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    DIODE HER 205 Search Results

    DIODE HER 205 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE HER 205 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HER201 HER208 WTE POWER SEMICONDUCTORS Pb 2.0A ULTRAFAST DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-15, Molded Plastic


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    PDF HER201 HER208 DO-15, MIL-STD-202, DO-15

    Diode HER 207G

    Abstract: HER208G diode 205G 206G 207G HER201G HER208G 100 DIODE DO15
    Text: HER201G HER208G WTE POWER SEMICONDUCTORS Pb 2.0A GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data


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    PDF HER201G HER208G DO-15, MIL-STD-202, DO-15 Diode HER 207G HER208G diode 205G 206G 207G HER201G HER208G 100 DIODE DO15

    Untitled

    Abstract: No abstract text available
    Text: HER201 HER208 2.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes


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    PDF HER201 HER208 DO-15, MIL-STD-202, DO-15

    Untitled

    Abstract: No abstract text available
    Text: HER201G HER208G WTE POWER SEMICONDUCTORS Pb 2.0A GLASS PASSIVATED ULTRAFAST DIODE Features  Glass Passivated Die Construction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data


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    PDF HER201G HER208G DO-15, MIL-STD-202, DO-15

    Diode HER 207

    Abstract: diode her 205 HER201 HER201-T3 HER201-TB HER204 HER205 HER206 HER208 RS-296-E
    Text: HER201 HER208 WTE POWER SEMICONDUCTORS Pb 2.0A ULTRAFAST DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-15, Molded Plastic


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    PDF HER201 HER208 DO-15, MIL-STD-202, DO-15 Diode HER 207 diode her 205 HER201 HER201-T3 HER201-TB HER204 HER205 HER206 HER208 RS-296-E

    16ans

    Abstract: IRF5305 U5305 IRFR5305 IRFU5305
    Text: PD 9.1402 PRELIMINARY IRFR/U5305 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.065Ω G ID = -25A S Description


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    PDF IRFR/U5305 IRFR5305) IRFU5305) EIA-541 16ans IRF5305 U5305 IRFR5305 IRFU5305

    IRFR5305

    Abstract: IRFU5305 U5305
    Text: Previous Datasheet Index Next Data Sheet PD 9.1402 PRELIMINARY IRFR/U5305 HEXFET Power MOSFET l l l l l l D Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -55V


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    PDF IRFR/U5305 IRFR5305) IRFU5305) EIA-541 IRFR5305 IRFU5305 U5305

    MOSFET 25 NE 50

    Abstract: No abstract text available
    Text: I SL6 2 8 8 1 C, I SL6 2 8 8 1 D Fe a t u r e s The I SL62881C provides a com plete solution for m icroprocessor and graphic processor core power supply with it ’s integrated gate drive. Based on I ntersil’s Robust Ripple regulator R3 technology, the PWM m odulator


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    PDF SL62881C 5m-1994. FN7596 MOSFET 25 NE 50

    PW1172

    Abstract: No abstract text available
    Text: APW1172 2.5A SWITCH STEP DOWN SWITCHING REGULATOR Features General Description • • • • 2.5A Internal Switch The A P W1172 is a s tep down monolithic power Operating Input Voltage from 4.8V to 22V switching regulat or with a swit ching current limit of


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    PDF APW1172 APW1172 250KHz W1172 PW1172

    CD7510

    Abstract: 117450 1174H5 472K ceramic capacitor tpo610l MBRS130LT 1174I 1N5818 marking 4p sot23 LTC1174-5
    Text: LTC1174 LTC1174-3.3/LTC1174-5 High Efficiency Step-Down and Inverting DC/DC Converter U FEATURES DESCRIPTIO • The LTC 1174 is a simple current mode DC/DC converter ideally suited for 9V to 5V, 5V to 3.3V or 5V to – 5V operation. With an internal 0.9Ω switch at a supply


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    PDF LTC1174 LTC1174-3 3/LTC1174-5 LTC1174 LT1611 OT-23 150mA OT-23 LTC1701 CD7510 117450 1174H5 472K ceramic capacitor tpo610l MBRS130LT 1174I 1N5818 marking 4p sot23 LTC1174-5

    117450

    Abstract: 1n914 surface mount diode diode 6v 33 MKS2 Series CTX100-4 BAT84 CD54-470 473 coilcraft d 2a step down dc to dc regulator so8 2N5210 c
    Text: LTC1174 LTC1174-3.3/LTC1174-5 High Efficiency Step-Down and Inverting DC/DC Converter U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1174 is a simple current mode DC/DC converter ideally suited for 9V to 5V, 5V to 3.3V or 5V to – 5V


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    PDF LTC1174 LTC1174-3 3/LTC1174-5 LTC1174 LT1611 OT-23 150mA OT-23 LTC1701 117450 1n914 surface mount diode diode 6v 33 MKS2 Series CTX100-4 BAT84 CD54-470 473 coilcraft d 2a step down dc to dc regulator so8 2N5210 c

    472K ceramic capacitor

    Abstract: 117450 117-4f MKS2 1N5818 LTC1148 LTC1174 LTC1174-5 1174HI wima capacitor 100uf
    Text: LTC1174 LTC1174-3.3/LTC1174-5 High Efficiency Step-Down and Inverting DC/DC Converter U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1174 is a simple current mode DC/DC converter ideally suited for 9V to 5V, 5V to 3.3V or 5V to – 5V


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    PDF LTC1174 LTC1174-3 3/LTC1174-5 LTC1174 LT1611 OT-23 150mA OT-23 LTC1701 472K ceramic capacitor 117450 117-4f MKS2 1N5818 LTC1148 LTC1174-5 1174HI wima capacitor 100uf

    Untitled

    Abstract: No abstract text available
    Text: LTC1174 LTC1174-3.3/LTC1174-5 High Efficiency Step-Down and Inverting DC/DC Converter FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 1174 is a simple current mode DC/DC converter ideally suited for 9V to 5V, 5V to 3.3V or 5V to – 5V


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    PDF LTC1174 LTC1174-3 3/LTC1174-5 LTC1174 9T1611 OT-23 150mA OT-23 LTC1701

    RS-25M

    Abstract: HER501 HER502 HER503 HER504 HER505 HER506 HER507 HER508 HER801
    Text: HIGH EFFICIENCY RECTIFIERS r lj it il 4 ^ — f a PLASTIC MATERIAL U SE D C AR R IES UL 94V-0 O PER A TIN G AND STO RA GE TE M P E R A TU R E -65 °C to +150 °C M axim um Peak Reverse Voltage TYPE M axim um Average Rectified Current @ Half-W ave Resistive Load


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    PDF HER501 HER502 HER503 HER504 HER505 HER506 DO-41 DO-15 DO-201AD DO-201 RS-25M HER507 HER508 HER801

    Untitled

    Abstract: No abstract text available
    Text: OMDIOO OMD400 OMD200 GMD500 FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE 100V Thru 500V. Up To 25 Amp, N-C ha nn el M O S F E T In Her me tic Metal Package FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low R qs on Available Screened To MIL-S-19500, TX, TXV and S Levels


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    PDF OMD400 OMD200 GMD500 MIL-S-19500, OMD20

    MIL-D-87157

    Abstract: MSD2010 MSD2011 MSD2012 MIL-STD-750 2072 Appnote44 MIL-STD-883-method 2016
    Text: SIEMENS AKTIENGESELLSCHAF S IE M E N S 47E D fl23SbGS D02b'ltlfl 3 SIEG MSD2010TXV/TXVB YELLOW MSD2011TXV/TXVB h ig h e ff . r e d MSD2012TXV/TXVB HIGH EFF. GREEN MSD2013TXV/TXVB red .150" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display


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    PDF AE3Sb05 MSD2010TXV/TXVBT" MSD2011TXV/TXVB MSD2012TXV/TXVB MSD2013TXV/TXVB fiE35b05 GD27QQÃ -4I-37 -335mA 410mA MIL-D-87157 MSD2010 MSD2011 MSD2012 MIL-STD-750 2072 Appnote44 MIL-STD-883-method 2016

    MPC 2120

    Abstract: No abstract text available
    Text: SIEMENS AKTIENGESELLSCHAF 47E D S IE M E N S re d YELLOW h igh EFF. RED HIGH EFF. GREEN fl23SbGS OOSb^^a 3 • SIEG MSD201OTXV/TXVB Hsa MSD2011TXV/TXVB MSD2012TXV/TXVB MSD2013TXV/TXVB .150" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display


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    PDF fl23SbGS MSD201OTXV/TXVB MSD2011TXV/TXVB MSD2012TXV/TXVB MSD2013TXV/TXVB MSD201X MSD2010 MSD2013TXV MPC 2120

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS OPTO ' 44E D • 0S3b3Eb 00Ü4Û13 Q Ö1SIEX MSD2010TXV/TXVB YELLOW MSD2011TXV/TXVB high e f f . r e d MSD2012TXV/TXVB HIGH EFF. GREEN MSD2013TXV/TXVB re d .150" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display Package Dimensions in Inches mm


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    PDF MSD2010thnJ MSD2013TXV/TXVB

    a210k

    Abstract: Mikroelektronik Heft "Mikroelektronik" Heft information applikation mikroelektronik mikroelektronik Heft 12 A211D A209K VEB mikroelektronik mikroelektronik DDR IC A211D
    Text: INFORMATION APPLIKATIO N MIKROELEKTRONIK In fo r m a tio n - Applikation Die monolithisch integrierten N F-V erstärker A 210D A210K A211D Eigenschaften und ! Anwendung Mikroelektronik Heft 1 veb haîbîeîterwerk frankfurt/oder l e i t b e t r i e b im v e b k o m b i n a t m ik r o e le k t r o n ik


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    PDF A210K A211D Mikroelektronik Heft "Mikroelektronik" Heft information applikation mikroelektronik mikroelektronik Heft 12 A211D A209K VEB mikroelektronik mikroelektronik DDR IC A211D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTDF1N02HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TDF1N02HD Medium Power Surface Mount Products Motorola Preferred Device TM OS Dual N-Channel Field E ffect Transistor Micro8™ devices are an advanced series of power MOSFETs


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    PDF MTDF1N02HD/D TDF1N02HD

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M MQA/D SEMICONDUCTOR TECHNICAL DATA MMQA Series SC-59 Quad Monolithic Common Anode Motorola Preferred Devices Transient Voltage Suppressor for ESD Protection SC-59 QUAD TRANSIENT VOLTAGE SUPPRESSOR 24 WATTS PEAK POWER 5.6 - 33 VOLTS


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    PDF SC-59 318F-01

    40n60 transistor

    Abstract: 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60
    Text: MbE D • Mb S b S E b OO O O S T M T «IXY I X V S CORP T □IX Y S I V I S Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features • • • Guaranteed Short Circuit Capability SCSOA Optimized for 60Hz to 30kHz Switching


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    PDF 1560A 30kHz IXSH20N60 IXSM20N60 Tj-125 40n60 transistor 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60

    Untitled

    Abstract: No abstract text available
    Text: / r u n « TECHNOLOGY LTC1174 _ LTC1174-3.3/LTC1174-5 H igh E ffic ie n c y S te p -D o w n a n d In v e rtin g D C /D C C o n v e rte r FCRTUR6S DCSCRIPTIOn • H ig h Effic ie n c y: U p to 9 4 % The L T C 1 1 7 4 is a simple current m ode DC /D C converter


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    PDF LTC1174 LTC1174-3 3/LTC1174-5 320mA 4VT012V CTX100-4 TAJD226K020

    MSD2353

    Abstract: 0D570 mpc 21-37 MSD2353TXV DIODE 2141
    Text: SIEMENS AKT IEN GESELLSCHAF SIEMENS 4?E D ñP3ShDS 0GE70ED 1 ISIEG MSD2351TXV/TXVB high EFF. RED MSD2352TXV/TXVB HIGH EFF. GREEN MSD2353TXV/TXVB YELLOW Sunlight Viewable .200" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display Package Dimensions in Inches mm


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    PDF 0GE70ED MSD2351TXV/TXVB MSD2352TXV/TXVB MSD2353TXV/TXVB P4\-37 MSD235X MSD2351 MSD2353 0D570 mpc 21-37 MSD2353TXV DIODE 2141