v5b1
Abstract: marking v6 22 diode
Text: ICX432DQ Diagonal 6.67mm Type 1/2.7 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX432DQ is a diagonal 6.67mm (Type 1/2.7) interline CCD solid-state image sensor with a square pixel array and 3.24M effective pixels. Adoption of a
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ICX432DQ
ICX432DQ
AS-C14
v5b1
marking v6 22 diode
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310T3
Abstract: mur120 AND8057 MMT05B230 MMT05B230T3 MMT05B260T3 MMT05B310T3 MMT10B230 MMT10B230T3 MMT10B260T3
Text: AND8057 Options for Lowering the Capacitance in TSPD Devices Prepared by: Alfredo Ochoa, Alex Lara, and Gabriel Gonzalez BPD Applications Engineers http://onsemi.com APPLICATION NOTE INTRODUCTION always be present, and it will depend on the structure and die size of each semiconductor device. Therefore, the main
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AND8057
r14525
AND8057/D
310T3
mur120
AND8057
MMT05B230
MMT05B230T3
MMT05B260T3
MMT05B310T3
MMT10B230
MMT10B230T3
MMT10B260T3
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diode 47-6 H1
Abstract: icx432 CM500S CXD3400N ICX432DQF 749H Transistor GR 1815
Text: ICX432DQF Diagonal 6.67mm Type 1/2.7 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX432DQF is a diagonal 6.67mm (Type 1/2.7) interline CCD solid-state image sensor with a square pixel array and 3.24M effective pixels. Adoption of a
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ICX432DQF
ICX432DQF
400mil)
diode 47-6 H1
icx432
CM500S
CXD3400N
749H
Transistor GR 1815
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749H
Abstract: CM500S CXD3400N ICX432DQ 18pin ccd
Text: ICX432DQ Diagonal 6.67mm Type 1/2.7 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX432DQ is a diagonal 6.67mm (Type 1/2.7) interline CCD solid-state image sensor with a square pixel array and 3.24M effective pixels. Adoption of a
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ICX432DQ
ICX432DQ
400mil)
749H
CM500S
CXD3400N
18pin ccd
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Diode gr 516
Abstract: 749H 1708f 2760fH
Text: ICX432DQF Diagonal 6.67mm Type 1/2.7 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX432DQF is a diagonal 6.67mm (Type 1/2.7) interline CCD solid-state image sensor with a square pixel array and 3.24M effective pixels. Adoption of a
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ICX432DQF
ICX432DQF
AS-C15
Diode gr 516
749H
1708f
2760fH
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2SA572
Abstract: k-952 TRANSISTOR DATASHEET SA572 Bucket Brigade NE5234 SA572D SA572DR2 diode zener 1 amp bucket brigade devices
Text: SA572 Product Preview Programmable Analog Compandor The SA572 is a dual-channel, high-performance gain control circuit in which either channel may be used for dynamic range compression or expansion. Each channel has a full-wave rectifier to detect the average value of input signal, a linearized, temperaturecompensated variable gain cell DG and a dynamic time constant
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SA572
SA572
SA572/D
2SA572
k-952 TRANSISTOR DATASHEET
Bucket Brigade
NE5234
SA572D
SA572DR2
diode zener 1 amp
bucket brigade devices
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NCP1380
Abstract: marking n52 JESD22 JESD78 R110 part marking leb marking N52 mosfet
Text: NCP1380 Quasi-Resonant Current-Mode Controller for High-Power Universal Off-Line Supplies The NCP1380 hosts a high−performance circuitry aimed to powering quasi−resonant converters. Capitalizing on a proprietary valley−lockout system, the controller shifts gears and reduces the
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NCP1380
NCP1380
NCP1380/D
marking n52
JESD22
JESD78
R110
part marking leb
marking N52 mosfet
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Untitled
Abstract: No abstract text available
Text: NCP1380 Quasi-Resonant Current-Mode Controller for High-Power Universal Off-Line Supplies The NCP1380 hosts a high−performance circuitry aimed to powering quasi−resonant converters. Capitalizing on a proprietary valley−lockout system, the controller shifts gears and reduces the
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NCP1380
NCP1380
NCP1380/D
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NCP1380D
Abstract: NCP1380B
Text: NCP1380 Quasi-Resonant Current-Mode Controller for High-Power Universal Off-Line Supplies The NCP1380 hosts a high−performance circuitry aimed to powering quasi−resonant converters. Capitalizing on a proprietary valley−lockout system, the controller shifts gears and reduces the
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NCP1380
NCP1380
NCP1380/D
NCP1380D
NCP1380B
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SURGE ARRESTER spark gap
Abstract: 403C MMT05B230 MMT10B230 MOV surge protection circuit diagram industrial tube company GR-974-CORE
Text: AND8022/D TSPD Thyristor Surge Protective Devices Prepared by: Alfredo Ochoa, Alex Lara, and Gabriel Gonzalez Thyristor Applications Engineers http://onsemi.com APPLICATION NOTE INTRODUCTION AC line fluctuations has the obvious advantage of making them more rugged, thereby lowering your warranty costs.
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AND8022/D
r14525
SURGE ARRESTER spark gap
403C
MMT05B230
MMT10B230
MOV surge protection circuit diagram
industrial tube company
GR-974-CORE
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NCP1380
Abstract: zener diode marking ES code part marking leb NCP1380B
Text: NCP1380 Quasi-Resonant Current-Mode Controller for High-Power Universal Off-Line Supplies The NCP1380 hosts a high−performance circuitry aimed to powering quasi−resonant converters. Capitalizing on a proprietary valley−lockout system, the controller shifts gears and reduces the
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NCP1380
NCP1380/D
zener diode marking ES code
part marking leb
NCP1380B
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Quasi-resonant flyback transformer
Abstract: No abstract text available
Text: NCP1380 Quasi-Resonant Current-Mode Controller for High-Power Universal Off-Line Supplies The NCP1380 hosts a high−performance circuitry aimed to powering quasi−resonant converters. Capitalizing on a proprietary valley−lockout system, the controller shifts gears and reduces the
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NCP1380
NCP1380/D
Quasi-resonant flyback transformer
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fuse thyristor
Abstract: metal oxide varistor SURGE ARRESTER NP3100SA k45 diode symbol metal oxide varistor SURGE ARRESTER GDT application mdf 24 METAL OXIDE VARISTOR application note on AC ptc overvoltage protections application note gdt testing
Text: AND8022/D TSPD Thyristor Surge Protection Devices Telecom Circuit Protection Using ON Semiconductor Protection Devices http://onsemi.com APPLICATION NOTE Overview The ON Semiconductor NP series of circuit protectors are used in the secondary overvoltage protection block. Circuits
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AND8022/D
fuse thyristor
metal oxide varistor SURGE ARRESTER
NP3100SA
k45 diode
symbol metal oxide varistor SURGE ARRESTER
GDT application
mdf 24
METAL OXIDE VARISTOR application note on AC
ptc overvoltage protections application note
gdt testing
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NCP1380
Abstract: No abstract text available
Text: NCP1380 Quasi-Resonant Current-Mode Controller for High-Power Universal Off-Line Supplies The NCP1380 hosts a high−performance circuitry aimed to powering quasi−resonant converters. Capitalizing on a proprietary valley−lockout system, the controller shifts gears and reduces the
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transistor H1A
Abstract: h1a transistor transistor H1A H2A sony CCD ICX452AQ ICX452AQ H1A marking TO-78 package
Text: ICX452AQ Diagonal 9.04mm Type 1/1.8 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX452AQ is a diagonal 9.04mm (Type 1/1.8) interline CCD solid-state image sensor with a square pixel array and 5.13M effective pixels. Adoption of a
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ICX452AQ
ICX452AQ
AS-B6-02
transistor H1A
h1a transistor
transistor H1A H2A
sony CCD ICX452AQ
H1A marking
TO-78 package
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transistor H1A
Abstract: transistor H1A H2A h1a transistor marking v6 78 diode icx452 H1A marking V6 69 diode package marking v5a ICX452AQF
Text: ICX452AQF Diagonal 9.04mm Type 1/1.8 Frame Readout CCD Image Sensor with a Square Pixel for Color Cameras Description The ICX452AQF is a diagonal 9.04mm (Type 1/1.8) interline CCD solid-state image sensor with a square pixel array and 5.13M effective pixels. Adoption of a
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ICX452AQF
ICX452AQF
AS-B7-03
transistor H1A
transistor H1A H2A
h1a transistor
marking v6 78 diode
icx452
H1A marking
V6 69 diode
package marking v5a
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TRANSISTOR D1960
Abstract: Eyal Microwave Industry OZ 9966 OZ 9938 dlva Radar Warning Receiver F9140AH fm MODULATOR 4046 SPA-X1-400 FR-2260-UK
Text: GENERAL MICROWAVE PRODUCT CATALOG Model Number Index .2 Product Index .5
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P31c transistor
Abstract: p31b diode DIODE P31B diode s4 do-214 DIODE P31A MOV surge protection circuit diagram P3100EB P06A diode Triac tip 216 triac zo 109 ma
Text: Data Book by TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: 972 580-7777 Fax: (972) 550-1309 Web site: http://www.teccor.com E-mail: sidactor@teccor.com An Invensys company Teccor Electronics is the proprietor of the trademarks SIDACtor , Battrax , and TeleLink™.
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UL497B
E133083.
E191008
P31c transistor
p31b diode
DIODE P31B
diode s4 do-214
DIODE P31A
MOV surge protection circuit diagram
P3100EB
P06A diode
Triac tip 216
triac zo 109 ma
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T2D 4N DIODE
Abstract: resistor HMR 5W diode code GW 17
Text: SAK-Series SAK-Series Appendix SAK-Series TS 35 A SAK-Series TS 32 B SAK-Series combination foot TS 35 + TS 32 C SAK-Series for special applications D AKZ-Series TS 15 E Multi-pole terminal strips F KLBÜ shielded connection G Busbars / Terminal rails H Accessories
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500 DKZ
Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren
Text: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt
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150/160-MHz-Band
500 DKZ
TFK 4 314
valvo
TELEFUNKEN* U 111 B
str w 6052
tfk 1007
tfk 014
Schwingquarz Telefunken
TFK S 417 T
valvo transistoren
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buz 90 af
Abstract: No abstract text available
Text: fiflD » • 88D ê23SbQ5 0014604 3 ■ S I E Û _ 14804 D T “ 3 eì-/1 _ BUZ 83 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel » 800 V Draln-source voltage Its = 2,9 A Continuous drain current Jo Draln-source on-resistance ^DS on = 4,0 n Description
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23SbQ5
C67078-A1012-A2
resist88D
buz 90 af
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC 33E D 0S04.33Í- GODSS43 I A L GR 1.25 A QUAD DARLINGTON SWITCHES —MIL-STD-883 COMPLIANT LTLS2064H - ULS2067H Intended for military, aerospace, and related applications, ULS2064H through ULS2077H quad Darlington switches interface
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GODSS43
MIL-STD-883
LTLS2064H
ULS2067H
ULS2064H
ULS2077H
ULS2064/65/68/69/74/75H
ULS2066/67/70/71/76/77H
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A1012
Abstract: C67078-A1012-A2
Text: fifi» D • ê 2 3 S b Q5 00 1 4 6 0 4 1 ■ S I E Û 88D 14804 D T - 3*1 -1 [ _ BUZ 83 SIEMENS A K TI EN GE SE LL SCH AF Main ratings N-Channel » 800 V Draln-source voltage Its = 2,9 A Continuous drain current Jo Draln-source on-resistance ^DS on a 4,0 a
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23SbQS
C67078-A1012-A2
A1012
C67078-A1012-A2
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Untitled
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL Data sheet status Preliminary specification date of issue March 1991 SbE ]> • 7 1 1 0 fl5 b O O M 4 S 7 T 137 « P H I N BUK471-60A/B PowerMOS transistor Replaces BUK441-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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7110f
BUK471-60A/B
BUK441-60A/B
BUK471
T-39-09
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