transistor 6c9
Abstract: transistor marking 6c9 102 6f dk transistor 6H MARKING diode D9 DG transistor marking 6H
Text: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U DK: GH;><IF: D;B : F>H/ , + L . X U 2 AHF6 ADK <6H : 8 =6F<: V !0 8M[^Rh .) O R =L"`_#%^Rh )',.) " *2 _< Q X%dia U " LHF : B : 9J 9HF6H: 9 U % ><= E: 6@8 IFF: CH8 6E67>A >HM U - 7 ;F: : A
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IPI50R350CP
696EH
transistor 6c9
transistor marking 6c9
102 6f
dk transistor
6H MARKING diode
D9 DG transistor
marking 6H
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Untitled
Abstract: No abstract text available
Text: SKD 30 <L[YC <LLY <<LY[ $M V F; ¥ TI- V ]^ _NX N, Z L,/2 < H; c; ^; 9H; 9c; < I?8*% [aM F;b;H¥9 [aM F;b;c¥9 [aM F;b;^¥9 [aM F;b9H¥9 [aM F;b9c¥9 QR ` ;C9G ;CF ;CG ;CdG ;C] 9:; Symbol $M Power Bridge Rectifiers $MNA [aM F;b9:¥9 Conditions I( V cG _NC /%&'( *+9X
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2N6796
Abstract: 2N6795 2N6195 2N679B 2N6196 LE17 diode 60V 8A
Text: 37E » SEMELAB LTD I 0133107 □□□□313 1 T-39-09 JAN 0 5 1988 SEM ELAB 2N 6795 2N 6796 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES P IN 1 -S o u rc e P IN 2 -G a te
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D0DD313
2N6795
2N6796
2N6795
2N6796
Tc-25
2N6195
2N679B
2N6196
LE17
diode 60V 8A
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Untitled
Abstract: No abstract text available
Text: SKM 300GB126D $ * GH I2> :'/&44 .- &%564& 47&(6;6&B Absolute Maximum Ratings Symbol Conditions IGBT 123F $J * GH I2 A2 $J * LHM I2 LGMM 1 NLM C $(,4& * OM I2 GMM C RMM C T GM 1 LM X4 $(,4& * GH I2 GHM C $(,4& * OM I2 LZM C RMM C HMM C $8J ] RM ^^^ _ LHM I2
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300GB126D
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P-Channel Depletion Mode FET
Abstract: P-Channel Depletion-Mode FET E202 2N3631 2N3823 Junction FETs JFETs 2N2606 2N3329 E202 P-Channel Depletion Mosfets
Text: AN73-7 s S ilic o n ix APPLICATION NOTE An Introduction to FETs INTRODUCTION In fact, FET technology today allows a greater packaging density in large-scale integrated circuits LSI than would ever be possible w ith bipolar devices. The basic principle o f the field-effect transistor (F E T ) has
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HX 711
Abstract: No abstract text available
Text: SKB 30 <LIYC <LLY <<LYI $M V F; [ T¥- V ]^ _NX N, Z L,/2 < H; ^; c; 9H; 9^; < ¥?8*% Ia3 F;b;H[9 Ia3 F;b;^[9 Ia3 F;b;c[9 Ia3 F;b9H[9 Ia3 F;b9^[9 QR ` ;C9G ;CF ;CG ;CdG ;C] 9:; Symbol $M Power Bridge Rectifiers $MNA Ia3 F;b9:[9 Conditions ¥( V ^G _NC /%&'( *+9X
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1001 dl pwm
Abstract: Marcon capacitor Co manual Bst Tiny 20 .05resistor
Text: 19-1321; Rev 0; 1/98 A i> ix iy k i -6V* l u ^ o n k " AVMLABÎi; Miniature, Low-Voltage, Precision Step-Down Controller Features The MAX1637 synchronous, buck, switch-mode powersupply controller generates the CPU supply voltage in battery-powered systems. The MAX1637 is a strippeddown version of the MAX1636 in a smaller 16-pin QSOP
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350kHz
16-Pin
MAX1637
1001 dl pwm
Marcon capacitor Co
manual Bst Tiny 20
.05resistor
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MF0D71
Abstract: MFOD71 MFOD71 motorola MFOD71 circuit 2N4401 ITT MFOE76 MFOD75 fiber optical photo detector MC3302 MOTOROLA FIBER OPTIC
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M FO D71 Fiber O p tic s — FLCS F am ily P h o to D e te c to r Diode Output FLCS FAMILY FIBER OPTICS PHOTO DETECTOR DIODE O U TPU T . . . designed fo r low cost, short distance Fiber Optic Systems using 1000 micron core
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MFOE76
363B-01
MF0D71
MFOD71
MFOD71 motorola
MFOD71 circuit
2N4401 ITT
MFOD75
fiber optical photo detector
MC3302
MOTOROLA FIBER OPTIC
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74HC245AP/AF/AFW TC74HC640AP/AF Octal Bus Transceiver TC74HC245 3-State, Non-Inverting TC74HC640 3-State, Inverting The TC74HC245A, and 640A are high speed CMOS OCTAL BUS TRANSCEIVERS fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent
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TC74HC245AP/AF/AFW
TC74HC640AP/AF
TC74HC245
TC74HC640
TC74HC245A,
TC74HC245A
TC74HC640A
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IN4462
Abstract: 1N4434 1N4504 1N4475 1N4465 i23l 1N4427 1N4474 1N4499 1N4504 3A diode
Text: Zener Voltage 3 t Izr @ mA Zener Type No. Volts 1N4418 1N4419 1N4420 39.0 43.0 47.0 1N4421 1N4422 1N4423 1N4424 1N4425 1N4426 51.0 56.0 62.0 Max. Zener Impedance @ Izt Ohms 21.0 23.0 26.0 30.0 33.0 40.0 68.0 75.0 82.0 6.5 6.0 5.5 5.0 4.5 4.0 3.7 3.3 3.0 1N4427
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1N4418
1N4419
1N4420
1N4421
1N4422
1N4423
1N4424
1N4425
1N4426
1N4427
IN4462
1N4434
1N4504
1N4475
1N4465
i23l
1N4474
1N4499
1N4504 3A diode
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2sk1058 equivalent
Abstract: 2SK1058 cross reference diode gs1j 2sc1343 2sk186 2SK2265 2SK317 2SJ68 2SK151 2sc1343 hitachi
Text: Section 5 A bsolute M axim um R atings and Electrical Characteristics 5.1 Absolute Maximum Ratings and Electrical Characteristics 5.1.1 Absolute Maximum Ratings The following absolute maximum rating items are stipulated independently of each other: Sustained drainsource voltage V DSS
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Untitled
Abstract: No abstract text available
Text: IPI50R350CP CoolMOSTM Power Transistor Product Summary Features U DK:GH;><IF:D;B:F>H/,+L.X U2AHF6ADK<6H:8=6F<: V !08M[^Rh .) O R =L"`_#%^Rh )',.) *2 _< Q X%dia U"LHF:B:9J 9HF6H:9 U%><=E:6@8IFF:CH86E67>A>HM
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IPI50R350CP
86E67
688DF9
696EH
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1n3020 zener diode
Abstract: 1N3206 in3155 1N2980 1N2981 1N2982 1N2983 1N2985 1N2986 1N2987
Text: Zener Type No. Zener Voltage at 1ZT Volts @ mA Max. Zener Impedance @ lZT Ohms 3.0 4.0 " 1N2979 1N2980 1N2981 1N2982 1N2983 2N2984 1N2985 1N2986 1N2987 1N2988 1N2989 1N2990 1N2991 1N2992 1N2993 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 25.0 27.0 30.0 33.0 36.0
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IN2979
1N2980
1N2981
1N2982
1N2983
IN2984
1N2985
1N2986
1N2987
1N2988
1n3020 zener diode
1N3206
in3155
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1N3106
Abstract: in3155 1N3206 1N3098 1N3105 1N3199 1N31 1N3112 1N3155 1N318
Text: Zener Type No. 1N3049 1N3050 1N3051 Zener Vo tate al: li Volts @ mA 1.6 1.4 1.2 160.0 180.0 200.0 Max. Zener Impedance @ Izr Ohms Zener Voltage Tolerance 1100.0 1200.0 1500.0 No Suffix = 2 0 % Suffix A = 1 0 % Suffix B = 5 % Power Rating Device Package MICROSEMI
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1n3049
1n3050
1n3051
DO-13
1N3098-1N3101,
2-1N3105,
1N3106-1N3109
1N3112
N3017
1N3148W
1N3106
in3155
1N3206
1N3098
1N3105
1N3199
1N31
1N3155
1N318
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Diode DII
Abstract: 2SK299 2SK1518 equivalent 2SJ68 2SK1058 2sk135 application note 2SK1058 cross reference 2SK2265
Text: Section 5 Absolute Maximum Ratings and Electrical Characteristics 5.1 Absolute Maximum Ratings and Electrical Characteristics 5.1.1 Absolute M aximum Ratings The following absolute maximum rating items are stipulated independently of each other: Sustained drainsource voltage V DSS
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1N310
Abstract: ZENER DIODE 18 volt 5 watt Zener diode h5c 1N2621 IN333 1N2620 1N2623 1N936 1N937 1N2865-1N2
Text: lo i£>r-«. 00 T> fnrnro ro ro z&><zf>zo CD 01 m ai IX i£>kO cm O O O O C CO ^ ^ ^ ^ ^ Z Z O' ' Q I I I ! o o o o0*0o S'U) ÇVJ -< o HUO h E «> c oooo d o d o VO 00 O CM \0 sO 0 s o' ) LO lf) i n in I +1 +1 +1 +1 ) PO 00 co co >ci oì ci cri cg CM CM
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1N2620
1N2621
1N2622W
DO-13
1N9351
1N936
1N937â
1N2623â
1N2624<
1N9381
1N310
ZENER DIODE 18 volt 5 watt
Zener diode h5c
IN333
1N2623
1N937
1N2865-1N2
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Burr-Brown Application Note AN-165
Abstract: 1N414S ppmc101 pfr 852 diode BB REF200 350JLA PPMC-101 PWS740 Lm324 window comparator REF200
Text: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N « REF200 DUAL CURRENT SOURCE/CURRENT SINK FEATURES APPLICATIONS • COMPLETELY FLOATING: No Power Supply or Ground Connections • HIGH ACCURACY: 100|^A ±0.5% • LOW TEMPERATURE COEFFICIENT:
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REF200
25ppm/Â
REF200
100pA
R-75kii)
100pF
1N4148
VLMT-100nA-R)
50kii)
Burr-Brown Application Note AN-165
1N414S
ppmc101
pfr 852 diode
BB REF200
350JLA
PPMC-101
PWS740
Lm324 window comparator
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RQK0302GGDQA R07DS0305EJ0600 Rev.6.00 Jan 10, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS on = 92 mΩ typ (VGS = 10 V, ID = 1.3 A) • Low drive current • High speed switching • 4.5 V gate drive
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RQK0302GGDQA
R07DS0305EJ0600
PLSP0003ZB-A
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SN0608098-GP
Abstract: BQ24745RHDR-GP TPS51117PWR-GP nxp pr533 foose rs780M mec5035 c840 dell BCM5761 RS780
Text: 5 4 3 2 1 FOOSE UMA 14" Schematics Document D D AMD Giffin CPU S1G2 RS780M + SB700 C C 2008-01-04 REV : SB B B DY : Nopop Component 5761 : Use BCM5761E 5756 : Use BCM5756M B_TPM : Use LOM TPM C_TPM : Use China TPM <Variant Name> A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih,
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RS780M
SB700
BCM5761E
BCM5756M
FOOSE-14
ICS9LPRS474AKLFT
4X701
07235-SB
BQ24745RHDR-GP
SN0608098-GP
BQ24745RHDR-GP
TPS51117PWR-GP
nxp pr533
foose
rs780M
mec5035
c840 dell
BCM5761
RS780
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rold rotary switches RC Series
Abstract: MM74HC4016 National Semiconductor COP888BC Deutsch Relays E215 endless rotary potentiometer COP800 COP884BC COP888CG COP888EK E215
Text: COP8 Microcontroller COP888 Feature Family User’s Manual Literature Number 620897-003 September 1996 REVISION RECORD ii REVISION RELEASE DATE A 03/89 First Release COP888 User’s Manual NSC Publication Number 420411060-001A B 07/94 Reformatted and updated manual to include information on new devices added to the COP888 Feature
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COP888
20411060-001A
COP888EK
rold rotary switches RC Series
MM74HC4016 National Semiconductor
COP888BC
Deutsch Relays E215
endless rotary potentiometer
COP800
COP884BC
COP888CG
E215
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1N4838
Abstract: IN4462 1N4475 1N4465 1N4418 1N4504 1N4474 1N4477 1N4419 1N4420
Text: Zener Voltage 3 t Izr @ mA Zener Type No. Volts 1N4418 1N4419 1N4420 39.0 43.0 47.0 1N4421 1N4422 1N4423 1N4424 1N4425 1N4426 51.0 56.0 62.0 Max. Zener Impedance @ Izt Ohms 21.0 23.0 26.0 30.0 33.0 40.0 68.0 75.0 82.0 6.5 6.0 5.5 5.0 4.5 4.0 3.7 3.3 3.0 1N4427
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1N4418
1N4419
1N4420
1N4421
1N4422
1N4423
1N4424
1N4425
1N4426
1N4427
1N4838
IN4462
1N4475
1N4465
1N4504
1N4474
1N4477
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ZENER DIODE color bands
Abstract: 1N901 1N3206 1N31 1N3112 1N3155 1N318 1N32 glass "DO-7" diode color
Text: Zener Type No. 1N3049 1N3050 1N3051 Zener Vo tate al: li Volts @ mA 1.6 1.4 1.2 160.0 180.0 200.0 Max. Zener Impedance @ Izr Ohms Zener Voltage Tolerance 1100.0 1200.0 1500.0 No Suffix = 2 0 % Suffix A = 1 0 % Suffix B = 5 % Power Rating Device Package MICROSEMI
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1n3049
1n3050
1n3051
DO-13
1N3098-1N3101,
2-1N3105,
1N3106-1N3109
1N3112
N3017
1N3148W
ZENER DIODE color bands
1N901
1N3206
1N31
1N3155
1N318
1N32
glass "DO-7" diode color
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet HITK0302MP Silicon N Channel MOS FET Power Switching R07DS0483EJ0100 Rev.1.00 Jun 22, 2011 Features • Low on-resistance RDS on = 92 m typ (VGS = 10 V, ID = 1.3 A) Low drive current High speed switching 4.5 V gate drive
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HITK0302MP
R07DS0483EJ0100
PLSP0003ZB-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RQK0302GGDQA R07DS0305EJ0500 Previous: REJ03G1275-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 92 m typ (VGS = 10 V, ID = 1.3 A) Low drive current High speed switching
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RQK0302GGDQA
R07DS0305EJ0500
REJ03G1275-0400)
PLSP0003ZB-A
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