diode number
Abstract: H07V-U terminal of diode
Text: Product catalogue | Functional Electronics | Interface elements | Diode Array | with open diode connections General ordering data Order No. Part designation Version EAN Qty. 8022901001 RSD 10 LP5/10/90 5.08 Diode gate, PCB terminal LP 5.08, Number of signals: 10
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H07V-U)
LP5/10/90
EC001419
diode number
H07V-U
terminal of diode
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C-150
Abstract: IRFI840G IRGIB6B60KD PD944
Text: PD-94427C IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94427C
IRGIB6B60KD
O-220
IRFI840G
O-220
C-150
IRFI840G
IRGIB6B60KD
PD944
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Untitled
Abstract: No abstract text available
Text: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-95321
IRGIB6B60KDPbF
O-220
O-220
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Untitled
Abstract: No abstract text available
Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGPS40B120UDP
Super-247
Super-247â
IRFPS37N50A
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C-150
Abstract: IRGIB6B60KD
Text: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94427D
IRGIB6B60KD
O-220
O-220
C-150
IRGIB6B60KD
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transistor c 2335
Abstract: C-150 IRFI840G IRGIB15B60KD1
Text: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB15B60KD1
O-220
IRFI840G
O-220
transistor c 2335
C-150
IRFI840G
IRGIB15B60KD1
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Untitled
Abstract: No abstract text available
Text: PD - 94385A IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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4385A
IRGB5B120KD
O-220
O-220AB
IRF1010
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Untitled
Abstract: No abstract text available
Text: PD- 94914 IRGIB15B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB15B60KD1PbF
O-220
O-220
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Untitled
Abstract: No abstract text available
Text: PD-94427A IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94427A
IRGIB6B60KD
O-220
IRFI840G
O-220
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C-150
Abstract: IRGIB10B60KD1P
Text: PD - 94913 IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB10B60KD1P
O-220
O-220
C-150
IRGIB10B60KD1P
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IRGIB15B60KD1P
Abstract: C-150
Text: PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB15B60KD1P
O-220
O-220
IRGIB15B60KD1P
C-150
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transistor BR 9013
Abstract: C-150 IRFI840G IRGIB15B60KD1 transistor c 2335
Text: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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4599A
IRGIB15B60KD1
O-220
IRFI840G
O-220
transistor BR 9013
C-150
IRFI840G
IRGIB15B60KD1
transistor c 2335
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AN-994
Abstract: C-150 EIA-541 IRFR120
Text: PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGR3B60KD2PbF
Contin18
EIA-481
EIA-541.
EIA-481.
AN-994
C-150
EIA-541
IRFR120
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420 Diode
Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGPS40B120UDP
Super-247
Super-247TM
PS37N50A
IRFPS37N50A
420 Diode
719C
IRGPS40B120UDP
IRFPS37N50A
1000V 20A transistor
UJ3000
igbt 1200V 60A
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IGBT 60A 1200V
Abstract: IGBT 1200V 60A IRGB5B120KDPBF TO-220aB rr
Text: PD - 95617 IRGB5B120KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGB5B120KDPbF
O-220
O-220AB
O-220AB.
O-220AB
IGBT 60A 1200V
IGBT 1200V 60A
IRGB5B120KDPBF
TO-220aB rr
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TRANSISTOR BIPOLAR 400V 20A
Abstract: C-150 IRFI840G IRGIB10B60KD1
Text: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94576A
IRGIB10B60KD1
O-220
IRFI840G
O-220
TRANSISTOR BIPOLAR 400V 20A
C-150
IRFI840G
IRGIB10B60KD1
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C-150
Abstract: IRGIB10B60KD1P
Text: PD - 94913 IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGIB10B60KD1P
O-220
O-220
C-150
IRGIB10B60KD1P
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C-150
Abstract: No abstract text available
Text: PD-95321 IRGIB6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-95321
IRGIB6B60KDPbF
O-220
O-220
C-150
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IRGB5B120KDPBF
Abstract: No abstract text available
Text: PD - 95617 IRGB5B120KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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IRGB5B120KDPbF
O-220
O-220AB
O-220AB
IRGB5B120KDPBF
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transistor irf 645
Abstract: diode 400v 2A ultrafast AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 all transistor IRF 310 RG3250
Text: PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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4601A
IRGR3B60KD2
EIA-481
EIA-541.
EIA-481.
transistor irf 645
diode 400v 2A ultrafast
AN-994
C-150
IRFR120
IRFU120
IRGR3B60KD2
R120
all transistor IRF 310
RG3250
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C-150
Abstract: IRGIB6B60KD ANSI PD-94427D
Text: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.
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PD-94427D
IRGIB6B60KD
O-220
O-220
C-150
IRGIB6B60KD
ANSI
PD-94427D
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CA3019
Abstract: ICAN 5299 diode ring mixer CA3039 MONOLITHIC DIODE ARRAYS diode gate
Text: Diode Arrays Diode “Quad” and 2 Individual Diodes CA3019 Applications and Features Analog Switch Balanced Modulator Diode Gate for Chopper Modulators Mixer Modulator Telemetry, Data Processing, Instrumentation, and Communications Equipment Excellent diode match
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CA3019
92CS-14254
10-Lead
92CS-15262
12-Lead
CA3039
CA3019
ICAN 5299
diode ring mixer
CA3039
MONOLITHIC DIODE ARRAYS
diode gate
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LB1105M
Abstract: b073 LBX105M
Text: Ordering number: EN 3263 Monolithic Digital 1C LB1105M 6-Channel X 4-Unit Diode Array The LB1105M is a diode array IC that integrates 4 units of 6-channel diode array with anode-common configuration. It is especially suited for keyboard-use diode matrix, OR gate applications. Replacement of
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LB1105M
LBX105M
LB1105M
b073
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 3263 LB1105M No.3263 Monolithic Digital IC 6-Channel X 4-Unit Diode Array The LB1105M is a diode array IC th a t integrates 4 units of 6-channel diode array with anode-common configuration. It is especially suited for keyboard-use diode m atrix, OR gate applications. Replacement of
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LB1105M
LB1105M
1260TA
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