RG105
Abstract: ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E
Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability
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IRGP20B120UD-E
O-247AD
20KHz
RG105
ir igbt 1200V 10A
SS850
sa wf
IRGP20B120UD-E
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IRGP20B120UD-E
Abstract: IGBT Transistor 1200V, 25A
Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability
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IRGP20B120UD-E
O-247AD
20KHz
IRGP20B120UD-E
IGBT Transistor 1200V, 25A
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Untitled
Abstract: No abstract text available
Text: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C G G IC = 20A, TC =100°C TJ max = 150°C VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating Microwave ovens
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IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
IRG7PK35UD1PbFÂ
247ACÂ
IRG7PK35UD1â
247ADÂ
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Untitled
Abstract: No abstract text available
Text: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C C C IC = 20A, TC =100°C TJ max = 150°C G G VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating Microwave ovens
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IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
IRG7PK35UD1PbFÂ
247ACÂ
IRG7PK35UD1â
247ADÂ
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20NB60HD
Abstract: stgw20nb60hd 20NB60H
Text: STGW20NB60HD N-CHANNEL 20A - 600V - TO-247 PowerMESH IGBT T YPE V CES V CE sat IC STGW 20NB60HD 600 V < 2.8 V 20 A • ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY
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STGW20NB60HD
O-247
20NB60HD
20NB60HD
stgw20nb60hd
20NB60H
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20NB60HD
Abstract: STTA2006 STGW20NB60HD
Text: STGW20NB60HD N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT T YPE V CES V CE sat IC STGW 20NB60HD 600 V < 2.8 V 20 A • ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY
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STGW20NB60HD
O-247
20NB60HD
20NB60HD
STTA2006
STGW20NB60HD
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Diode 400V 20A
Abstract: No abstract text available
Text: AOK20B60D1 600V, 20A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt
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AOK20B60D1
O-247
1E-06
1E-05
Diode 400V 20A
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CM20AD05-12H
Abstract: cm20ad DIODE EVP 28
Text: MITSUBISHI IGBT MODULES ARY CM20AD05-12H MIN RELI . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE CM20AD05-12H ¡IC . 20A
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CM20AD05-12H
G-746"
CM20AD05-12H
cm20ad
DIODE EVP 28
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Untitled
Abstract: No abstract text available
Text: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C High Speed Switching Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A Built-in Fast Recovery Diode VCES 600V IC 20A C C G E E Absolute Maximum Ratings
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AP20GT60SW
-55tor-Emitter
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Untitled
Abstract: No abstract text available
Text: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C
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AP20GT60SW
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Untitled
Abstract: No abstract text available
Text: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage V CE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C
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AP20GT60SW
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FAST RECOVERY DIODE dual 20a 600 to247
Abstract: fgh20n60 smps 10w 12V igbt 400V 20A 400v 20A ultra fast recovery diode FGH20N60UFD FGH20N60UFDTU 12v igbt 20a igbt 600v 20a power Diode 400V 20A
Text: FGH20N60UFD 600V, 20A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
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FGH20N60UFD
FAST RECOVERY DIODE dual 20a 600 to247
fgh20n60
smps 10w 12V
igbt 400V 20A
400v 20A ultra fast recovery diode
FGH20N60UFD
FGH20N60UFDTU
12v igbt 20a
igbt 600v 20a
power Diode 400V 20A
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20GT60sw
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP20GT60SW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching Low Saturation Voltage Typical V CE sat = 1.8V at IC=20A VCES 600V IC 20A C (tab) G Built-in Fast Recovery Diode C C RoHS-compliant, halogen-free
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AP20GT60SW-HF-3
AP20GT60S
20GT60SW
20GT60sw
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP20GT60ASI-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching Low Saturation Voltage Typical V CE sat = 1.7V at IC=12A VCES 600V IC 20A Isolated tab G Industry-standard isolated package C C RoHS-compliant, halogen-free
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AP20GT60ASI-HF-3
O-220CFM
AP20GT60AS
20GT60ASI
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SGF40N60UFD
Abstract: No abstract text available
Text: SGF40N60UFD CO-PAK IGBT FEATURES * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (@ lc=20A) * High Input Impedance *CO-PAK; IGBT with FRD : Trr = 42nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls
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SGF40N60UFD
SGF40N60UFD
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igbt 200v 20a
Abstract: SGH20N60RUFD 20A igbt
Text: SGH20N60RUFD C O -P A K IG B T FE A TU R ES * Short Circuit rated 10jas @ TC=100°C * High Speed Switching * Low Saturation Voltage : V CE sat = 2.0 V @ lc=20A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 50ns (Typ) A P P LIC A TIO N S * * * * *
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SGH20N60RUFD
igbt 200v 20a
SGH20N60RUFD
20A igbt
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G20N50c
Abstract: 20N50C1D GE 639 1D50C "parallel diode" 20N50E 443 20N 20n50c
Text: i \M J H A R R I S semiconductor H G TH 20N 40C 1D , H G TH 20N 40E1D , H G TH 20N 50C 1D , H G TH 20N 50E 1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aphi 1995 Features Package • 20A, 400V and 500V • ^ C E O N JEDEC TO-218AC
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40E1D
O-218AC
HGTH20N40C1D,
HGTH20N40E1D,
HGTH20N50C1D,
HGTH20N50E1D
AN7254
AN7260)
G20N50c
20N50C1D
GE 639
1D50C
"parallel diode"
20N50E
443 20N
20n50c
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w20nb60hd
Abstract: No abstract text available
Text: STGW20NB60HD N-CHANNEL 20A - 600V - TO-247 PowerMESH IGBT TYPE VcES VcE sat lc S TG W 20NB60H D 600 V < 2.8 V 20 A . . . . . . . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (V cesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION
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STGW20NB60HD
O-247
20NB60H
O-247
120kHz)
w20nb60hd
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PJ 969 diode
Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode
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500ns
HGTG20N50C1D
O-247
AN7254
AN7260)
PJ 969 diode
G20N50c
20N50C1D
pj 986 diode
F25 transistor
mosfet 20n
GE 639
pj 809
IGBT 500V 35A
igbt 20A 500V
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siemens igbt BSM 25 gd
Abstract: siemens igbt BSM 10 siemens igbt BSM 100 ECONOPACK 2K IGBT Power Module siemens bsm
Text: SIEMENS BSM 20 GD 60 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate LU Type b Package Ordering Code BSM 20 GD 60 DN2 600V 20A ECONOPACK 2 C67076-A2511-A67 BSM 20 GD 60DN2E3224
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60DN2E3224
C67076-A2511-A67
C67070-A2511-A67
60DN2E3224
siemens igbt BSM 25 gd
siemens igbt BSM 10
siemens igbt BSM 100
ECONOPACK 2K
IGBT Power Module siemens bsm
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6MBI20LS060
Abstract: 40 t 1202 igbt 223371
Text: 6MBI20LS-060 20a IGBT MODULE ( L series) Fuji Power Module Outline Drawings • Features • High Speed Switching • Low Saturation Voltage • Compact Package • PCB Mounting Flexibility ■ A p plications • Inverter for M otor Drive • AC and DC Servo Drive A m plifier
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6MBI20LS-060
GD0213b
6MBI20LS060
40 t 1202 igbt
223371
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SGH40N60UFD
Abstract: igbt for induction heating
Text: SGH40N60UFD IGBT CO-PAK FEATURES TO-3P ^ * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=20A) * High Input Impedance * CO-PAK, IGBT with FRD :Trr = 42nS (Typ) \\ 1 APPLICATIONS AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls
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SGH40N60UFD
O-220-F-4L
DD3b33E
003b333
SGH40N60UFD
igbt for induction heating
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Untitled
Abstract: No abstract text available
Text: STGW20NB60HD N-CHANNEL 20A - 600V - TO-247 PowerMESH IGBT TYPE V ces VcE sat lc S TG W 20N B60H D 600 V < 2 .8 V 20 A . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) . LOW ON-VOLTAGE DROP (V c e s a t) . LOW GATE CHARGE . HIGH CURRENT CAPABILITY . VERY HIGH FREQUENCY OPERATION
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STGW20NB60HD
O-247
120kHz)
O-247
P025P
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igbt 45 f 122
Abstract: igbt 200v 20a 200v dc motor igbt
Text: SGH40N60UFD N-CHANNEL IGBT FEATURES TO-3P * High Speed Switching * Low Saturation Volatge : VCE sat = 2.0 V (@ lc=20A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 42nS (typ.) # APPLICATIONS 0 C * AC & DC Motor controls * General Purpose Inverters
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SGH40N60UFD
igbt 45 f 122
igbt 200v 20a
200v dc motor igbt
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