TC2004
Abstract: TC106 GC106 GC2005 GC107 TC307 TC2003 TC2005 MMBD1702 TC2006
Text: Surface Mount Switching Diodes Part No. TMPD6050 BAV70 BAV99 BAW56 BAV74 TMPD2835 MMBD1701 MMBD1702 MMBD1703 MMBD1704 MMBD1705 MMBD1701A MMBD1703A MMBD1704A MMBD1705A BB804 BB814 BB824 CrossReference Marking Code Max. Cont. Reverse Current Maximum Diode Capacitance
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TMPD6050
BAV70
BAV99
BAW56
BAV74
TMPD2835
MMBD1701
MMBD1702
MMBD1703
MMBD1704
TC2004
TC106
GC106
GC2005
GC107
TC307
TC2003
TC2005
MMBD1702
TC2006
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MAS9250C6UA06
Abstract: GC4 diode GC3 Coil MOSFET SAW MARKING CODE DO3314-103MXB 16 psk
Text: DA9250.003 11 November 2005 MAS9250 High Efficiency Synchronous Step-Down Switching Regulator • Efficiency up to 93% • Switching Frequency from 400 kHz to 2 MHz • No Schottky Diode Required • PWM, PFM and PSK Operations • Low Dropout Operation: 100% Duty Cycle
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DA9250
MAS9250
MAS9250
MAS9250C6UA06
GC4 diode
GC3 Coil
MOSFET SAW MARKING CODE
DO3314-103MXB
16 psk
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Untitled
Abstract: No abstract text available
Text: SKM 75GD123D Absolute Maximum Ratings Symbol Conditions IGBT *6 %* %*; <6 -> - SEMITRANSTM 3 Trench IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features
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75GD123D
75GD123DL
75GDL123D
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Untitled
Abstract: No abstract text available
Text: SKM 75GD123D Absolute Maximum Ratings Symbol Conditions IGBT *6 %* %*; <6 -> - SEMITRANSTM 3 Trench IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features
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75GD123D
75GD123DL
75GDL123D
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Untitled
Abstract: No abstract text available
Text: SKM 75GD123D Absolute Maximum Ratings Symbol Conditions IGBT *6 %* %*; <6 -> - SEMITRANSTM 3 Trench IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features
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75GD123D
75GD123DL
75GDL123D
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Untitled
Abstract: No abstract text available
Text: SKM 75GD123D Absolute Maximum Ratings Symbol Conditions IGBT *6 %* %*; <6 -> - SEMITRANSTM 3 Trench IGBT Modules SKM 75GD123DL SKM 75GD123D SKM 75GDL123D Features
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75GD123D
75GD123DL
75GD123D
75GDL123D
GC66G
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Untitled
Abstract: No abstract text available
Text: BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON WITH INTEGRATED ANTI PARALLEL COLLECTOR-EMITTER DIODE . HIGH VOLTAGE CAPABILITY . HIGH DC CURRENT GAIN . U.L. RECOGNISED ISOWATT218 PACKAGE
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BU808DFI
ISOWATT218
SOWATT218
P025C
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Untitled
Abstract: No abstract text available
Text: BULD118D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS:
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BULD118D-1
SC-0351
O-251
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Untitled
Abstract: No abstract text available
Text: BU208D BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS • STMicraelectronics PREFERRED SALESTYPES . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED ISOWATT218 PACKAGE U.L. FILE# E817 3 4 (N . JEDECTO-3 METAL CASE . NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE
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BU208D
BU508DFI
ISOWATT218
BU208D
BU508DFI
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MUD 112
Abstract: No abstract text available
Text: SGS-THOMSON M JD 112 MÜD117 1EL0 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . LOW BASE-DRIVE REQUIREMENTS . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL
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O-252
TIP112
TIP117
MJD112
MJD117
MJD112/MJD117
GC6357G
MUD 112
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MJDI12
Abstract: No abstract text available
Text: MJDI12 MJD117 SGS-THOMSON ¡Li @H gI COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . LOW BASE-DRIVE REQUIREMENTS . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . SURFACE-MOUNTING TO-252 (DPAK POWER PACKAGE IN TAPE & REEL
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MJDI12
MJD117
O-252
TIP112
TIP117
MJD112
MJD117
200ft
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57RA
Abstract: No abstract text available
Text: s = 7 S G S -T H O M S O N ^ 7# K l g K L iM ( s iO ( g S B U LT118D HIGH VOLTAGE FAST-SWITCHING _ NPN POWER TRANSISTOR PRELIMINARY DATA . . . . . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS
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LT118D
57RA
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N RfflD0lsi i[Liera®[i!lDS$ B U L T 1 18D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . NPN TRANSISTOR . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR
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SC-0351
BULT118D
OT-32
O-126)
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Untitled
Abstract: No abstract text available
Text: s = 7 S G S - T H O M S O N ^ 7# K l g K L iM ( s iO ( g S B U L D 1 1 8 D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR
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Untitled
Abstract: No abstract text available
Text: IRFP460 N - CHANNEL 500V - 0.22 Q - 20 A - TO-247 PowerMESH MOSFET TYPE V dss IRFP460 500 V Id R D S o n < 0.27 a 20 A Q. • TYPICAL RDS(on) = 0.22 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED
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IRFP460
O-247
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON [M O ig œ ilL ie ra *® STP 38 N 06 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V dss R d S oii Id STP38N06 60 V < 0.03 Q. 38 A (*) . TYPICAL RDs(on) = 0.026 £1 . AVALANCHE RUGGED TECHNOLOGY
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STP38N06
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STP8N10
Abstract: transistor BC 945
Text: fZ 7 ^ 7# S C S -T H O M S O N M e ^ lIL llC T M m iC i S T P 8 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP8N10 • . . . . . . . V dss R dS oii Id 100 V < 0.45 Q 8 A TYPICAL R ds(oii) = 0.4 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STP8N10
STP8N10
10CfC
O-220
0073M01
O-220
D0734Q2
transistor BC 945
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Untitled
Abstract: No abstract text available
Text: S GS-THOMSON sgaMiLaCTtæratgs STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE I STP4NA80 STP4NA80FI • . ■ ■ . . . V dss R DS on Id 800 V 800 V <30 < 3 n A 2.5 A 4 TYPICAL Ros(on) = 2.4 Q ±30V GATE TO SOURCE VOLTAGE RATING
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STP4NA80
STP4NA80FI
STF4NA80/FI
00b2D50
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Untitled
Abstract: No abstract text available
Text: BUZ80A N - CHANNEL 800V - 2.5CI - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A • . . . . . . V dss RdS oii Id 800 V < 3 Q. 3.8 A TYPICAL RDS(on) = 2.5 £1 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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BUZ80A
O-220
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Untitled
Abstract: No abstract text available
Text: SGSTHOMSON STD 9N 1o ULieraOôKêi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD9N10 V dss RDS on Id 100 V < 0.27 a 9A • . . . . . . ■ TYPICAL FtDS(on) = 0.23 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCH E TESTE D REPETITIVE AVALANCHE DATA AT 100°C
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STD9N10
O-251)
O-252)
O-251
O-252
0068772-B
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON 3 [M O ig œ ilL ie ra *® STK NA 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E STK3NA60 • . . . . . . V dss 600 V R dS oii < 4 a. Id 2.7 A TYPICAL RüS(on) = 3 .3 Cl ± 30V GATE TO SOURCE VOLTAGE RATING
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STK3NA60
OT-82
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3l4 diode
Abstract: No abstract text available
Text: r Z ^ 7 Z S G S - T H O M S O N # M G IF ä < m [i< m @ R !]D S S T D 3 N 2 5 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V d ss R d S o ii 250 V STD3N25 Id <2 0. 3 A • . . . . TYPICAL R ds(oii) = 1 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STD3N25
O-251)
O-252)
O-251
O-252
0068772-B
3l4 diode
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STP10N10
Abstract: 0A95 73H2
Text: SGS-THOMSON ¿5 7 S T P IO N IO L S T P 10N 1OLFI ÍUI OT ül@Í N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP10N10L STP10N10LFI • . . . . . . . . Voss R D S (o n Id 100 V 100 V < 0.33 Q < 0.33 Q 10 A 7A TYPICAL RDS(on) = 0.26 Q
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STP10N10L
STP10N10LFI
7T2T237
STP10N1
ISOWATT220
7RS153?
STP10N10
0A95
73H2
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Untitled
Abstract: No abstract text available
Text: STP9NA50 STP9NA50FI SGS-THOMSON HLlCTIàìO« N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP9N A 50 STP9N A 50FI Voss RoS on lo I 500 V 500 V < 0.8 Ç1 < 0.8 Q. 8.8 A 5 A j j . TYPICAL RDS(on) = 0.7 Q . ± 30V GATE TO SOURCE VOLTAGE RATING
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STP9NA50
STP9NA50FI
STP9NA50/FI
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