DD400S65K1
Abstract: No abstract text available
Text: Technische Information / technical information DD400S65K1 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values ! " # " $% & ' * $% & ()* $% & ( )* " * ! # 6 17 5&' " +, & " 9 .( . (/ + 12 3 4 12,+8 5 & '
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DD400S65K1
DD400S65K1
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m4 diode
Abstract: diode M4 peak m4 three phase bridge inverter RM20TPM-H diode bridge
Text: RM20TPM-H Tentative Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Three-Phase Diode Bridge Modules 40 Amperes/800 Volts A D J L P - DIA. (2 TYP.) G Q - M4 THD. (5 TYP.) K C M H H B N E F RM20TPM-H Three-Phase Diode Bridge Modules
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RM20TPM-H
Amperes/800
RM20TPM-H
m4 diode
diode M4
peak m4
three phase bridge inverter
diode bridge
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Untitled
Abstract: No abstract text available
Text: RM20TPM-H Tentative Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Three-Phase Diode Bridge Modules 40 Amperes/800 Volts A D J L P - DIA. (2 TYP.) G Q - M4 THD. (5 TYP.) K C M H H B N E F RM20TPM-H Three-Phase Diode Bridge Modules
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RM20TPM-H
Amperes/800
RM20TPM-H
Featur20TPM-H
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DD600S65K1
Abstract: No abstract text available
Text: Technische Information / technical information DD600S65K1 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values ! " # " $% & ' * $% & ()* $% & ( )* " * ! # 5 16 4&' " +, & " 8 +7 4 & ' 7 $% & ' ()*
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DD600S65K1
DD600S65K1
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH02G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDH02G65C5
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IDH03G65C5
Abstract: D0365C5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH03G65C5 Final Datasheet Rev. 2.1 <2012-09-10> Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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IDH03G65C5
650Ves
IDH03G65C5
D0365C5
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Infineon power diffusion process
Abstract: IDH09G65C5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH09G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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IDH09G65C5
Infineon power diffusion process
IDH09G65C5
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH03G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDH03G65C5
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW10G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW10G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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IDW10G65C5
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D0865C5
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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IDH08G65C5
D0865C5
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D0565C5
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH05G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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IDH05G65C5
D0565C5
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D3065C5
Abstract: IDW30G65C5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW30G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW30G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for
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IDW30G65C5
D3065C5
IDW30G65C5
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D1665C5
Abstract: Infineon power diffusion process idh16g65c5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH16G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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IDH16G65C5
D1665C5
Infineon power diffusion process
idh16g65c5
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D1665C5
Abstract: IDW16G65C5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW16G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW16G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for
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IDW16G65C5
D1665C5
IDW16G65C5
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IDH04G65C5
Abstract: D0465C5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH04G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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IDH04G65C5
IDH04G65C5
D0465C5
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D1065C5
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW10G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW10G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for
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IDW10G65C5
D1065C5
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH03G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDH03G65C5
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74LS115
Abstract: 74LS273 74LS189 equivalent 74LS00 QUAD 2-INPUT NAND GATE 74LS265 fan-in and fan out of 7486 74LS93A 74LS181 74LS247 replacement MR 31 relay
Text: F A IR C H IL D LOW POWER S C H O T T K Y D A TA BOOK ERRATA SHEET 1977 Device Page Item Schematic 2-5 Figure 2-6. Blocking diode in upper right is reversed. Also, diode con necting first darlington emitter to output should have series resistor. LS33 5-25
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1SZ51
Abstract: 1SZ50 1SZ53 1sz52 nec zener diode
Text: NEC REFEREN CE D IO D E ELECTRON DEVICE 1S Z 5 0 — 1SZ53 N E C T ype 1 S Z 5 0 ~ 1 S Z 5 3 are D H D Double Heatsink Diode construction O U T L IN E D R A W IN G planar type high stability refference diodes. FEATURES (U n it : mm ) • D H D (Double Heatsink Diode) Construction
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1SZ53
1SZ50
1SZ51
1SZ52
1SZ50
1SZ51
1SZ53
1sz52
nec zener diode
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Untitled
Abstract: No abstract text available
Text: yiyu 5 /ayh'+ - JKUT S W - h 5 Schottky Barrier Diode Twin Diode • W I2 \ fi£ II] OUTLINE DIMENSIONS D25SC6M 60V 25A •Tjl50°C • P rrsm77 ^ m •S R S S % D C /D C n y j K — 2 •m m , t f - h s • I f > oAggg 7 ti- ^ w * g g RATINGS Tc = 25°C
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D25SC6M
Tjl50
rrsm77
J515-5
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Untitled
Abstract: No abstract text available
Text: Ö U AL IT Y T E C H N O L O G I E S CORP 57E » 74bbñ51 0 0 0 H im 3Tb •■ 3TY Optolsolator Specifications _ H 11A520, H 11A550, H 11A 5100 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Phototransistor T h e H 1 1 A 5 2 0 , H 1 1 A 5 5 0 a n d H 1 1 A 5 1 0 0 co n s is t o f a g a lliu m
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11A520,
11A550,
7Mbbfi51
H11A520,
H11A550,
H11A5100
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Untitled
Abstract: No abstract text available
Text: b2E D • b427S2S G03747S «ÎT2 «NECE / N E C ELECTRONICS INC LIG HT EM ITTIN G DIODE / N D L 4 10 5 L 1 8 5 0 nm OPTICAL FIBER COMMUNICATIONS AIGaAs LIGHT EMITTING DIODE DE SC R IPTIO N N D L410 5L1 is an AIGaAs double heterostructure lig h t e m ittin g diode, especially designed fo r a lig h t source fo r optic a l fib e r
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427S2S
G03747
GI-50
GI-50
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SLD201V
Abstract: sld201 SLD201U TO50 package noise diode
Text: SLD201U/V SONY. 20mW High Power Laser Diode Description Package O utline SLD201 U /V is a gain-g u id ed h ig h -p o w e r laser diode fabricated by MOCVD. SLD201U U n it: mm trinci 51 OC Features . Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs d ouble-hetero laser diode.
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SLD201
SLD201U
SLD201V
720kHz
30kHz
SLD201U/V
SLD201V
SLD201U
TO50 package
noise diode
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Untitled
Abstract: No abstract text available
Text: 5 /a y h '+ - yiy u JKUT S W -h 5 Schottky Barrier Diode Twin Diode • W I 2 \ f i£ I I ] OUTLINE DIMENSIONS D20SC9M 90V 20A •T jl5 0 ° C • P rrsm 7 7 ^ m •S R S S %DC/DC n y j K — 2 • m m , t f - h s oAggg • I f > 7 ti-^ w *gg RATINGS T c = 25°C
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D20SC9M
J515-5
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