC4229
24-Lead
MSOP-16
DFN-16
LTC4353
LTC4355
SO-16,
DFN-14
MSOP-16
LTC4357
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AOZ8231NI-05L
Abstract: AOZ8231 alpha date code System sod923
Text: AOZ8231 One-line Bi-directional TVS Diode General Description Features The AOZ8231 is a one-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ● This device incorporates one TVS diode in an ultra-small
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AOZ8231
AOZ8231
OD923
OD923
AOZ8231NI-05L
alpha date code System
sod923
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G20N60B3D
Abstract: HGTG20N60B3D LD26 RHRP3060 G20N60B3
Text: HGTG20N60B3D Semiconductor 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and
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HGTG20N60B3D
HGTG20N60B3D
150oC.
RHRP3060.
G20N60B3D
LD26
RHRP3060
G20N60B3
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SML-010
Abstract: No abstract text available
Text: DEMO MANUAL DC2060A LTC4229 Single Ideal Diode and Hot Swap Controller Description Demonstration circuit 2060A is a single-rail circuit with an ideal diode and Hot Swap functionality provided by the LTC 4229, ideal diode and Hot Swap controller. The main components of this circuit are two series connected
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DC2060A
LTC4229
DC2060A
LTC4229
dc2060af
SML-010
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, % 7 28 & 1 6*" & -. * & : -9 6 * "
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DD800S33K2C
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DD800S33K2C
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, % 7 28 & 1 6*" & -. * & : -9 6 * "
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DD800S33K2C
DD800S33K2C
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD800S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, % 7 28 & 1 6*" & -. * & : -9 6 * "
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DD800S33K2C
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G20N60B3D
Abstract: G20N60B hg*20n60 Hgtg20n60
Text: HGTG20N60B3D S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and
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HGTG20N60B3D
HGTG20N60B3D
150oC.
RHRP3060.
G20N60B3D
G20N60B3D
G20N60B
hg*20n60
Hgtg20n60
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5B12
Abstract: FP50R06W2E3 WG01 KT4I
Text: Technische Information / technical information FP50R06W2E3_B11 IGBT-Module IGBT-modules EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode
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FP50R06W2E3
5B12
WG01
KT4I
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C532 diode
Abstract: b16/41289
Text: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode
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FP50R06W2E3
14BBFB'
A4F32
F223B
1231423567896A4BC3D6E23F
61F7DC
C532 diode
b16/41289
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NW32
Abstract: DF1400R12IP4D 1N565 9k556
Text: Technische Information / technical information DF1400R12IP4D IGBT-Module IGBT-modules PrimePACK 3 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode PrimePACK™3 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode
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DF1400R12IP4D
NW32
DF1400R12IP4D
1N565
9k556
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EBF83
Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
Text: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs
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EBF83
7R05998
7R05S99
EBF83
EN50011
Scans-0017839
CD2A
battery operated cdi
2235S
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UAF41
Abstract: CDA 5,5 Mc CDA 5.5 MC alim H242 551-va
Text: UAF41 DIODE-PENTODE with variable mutual conductance for use as H.F., I.F. and L.F. amplifier DIODE-PENTHODE à pente variable pour l'utilisation comme amplificatrice H.F., M.F. et B.F. DIODE-PENTHODE mit veränderlicher Steilheit zur Ver wendung als H.F.-, Z.F.- und H.F. Verstärker
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UAF41
UAF41
CDA 5,5 Mc
CDA 5.5 MC
alim
H242
551-va
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12N60D1D
Abstract: 12n60d1
Text: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package Features • 12A,600V JE D E C S T Y LE TO -247 • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description
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HGTG12N60D1D
500ns
12N60D1D
12n60d1
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20n60b3d
Abstract: G20N60B
Text: HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Package Features • 40A, 600V at T c = +25°C JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150°C • Short Circuit Rated • Low Conduction Loss • Hyperfast Anti-Parallel Diode
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HGTG20N60B3D
140ns
O-247
HGTG20N60B3D
RHRP3Q60.
20n60b3d
G20N60B
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EAF42
Abstract: ech41 philips EAF 42 ECH 42 philips diagram fr 310 Philips schema philips fr 310 RG211 ECH42 390SV
Text: IËÂF42 PHILIPS DIODE-PENTODE with variable mutual conductance for use as R.F., I.F. or A.F. amplifier DIODE-PENTHODE à pente variable pour l'utilisation comme amplificatrice H.F., M.F. ou B.F. DIODE-PENTODE mit veränderlicher Steilheit zur Ver wendung als HF-, ZF- oder NF-Verstärker
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EAF42
7R02634
110kil
EAF42
ech41
philips EAF 42
ECH 42
philips diagram fr 310
Philips schema
philips fr 310
RG211
ECH42
390SV
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PJ 969 diode
Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode
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500ns
HGTG20N50C1D
O-247
AN7254
AN7260)
PJ 969 diode
G20N50c
20N50C1D
pj 986 diode
F25 transistor
mosfet 20n
GE 639
pj 809
IGBT 500V 35A
igbt 20A 500V
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